Zirconium silicon oxide thin film with high dielectric coefficient, and preparation and use thereof

Abstract

The invention discloses a novel memorization material produced on the basis of nanocrystalline high-dielectric coefficient (ZrO2)x(SiO2)1-x films, wherein, 0.2<=x<=0.9, and the materials can be used to prepare non-volatile memorization device and integrated circuits for information storage or other functions.The high-dielectric coefficient (ZrO2)x(SiO2)1-x films has the following characteristics that: when x is smaller, the films can remain amorphous after a high-temperature quick thermal annealing process; when x is bigger, ZrO2 nanocrystalline is partly crystallized and precipitated after the high-temperature quick thermal annealing process, simultaneously the film is a insulator with a high-dielectric coefficient and a large-forbidden band width, after substituting SiO2 by ZrO2, the size of devices is reduced and excellent insulativity is remained, therefore, a non-volatile memorization device with small size, high-density and stable performance can be prepared by using the films.The present invention provides method for preparing high-dielectric coefficient (ZrO2)x(SiO2)1-x films and the method comprises sintering ZrO2 and SiO2 with an appropriate proportion to produce ceramic target materials and preparing high-dielectric coefficient zirconium silica films by using a laser burst deposition method.

Description

technical field

[0001] The invention belongs to the field of microelectronic materials, in particular to a (ZrO 2 ) x (SiO 2 ) 1-x Thin films and methods for their preparation. Background technique

[0002] Memory systems currently used by computers include volatile memory and nonvolatile memory. The former is mostly used in the internal memory of the computer system, and cannot save data when there is no power support. The latter can completely save the original data when there is no power support, so it is widely used in data storage of electronic systems, such as computers, digital equipment, industrial control equipment, etc. Currently used non-volatile memory magnetic media storage cannot achieve fast reading and writing because the magnetic head and the recording medium need to move mechanically during the reading and writing process. Electronic storage technologies such as Flash do not require mechanical components, but due to the use of thicker tunneling layers...

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