315 results about "Boron doping" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention discloses a diamond piezoresistive material and pressure sensing application thereof, and particularly relates to a boron-doped diamond-based piezoresistive material and an application method thereof in a sensor, a gradient doping structure and heterogeneous layer design are adopted, and the diamond piezoresistive material with high sensitivity, high linearity, temperature stability, corrosion resistance and radiation resistance is constructed; by optimizing a CVD process and a pattern etching structure, stable piezoresistive response in an environment of-60 DEG C to 250 DEG C is realized, the cycle life exceeds 10 times, and the high-reliability piezoresistive sensor is suitable for high-reliability sensing devices under extreme working conditions such as aerospace engines, deep sea detection equipment and nuclear reactors.

The invention relates to the technical field of semiconductor etching materials, and provides a method for preparing a high-resistivity silicon carbide material and the silicon carbide material. The method comprises the following steps that a substrate is placed in chemical vapor deposition equipment, the chemical vapor deposition equipment is vacuumized, and then inert gas is introduced; silicon carbon source gas and carrier gas are injected into the chemical vapor deposition equipment through a first gas inlet channel, boron source gas is injected into the chemical vapor deposition equipment through a second gas inlet channel, and silicon carbide is deposited on the surface of the substrate through a chemical vapor deposition process; after gradient annealing is carried out, the substrate is removed; wherein in the step 2, the distance between the air inlet of the first air inlet channel and the air inlet of the second air inlet channel is larger than or equal to 20 cm. According to the method, the doping amount of boron in silicon carbide can be obviously improved, so that the resistivity of silicon carbide is improved, and the etching resistance of silicon carbide is improved.

Techniques are provided to form an integrated circuit having different semiconductor devices with different backside contact structures. Field effect transistors (FETs) each includes semiconductor material extending in a first direction between source and drain regions, and gate structures extending in a second direction around the semiconductor material of each FET. Different contact structures are formed on the source or drain regions of the n-channel FETs compared to the p-channel FETs. A backside contact structure on an n-channel source or drain region includes a first layer of phosphorous-doped titanium, a second layer that includes scandium, and a third layer that includes a metal, such as molybdenum. A backside contact structure on a p-channel source or drain region may include only a layer of metal, such as molybdenum, or the layer of metal and a layer of boron-doped titanium. The contact structures may be used to provide enhanced ohmic contact.

The invention relates to the technical field of electrode paste, in particular to electrode paste for a submerged arc furnace and a preparation method of the electrode paste. Comprising three-level grain size distribution anthracite aggregate which is electrically calcined at high temperature and modified by a KH-550 silane coupling agent, a modified silicon carbide whisker and boron-doped graphene-like carbon nitride composite filler, a maleic anhydride-mediated compatible medium-temperature pitch-polyborosiloxane binder and a graphite powder-borax functional additive. A step-by-step mixing and two-stage sintering process is adopted in the preparation process, a covalent bond interface bridging structure is constructed through the coupling agent, the composite dispersing agent regulates and controls the multi-dimensional network distribution of the filler, and the process synergistically improves the compactness and the interface bonding force of the green body. The electrode paste is firm in interface bonding, can form a ceramic protective phase at a high temperature, has excellent conductivity and mechanical strength, and prolongs the service life of the electrode paste for the submerged arc furnace.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention discloses a nitrogen / boron-doped non-noble metal-based material, a synthesis method thereof and application of the nitrogen / boron-doped non-noble metal-based material in a microbial fuel cell. According to the method, a carbon fiber brush is used as a substrate, urea and sodium borohydride are used as a nitrogen source and a carbon source respectively, and the nitrogen / boron doped non-noble metal-based material is synthesized through a hydrothermal method. The electrostatic interaction between graphene oxide and FeCoNi-LDH is utilized to realize tight combination, so that FeCoNi-LDH nanosheets are uniformly dispersed on the surface of the carbon fiber brush, and the problems that LDHs are easy to agglomerate and poor in conductivity are solved; in the boron / nitrogen co-doping process, an efficient electron transmission channel is constructed by adjusting the electronic structure of the composite material, and the material is endowed with excellent electron transmission capability and oxygen reduction performance. In an MFC (Microbial Fuel Cell) test constructed by taking a nitrogen / boron-doped non-noble metal-based material as a cathode, the output voltage and the maximum power density are several times of those of commercial Pt / C and a blank carbon fiber brush, and the carbon fiber brush has a wide application prospect in the field of microbial fuel cells.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a solar cell production line. The preparation method of the solar cell comprises the following steps: forming a first lamination layer comprising a first tunneling layer, a boron-doped polycrystalline silicon layer and a first mask layer on a first surface of an N-type silicon substrate; corresponding parts of the first lamination layer and the N-type silicon substrate in the second region and at least part of the spacer region are removed, so that a groove is formed in the N-type silicon substrate, and the groove surface, formed in the N-type silicon substrate, of the groove is arc-shaped; forming a second lamination layer comprising a second tunneling layer, a phosphorus-doped polycrystalline silicon layer and a second mask layer which are laminated in sequence on the whole side of the first surface; the winding plating layer is removed, the winding plating layer is wound and plated on the second surface of the N-type silicon substrate when the first lamination layer and / or the second lamination layer are / is formed, and the second surface is opposite to the first surface; removing corresponding parts of the second lamination layer in the first region and the spacer region; and removing the first mask layer and the second mask layer.

The invention provides a lithium manganese iron phosphate composite positive electrode material and a preparation method thereof, and relates to the technical field of lithium batteries. The lithium manganese iron phosphate composite positive electrode material is of a core-shell composite structure; wherein the core is lithium manganese iron phosphate; the first coating layer and the second coating layer are sequentially arranged on the outer surface of the core; the first coating layer is made of Cu-Ti alloy; the second coating layer is a boron-doped carbon material; a B-Ti chemical bond is arranged between the Ti element in the first coating layer and the B element in the second coating layer. According to the unique double-layer core-shell structure of the material, through the conductive and firm Cu-Ti alloy and the boron-doped carbon coating layer, the rate capability is improved, and meanwhile, the volume change of the core material is effectively inhibited, so that the cycling stability and safety are enhanced. The key B-Ti chemical bond ensures the tight combination and integrity of the coating layer, and is the basis for realizing long-acting stable protection.

The invention provides an amorphous carbon coated lithium manganese iron phosphate positive electrode material and a preparation method and application thereof, the preparation method comprises the following steps: mixing a lithium source, a ferrous source, a manganese source, a phosphorus source, a carbon source and a solvent to obtain mixed slurry; carrying out spray drying treatment on the mixed slurry, and carrying out plasma treatment on the obtained dried material to obtain a precursor material; and mixing the precursor material with a boron source, and sintering to obtain the amorphous carbon coated lithium iron manganese phosphate positive electrode material. The surface of the lithium manganese iron phosphate positive electrode material is coated with the amorphous carbon layer, the bonding strength of the amorphous carbon coating layer and the positive electrode material is high, the problem of electronic conductivity of the lithium manganese iron phosphate positive electrode material is solved, and meanwhile, the ionic conductivity of the material is improved through boron doping.

The application relates to the technical field of lithium ion battery materials, and discloses a low-expansion silicon-carbon material and a preparation method thereof. The low-expansion silicon-carbon material has a porous core-shell structure, the inner core is graphene / metal-doped amorphous carbon-coated nano silicon, and the shell is boron-doped amorphous carbon. The preparation method comprises the following steps: firstly, a silicon oxide compound, a graphene oxide solution and an organic metal polymer are added into an organic carbon source solution, spray drying is carried out, and an oxidized graphene-coated metal-doped silicon oxide precursor material is obtained through reaction; secondly, a mixed gas of a boron source gas and argon is introduced into the oxidized graphene-coated metal-doped silicon oxide precursor material, and a boron-doped silicon-carbon composite material is obtained through reaction; and thirdly, the boron-doped silicon-carbon composite material is soaked in a hydrofluoric acid solution, and the low-expansion silicon-carbon material is obtained after drying. Through the technical scheme, the problems of high expansion and poor rate performance of the silicon-carbon material in the related art are solved.

The invention provides a lithium manganese iron phosphate positive electrode material, a preparation method thereof and a lithium ion battery. The lithium manganese iron phosphate positive electrode material comprises an inner core, and a first shell and a second shell which sequentially coat the surface of the inner core, wherein the inner core comprises a boron-doped lithium manganese iron phosphate material, the first shell is a boron-doped aluminum oxide layer, and the second shell is a lithium niobium tantalate layer; the doping amount of boron in the lithium manganese iron phosphate positive electrode material is gradually reduced from the inner core to the second shell layer. According to the invention, a plurality of shell layers are constructed for collaborative protection, and gradient boron doping is carried out on the inner core and the first shell, so that the intrinsic electron / ionic conductivity of lithium manganese iron phosphate is improved, the interface stress caused by element distribution mutation between different material layers is avoided, and the balance of bulk phase high conductivity-interface low impedance is realized; and the comprehensive electrochemical performance is improved.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention provides a perovskite crystalline silicon laminated bottom cell structure, a laminated cell and a preparation method, the bottom cell structure comprises a semiconductor substrate layer, the first surface of the semiconductor substrate layer is sequentially provided with a boron doped layer, a suede, a passive film layer and a first metal electrode from inside to outside, the second surface of the semiconductor substrate layer is sequentially provided with a small suede, a tunneling oxide layer and an N-type polycrystalline silicon layer from inside to outside, the N-type polycrystalline silicon layer comprises at least two kinds of polycrystalline silicon layers which are alternately arranged in the horizontal direction and are different in thickness, and the height of the small suede is smaller than that of the suede. According to the invention, the N-type polycrystalline silicon layer is arranged into polycrystalline silicon layers with different thicknesses which are alternately arranged, so that the parasitic absorption of photons is reduced, and the current output of the bottom cell is improved. After photon parasitic absorption is reduced, the deposition thickness of the first polycrystalline silicon layer is increased, and under the condition that the second surface is a textured surface, npoly can uniformly cover the textured surface, so that the passivation level is ensured, and the conditions of exposure defects, increase of carrier recombination and reduction of cell performance are avoided.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.

The invention provides a boron-doped nickel-molybdenum hydrogen evolution electrode and a preparation method thereof, and relates to the field of electrolytic hydrogen production. The electrode is a boron-doped nickel-molybdenum catalyst (NiMoB) which takes a nickel net as a conductive substrate and grows on a nickel metal net framework in situ; the preparation method comprises the following steps: firstly, carrying out hydrothermal reaction in a mixed solution of nickel salt, molybdenum salt and a pH buffer agent, growing nickel-molybdenum oxide (NiMoO4) on a nickel net conductive substrate in situ, and then reducing and boronizing the nickel-molybdenum oxide through boron and hydrogen substances decomposed from a boron-containing small molecular compound under a high-temperature condition to form the multi-element NiMoB hydrogen evolution catalyst. According to the method, a large number of high-activity hydrogen evolution sites are exposed after the nickel-molybdenum oxide is subjected to the reduction replacement process, and the defect-rich and high-activity boron-doped nickel-molybdenum hydrogen evolution electrode is formed and can be applied to the field of hydrogen production.

The invention provides a preparation method of a back contact solar cell, and the method comprises the steps: providing a solar cell substrate which comprises a silicon wafer, and the back surface of the silicon wafer is provided with a first region and a second region, a first tunneling oxide layer, a boron-doped polycrystalline silicon layer, a borosilicate glass layer, a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the first region, and a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the second region; forming a boron-phosphorosilicate glass layer on the back surface of the solar cell substrate; performing first laser processing on the edge of the second area and the first area; texturing the front surface of the silicon wafer, and etching the first laser processing area on the back surface of the silicon wafer; removing the second tunneling oxide layer and the borosilicate glass layer in the first region, and removing the boron-phosphorosilicate glass layer and the phosphorosilicate glass layer in the second region; and preparing a first electrode and a second electrode. According to the preparation method, the conversion efficiency and the yield of the back contact solar cell can be improved.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

The invention provides a preparation method of a boron-doped selective emitter, the emitter and a TOPCon battery, and relates to the technical field of TOPCon batteries. The preparation method comprises the following steps: depositing a borosilicate glass layer on the front surface of a textured silicon wafer through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; removing the borosilicate glass layer in a non-fine grid region on the front surface of the silicon wafer through a laser patterning process to obtain the silicon wafer of which the borosilicate glass layer in a fine grid region on the front surface of the silicon wafer is reserved; forming a shallow doped region in a non-fine grid region on the front surface of the silicon wafer through a boron diffusion process, and forming a primary heavily doped region on a borosilicate glass layer in a fine grid region on the front surface of the silicon wafer; and pushing the boron source in the primary heavily doped region into the silicon wafer through an SE process to form a secondary heavily doped region so as to obtain the boron-doped selective emitter. The preparation method can reduce the proportion of concentric circles generated by silicon wafer oxygen precipitation caused by a high-temperature process, further reduces the contact resistivity of the front metal semiconductor, and improves the efficiency of the cell.

The invention discloses a negative electrode material and a preparation method and application of the negative electrode material, the negative electrode material comprises an inner core and a coating layer, the coating layer wraps the inner core, the coating layer comprises one or more layers, the material of the inner core comprises boron-doped porous silicon carbon, and the material of the inner core comprises boron-doped porous silicon carbon. The material of the coating layer comprises one or more of a solid electrolyte and heterostructure carbon, the negative electrode material can be applied to preparation of a negative electrode of a battery, and the rate capability and the cycle performance of the battery can be improved.

This invention relates to a boron-doped multi-element polyanionic sodium-ion battery cathode material and its preparation method, comprising the following steps: [The method involves] mixing Na₄Fe₂O₃ with... 3‑X B X (PO4) 2‑Y (SiO4) Y The stoichiometric ratio of P2O7 is determined by adding ferrous source, boric acid, sodium source, phosphorus source, and silicon source to water, followed by the addition of carbon source and mixing thoroughly to obtain a mixed slurry; wherein 0.2≤X≤0.5, 0<Y≤1; the mixed slurry is then ground to obtain a sand-milled slurry; the sand-milled slurry is dried to obtain precursor powder; under a protective atmosphere, the precursor powder is sintered at 450~550℃ to obtain boron-doped multi-element polyanion sodium-ion battery cathode material. The introduction of boron and silicon elements in this invention helps reduce raw material costs, improve the electrochemical performance of the material, especially enhancing the structural stability, rate performance, and cycle life of the cathode material, and also lowers the sintering temperature, meeting the requirements for cost reduction and efficiency improvement.

The present invention provides a method for forming a boron-containing diamond film (MPCVD method) that does not use a boron-containing gas G1 as a boron doping element source. [Solution] A method for producing boron-containing diamond films using the MPCVD method, in which a film-forming gas G0 is supplied from a film-forming gas inlet S0, an exhaust gas G2 is discharged from an exhaust port E, and boron-containing diamond is deposited on a substrate P0, characterized in that the film-forming gas G0 is supplied from a film-forming gas inlet S0 and a boron-containing quartz part 95 constituting a quartz injection head 90 is used as a boron doping element source.

The present application relates to a kind of methods for detecting heavy boron defect, the technical field of silicon wafer processing, comprising the following operating steps: first step: heavy boron monocrystalline silicon rod line cut silicon wafer according to every 50 in the middle extraction 1 is formed first piece.Pilot step two: to first piece double side grinding once chamfer and single side grinding is carried out second chamfer.Third step: second chamfer is carried out alkali etching.Fourth step: first piece is placed in the cleaning tank with HCL and H2O2 mixture and is cleaned.Fifth step: after drying, the surface defect of silicon wafer is checked using fluorescent lamp.Sixth step: the first piece of detection qualified is carried out double side polishing.Seventh step: after polishing, it is cleaned using tank washer.Eighth step: it is carried out single side polishing.Ninth step: the silicon wafer after single side polishing is again returned to alkali etching.Tenth step: after drying, the surface defect of silicon wafer is checked using fluorescent lamp.Exclude the scratch influence brought by mechanical processing, improve the accuracy of detection, avoid the problem of existing heavy boron defect detection method detection misjudgment.

The invention discloses a silicon-carbon composite negative electrode material and a preparation method thereof, the silicon-carbon composite negative electrode material comprises a core-shell active unit, a conductive network layer and a composite coating layer, the core-shell active unit is a structure formed by loading boron-doped silicon quantum dots in hollow carbon spheres; the composite material is prepared from the following components in percentage by mass: 11 to 18 weight percent of boron-doped silicon quantum dots, 24 to 36 weight percent of hollow carbon spheres, 31 to 42 weight percent of polyimide-derived nitrogen-doped carbon nanofibers, 3 to 8 weight percent of fluorophosphate-aluminum oxide composite coating layer and 2 to 5 weight percent of lithium titanate modified montmorillonite, the mass ratio of fluorophosphate to aluminum oxide in the fluorophosphate-aluminum oxide composite coating layer is 3: 1, the particle size of the boron-doped silicon quantum dots is 2-5nm, the doping amount of the boron element is 1-3at%, and the purity is not lower than 99.95%. The core-shell structure is used for buffering silicon expansion, the nitrogen-doped carbon fiber is used for constructing a high-efficiency conductive network, the composite coating layer is used for stabilizing an interface, and the inorganic dispersed phase is used for inhibiting agglomeration, so that the specific capacity, the cycling stability and the first charge-discharge efficiency of the lithium ion battery are remarkably improved.

The invention belongs to the technical field of hydrogen storage materials, and particularly relates to a metal borohydride composite material, a preparation method thereof and a hydrogen storage material. The preparation method of the metal borohydride composite material comprises the following steps: preparing the boron-doped carbon-based carrier; the boron-doped carbon-based carrier is mixed with a metal source, a first boron source and a first solvent, hydrogen is added for a thermal reaction, metal borohydride is generated on the surface of the boron-doped carbon-based carrier in situ, and the metal borohydride composite material is obtained. According to the method, a boron-doped carbon-based carrier is prepared, boron and carbon in the boron-doped carbon-based carrier are inert elements, a chemically inert electron-deficient carrier is constructed, and metal cations in metal borohydride are induced to generate charge transfer to the carrier in the in-situ preparation process of the metal borohydride on the surface of the boron-doped carbon-based carrier. Molecular internal electron interaction of metal cations and borohydride anions is weakened, so that the thermodynamic stability of the metal borohydride is reduced.

The invention discloses a boron-doped porous silicon-carbon composite material and a preparation method thereof.The preparation method comprises the following steps that S1, silicon dioxide, a solid carbon source and boron-containing particles are subjected to high-energy ball milling, and a mixed product A is obtained; s2, mechanically mixing the mixed product A with magnesium powder to obtain a mixed product B; s3, putting the mixed product B into a reactor, roasting for 6-9 hours at 600-1000 DEG C under an inert condition, and naturally cooling to obtain a mixed product C; and S4, sequentially carrying out acid pickling on the mixture C in dilute acid and hydrofluoric acid, then cleaning with pure water and absolute ethyl alcohol, and carrying out centrifugal drying to obtain the boron-doped porous silicon-carbon composite material. The method is simple in process and low in raw material cost, and the prepared boron-doped porous silicon-carbon composite material is high in conductivity and good in cycling stability.

This invention relates to the field of chip technology, specifically to a high-voltage GPP chip with composite trenches and its fabrication method, comprising: N layers arranged sequentially from bottom to top. + Substrate, N-layer, P-layer + Layer, the N + The substrate layer and the N layer form an N-N + Substrate, the P + Layer P and N layers constitute P + -N junction; trenches in the chip edge region, with the inner walls of the trenches covered by a composite passivation layer, the composite passivation layer comprising an inner boron-doped silicon glass layer and an outer phosphorus-doped silicon glass layer; an isolation ring on the inner side of the trench; covering P + Layer surface and N + The metal layer on the lower surface of the substrate serves as the electrode lead-out layer of the chip. The optimized fabrication process of this invention is highly compatible with each structure, achieving a comprehensive improvement in the overall performance of the chip. The matching of each fabrication step with the structural design allows the functions of each component of the chip to be fully utilized, synergistically achieving a comprehensive effect of high breakdown voltage, low leakage current, low forward voltage drop, and excellent high-temperature stability.

The embodiment of the present application provides a solar cell and a forming method thereof. The forming method of the solar cell comprises the following steps: providing a substrate; performing boron diffusion treatment on the substrate to form a boron-doped layer and a borosilicate glass layer which are sequentially stacked on the surface of the substrate, and the borosilicate glass layer has interstitial oxygen atoms; the boron diffusion treatment comprises a deposition stage and a pushing stage, the substrate is provided with a boron source and an oxygen source in the deposition stage; the temperature of a reaction chamber in the deposition stage is greater than that in the pushing stage; after the boron diffusion treatment, a passivation stage is performed, a passivation source is provided to the borosilicate glass layer, and the passivation source and the interstitial oxygen atoms react to form an oxygen-containing compound. The embodiment of the present application is beneficial to improving the performance of the solar cell.