Thin-film getter with high gas absorption performance and preparation method thereof

A getter and film technology, applied in the field of new vacuum acquisition and maintenance materials and its preparation, can solve the problems of poor film adhesion, low preparation efficiency, and high preparation cost, and achieve increased adhesion, inhibition of poisoning, and high absorption The effect of gas performance
CN103182297AActive Publication Date: 2013-07-03GRIMAT ENG INST CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GRIMAT ENG INST CO LTD
Publication Date
2013-07-03

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Abstract

The invention provides a thin-film getter with high gas absorption performance and a preparation method thereof. The thin-film getter is formed by depositing a gas absorbing layer on a metal, silicon, ceramic or glass substrate or on the inner wall of a sealed device or is a film with two-layer structure composed by the gas absorbing layer and an adjusting layer, wherein the gas absorbing layer is multi-component alloy formed by Zr, Co and at least one material selected from the group consisting of Y, La, Ce, Pr and Nd, and the adjusting layer is one or alloy of more selected from the group consisting of Ti, Zr, Y, Hf, Mn, Cu, Cr, Al, Fe, Pt and Ru. The preparation method employs radio frequency magnetron sputtering for deposition of films of the gas absorbing layer and the adjusting layer. The thin-film getter provided by the invention is activated at a temperature in a range of 250 to 350 DEG C, has a high gas absorption rate and high gas absorption capacity, overcomes the problems of poor adhesion, low preparation efficiency and easy poisoning during activation of conventional thin-film getters and can meet design requirements for a vacuum working environment needed for realizing high reliability and a long service life of micro-electromechanical systems (MEMS), flat-panel displays (OLED / FED / LCD), solar heat-insulating boards and hydrogen-sensitive microelectronic devices.
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Description

technical field

[0001] The invention belongs to a novel vacuum obtaining and maintaining material and a preparation method thereof. Specifically, the present invention relates to a thin-film getter with high gettering performance and a method for preparing the thin-film getter on the inner wall of a substrate or a sealed device. Background technique

[0002] The getter material can absorb the residual active gas in the vacuum device or the active gas released during the use of the device through physical or chemical adsorption, improve the ultimate vacuum level of the vacuum system, avoid the decline of the vacuum quality with the service life, and reduce the activity. Vibration damping of components, reduction of heat dissipation in the inner cavity, avoiding pollution or quality changes caused by the reaction of gas and precision components, to achieve the purpose of maintaining the vacuum quality and ideal working environment of vacuum equipment or sealed devices. Getter...

Claims

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