865 results about "Pulsed laser deposition" patented technology

Powerful nanosecond-range lasers using low repetition rate pulsed laser deposition produce numerous macroscopic size particles and droplets, which embed in thin film coatings. This problem has been addressed by lowering the pulse energy, keeping the laser intensity optional for evaporation, so that significant numbers of the macroscopic particles and droplets are no longer present in the evaporated plume. The result is deposition of evaporated plume on a substrate to form thin film of very high surface quality. Preferably, the laser pulses have a repetition rate to produce a continuous flow of evaporated material at the substrate. Pulse-range is typically picosecond and femtosecond and repetition rate kilohertz to hundreds of megahertz. The process may be carried out in the presence of a buffer gas, which may be inert or reactive, and the increased vapour density and therefore the collision frequency between evaporated atoms leads to the formation of nanostructured materials of increasing interest, because of their peculiar structural, electronic and mechanical properties. One of these is carbon nanotubes, which is a new form of carbon belonging to the fullerene (C60) family. Carbon nanotubes are seamless, single or multishell co-axial cylindrical tubules with or without dome caps at the extremities. Typically diameters range from 1 nm to 50 nm with a length >1 mum. The electronic structure may be either metallic or semiconducting without any change in the chemical bonding or adding of dopant. In addition, the materials have application to a wide range of established thin film applications.

The present invention relates to an apparatus and method for forming a high-temperature superconducting film on a long tape substrate at speeds suitable for large-scale production. The method includes a spooling system for use in a high-throughput, continuous pulsed laser deposition (PLD) process in which a superconducting layer, such as yttrium-barium-copper-oxide (YBCO), is deposited atop a buffered metal substrate tape that is translated through one or more deposition chambers via the action of a reel-to-reel spooling system and a conductive-radiant multi-zone substrate heater. It also optionally includes a multi-target manipulator apparatus and multiple laser beams in which multiple targets are impinged upon simultaneously.

A composite layer of a sorbent, chemoselective, non-electrically-conducting polymer and nano-particles of an electrically conducting material dispersed throughout the polymer is formed on a substrate by pulsed laser deposition, matrix assisted pulsed laser evaporation or matrix assisted pulsed laser evaporation direct writing.

A method and system for fabricating a layer of an organic light emitting device using pulsed laser deposition is provided. A pulsed laser source is used in the method for depositing an organic or coordination complex solid sample on a substrate. A plurality of coherent light wavelengths tuned at different frequencies from the laser and directed through an optical inlet of a vacuum chamber strike a sample to form a volatized sample for depositing on a substrate. Pulsed laser sources used in the method and system include YAG, excimer, alexandrite or combinations thereof. The system includes a pulsed laser source, a vacuum chamber, and an optical inlet for receiving at least two coherent light wavelengths tuned at different frequencies from a pulsed laser source. Alternative methods of deposition may also be performed within the same vacuum chamber.

A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as synthesis of undoped and/or doped metal-based oxide alloy thin films.

The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.

The invention discloses a one-phase ferroelectric film capable of regulating effective resistance by ferroelectric polarization, a preparing method of the one-phase ferroelectric film and an effective resistance regulation mode. The one-phase ferroelectric film comprises B-bit-doped Bal-xSrxTil-yByO3, Pb(Fe1-yBy)O3, Pb(Co1-yBy)O3, (Pb1-xAx)(ZryTi1-y)O3, A-bit-doped Y1-xAxMnO3, Bil-xAxFeO3, and Bi4-xAxTi3O12. The one-phase ferroelectric film is prepared by using film preparing methods, such as pulsed laser deposition (PLD), laser molecular beam epitaxy (LMBE) and magnetron sputtering. The prepared ferroelectric film is 0.4-1000 nanometer in the thickness and has larger conductance and leakage current, as well as ferroelectricity and semiconductor performance. The invention provides a method for improving the antifatigue performance of the one-phase ferroelectric film. Turning frequency (x) of the ferroelectric polarization in the method can be increased to 102-1010; and the ferroelectric polarization is turned to regulate the effective resistance of the one-phase ferroelectric film.

An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.

System and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.

Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO₂ powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO₂, using targets made of the CuBO₂ powders. The CuBO₂ thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO₂ thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO₂ as a channel layer and thin film solar cells with CuBO₂ p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO₂ in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

The invention relates to a resistive random access memory based on bismuth iron thin film system and manufacturing method thereof. The memory comprises an insulating substrate (101) layer as the first layer, a lower electrode (102) as the second layer, a bismuth iron thin film (103) as the third layer, an upper electrode (104) as the fourth layer; the manufacturing method utilizes the method thermal evaporation or magnetron sputtering to grow the lower electrode on the insulating substrate layer, utilizes the method of magnetron sputtering, pulsed laser deposition or colloidal sol-gel to grow the bismuth iron thin film on the lower electrode, finally utilizes the method of thermal evaporation or magnetron sputtering to grow the upper electrode on the bismuth iron thin film, and utilizes the method of ultraviolet lithography, electron beam or ion beam etching to obtain the electrode pattern. The memory provided by the invention has excellent electroluminescent resistance effect and good stability, and has simple manufacturing method, low cost and is easy for manufacturing in large scale and commercial process.

The invention discloses an LED epitaxial wafer grown on an Si substrate and a preparation method thereof. The LED epitaxial wafer grown on the Si substrate is prepared through the following preparation method: using the Si substrate, enabling the surface (111) of the Si substrate to deviate from (100) by 0.5 to 1 degree, growing a first AlN buffer layer, and growing a second AlN buffer layer, an AlGaN step buffer layer, a u-GaN layer, an n-GaN layer, an InGaN/GaN quantum well layer and a p-GaN layer in sequence. The LED epitaxial wafer grown on the Si substrate uses Si as the substrate, the preparation method combines a metal organic chemical vapor deposition technique and a pulsed laser deposition technique, a procedure of pre-paving Al for using the metal organic chemical vapor deposition technique to grow the AlN is omitted, the problem that Si is diffused to the AlN buffer layer under a high temperature to damage the surface shape is avoided, and the LED epitaxial wafer is good in performance, high in crystal quality and suitable for LED devices.

A pulsed laser deposition (PLD) process is used for forming a functional metal, ceramic, or ceramic/metal layer on an inner wall of a hollow body. Simultaneously with the deposition process, a thin-film laser treatment is carried out, whereby a laser beam impinges on the coating layer as it is being formed to achieve a rapid heating followed by a rapid cooling and solidification of the deposited coating layer. In this context, the energy and material flux densities are prescribed and controlled as a function of the spacing of the condensation region from the substrate surface. Laser pulses having an energy of 1 to 2 Joules and a pulse repetition rate of 10 to 50 Hz are used. The pulse duration as well as the residual gas atmosphere in the vacuum deposition chamber are controlled so that the generated plasma flux forms the desired layered grain structure, namely a glassy amorphous structure, a columnar structure, or a polycrystalline structure. The coating or target material can be made of a conducting material and/or an insulating material. By continuously or discretely varying process parameters, it is possible to form graded layer coating systems having properties that vary through the thickness of the coating.

The invention belongs to the technical field of the information memory and particularly relates to a ferroelectric oxide/semiconductor sequentially composite film diode resistance change memory. The resistance change memory comprises a substrate, a bottom electrode, a ferroelectric oxide/semiconductor composite memory function layer and a top electrode, and is prepared by the following method which comprises the following steps: developing compound electrodes, such as strontium ruthenium, lanthanum nickel and the like, or metal on the monocrystal strontium titanate or SiO2/Si substrate to serve as the bottom electrode; then developing the ferroelectric oxide/semiconductor composite film function layer by a pulsed laser deposition or radio frequency magnetron sputtering method; and developing the metal top electrode to form a single diode memory unit structure. The polarity of the diode changes with the orientation of the electric domain. The ferroelectric oxide/semiconductor composite film diode resistance change memory has the advantages of high memory density, good information retentivity and low power consumption.

Performance and reliability of microelectromechanical system (MEMS) components enhanced dramatically through the incorporation of protective thin film coatings. Current-generation MEMS devices prepared by the LIGA technique employ transition metals such as Ni, Cu, Fe, or alloys thereof, and hence lack stability in oxidizing, corrosive, and/or high temperature environments. Fabrication of a superhard, self-lubricating coating based on a ternary boride compound AlMgB₁₄ is described in this letter as a potential breakthrough in protective coating technology for LIGA microdevices. Nanoindentation tests show that hardness of AlMgB₁₄ films prepared by pulsed laser deposition ranges from 45 GPa to 51 GPa, when deposited at room temperature and 573 K, respectively. Extremely low friction coefficients of 0.04-0.05, which are thought to result from a self-lubricating effect, have also been confirmed by nanoscratch tests on the AlMgB₁₄ films. Transmission electron microscopy studies show that the as-deposited films are amorphous, regardless of substrate temperature; however, analysis of FTIR spectra suggests that the higher substrate temperature facilitates formation of the B₁₂ icosahedral framework, therefore leading to the higher hardness.

The invention relates to the deposition of transparent conducting thin films, such as transparent conducting oxides (TCO) such as tin doped indium oxide (ITO) and aluminum doped zinc oxide (AZO) on flexible substrates by pulsed laser deposition. The coated substrates are used to construct low cost, lightweight, flexible displays based on organic light emitting diodes (OLEDs).

Nanometer-sized non-superconducting particulates in superconductive REBCO films, where RE is a rare earth metal, for flux pinning enhancement and a method of forming are disclosed. A target with a second phase material sector portion and a superconductive material portion is used in a pulse laser deposition process to form films on substrates according to the present invention. The films consist of 10-20 nm-sized precipitates. In a 0.5 μm thick film, a transport critical current density (J_c)>3 MA/cm² at 77K in self-field was measured. In one embodiment, magnetization J_c at 77 K and 65K showed significant improvements in a composite YBCO films with fine precipitates produced according to the present invention as compared to non-doped (standard) YBCO films (>10 times increase at 9 T, 65 K).

The invention relates to a ferroelectric metal hetero-junction based memristor; wherein the memristor material-ferroelectric lithium niobate is prepared by a pulse laser deposition system; monocrystal LN target material (4) is fixed on a target platform (5) of the pulse laser deposition system, and is placed in a growth chamber (6) of a pulse laser deposition film-making system; the vacuum in the growth chamber is pumped to be below 0.8*10-4Pa, oxygen gas flows in, and the oxygen pressure is from 25 to 35Pa, the substrate temperature is heated from 600-650 DEG; a KrF excimer laser is started, and the deposition time is determined according to monopulse energy; in-situ 500-650 DEG annealing is carried out 20-90min; the film has spontaneous polarization and 180-degree domain boundary; the memristor ferroelectric lithium niobate film is clamped between two metal electrode films to form a memristor unit with a miniature sandwich structure; the device can be applied to a high-density low-energy-consumption nonvolatile resistance random access memory.

A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlO_xN_y or Me_zAlO_xN_y where Me_z symbolizes Ti_z, Si_z or Cr_z and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

The invention relates to a Zr-Co-Re thin film getter provided with a protection layer, and a preparation method thereof. The Zr-Co-Re thin film getter is composed of a getter layer and the protection layer; main components of the getter layer are Zr, Co, and one or more selected form rare earth elements La, Ce, Pr, and Nd; and main component of the protection layer is Ni. Pulsed laser deposition film plating is adopted, and deposition of the double-layer structured thin film getter containing the protection layer and the getter layer on texture monocrystalline silicon is carried out. The texture substrate is capable of increasing effective area of the getter thin film, and so that inspiratory flow rate and inspiratory capacity are increased. The surface of the getter layer is plated with a Ni protection layer; Ni is capable of realizing dissociation of hydrogen, and increasing absorption amount of hydrogen; and the Ni protection layer is capable of inhibiting absorption of oxygen and reducing activation temperature. Activation of the Zr-Co-Re thin film getter can be realized in roasting processes at a temperature of 180 to 350 DEG C; after roasting, the Zr-Co-Re thin film getter possesses excellent inspiration performance at room temperature, can be used for internal gas residue removing of high vacuum microelectronic devices.

The invention discloses a preparation method for a copper zinc tin sulfide thin film material. The preparation method comprises the following steps of: performing oil removal, electrochemical polishing and activation pretreatment on the surface of a copper foil substrate; depositing metallic zinc and tin by using one of a magnetron sputtering method, an evaporation method, a pulsed laser deposition method and an electrodeposition method to form a metallic preformed layer; annealing the metallic preformed layer in a sulfur-containing protective atmosphere at high temperature; and placing the annealed metallic preformed layer in an alkaline KCN solution for etching. By the preparation method, a copper belt is adopted as a flexible substrate and a back contact conductive material, so that the usage of expensive metallic molybdenum is greatly reduced, and production cost is decreased; and a Cu-S phase formed by excessive copper is favorable for the growth of copper zinc tin sulfide crystal grains, reduces charge carrier recombination centers and improves photoelectric conversion efficiency. The copper zinc tin sulfide thin film material prepared by the method is easy to produce in large scale, and can be popularized and applied in a thin film solar cell industry.

The invention discloses a method for preparing film bulk acoustic wave resonator on the basis of a monocrystal AlN. The method comprises the following steps of: growing (111) an oriented monocrystal Al film on a preparation substrate by using a molecular beam epitaxial growth method; growing (002) an oriented monocrystal AlN film on the oriented monocrystal Al film by using a pulse laser deposition growth method; and depositing a layer of metallic film on the AlN film to form a Al/AlN/metal sandwich piezoelectric stack structure. The piezoelectric stack structure based on monocrystal AlN prepared by the method can be used for preparing the film bulk acoustic wave resonator. The piezoelectric performance of the monocrystal AlN film is superior to that of a polycrystal AlN piezoelectric film applied to film bulk acoustic wave resonator so that the quality factor and a valid electromechanical coupling factor of a device are increased.

The invention discloses a lithium vanadate anode material, an anode, a battery and an anode material preparation method, and belongs to the field of batteries. The lithium vanadate anode material is of a core-shell structure, the core is lithium vanadate, the shell is a coating layer, lithium vanadate is nanometer granules or micrometer level secondary granules formed by nanometer granules, the thickness of the coating layer is 2-30nm, and the coating layer comprises a conductive coating layer or/and a stable coating layer. An organic carbon source is introduced into a high temperature reactor with an inert gas as a carrier by using a chemical vapor deposition method, in order to from the conductive coating layer of amorphous carbon or graphitic carbon on the surface of the core. The conductive coating layer and the stable coating layer are prepared by using a vacuum coating method, a magnetron sputtering method, a pulsed laser deposition method or an atomic layer deposition method. Lithium vanadate is used as an active anode material to obtain high coulombic efficiency, large specific capacity and good rate capability, and the proper embedded escape potential and the considerable volume of lithium vanadate are fully utilized.