203 results about "Pulsed laser deposition" patented technology

The invention relates to the field of metal surface treatment, and discloses a multi-layer vacuum coating method for enhancing the surface of a high-precision metal part, which comprises the following steps: S1, surface treatment: removing surface pollutants and oxide layers through plasma cleaning, and coarsening the surface of a base material through laser etching; s2, coating deposition is conducted, specifically, a metal transition layer and a multi-layer nano hard coating are deposited in an enhanced mode through plasma; s3, depositing a self-lubricating coating: depositing the self-lubricating coating by pulse laser; s4, post-treatment: carrying out ion beam assisted post-treatment; s5, heat treatment: performing low-temperature heat treatment to eliminate stress. Through the plasma enhanced PVD and pulse laser deposition technology, the multi-layer nano coating is deposited under the low-temperature condition, the problem of thermal deformation of a heat-sensitive metal base material caused by a traditional high-temperature process is solved, and it is ensured that the multi-layer coating with high hardness and high compactness can still be formed on the premise that the size precision of the base material is not affected; and therefore, the method can be widely applied to surface treatment of high-precision parts.

The invention relates to a laser processing method for a coated armor structure of wear-resistant super-hydrophobic aluminum bronze, which comprises the following steps of: preparing an aluminum bronze workpiece, polishing and cleaning, depositing a ceramic wear-resistant film on the surface of the workpiece by adopting pulse laser, and etching the ceramic wear-resistant film by adopting femtosecond laser, so as to obtain a coated armor structure of the wear-resistant super-hydrophobic aluminum bronze. And then chemical modification of the wear-resistant armor structure is completed through heat treatment, chemical modification of the micro-nano surface structure is completed, and the wear-resistant super-hydrophobic aluminum bronze is obtained. The wear-resistant ceramic film and the wear-resistant armor structure can resist wear together, double guarantee is provided for the internal hydrophobic microstructure, the super-hydrophobic wear resistance of the surface of a component in underwater equipment can be improved, the service life of the component can be prolonged, and the problem of marine organism corrosion is solved.

The invention provides a pulse laser deposition process online monitoring device and method, and relates to the technical field of material preparation and process monitoring, the pulse laser deposition process online monitoring device comprises a growth cavity, a substrate supporting mechanism and a target material supporting mechanism which are arranged in the growth cavity, a pulse laser for ablating a target material, and a spectrum acquisition unit, the optical signal acquisition module is used for acquiring an optical signal radiated by plasma plume generated by ablating a target material by the pulse laser; and the spectrum analysis unit is connected with the spectrum acquisition unit and is used for receiving the light signals acquired by the spectrum acquisition unit and analyzing and processing the light signals so as to obtain the state information of the plasma plume. According to the online monitoring scheme, the extreme ultraviolet spectrum diagnosis technology and the pulse laser deposition process are deeply fused, so that the film growth process is accurately controlled, and the process is optimized.

The invention provides a magnetic focusing transmission-type pulse laser deposition method and device, and the method comprises the following steps: obtaining a corresponding relation between a laser-induced plasma plume sputtering process and a magnetic field property; designing a magnetic lens according to the corresponding relation; a transparent deposition substrate and a target material are fixed in the magnetic lens, the transparent deposition substrate is arranged right above the target material in parallel, a certain distance is formed between the transparent deposition substrate and the target material, and the deposition device is arranged in the atmospheric environment; the electromagnetic lens applies a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate; pulse laser vertically enters along the central axis of the magnetic lens and penetrates through the transparent deposition substrate to vertically bombard the target material to induce generation of plasma plume; and under the action of a magnetic field of the electromagnetic lens, the plasma plume is focused in the sputtering process and then upwards deposited on the transparent deposition substrate, and a two-dimensional patterned material structure is obtained through laser scanning. The problems that in an existing pulse laser deposition technology, the material deposition area is large and uncontrollable, and a two-dimensional patterned structure is difficult to achieve are solved.

The invention relates to the technical field of water electrolysis devices, bipolar plates and coating materials, in particular to a metallic compound coating, a preparation method thereof and a modified bipolar plate. The metal compound coating is used for covering the surface of the bipolar plate of the water electrolysis device, and the preparation method of the metal compound coating comprises the following steps: by taking the bipolar plate of the water electrolysis device as a substrate, depositing a titanium nitride coating on the surface of the substrate by adopting a pulse laser deposition process; and then oxygen permeation is conducted on the titanium nitride coating through a plasma surface oxygen permeation technology, and the titanium oxynitride coating with the oxygen content changing in a gradient mode is formed. According to the invention, a layer of titanium oxynitride coating with gradient change of oxygen content is generated on the surface of the titanium bipolar plate by mainly adopting a pulse laser deposition technology and a plasma oxygen permeation technology, and the titanium oxynitride coating has corrosion resistance and conductivity; the problems that according to an existing composite coating preparation method, due to interface defects and stress concentration between different coatings, the protective performance of the coatings is reduced, and the long-term stability of the coatings is affected are solved.

The invention relates to a femtosecond laser processing method for a periodic ferrocobalt oxide single crystal stripe nanostructure, which comprises the following steps of: firstly, preparing a strontium titanate single crystal substrate, and depositing a single crystal epitaxial ferrocobalt oxide film (CFO) on the substrate through pulsed laser; and the included angle between the polarization direction of the femtosecond laser and the lattice orientation of the film is adjusted according to a preset crystallographic direction, so that the surface of the film is induced by the femtosecond laser to form a stripe-shaped periodic surface structure. The single crystal epitaxial cobalt ferrite film prepared by the method has a highly ordered nano structure, and the specific surface area and surface active sites of the material are remarkably improved, so that the application performance of the material in the fields of gas sensing and the like is enhanced.

The present invention discloses a flexible sensor based on an oxide wrinkle structure and a preparation method thereof, comprising: using a solid-phase method to prepare a Sr3Al2O6 target material and a La-BaTiO3 target material respectively; using a pulsed laser deposition technique to prepare a "La-BaTiO3 / Sr3Al2O6 / SrTiO3" heterostructure using the Sr3Al2O6 target material and the BaTiO3 target material on a SrTiO3 single crystal substrate; using a water-soluble method to electrostatically adsorb a polydimethylsiloxane (PDMS) film on the "La-BaTiO3 / Sr3Al2O6 / SrTiO3" heterostructure. The La-BaTiO3 film was then peeled off from the structure to create a "La-BaTiO3 / PDMS" heterostructure. A gold (Au) electrode was grown on the "La-BaTiO3 / PDMS" heterostructure using magnetron sputtering to create an "Au / PDMS / La-BaTiO3" heterostructure. Another PDMS film was attached to the Au electrode surface of the "Au / PDMS / La-BaTiO3" heterostructure by electrostatic adsorption for encapsulation, resulting in a piezoresistive sensor with the "PDMS / Au / La-BaTiO3 / PDMS" heterostructure. This preparation method offers high process controllability, and the resulting flexible piezoresistive sensor exhibits high precision, high sensitivity, and high reliability. The flexible piezoresistive sensor can adapt to changes in various surfaces and shapes and has a wide range of applications.

The invention provides a YBCO (Yttrium Barium Copper Oxide) film for a single-photon detector and a deposition method thereof, and the deposition method comprises the following steps: S1, fixing a substrate on a substrate table of pulse laser deposition equipment, vacuumizing, and heating the substrate table to a deposition temperature; s2, oxygen is introduced into the deposition cavity until the oxygen pressure ranges from 0.25 Torr to 0.35 Torr; s3, adopting a YBCO target material, and carrying out pre-sputtering in a baffle closing state; s4, a baffle is opened, sputtering is conducted on the YBCO target material, and a YBCO film precursor is obtained; s5, oxygen is introduced into the deposition cavity, and meanwhile, the annealing temperature is reduced for in-situ annealing treatment; and S6, cooling to room temperature to obtain the YBCO film. According to the method, the high-quality ultrathin YBCO film with the thickness as low as 14 nm is prepared by accurately controlling the deposition parameters and the annealing process of the oxygen atmosphere, the prepared YBCO film still keeps excellent superconducting performance under the ultrathin condition, and the refrigeration cost is greatly reduced.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

The invention belongs to the technical field of condensed physics and material science, and particularly relates to an ultrathin single crystal ferroelectric PZT film and a preparation method thereof. The method comprises the following steps of: bombarding a PZT target material by using pulse laser to grow a single crystal ferroelectric PZT film on a single crystal substrate by using a pulse laser deposition PLD method; the deposition process comprises two stages: a single crystal layer growth stage and a rapid cooling stage; the method is simple and easy to operate, and the growth of the ultrathin ferroelectric single crystal film is realized by controlling the laser energy, the substrate deposition growth temperature and the oxygen pressure during PLD growth. According to the method, the growth process is monitored in real time by using a high-energy electron diffractometer RHEED, the quality and thickness of a thin film crystal during growth are ensured, and the atomic-scale flatness of the surface of a prepared sample is proved by observing the surface morphology of the prepared sample through an atomic force microscope; the PZT thin film grown on the single crystal substrate still keeps ferroelectricity when only two layers of crystal lattices are thinnest, and ferroelectric polarization overturning can be achieved.

The invention relates to the technical field of thermoelectric effect and heat flux density detection, and discloses an atomic layer thermopile heat flux sensor with water cooling and preparation and assembly methods, the heat flux sensor comprises a sensor chip and a cooling assembly, the bottom layer of the sensor chip is a substrate layer with the 001 crystal face beveled by 15 degrees, and the bottom layer of the sensor chip is a substrate layer with the 001 crystal face beveled by 15 degrees. A layered heat flow sensitive film on the substrate is a YBa2Cu3O7-delta film grown through pulse laser deposition, and double-layer metal electrodes are prepared at the two ends of the surface of the YBa2Cu3O7-delta film; and the cooling assembly is used for carrying out water cooling on the sensor chip and packaging the sensor chip. According to the invention, a YBa2Cu3O7-delta thin film with a large inclination angle is prepared on a single crystal lanthanum aluminate LaAlO3 substrate which is beveled by 15 degrees; the high-temperature-resistant Ni / Pt and Ni / W double-layer electrode is prepared on the surface of the YBa2Cu3O7-delta thin film, annealing is carried out, the contact strength of the YBa2Cu3O7-delta thin film and an electrode material is improved, the contact resistance is reduced, and the electric signal strength is improved; the cooling assembly improves the stability of the device in a large-heat-flow and long-time working scene.

The invention discloses a multi-component superconducting target material, a preparation method thereof and a multi-component alternating PLD (Pulsed Laser Deposition) film deposition method. The preparation method comprises the following steps that S01, the shape structure of each component target material is designed according to the component condition of the multi-component superconducting target material, a plurality of partial target material structures are obtained, the partial target material structures are all fan-shaped structures, and all the partial target material structures are combined into a complete cylinder; s02, respectively preparing partial target material blanks according to partial target material structures designed in the step S01; s03, combining all parts of target material blanks into a cylinder, and performing high-pressure tabletting treatment to obtain a cylindrical composite target blank; and S04, carrying out plasma sintering treatment on the cylindrical composite target blank, and cooling to obtain the multi-component superconducting target material. According to the multi-component superconducting target material, the interval distribution of the doping phases in the c-axis direction is accurately regulated and controlled, and then the target material structure is matched through technological parameters, so that active control over the longitudinal interval of pinning centers is achieved.

The present invention relates to the field of intelligent sensing technology, and in particular to a method for preparing a photoelectric memristor array and an application of the photoelectric memristor array. The photoelectric memristor device array comprises a substrate layer NSTO and a top electrode layer ITO from bottom to top; the substrate layer is an NSTO oxide semiconductor, a laser direct writing technology is used to define the pattern of the memristor device on the substrate layer, and then a pulsed laser deposition technology PLD is used to deposit transparent indium tin oxide ITO thereon, and the photoelectric memristor device array achieves low latency, low energy efficiency and high working efficiency.

The invention discloses a preparation method of a complex oxide interface one-dimensional system. According to the method, a pulse laser deposition technology is utilized, based on a step structure of a substrate, a novel one-dimensional nano material of a complex oxide is prepared through a growth mode of flowing along a step, and the method comprises the steps that a material S is epitaxially grown on the substrate, the thickness of the material S is one step height, and the transverse width of the material S is L1; a material B is laterally and epitaxially grown on the substrate or the material S along the edge of the new step, the lateral width is L2, and the thickness is the height of one step; taking L1 + L2 as a period, and repeatedly growing for n periods; the steps are repeated, N repetitions are achieved in the longitudinal direction, and then preparation of the complex oxide novel interface one-dimensional system is achieved. The method disclosed by the invention develops a new material interface regulation and control way, can be popularized to other associated systems, and lays a physical foundation for research and development of all-oxide spinning electronic devices.

The utility model relates to pulse laser deposition equipment which comprises a light source, a scanning assembly and a deposition assembly, the light source is used for emitting pulse laser, the scanning assembly is arranged on the side, in the first direction, of the light source, and the scanning assembly comprises a first fixed mirror and a second fixed mirror which are sequentially arranged in the propagation direction of the pulse laser; and the pulse laser sequentially passes through the first fixed mirror and the second fixed mirror, is propagated along a second direction and is incident to the deposition assembly. The scanning assembly is arranged to be capable of moving relative to the light source in the first direction so that the pulse laser passing through the scanning assembly can enter different positions of the deposition assembly, the deposition assembly comprises a target material and a substrate, and the surface, facing the substrate, of the target material is used for receiving the pulse laser. Wherein the first direction and the second direction intersect with each other. According to the method and the device, the large-area or large-size substrate can be deposited, and the film layer on the deposited substrate has better uniformity.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

The embodiment of the invention discloses a donor-receptor complementary co-doped hafnium oxide-based ferroelectric film material and a preparation method thereof. The method comprises the following steps: according to the composition of the donor-receptor complementary co-doped hafnium oxide-based ceramic target material, mixing raw material powder to obtain mixed raw material powder; calcining the mixed raw material powder under a preset condition; pressing and molding the calcined product into a target material green body; and sintering the target material green body to obtain the donor-receptor complementary co-doped hafnium oxide-based ceramic target material. Wherein the composition of the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material is expressed as AxByHf (1-x-y) O2, A is a donor and comprises elements niobium and tan, and B is an acceptor and comprises elements yttrium and lanthanum; x is more than 0.01 and less than 0.05, and y is more than 0.01 and less than 0.05; the raw material powder containing the donor comprises niobium oxide and tantalum oxide, and the raw material powder containing the acceptor comprises yttrium oxide and lanthanum oxide; and taking the donor-acceptor complementary co-doped hafnium oxide-based ceramic target material as a sputtering target, and obtaining the donor-acceptor complementary co-doped hafnium oxide-based ferroelectric material film by using a pulse laser deposition method.

The invention provides an anti-ferroelectric-paraelectric laminated energy storage capacitor and a preparation method thereof. The preparation method at least comprises the following steps: S1, depositing a bottom electrode layer on a substrate; s2, depositing a first dielectric layer through a pulse laser deposition process, wherein the material of the first dielectric layer is a paradielectric material; s3, a second dielectric layer is deposited through the pulse laser deposition technology, the second dielectric layer at least sequentially comprises an anti-ferroelectric layer and a paraelectric layer, the anti-ferroelectric layer is made of an anti-ferroelectric material, and the paraelectric layer is made of a paraelectric material; s4, repeating the step S3 for multiple times; and S5, depositing a top electrode layer. According to the preparation method disclosed by the invention, the antiferroelectric-paraelectric laminated film is formed in a layering form, and a structure in which the antiferroelectric dielectric layer and the paraelectric dielectric layer are circularly and alternately deposited and molded is constructed, so that the direct interface flatness between the antiferroelectric layer and the paraelectric dielectric layer is solved, the performance of a non-polar / reversed-polarity interface region between the layers is improved, and defects are reduced; the energy storage density of the energy storage capacitor is increased, and the efficiency is improved.

The invention belongs to the field of film sensors, and discloses a preparation method of a lanthanum aluminate / strontium titanate nanostructure for hydrogen detection, which comprises the following steps: preparing a strontium titanate single crystal substrate, depositing a single crystal epitaxial lanthanum aluminate film on the strontium titanate single crystal substrate by pulse laser to obtain a single crystal epitaxial lanthanum aluminate / strontium titanate material; then, a stripe-shaped periodic surface nanostructure is formed on the surface of the single crystal epitaxial lanthanum aluminate thin film through femtosecond laser induction, a lanthanum aluminate / strontium titanate nanostructure is obtained, and then precious metal nanoparticles are deposited on the surface of the lanthanum aluminate / strontium titanate nanostructure. According to the preparation method, the highly-ordered single-crystal lanthanum aluminate / strontium titanate heterogeneous film is obtained by accurately controlling pulse laser deposition process parameters, and a nano stripe periodic structure is prepared on the surface of lanthanum aluminate by accurately controlling pulse femtosecond laser processing parameters, so that the specific surface area is effectively increased, gas adsorption sites are increased, and the specific surface area of the lanthanum aluminate / strontium titanate heterogeneous film is increased. And the gas charge transmission capability of the lanthanum aluminate / strontium titanate interface two-dimensional electron gas is improved.

The application provides a ferroelectric metal and a preparation method and application thereof. The ferroelectric metal of the application is composed of cubic silicon carbide crystals and doping elements doped therein, wherein the concentration of the doping elements is greater than or equal to 1*10 18 cm ‑3 The material of the application can be prepared by a chemical vapor deposition method, a high-temperature solution growth method, a solid-phase sintering method, a pulse laser deposition method and the like. Since the conductivity of metal, the switching characteristics of ferroelectric and the force-electric coupling characteristics of piezoelectric are integrated, the ferroelectric metal of the application has great application value in the fields of high-performance transducers, high-sensitivity sensors, low-power micro-electro-mechanical system (MEMS), next-generation multifunctional electronic devices and the like.

The application discloses a method for preparing large-size rare earth barium copper oxygen superconducting target material and relates to the technical field of superconducting target material preparation. The method realizes the compatibility of a single set of molds with various specifications of target materials by optimizing the design of cold isostatic pressing molds, adopting a composite mold structure comprising upper and lower cover plates, a cylinder, isolation pads, a replaceable elastic lining and a clamp, and can press multiple target materials at a time by setting multiple isolation pads, and is suitable for the preparation of target materials with a diameter of 8-12 inches and a thickness of 10-20 mm. The preparation process comprises the following steps of mold assembly, superconducting powder filling and vibration treatment, segmented pressure cold isostatic pressing treatment, blank shaping, oxygen atmosphere sintering and grinding machine processing. The mold generality design and batch pressing technology of the application significantly improve the production efficiency, reduce the mold cost and powder loss, and at the same time, ensure the density (relative density 80%-85%) and surface flatness (less than or equal to 0.5 mm) of the target material, and meet the strict requirements of large-size target materials for high-end superconducting thin film preparation such as pulsed laser deposition.

The application discloses a low-onset-voltage gallium oxide power diode, and mainly solves the problems of high-onset-voltage and low-breakdown-voltage of the existing gallium oxide power diode. The gallium oxide power diode comprises a cathode (4), a substrate (1), a beta-Ga2O3 drift layer (2) and an anode (5) from bottom to top, and is characterized in that: a ferroelectric material PZT dielectric layer (3) formed by an outer circular ring and an inner circular ring is arranged between the beta-Ga2O3 drift layer and the anode, so that when a positive voltage is applied above the PZT, positive charges are generated at the anode interface, electrons are attracted and accumulated to reduce the onset voltage; when a negative voltage is applied above the PZT, negative charges are generated at the anode interface to form a high-resistance area, and the breakdown voltage of the device is improved. The ferroelectric material PZT dielectric layer (3) is a ferroelectric material PZT field ring formed by pulse laser deposition, photolithography and dry etching. The application can effectively reduce the onset voltage of the device, improve the breakdown voltage of the device, and can be used for rectifiers and direct current converters of power electronic systems.

The application discloses a scanning target holder device and a pulsed laser deposition device. The scanning target holder device comprises a first transmission unit, a first main body and a hollow mounting cylinder, the first main body is mounted to the outside of a coating chamber, and the mounting cylinder is rotatable relative to the first main body; a second transmission unit is mounted to the mounting cylinder, the second transmission unit comprises a second main body and a mounting shaft, the mounting shaft is rotatable relative to the second main body, the mounting shaft is provided with an input part and an output part, the input part is located at the outside of the mounting cylinder, and the output part is located at the inside of the mounting cylinder; a support is used for supporting a target material, is mounted to the output part and is arranged in the coating chamber; a first driving part drives the second transmission unit to rotate so that the support revolves; and a second driving part is connected with the input part and drives the mounting shaft to rotate so that the support mounted on the output part of the mounting shaft rotates. The scanning target holder device can improve the stability of the device.

The invention discloses a high-yield and high-purity Cs2AgBiBr6 polycrystalline powder room temperature preparation method, which comprises: mixing CsBr powder, AgBr powder and BiBr3 powder, adding DMSO and an anti-solvent, carrying out a room temperature stirring reaction, and after the reaction is finished, carrying out cleaning purification and heating drying on the reaction product to obtain the Cs2AgBiBr6 polycrystalline powder. The Cs2AgBiBr6 polycrystalline powder with the purity close to 100% and the yield reaching 92% is prepared through a simple process under the room temperature condition, a source material is provided for thermal evaporation, sputtering and pulsed laser deposition of a high-quality Cs2AgBiBr6 film, and application of Cs2AgBiBr6 in the aspects of solar cells, photoelectric detection, laser diodes and the like is further promoted.

The present invention discloses a gas sensor based on a confined CeO2 nanoparticle thin film, its preparation method and application. The gas sensor based on the confined CeO2 nanoparticle thin film includes a substrate, and a confined CeO2 / carbon thin film layer is on the surface of the substrate. The particle size of the confined CeO2 is 5-20 nm, and it is confined and grown in an amorphous carbon matrix, having a high degree of dispersion. The preparation method of the nanoparticle thin film is simple and rapid, and the whole preparation process only takes dozens of minutes. That is, first, a CeO2 / carbon thin film is obtained by pulsed laser deposition technology, and then a confined CeO2 nanoparticle thin film is obtained by combining rapid annealing treatment. The confined CeO2 nanoparticle thin film is in-situ grown on the surface of a commercial flat Al2O3 gas-sensitive substrate and can directly be used as the sensitive layer of a resistive semiconductor gas sensor. The sensor can effectively detect the volatile organic compound (VOC) triethylamine and exhibits remarkable response, excellent stability and selectivity.

The invention discloses a substrate resistance heating device and a pulse laser deposition system, the substrate resistance heating device comprises a base, the base is provided with a mounting position with an opening in the front side, the left side and the right side of the mounting position are respectively provided with a conductive part, and the conductive parts are connected with copper wires; the resistance heating structure comprises a mounting part and a substrate, the mounting part is inserted into the mounting position, the mounting part can move front and back and can be taken out from the front side of the mounting position, the substrate is arranged on the mounting part and is made of a conductive material, and when the mounting part is inserted into the mounting position, a conductive path is formed between the substrate and the conductive parts on the left side and the right side. The device is simple in structure, low in cost, low in energy loss, high in heating speed and convenient to install and operate.

The invention relates to a monoclinic crystal (310) crystal face gallium oxide single crystal film and a preparation method thereof, a Ga2O3 single crystal film is an epitaxial single crystal film with a monoclinic structure, and the growth crystal face is Ga2O3 (310). The selected substrate is a sapphire substrate, a hexagonal gallium nitride substrate, a hexagonal silicon carbide substrate and the like which are high in heat conductivity and low in cost and are of a trigonal structure. The out-of-plane epitaxial relationship and the in-plane epitaxial relationship between the thin film and the substrate are AND respectively. The pulse laser deposition adopts a crystal solid-state laser, the laser wavelength is 266nm, and the growth temperature is lower than 600 DEG C. A transmission spectrum of the Ga2O3 single crystal film in a visible region shows that the transmittance in a range of 300-700nm is about 80%, the optical band gap of the film is about 4.6 eV, the surface square root roughness is less than 0.5 nm, and the Ga2O3 single crystal film is an excellent gallium oxide semiconductor candidate material crystal face.

The invention relates to the technical field of material performance testing, in particular to a novel ultrafast IV ferroelectric material testing method, and provides the following scheme aiming at the problems that in the prior art, a ferroelectric material IV testing method is low in speed, low in time resolution, low in precision and incapable of accurately reflecting the electrical performance of a ferroelectric material under ultrafast voltage excitation. A hardware-level synchronous test system composed of a waveform generator / fast measurement unit (WGFMU) and a dual remote induction and switch unit (RSU) is constructed, a ferroelectric sample is prepared in combination with pulsed laser deposition (PLD) in a standardized mode, then a special voltage waveform signal is edited, and accurate test of the current-voltage characteristics of the ferroelectric material under the nanosecond time scale is achieved. According to the method, the defects of an existing IV test method in the aspects of test speed, time resolution and test precision are overcome, and the electrical performance of the ferroelectric material under high-frequency and rapid change working conditions can be reflected more truly.

The present invention relates to a method for preparing a dual-wavelength laser-induced periodic cerium oxide surface nanostructure, which includes the process of pulsed laser depositing a cerium oxide thin film on a niobium-doped strontium titanate substrate; the process of introducing an ultraviolet-wavelength laser to irradiate and anneal the cerium oxide thin film to obtain a dense cerium oxide thin film; and the process of introducing an infrared-wavelength laser to induce the formation of periodic nanostructures on the surface of the dense cerium oxide thin film. The present invention has the advantage of improving the uniformity of the periodic nanostructures on the cerium oxide surface.

There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material is set to 650° C. to 1,000° C., and the laser intensity is set to 1.0 J / cm2 to 10.0 J / cm2. The bismuth-containing gallium oxide-based semiconductor film of the present disclosure has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to the total of the numbers of atoms of bismuth and gallium and has a β-gallia structure. The bismuth-containing gallium oxide-based semiconductor component of the present disclosure has a base material and the bismuth-containing gallium oxide-based semiconductor film that is laminated on the base material.