Method for manufacturing PERT crystalline silicon solar battery by adopting novel doping mode
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ALTUSVIA ENERGY TAICANG
- Publication Date
- 2014-08-20
- Estimated Expiration
- Not applicable · inactive patent
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Figure 1
Abstract
Description
technical field
[0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and relates to a method for manufacturing a high-efficiency crystalline silicon solar cell with full-surface doping on the back and back passivation and back point contact, in particular to a PERT crystalline silicon adopting a new doping method How to make solar cells. Background technique
[0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manuf...