The invention provides a method for manufacturing a PERT crystalline silicon solar battery by adopting a novel doping mode. The method comprises the steps that texturing is carried out on the single face of a silicon chip, cleaning is carried out, phosphorosilicate glass deposits on the front, borosilicate glass deposits on the back, high-temperature annealing is carried out, n doping layers are formed on the front, p doping layers are formed on the back, plasma edge etching is carried out, the phosphorosilicate glass and the borosilicate glass remaining on the surface of the silicon chip are cleaned and removed, an aluminum oxide/silicon nitride laminating film deposits on the single face of the back, a silicon nitride antireflection film deposits on the front, the film is partially opened from the back so that the boron doping layers can be exposed, a back electrode and an aluminum layer are printed on the back, a silver grid line is printed on the front, and sintering and testing are carried out. The preparing method is simple in step, easy to operate, and capable of efficiently manufacturing the crystalline silicon solar battery in a mass mode, and has the advantages that on the basis of commercialized industrial equipment, conventional battery production equipment possessed by an enterprise production line at present is fully utilized, the equipment investment is greatly reduced, and the manufacturing cost of per watt of the battery is not increased.