21 results about "Pulsed laser deposition" patented technology

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

This invention relates to the field of semiconductor materials, specifically to an aluminum nitride thin film with different crystal orientations, its preparation method, and its applications. The invention provides a method for preparing aluminum nitride thin films with different crystal orientations, comprising the following steps: S1, selecting a single-crystal substrate with a corresponding crystal orientation according to the crystal orientation requirements of the target aluminum nitride thin film; S2, annealing the single-crystal substrate and introducing a nitrogen ion source to activate the surface of the single-crystal substrate by ion bombardment; S3, performing pre-bombardment and thin film deposition using pulsed laser deposition, and obtaining an aluminum nitride thin film with the target crystal orientation by controlling the growth temperature and growth gas pressure. This invention provides a universal, efficient, and controllable solution by organically combining three steps: "substrate crystal orientation selection - surface activation modification - synergistic control of growth parameters," successfully achieving high-quality and controllable preparation of aluminum nitride thin films with multiple crystal orientations on a single-pulse laser deposition platform.

This invention discloses a method for preparing flexible self-supporting silver niobate thin films. The method involves first pretreating a strontium titanate substrate; then, using pulsed laser deposition, a strontium aluminate sacrificial layer and a silver niobate functional layer are sequentially sputtered onto the strontium titanate substrate to form an STO / SAO / ANO heterostructure; finally, polydimethylsiloxane is attached to the surface of the silver niobate functional layer, and the strontium aluminate sacrificial layer is dissolved in deionized water to obtain a self-supporting silver niobate thin film. This invention achieves damage-free exfoliation of the silver niobate thin film by introducing a water-soluble strontium aluminate sacrificial layer. The prepared flexible self-supporting thin film exhibits good polarization characteristics, double hysteresis loop features, and excellent electrical stability, making it suitable for the development of perovskite-based oxide flexible functional devices. This method is controllable and reproducible, providing high-quality self-supporting functional thin film materials for flexible electronic devices.

This invention discloses a ternary amorphous insulating dielectric film, its preparation method, and its applications. The ternary amorphous insulating dielectric film is composed of a material with the chemical formula Al(X)N, ​​where X is selected from any one or a combination of two or more of B, Si, Zr, and Zn. The ternary amorphous insulating dielectric film has a disordered amorphous structure. This invention uses pulsed laser deposition technology to prepare the ternary amorphous insulating dielectric film. The preparation method is simple and controllable. The prepared ternary amorphous insulating dielectric film exhibits high thermodynamic stability, high dielectric constant, and low leakage current density. It can serve as an insulating material resistant to repeated impacts from strong electric fields and high currents, and is heat-resistant, showing great promise for applications in the semiconductor field.

This invention discloses a surface acoustic wave (SAW) device, filter, and fabrication method using a locally convex piezoelectric thin film structure, relating to the field of integrated circuit technology. The device includes an interdigitated electrode layer and a piezoelectric thin film. A convex piezoelectric thin film structure is disposed above the piezoelectric thin film along the propagation direction of the SAW. The interdigitated electrode layer is disposed above the piezoelectric thin film and forms a bridge-like structure with the convex piezoelectric thin film structure. The convex piezoelectric thin film structure is fabricated using a pulsed laser deposition process, or by an etching process. This device significantly suppresses the excitation of lateral heterogeneous modes, thereby improving the passband performance of the device.

The application provides a self-supporting magnetic phase change material manganese arsenic film and a preparation method and application thereof, and relates to the technical field of magnetic functional materials. The self-supporting magnetic phase change material manganese arsenic film is a manganese arsenic film with a polycrystalline structure. The preparation method comprises the following steps: depositing a water-soluble sacrificial layer on the surface of a magnesium oxide single crystal substrate by a pulsed laser deposition method; depositing a manganese arsenic film with a polycrystalline structure on the surface of the sacrificial layer by a magnetron sputtering method; dissolving the water-soluble sacrificial layer to make the manganese arsenic film peel off to form a self-supporting film, and then transferring the self-supporting film to the surface of a new magnesium oxide single crystal substrate to obtain the transferred self-supporting magnetic phase change material manganese arsenic film. The application solves the problem that phase transition temperature drift or magnetic performance attenuation easily occurs in the film peeling and transferring process, and realizes controllable peeling and transferring of a large-area and high-quality film under the premise of ensuring the stoichiometric ratio stability and the integrity of the crystal structure.

This invention discloses a method for preparing nitride thin films, belonging to the field of advanced functional thin film material preparation technology. The method employs pulsed laser deposition technology and includes the following steps: placing an alloy target material prepared according to the stoichiometric ratio of the target thin film in a deposition chamber, evacuating to a background vacuum ≤, heating a single-crystal substrate to 400-1000℃, turning on a 13.56MHz radio frequency ion source and adjusting the power to 50-500W for ionizing nitrogen gas; injecting ammonia or nitrogen gas with a purity ≥99.999% into the chamber through a high-speed pulse valve with a response delay ≤50μs and an opening / closing time ≤200μs, precisely synchronized with the laser pulse electronic signal; the high-energy metallic plasma plume generated by the laser pulse ablation of the alloy target material undergoes an instantaneous gas-phase reaction with the synchronously injected reactive gas, while simultaneously bombarding the substrate surface with a high-energy nitrogen ion beam, controlling the deposition parameters to deposit a nitride thin film on the substrate, which can be cooled after in-situ annealing.

This invention provides a Si-doped lithium gallium oxide thin-film solar-blind ultraviolet detector, its fabrication method, and its application. The fabrication method includes the following steps: mixing SiO2, Li2CO3, and Ga2O3 polycrystalline powders, and using a solid-state reaction method to obtain Li... y (Ga 1‑x Si x 5O8 polycrystalline target material; Li was prepared on the substrate using pulsed laser deposition. y (Ga 1‑x Si x )5O8 thin film; subsequently in Li y (Ga 1‑x Si x Electrode deposition on 5O8 thin film. Compared with undoped Si Li 0.9 Compared with Ga5O8 thin-film detectors, the solar-blind ultraviolet detector provided by this invention has improved the on / off ratio, responsivity, and detectivity by up to 1177 times, 1130 times, and 1153 times, respectively, and shortened the response time by up to 0.5 s. It has stable working performance and can be applied to fields involving solar-blind ultraviolet signal detection, such as forest fire monitoring and missile exhaust tracking.

The application discloses a high-current-density triode and a preparation method thereof in the field of semiconductor devices. The main steps of the preparation method are as follows: after a collector region and part of a base region are epitaxially grown on a silicon carbide substrate in sequence, a pulsed laser deposition technology is used to form an aluminum gallium nitride zinc oxide core-shell heterostructure doped enhancement layer on the surface of the base region; after the growth of the base region is completed, an atomic layer deposition technology is used to generate an hafnium-zirconium co-doped barium strontium titanate interface passivation layer on the surface of the base region in situ; then, an emitter region is epitaxially grown and electrodes are made. The core-shell doped enhancement material is prepared by metal organic chemical vapor deposition to prepare an aluminum gallium nitride nanorod array core, and then a magnesium-silicon co-doped zinc oxide shell layer is coated on the surface of the core through a coprecipitation and high-temperature annealing process under a specific atmosphere. By introducing the inorganic functional layer, the application cooperatively optimizes carrier injection and transmission, so that the current density, working frequency and stability of the triode are significantly improved.

Apparatus and methods for growing films of complex layered metal oxides with high stoichiometries and high crystal qualities are provided. The layered complex metal oxides include two or more metals and oxygen and have a layered structure. The methods, which are referred to as hybrid pulsed laser deposition (hybrid PLD), synergistically combine the advantages of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) to grow complex metal oxide films that include metals with very different vapor pressures.

This invention discloses an automatically target-changing pulsed laser deposition apparatus and method. The apparatus includes a process chamber, a transfer valve, and a buffer chamber. The process chamber is connected to the buffer chamber via the transfer valve and is configured as an internal vacuum chamber. The buffer chamber has a door at its upper part and operates as a vacuum chamber. A sample stage is located on the upper inner side of the process chamber. Two neck tubes are located on the two sides of the process chamber for guiding an external laser source and mounting a laser detection device, respectively. The process chamber also includes a rotatable target stage for loading and unloading targets from the buffer chamber. The buffer chamber includes a rotating target stage mechanism and a vision camera for placing the target material and recording the bottom features of the target material, respectively. This invention provides an automatically target-changing pulsed laser deposition apparatus and method with a compact structure, precise positioning, and automatic target changing capabilities, enabling fully automated deposition of ultrapure thin films.

The application relates to an interconnection device of a pulsed laser deposition and a molecular beam epitaxy and a coating equipment. A sample transfer assembly transports a sample between a pulsed laser deposition structure and a transfer chamber in a state that a first valve is opened and a second valve is closed, and transports the sample between a molecular beam epitaxy structure and the transfer chamber in a state that the second valve is opened and the first valve is closed. The sample in the transfer chamber can enter and exit the pulsed laser deposition structure through the first valve and can enter and exit the molecular beam epitaxy structure through the second valve. The pulsed laser deposition structure and the molecular beam epitaxy structure do not interfere with each other, and a transfer operation can be carried out without breaking a vacuum, so that effective interconnection of the pulsed laser deposition and the molecular beam epitaxy is realized, the production efficiency of a doping process is improved, and different coating processes of the pulsed laser deposition and the molecular beam epitaxy can be respectively carried out to form a film doped with different materials, so that better material properties and functional effects are achieved.

This invention relates to the field of composite thin film materials and hydrogen sensing technology, specifically disclosing a noble metal-rare earth neodymium nickelate composite thin film, its preparation method, and its applications. The method includes: S1, depositing noble metal stripes on the surface of neodymium nickelate as a target material; S2, transferring a strontium titanate single-crystal substrate to the high-vacuum growth chamber of a pulsed laser deposition equipment, heating the substrate, and maintaining uniform rotation of the target material and substrate; S3, ablating the target material with deposited noble metal stripes using an excimer laser, depositing the resulting feathers onto the substrate, and directly preparing a composite thin film with noble metal nanoparticles embedded in the rare earth neodymium nickelate matrix through a one-step growth process; S4, annealing the composite thin film and then cooling it to obtain a noble metal-rare earth neodymium nickelate composite thin film with good crystallinity. The noble metal-rare earth neodymium nickelate composite thin film prepared by this invention has potential applications in hydrogen sensing.

Examples are disclosed that relate to forming a target body for use in pulsed laser deposition of scandium aluminum nitride films. One example provides a method of preparing a scandium nitride / aluminum nitride target body for a pulsed laser deposition (PLD) system. The method comprises heating a mixture of scandium metal powder and aluminum nitride powder under nitrogen-containing gas to nitridate the mixture of scandium metal powder and aluminum nitride powder, thereby forming a mixture of scandium nitride powder and aluminum nitride powder.

The application provides a method for hetero-epitaxial monocrystalline barium titanate film on a silicon substrate, and belongs to the technical field of thin film material preparation. The method mainly utilizes a pulsed laser deposition technology, effectively inhibits the oxidation of the silicon substrate by maintaining an ultrahigh vacuum environment, and realizes the high-quality epitaxial growth of the monocrystalline barium titanate (00h) film on the silicon (100) substrate by combining the strontium titanate / titanium nitride hetero-buffer layer structure to accurately control the lattice mismatch. The method has the advantages of simple preparation process, controllable process cost, good repeatability and easy realization, and can complete in-situ growth in a single deposition chamber without post-processing operation.

The utility model relates to a kind of conical target holder for pulsed laser deposition equipment, including, target autorotation axis, conical positioning sleeve, locating nut cone and target material fixing assembly, the target material fixing assembly with the locating nut cone bolt connection, the locating nut cone is set in conical positioning sleeve, the target autorotation axis is connected with conical positioning sleeve bottom;The utility model proposes a kind of conical target holder for pulsed laser deposition equipment, its characteristics are quick installation, is the core component of guaranteeing multiple target material accurate switching and stable ablation.

The application relates to the field of spin electronic devices, in particular to a nano-twin Cr2O3 film with room-temperature ferrimagnetism and a preparation method thereof, which is suitable for non-volatile, low-power-consumption and high-sensitivity spin electronic devices. A Cr2O3 epitaxial film is grown on a SrTiO3 (111) substrate by using a pulse laser deposition technology, and a high-density nano-twin is grown in the film through regulation of a film growth process. Two kinds of twin boundaries with different atomic structures are formed in the nano-twin film, one of which is ferromagnetic coupling and has a net magnetic moment, so that the nano-twin Cr2O3 film presents room-temperature ferrimagnetism. The application opens up an effective way for regulating the magnetism of film materials by using nano-twins, thereby laying a foundation for the development of high-performance nano-twin magnetic materials.

The application discloses a layered periodic adjustable bismuth-based oxygen ion conductor thin film material and a preparation method thereof. The layered periodic adjustable bismuth-based oxygen ion conductor thin film material has a layered periodic structure formed by multiple layered structures arranged repeatedly, wherein the layered structure comprises a bismuth oxygen layer and multiple perovskite layers arranged in sequence; the preparation method of the layered periodic adjustable bismuth-based oxygen ion conductor thin film material comprises the following steps: S1, preparing a perovskite ceramic target; S2, processing a substrate; S3, placing the perovskite ceramic target and the substrate in a high-vacuum pulsed laser deposition system to perform pulsed laser deposition, so as to obtain the layered periodic adjustable bismuth-based oxygen ion conductor thin film material. The layered periodic adjustable bismuth-based oxygen ion conductor thin film material disclosed in the embodiment of the application has an atomic-level smooth surface, good physical properties, excellent low-temperature ion conductive performance and a wide application range.

The application relates to a heterojunction showing abnormal Hall effect at low temperature and a preparation method thereof, in particular to the following steps: taking a gadolinium gallium garnet substrate as a base, after the substrate is treated through cleaning and the like, the substrate is placed in a vacuum system, and through steps of heating annealing and degassing, a Tm3Fe5O 12 thin film is grown on the substrate by using pulse laser deposition; and the grown thin film is taken as a base and is placed into a molecular beam epitaxy device, and a SnTe thin film with a certain thickness is grown on the base by using a molecular beam epitaxy technology. By using the method, a high-quality thin film material with abnormal Hall effect under specific temperature conditions can be obtained, the thin film material can show abnormal Hall effect at a temperature below 20K, and the temperature has a regulating effect on the signal size of the abnormal Hall effect.

This invention provides a method for fabricating a terahertz wave absorber with adjustable magnetic response frequency. The method involves: cleaning, annealing, and polishing an aluminum sheet; anodizing using a two-step oxidation method; removing unoxidized aluminum substrates with a saturated CuCl2 solution; and then immersing the sheet in a 5% phosphoric acid solution at 30°C for pore expansion treatment to obtain UTAM (Underlying Tunneling Aluminum Electron Micrometer). This UTAM is then transferred to a single-crystal MgO(100) substrate. Using pulsed laser deposition, FePt material is ablated with a KrF excimer laser and then sprayed onto the UTAM, depositing pyramidal nanodots at the voids in the UTAM. The UTAM is then mechanically removed, followed by annealing to obtain a pyramidal L10-FePt array, which constitutes the terahertz wave absorber with adjustable magnetic response frequency. Applications are also provided for terahertz electromagnetic wave absorbing devices. This invention allows for the control of the resonant frequency by adjusting the geometry of the pyramidal L10-FePt and the spacing of the pyramidal L10-FePt array, which has significant application value in the development of terahertz devices.

The application belongs to the technical field of thin film deposition, and provides a transition metal oxide thin film epitaxially grown on a LaSrAlTaO3 substrate and a preparation method thereof. The application adopts a transition metal oxide target, epitaxially grows the transition metal oxide thin film on the LaSrAlTaO3 substrate based on a pulse laser deposition technology, and accurately designs pulse laser deposition parameters, such as a growth temperature of 700 DEG C, an oxygen pressure of 100 mTorr, a pulse laser repetition frequency of 2 Hz, and a pulse laser energy density of 1.23 J / cm 2 The application can prepare the transition metal oxide thin film with high crystallinity, few defects and excellent surface morphology by using a conventional pulse laser deposition device, thereby providing a basic condition for researching and designing functional devices based on the transition metal oxide thin film, and the application is expected to be widely applied in the fields of catalysis, energy and microelectronic devices.