231results about How to "Improve inhalation effect" patented technology

By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

The invention discloses high-entropy alloy powder for laser cladding and a preparation method of a cladding layer. The high-entropy alloy powder comprises Ti, Zr, V, Nb, Ta and Mo. In addition, high-entropy alloy powder which comprises Ti, Zr, V, Nb, Ta, Mo and W, high-entropy alloy powder which comprises Ti, Zr, V, Nb, Ta, Mo, W and Cr and the preparation method of the cladding layer of the high-entropy alloy powder for laser cladding are provided. The high-entropy alloy powder mainly comprises two characteristics, namely, the high-entropy effect and the cocktail effect, each kind of powder exerts respective advantages, and therefore the cladding layer with high hardness, high corrosion resistance, excellent tempering softening resisting performance and excellent structure performance is obtained. Metallurgical bonding is formed by an alloy layer and a matrix through laser cladding; the bonding strength of the cladding layer and the matrix is greatly improved, and the heating speed is high; metal of the cladding layer is not prone to being diluted by the matrix; little heat deformation is generated; and therefore the part rejection rate is low.

There is disclosed a method for heat treatment of a silicon substrate produced by the CZ method by utilizing a rapid thermal annealer, wherein the heat treatment is performed under an atmosphere composed of 100% nitrogen, or 100% oxygen, or a mixed atmosphere of oxygen and nitrogen by heating the silicon substrate to a maximum holding temperature within a range of from 1125 DEG C. to the melting point of silicon, and holding the substrate at that maximum holding temperature for a holding time of 5 seconds or more, and then the substrate is rapidly cooled at a cooling rate of 8 DEG C./second or more from the maximum holding temperature. In the method, the amount of oxygen precipitation nuclei in the substrate can be controlled by changing the maximum holding temperature and the holding time. The present invention provide a method for heat treatment of a silicon substrate produced by the CZ method by utilizing an RTA apparatus, which can provide a silicon substrate having a desired oxygen precipitation characteristic without controlling oxygen concentration in the silicon substrate, and an epitaxial wafer utilizing a substrate heat-treated by the method.

A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T₁) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×10¹⁸ atoms/cm³ or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

A light-emitting device contains getter material (58) typically distributed in a relatively uniform manner across the device's active light-emitting portion. An electron-emitting device similarly contains getter material (112, 110/112, 128, 132, and 142) typically distributed relatively uniformly across the active electron-emitting portion of the device.

Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm²/Vs and an S value smaller than 100 mV/dec. can be obtained.

The invention provides a thin-film getter with high gas absorption performance and a preparation method thereof. The thin-film getter is formed by depositing a gas absorbing layer on a metal, silicon, ceramic or glass substrate or on the inner wall of a sealed device or is a film with two-layer structure composed by the gas absorbing layer and an adjusting layer, wherein the gas absorbing layer is multi-component alloy formed by Zr, Co and at least one material selected from the group consisting of Y, La, Ce, Pr and Nd, and the adjusting layer is one or alloy of more selected from the group consisting of Ti, Zr, Y, Hf, Mn, Cu, Cr, Al, Fe, Pt and Ru. The preparation method employs radio frequency magnetron sputtering for deposition of films of the gas absorbing layer and the adjusting layer. The thin-film getter provided by the invention is activated at a temperature in a range of 250 to 350 DEG C, has a high gas absorption rate and high gas absorption capacity, overcomes the problems of poor adhesion, low preparation efficiency and easy poisoning during activation of conventional thin-film getters and can meet design requirements for a vacuum working environment needed for realizing high reliability and a long service life of micro-electromechanical systems (MEMS), flat-panel displays (OLED/FED/LCD), solar heat-insulating boards and hydrogen-sensitive microelectronic devices.

The invention relates to a Zr-Co-Re thin film getter provided with a protection layer, and a preparation method thereof. The Zr-Co-Re thin film getter is composed of a getter layer and the protection layer; main components of the getter layer are Zr, Co, and one or more selected form rare earth elements La, Ce, Pr, and Nd; and main component of the protection layer is Ni. Pulsed laser deposition film plating is adopted, and deposition of the double-layer structured thin film getter containing the protection layer and the getter layer on texture monocrystalline silicon is carried out. The texture substrate is capable of increasing effective area of the getter thin film, and so that inspiratory flow rate and inspiratory capacity are increased. The surface of the getter layer is plated with a Ni protection layer; Ni is capable of realizing dissociation of hydrogen, and increasing absorption amount of hydrogen; and the Ni protection layer is capable of inhibiting absorption of oxygen and reducing activation temperature. Activation of the Zr-Co-Re thin film getter can be realized in roasting processes at a temperature of 180 to 350 DEG C; after roasting, the Zr-Co-Re thin film getter possesses excellent inspiration performance at room temperature, can be used for internal gas residue removing of high vacuum microelectronic devices.

The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region.

The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less, and a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 8 ppma or less and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to a heat treatment to form an oxide precipitate layer in a bulk portion of the wafer, as well as silicon wafers produced by these production methods. Thus, there is provided a DZ-IG silicon wafer in which a DZ layer of high quality is formed, and which can maintain high resistivity even if the wafer is subjected to a heat treatment for device production.

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1x1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1x1012 atoms/cm3 and carbon doping at a concentration of 0.1x1016-5x1016 atoms/cm3 and/or boron doping at a concentration of 1x1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is directed to a silicon epitaxial wafer having an excellent gettering capability all over the radial direction thereof, wherein density of oxide precipitates detectable in the interior of a silicon single crystal substrate after epitaxial growth is 1×10⁹/cm³ or higher at any position in the radial direction.

The invention discloses a non-evaporable low-temperature activated zirconium getter film and a preparation method thereof. The non-evaporable low-temperature activated zirconium getter film comprises an adjusting layer, a gettering layer and a protecting layer which grow on a rough monocrystalline silicon wafer sequentially, wherein in terms of chemical composition, the gettering layer contains 75%-77% by mass of zirconium, 18%-22% by mass of cobalt, 2%-5% by mass of yttrium and the balance of other inevitable impurities; in terms of a microstructure, the gettering layer is formed by densely arranged columnar grains, and the height of columnar tissue is 100-300 nm. The prepared getter film has the advantages of being environment-friendly, high in gettering capacity, low in activation temperature, high in adhesion force, long in service life, easy to prepare, low in cost and the like and is applicable to packaging of mini vacuum devices in the industrial field of microelectronics.

A draining device for draining a fluid from an aircraft engine support strut includes a suction arrangement having an inlet and extending along a longitudinal main axis to form a plenum chamber and a drain tube fluidly connected to the aircraft engine support strut and extending along the longitudinal main axis, the drain tube ending by an outlet, the outlet of the drain tube terminating within the plenum chamber of the suction arrangement. An air flow entering the inlet of the suction arrangement causes a low-pressure region to be created within the plenum chamber, substantially downstream the outlet of the drain tube.

Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a PV region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the P_v region; the wafer has an OSF density of less than 10 cm⁻², a BMD density in the bulk of at least 3.5×10⁸ cm⁻³, and a radial distribution of the BMD density with a fluctuation range BMD_max/BMD_mim of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm²/Vs and an S value smaller than 100 mV/dec. can be obtained.