194 results about "Boron doping" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

Techniques are provided to form an integrated circuit having different semiconductor devices with different backside contact structures. Field effect transistors (FETs) each includes semiconductor material extending in a first direction between source and drain regions, and gate structures extending in a second direction around the semiconductor material of each FET. Different contact structures are formed on the source or drain regions of the n-channel FETs compared to the p-channel FETs. A backside contact structure on an n-channel source or drain region includes a first layer of phosphorous-doped titanium, a second layer that includes scandium, and a third layer that includes a metal, such as molybdenum. A backside contact structure on a p-channel source or drain region may include only a layer of metal, such as molybdenum, or the layer of metal and a layer of boron-doped titanium. The contact structures may be used to provide enhanced ohmic contact.

The invention relates to the technical field of electrode paste, in particular to electrode paste for a submerged arc furnace and a preparation method of the electrode paste. Comprising three-level grain size distribution anthracite aggregate which is electrically calcined at high temperature and modified by a KH-550 silane coupling agent, a modified silicon carbide whisker and boron-doped graphene-like carbon nitride composite filler, a maleic anhydride-mediated compatible medium-temperature pitch-polyborosiloxane binder and a graphite powder-borax functional additive. A step-by-step mixing and two-stage sintering process is adopted in the preparation process, a covalent bond interface bridging structure is constructed through the coupling agent, the composite dispersing agent regulates and controls the multi-dimensional network distribution of the filler, and the process synergistically improves the compactness and the interface bonding force of the green body. The electrode paste is firm in interface bonding, can form a ceramic protective phase at a high temperature, has excellent conductivity and mechanical strength, and prolongs the service life of the electrode paste for the submerged arc furnace.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention provides a lithium manganese iron phosphate composite positive electrode material and a preparation method thereof, and relates to the technical field of lithium batteries. The lithium manganese iron phosphate composite positive electrode material is of a core-shell composite structure; wherein the core is lithium manganese iron phosphate; the first coating layer and the second coating layer are sequentially arranged on the outer surface of the core; the first coating layer is made of Cu-Ti alloy; the second coating layer is a boron-doped carbon material; a B-Ti chemical bond is arranged between the Ti element in the first coating layer and the B element in the second coating layer. According to the unique double-layer core-shell structure of the material, through the conductive and firm Cu-Ti alloy and the boron-doped carbon coating layer, the rate capability is improved, and meanwhile, the volume change of the core material is effectively inhibited, so that the cycling stability and safety are enhanced. The key B-Ti chemical bond ensures the tight combination and integrity of the coating layer, and is the basis for realizing long-acting stable protection.

The invention provides an amorphous carbon coated lithium manganese iron phosphate positive electrode material and a preparation method and application thereof, the preparation method comprises the following steps: mixing a lithium source, a ferrous source, a manganese source, a phosphorus source, a carbon source and a solvent to obtain mixed slurry; carrying out spray drying treatment on the mixed slurry, and carrying out plasma treatment on the obtained dried material to obtain a precursor material; and mixing the precursor material with a boron source, and sintering to obtain the amorphous carbon coated lithium iron manganese phosphate positive electrode material. The surface of the lithium manganese iron phosphate positive electrode material is coated with the amorphous carbon layer, the bonding strength of the amorphous carbon coating layer and the positive electrode material is high, the problem of electronic conductivity of the lithium manganese iron phosphate positive electrode material is solved, and meanwhile, the ionic conductivity of the material is improved through boron doping.

The application relates to the technical field of lithium ion battery materials, and discloses a low-expansion silicon-carbon material and a preparation method thereof. The low-expansion silicon-carbon material has a porous core-shell structure, the inner core is graphene / metal-doped amorphous carbon-coated nano silicon, and the shell is boron-doped amorphous carbon. The preparation method comprises the following steps: firstly, a silicon oxide compound, a graphene oxide solution and an organic metal polymer are added into an organic carbon source solution, spray drying is carried out, and an oxidized graphene-coated metal-doped silicon oxide precursor material is obtained through reaction; secondly, a mixed gas of a boron source gas and argon is introduced into the oxidized graphene-coated metal-doped silicon oxide precursor material, and a boron-doped silicon-carbon composite material is obtained through reaction; and thirdly, the boron-doped silicon-carbon composite material is soaked in a hydrofluoric acid solution, and the low-expansion silicon-carbon material is obtained after drying. Through the technical scheme, the problems of high expansion and poor rate performance of the silicon-carbon material in the related art are solved.

The utility model relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure and a double-sided selective TOPCon cell. The selective passivation contact structure comprises a silicon wafer, the back surface of the silicon wafer is sequentially provided with a first tunneling oxide layer and first boron-doped polycrystalline silicon, and a back surface electrode contact region of the first boron-doped polycrystalline silicon is also provided with second boron-doped polycrystalline silicon; the thickness of the first boron-doped polycrystalline silicon is smaller than that of the second boron-doped polycrystalline silicon, the crystallization rate of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon, and the doping concentration of the first boron-doped polycrystalline silicon is larger than that of the second boron-doped polycrystalline silicon. The selective passivation contact structure can reduce parasitic absorption of light, reduce recombination and improve the passivation effect and the transverse transmission performance of carriers, so that the open-circuit voltage, the short-circuit current, the fill factor and the cell efficiency of the double-sided selective TOPCon cell can be further improved.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

This invention relates to a boron-doped multi-element polyanionic sodium-ion battery cathode material and its preparation method, comprising the following steps: [The method involves] mixing Na₄Fe₂O₃ with... 3‑X B X (PO4) 2‑Y (SiO4) Y The stoichiometric ratio of P2O7 is determined by adding ferrous source, boric acid, sodium source, phosphorus source, and silicon source to water, followed by the addition of carbon source and mixing thoroughly to obtain a mixed slurry; wherein 0.2≤X≤0.5, 0<Y≤1; the mixed slurry is then ground to obtain a sand-milled slurry; the sand-milled slurry is dried to obtain precursor powder; under a protective atmosphere, the precursor powder is sintered at 450~550℃ to obtain boron-doped multi-element polyanion sodium-ion battery cathode material. The introduction of boron and silicon elements in this invention helps reduce raw material costs, improve the electrochemical performance of the material, especially enhancing the structural stability, rate performance, and cycle life of the cathode material, and also lowers the sintering temperature, meeting the requirements for cost reduction and efficiency improvement.

The present invention provides a method for forming a boron-containing diamond film (MPCVD method) that does not use a boron-containing gas G1 as a boron doping element source. [Solution] A method for producing boron-containing diamond films using the MPCVD method, in which a film-forming gas G0 is supplied from a film-forming gas inlet S0, an exhaust gas G2 is discharged from an exhaust port E, and boron-containing diamond is deposited on a substrate P0, characterized in that the film-forming gas G0 is supplied from a film-forming gas inlet S0 and a boron-containing quartz part 95 constituting a quartz injection head 90 is used as a boron doping element source.

The present application relates to a kind of methods for detecting heavy boron defect, the technical field of silicon wafer processing, comprising the following operating steps: first step: heavy boron monocrystalline silicon rod line cut silicon wafer according to every 50 in the middle extraction 1 is formed first piece.Pilot step two: to first piece double side grinding once chamfer and single side grinding is carried out second chamfer.Third step: second chamfer is carried out alkali etching.Fourth step: first piece is placed in the cleaning tank with HCL and H2O2 mixture and is cleaned.Fifth step: after drying, the surface defect of silicon wafer is checked using fluorescent lamp.Sixth step: the first piece of detection qualified is carried out double side polishing.Seventh step: after polishing, it is cleaned using tank washer.Eighth step: it is carried out single side polishing.Ninth step: the silicon wafer after single side polishing is again returned to alkali etching.Tenth step: after drying, the surface defect of silicon wafer is checked using fluorescent lamp.Exclude the scratch influence brought by mechanical processing, improve the accuracy of detection, avoid the problem of existing heavy boron defect detection method detection misjudgment.

The invention discloses a silicon-carbon composite negative electrode material and a preparation method thereof, the silicon-carbon composite negative electrode material comprises a core-shell active unit, a conductive network layer and a composite coating layer, the core-shell active unit is a structure formed by loading boron-doped silicon quantum dots in hollow carbon spheres; the composite material is prepared from the following components in percentage by mass: 11 to 18 weight percent of boron-doped silicon quantum dots, 24 to 36 weight percent of hollow carbon spheres, 31 to 42 weight percent of polyimide-derived nitrogen-doped carbon nanofibers, 3 to 8 weight percent of fluorophosphate-aluminum oxide composite coating layer and 2 to 5 weight percent of lithium titanate modified montmorillonite, the mass ratio of fluorophosphate to aluminum oxide in the fluorophosphate-aluminum oxide composite coating layer is 3: 1, the particle size of the boron-doped silicon quantum dots is 2-5nm, the doping amount of the boron element is 1-3at%, and the purity is not lower than 99.95%. The core-shell structure is used for buffering silicon expansion, the nitrogen-doped carbon fiber is used for constructing a high-efficiency conductive network, the composite coating layer is used for stabilizing an interface, and the inorganic dispersed phase is used for inhibiting agglomeration, so that the specific capacity, the cycling stability and the first charge-discharge efficiency of the lithium ion battery are remarkably improved.

The invention belongs to the technical field of hydrogen storage materials, and particularly relates to a metal borohydride composite material, a preparation method thereof and a hydrogen storage material. The preparation method of the metal borohydride composite material comprises the following steps: preparing the boron-doped carbon-based carrier; the boron-doped carbon-based carrier is mixed with a metal source, a first boron source and a first solvent, hydrogen is added for a thermal reaction, metal borohydride is generated on the surface of the boron-doped carbon-based carrier in situ, and the metal borohydride composite material is obtained. According to the method, a boron-doped carbon-based carrier is prepared, boron and carbon in the boron-doped carbon-based carrier are inert elements, a chemically inert electron-deficient carrier is constructed, and metal cations in metal borohydride are induced to generate charge transfer to the carrier in the in-situ preparation process of the metal borohydride on the surface of the boron-doped carbon-based carrier. Molecular internal electron interaction of metal cations and borohydride anions is weakened, so that the thermodynamic stability of the metal borohydride is reduced.

The invention discloses a boron-doped porous silicon-carbon composite material and a preparation method thereof.The preparation method comprises the following steps that S1, silicon dioxide, a solid carbon source and boron-containing particles are subjected to high-energy ball milling, and a mixed product A is obtained; s2, mechanically mixing the mixed product A with magnesium powder to obtain a mixed product B; s3, putting the mixed product B into a reactor, roasting for 6-9 hours at 600-1000 DEG C under an inert condition, and naturally cooling to obtain a mixed product C; and S4, sequentially carrying out acid pickling on the mixture C in dilute acid and hydrofluoric acid, then cleaning with pure water and absolute ethyl alcohol, and carrying out centrifugal drying to obtain the boron-doped porous silicon-carbon composite material. The method is simple in process and low in raw material cost, and the prepared boron-doped porous silicon-carbon composite material is high in conductivity and good in cycling stability.

This invention relates to the field of chip technology, specifically to a high-voltage GPP chip with composite trenches and its fabrication method, comprising: N layers arranged sequentially from bottom to top. + Substrate, N-layer, P-layer + Layer, the N + The substrate layer and the N layer form an N-N + Substrate, the P + Layer P and N layers constitute P + -N junction; trenches in the chip edge region, with the inner walls of the trenches covered by a composite passivation layer, the composite passivation layer comprising an inner boron-doped silicon glass layer and an outer phosphorus-doped silicon glass layer; an isolation ring on the inner side of the trench; covering P + Layer surface and N + The metal layer on the lower surface of the substrate serves as the electrode lead-out layer of the chip. The optimized fabrication process of this invention is highly compatible with each structure, achieving a comprehensive improvement in the overall performance of the chip. The matching of each fabrication step with the structural design allows the functions of each component of the chip to be fully utilized, synergistically achieving a comprehensive effect of high breakdown voltage, low leakage current, low forward voltage drop, and excellent high-temperature stability.

The embodiment of the present application provides a solar cell and a forming method thereof. The forming method of the solar cell comprises the following steps: providing a substrate; performing boron diffusion treatment on the substrate to form a boron-doped layer and a borosilicate glass layer which are sequentially stacked on the surface of the substrate, and the borosilicate glass layer has interstitial oxygen atoms; the boron diffusion treatment comprises a deposition stage and a pushing stage, the substrate is provided with a boron source and an oxygen source in the deposition stage; the temperature of a reaction chamber in the deposition stage is greater than that in the pushing stage; after the boron diffusion treatment, a passivation stage is performed, a passivation source is provided to the borosilicate glass layer, and the passivation source and the interstitial oxygen atoms react to form an oxygen-containing compound. The embodiment of the present application is beneficial to improving the performance of the solar cell.

The application discloses a trench gate power MOSFET device with anti-single event burnout reinforcement and a preparation method thereof, which comprises the following steps: etching a deep trench at a center position of the device and forming a P-type shielding area and depositing N-type polysilicon; forming a current expansion layer between a boron-doped area and an N-type drift area by means of ion implantation; and forming a P-type high-concentration doped area and an N-type high-concentration source area above the boron-doped area by means of ion implantation. According to the technical scheme, the internal electric field of the device can be modulated, the electric field distribution on the heavy ion incident track is smoother, the instantaneous power density of the device is reduced, the local high temperature is reduced, the trench oxide layer is protected from high temperature, the forward conduction capability of the device is improved, and the anti-single event burnout capability of the device can be remarkably improved without sacrificing the basic electrical characteristics of the device.

Provided in the present disclosure are a method for preparing a silicon thin film hybrid back-contact solar cell, and a solar cell obtained by using the method. The preparation method comprises: depositing a boron-doped silicon thin film layer on the back surface of monocrystalline silicon by means of high-density plasma chemical vapor deposition.

The present invention relates to the field of solar cells. Disclosed is a method for preparing a TBC solar cell having an edge wrap-around plating layer. In the present invention, an insulating dielectric film is pre-constructed at the edge of a silicon wafer by means of a special combined process of "direct oxidation-indirect deposition-high-temperature annealing" and "high-temperature densification + boron doping", so that an edge wrap-around plating region is insulated and isolated from a silicon wafer substrate. Therefore, even if the edge of a finished TBC solar cell has a wrap-around plating layer, a wrap-around plating portion will not produce significant electric leakage. Secondly, the insulating dielectric film also has an excellent passivation effect, and can further passivate a side region of the silicon wafer, thereby being conducive to improving the electrical performance of the cell. Finally, compared with a conventional TBC solar cell of which the entire edge is a pyramid textured surface, part of the edge of the silicon wafer of the present invention is a pyramid textured surface and the remaining part of the edge of the silicon wafer is a polished surface. The silicon wafer having a textured edge is more prone to fragmentation under the action of an external force, and the polished surface is more conducive to improving the yield of the solar cell.

The invention relates to the technical field of batteries, in particular to a positive electrode material and a preparation method and application thereof. The positive electrode material comprises: an inner core, the inner core satisfies a chemical general formula LizMnxFe (1-x) RyPO4, and 0.5 < = xlt; 1, 0lt; yt; Yt; 0.1, 0.9 < = z < = 1.2; r comprises at least one of Al, Mg, Ca, Sr, V, Cr, Y, Mo, Nb, B, W, La, Sm, Co, Ni, Cu, Zn, Zr and Ti; the coating layer is arranged on at least part of the surface of the inner core, and the coating layer comprises a boron-doped carbon coating layer. The lithium manganese iron phosphate positive electrode material is synergistically modified in a multi-element doping and boron doping carbon coating manner, so that the lithium ion transmission path can be widened, more electron holes can be formed, the electron transmission efficiency can be improved, the conductivity of the material can be improved, and the rate and the dynamic performance of the material can be further improved; and relatively high and stable cycle performance is ensured.

The invention relates to the technical field of a novel negative electrode of a lithium ion battery, in particular to a boron-doped porous carbon gas-phase silicon-carbon composite negative electrode material and a preparation method of the boron-doped porous carbon gas-phase silicon-carbon composite negative electrode material. The boron-doped spherical porous carbon is obtained by template agent mixing, boron source doping, spheroidizing agent and initiator adding, spheroidizing polymerization reaction, impurity removal and drying, and gas-phase etching pore forming. And sequentially depositing silicon in the porous carbon holes and depositing a carbon layer on the surface of the silicon-carbon precursor through two times of chemical vapor deposition to finally prepare the boron-doped porous carbon vapor-phase silicon-carbon composite negative electrode material. The electron conductivity is optimized through boron element doping, a lithium ion transmission channel is improved through a spheroidized porous carbon structure, the rigidity of a matrix is enhanced, and the excellent performance of high magnification, low expansion and long circulation of the material is achieved; the problems that in the prior art, an existing gas-phase silicon-carbon composite negative electrode material is insufficient in rate capability, low in matrix strength and blocked in lithium ion transmission are solved.

The application discloses a Topcon battery and a preparation method thereof, a solar module and a solar system, and relates to the technical field of solar cells. The preparation method of the Topcon battery comprises the following steps: step 1, providing a substrate, and performing a texturing treatment on the surface of the substrate; step 2, obtaining a P+ layer through boron doping and BSG removal; step 3, obtaining a tunneling oxide layer and a doped polysilicon layer by adopting LPCVD and high-temperature phosphorus diffusion; step 4, obtaining an aluminum oxide layer on the front surface of the substrate by adopting ALD; step 5, obtaining a front surface silicon nitride layer on the front surface of the substrate by adopting PECVD; step 6, obtaining a back surface silicon nitride layer on the back surface of the substrate by adopting PECVD, and modifying the doped polysilicon layer, so that a polysilicon layer doped with carbon elements is formed on the surface of the doped polysilicon layer. The application does not need to increase additional equipment, is compatible with the existing LPCVD equipment for preparing the Topcon battery containing the polysilicon layer doped with carbon elements, is simple to operate, low in cost and suitable for large-scale popularization.

The invention discloses an ohmic contact device for improving boron doping by inducing graphite and a preparation method of the ohmic contact device, and relates to the technical field of microelectronics. The substrate is an intrinsic diamond substrate; the lightly doped diamond epitaxial layer is positioned on the upper surface of the substrate; the heavily-doped diamond epitaxial layer is located on the upper surface of the lightly-doped diamond epitaxial layer; the nano graphite layer is positioned on the upper surface of the heavily doped diamond epitaxial layer; the composite conductive layer is located on the upper surface of the nano-graphite layer; and the electrode is positioned on the upper surface of the composite conductive layer and forms ohmic contact with the composite conductive layer. According to the invention, good ohmic contact performance can be realized.

This application provides a method for fabricating a TOPCon cell and the TOPCon cell itself. The method includes: providing a silicon substrate; forming a first tunneling oxide layer and an intrinsic amorphous silicon layer stacked on the surface of the silicon substrate; crystallizing the intrinsic amorphous silicon layer to obtain an intrinsic polycrystalline silicon layer; doping the intrinsic polycrystalline silicon layer with a boron source to obtain a pre-doped conductive layer and a pre-doped BSG layer, wherein the boron doping concentration of the pre-doped conductive layer is lower closer to the silicon substrate; and laser processing the pre-doped conductive layer and the pre-doped BSG layer to obtain a first doped conductive layer and a BSG layer, wherein the doping concentration of the first doped conductive layer is greater than that of the pre-doped conductive layer, and the doping concentration of the BSG layer is less than that of the pre-doped BSG layer. This application solves the problem in the prior art where the low boron doping concentration in the front emitter of the TOPCon cell leads to severe recombination of photogenerated carriers in the metal contact region.

The application discloses a kind of doped porous carbon electrode and its application in high-voltage series hybrid energy storage device, belong to electrochemical energy storage device technical field.The electrode includes metal-based composite copper aluminum foil current collector, 50~100nm thick carbon nano anchoring layer and doped porous carbon active layer, copper layer side is nitrogen-doped hard carbon negative electrode, aluminum layer side is boron-doped activated carbon positive electrode, forms double-sided heteropolar structure.Nitrogen / boron doping introduces weak pseudo-capacitance, improves energy density without loss of cycle life, while inhibiting gas production under high pressure.The application perfectly adapts internal multilayer series high-voltage energy storage device, the whole package energy density can reach 50~55Wh / kg, more than 30% higher than traditional biomass carbon electrode, cycle life ≥150,000 times, gas production rate is reduced by more than 50%, greatly improves the comprehensive performance of high-voltage energy storage device.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.

This application relates to the technical field of sulfide solid electrolyte membranes, their preparation methods, and solid-state batteries. The sulfide solid electrolyte membrane includes a composite support and a gradient-doped electrolyte layer for forming at least one surface of the composite support. The composite support includes boron-doped cellulose nanofibers and boron nitride nanosheets dispersed in the boron-doped cellulose nanofibers. The gradient-doped electrolyte layer is a sulfide solid electrolyte layer with a doping concentration varying along the direction away from the composite support. This application achieves a balance between high ionic conductivity and interfacial stability through a gradient-doped structure, enhances the mechanical strength of the electrolyte membrane and reduces interfacial impedance using in-situ crosslinking technology, and ensures good mechanical and thermal properties while achieving ultra-thinness through the use of a functionalized composite support.

This invention discloses a method for preparing and applying a silicon carbide / boron-doped diamond semiconductor composite coating material. The composite coating material uses semiconductor silicon carbide as a substrate, with a gradient boron-doped SiC semiconductor transition layer deposited on the substrate surface, followed by a gradient boron-doped diamond semiconductor layer on the transition layer surface. The boron content in the gradient boron-doped SiC semiconductor transition layer decreases from top to bottom, and the boron content in the gradient boron-doped diamond semiconductor layer decreases from bottom to top. This invention, by depositing a gradient boron-doped SiC semiconductor transition layer on the silicon carbide surface followed by a gradient boron-doped diamond semiconductor layer, produces a semiconductor composite coating material with excellent conductivity, film-substrate bonding performance, and high stability.