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Zr-Co-Re thin film getter provided with protection layer, and preparation method thereof

A technology of protective layer and getter, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of high activation temperature of getter, easy oxidation of getter, complicated activation process, etc. , to achieve the effect of low activation temperature, favorable adsorption, and increase of effective area

Inactive Publication Date: 2014-06-11
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This type of thin film getter has the following disadvantages: (1) Vanadium and vanadium oxides are toxic and harmful to the human body; (2) The activation temperature of the getter is high and the activation process is complicated, which is not suitable for the use of high-precision microelectronic devices. It has certain limitations; (3) The getter is easily oxidized when exposed to the atmosphere, and the life of the getter is short

Method used

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  • Zr-Co-Re thin film getter provided with protection layer, and preparation method thereof
  • Zr-Co-Re thin film getter provided with protection layer, and preparation method thereof
  • Zr-Co-Re thin film getter provided with protection layer, and preparation method thereof

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preparation example Construction

[0038] The preparation method of the film getter of the present invention is to deposit a layer of gas absorbing layer on the surface of suede monocrystalline silicon by using pulsed laser deposition (PLD), and deposit a protective layer on the surface of the absorbing layer to prepare a getter film with a double-layer structure. .

[0039] First, prepare textured monocrystalline silicon as a deposition substrate. Use acetone, alcohol, and deionized water to ultrasonically clean the single-crystal silicon wafers for 10-20 minutes each, and dry the silicon wafers with high-purity nitrogen after cleaning; prepare a silicon wafer corrosion solution, the corrosion solution is an aqueous solution of NaOH and isopropanol. The content is 1~5wt.%, and the content of isopropanol is 2~10wt.%. Use a constant temperature heating furnace to heat the solution to 70~100°C and keep it at a constant temperature. Put the prepared silicon wafer into the solution and etch it for 30 ~100min, rins...

Embodiment 1

[0044] Getter films with double-layer structure were prepared by pulsed laser deposition (PLD).

[0045] First, prepare textured monocrystalline silicon as a deposition substrate. Use acetone, alcohol, and deionized water to ultrasonically clean the single-crystal silicon wafers for 15 minutes each, and dry the silicon wafers with high-purity nitrogen after cleaning; prepare a silicon wafer corrosion solution, which is an aqueous solution of NaOH and isopropanol, wherein the NaOH content is 3wt.%, the content of isopropanol is 5wt.%, use a constant temperature heating furnace to heat the solution to 80 ℃ and keep the constant temperature, put the prepared cleaned silicon wafer into the solution and corrode it for 50min, rinse the silicon wafer after taking it out, Blow dry with high-purity nitrogen.

[0046] Thin films were prepared by pulsed laser deposition (PLD) coating method, and the cleaned textured single crystal silicon wafer and alloy target (Zr80.8-Co14.2-Re5wt.%, R...

Embodiment 2

[0050] Getter films with double-layer structure were prepared by pulsed laser deposition (PLD).

[0051] First, prepare textured monocrystalline silicon as a deposition substrate. Use acetone, alcohol, and deionized water to ultrasonically clean the single-crystal silicon wafers for 15 minutes each, and dry the silicon wafers with high-purity nitrogen after cleaning; prepare a silicon wafer corrosion solution, which is an aqueous solution of NaOH and isopropanol, wherein the NaOH content is 2wt.%, and the content of isopropanol is 3wt.%. Use a constant temperature heating furnace to heat the solution to 90°C and keep it at a constant temperature. Put the prepared cleaned silicon wafer into the solution and corrode it for 60 minutes. After taking out the silicon wafer, rinse it. Blow dry with high-purity nitrogen.

[0052] Thin films are prepared by pulsed laser deposition (PLD) coating method, and the cleaned textured single crystal silicon wafer and alloy target (Zr68-Co24-R...

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Abstract

The invention relates to a Zr-Co-Re thin film getter provided with a protection layer, and a preparation method thereof. The Zr-Co-Re thin film getter is composed of a getter layer and the protection layer; main components of the getter layer are Zr, Co, and one or more selected form rare earth elements La, Ce, Pr, and Nd; and main component of the protection layer is Ni. Pulsed laser deposition film plating is adopted, and deposition of the double-layer structured thin film getter containing the protection layer and the getter layer on texture monocrystalline silicon is carried out. The texture substrate is capable of increasing effective area of the getter thin film, and so that inspiratory flow rate and inspiratory capacity are increased. The surface of the getter layer is plated with a Ni protection layer; Ni is capable of realizing dissociation of hydrogen, and increasing absorption amount of hydrogen; and the Ni protection layer is capable of inhibiting absorption of oxygen and reducing activation temperature. Activation of the Zr-Co-Re thin film getter can be realized in roasting processes at a temperature of 180 to 350 DEG C; after roasting, the Zr-Co-Re thin film getter possesses excellent inspiration performance at room temperature, can be used for internal gas residue removing of high vacuum microelectronic devices.

Description

technical field [0001] The invention relates to a Zr-Co-Re film getter with a protective layer and a preparation method thereof. The getter of the invention is a Zr-Co-Re high-performance low-temperature activated non-evaporative type containing a Ni protective layer Thin film getters. Background technique [0002] Getter is a general term for preparations or devices that can effectively absorb certain active gas molecules or fix the atmosphere through physical and chemical actions, also known as getters or getters. [0003] Commonly used getter materials include barium, strontium, magnesium, calcium, titanium, zirconium, hafnium, vanadium, barium aluminum alloy or alloys or compounds of transition metals and aluminum or rare earth elements, among which binary alloys such as Ba-Al, Ti-V, Zr-Al, etc., ternary alloys such as Ba-Al-Ni, Zr-V-Fe, Ti-Zr-V, etc. Such materials generally have high activity, low saturated vapor pressure, and large specific surface area, and are res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/28
Inventor 毛昌辉田士法张心强朱君崔航
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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