21 results about "Carbon doping" patented technology

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

The application relates to a high-capacity porous niobium pentoxide material and a preparation method and application thereof, relates to niobium pentoxide and preparation and application thereof, and aims to solve the technical problems of low conductivity and slow ion diffusion of existing orthogonal phase niobium pentoxide materials. The material is formed by interconnection of 100-300 nm niobium pentoxide matrix nanoparticles, growth of 10-30 nm secondary nanoparticles on the surface, and a 'raspberry-like' multi-level assembly morphology; the material has a pore diameter of 2-20 nm, a specific surface area of 15-45 m 2 / g; and has an orthogonal phase niobium pentoxide structure and carbon doping characteristics. The material is prepared by using a surfactant containing a quaternary ammonium cation as a soft template, utilizing electrostatic-coordination synergistic action to drive niobium salt and organic quaternary ammonium cation assembly, and high-temperature sintering in an inert atmosphere. When used as a negative electrode of a lithium ion battery, the material reaches a capacity of 350 mAh / g at a current density of 0.1 A / g, and can be used in the field of fast-charging type alkali metal ion batteries.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

The invention discloses a zinc oxide nano sound-sensitive agent as well as a preparation method and application thereof, and belongs to the technical field of sound-sensitive agents. The zinc oxide nano sound-sensitive agent prepared by the invention comprises composite zinc oxide and a mesoporous silicon dioxide layer with glutathione responsiveness from inside to outside; the mesoporous silica layer with glutathione responsiveness is subjected to hydrothermal treatment after being aminated and is modified with hyaluronic acid; the composite zinc oxide is obtained by depositing nano gold particles on the surface of zinc oxide after carbon doping; the zinc oxide nano sonosensitizer prepared by the method is relatively good in biological safety, has better sonodynamic activity and can efficiently generate active oxygen.

This invention discloses a system for adsorbing and treating heavy metal particles in waste incineration flue gas, relating to the field of flue gas treatment. The first adsorption structure includes several sets of adsorption components arranged parallel to each other from top to bottom. Each adsorption component includes a first adsorption section and a second adsorption section connected sequentially. The first adsorption section contains several honeycomb components, each including a honeycomb skeleton with an aminosilane layer on it. The second adsorption section includes an adsorption plate with a carbon-doped boron nitride adsorption layer. The outlet of the second adsorption section is connected to a spiral air inlet component. After passing through the honeycomb skeleton in the first adsorption section, the flue gas enters the adsorption plate in the second adsorption section and then enters the spiral air inlet component of the second adsorption structure through the outlet of the second adsorption section. This system performs multi-stage treatment through the aminosilane layer on the honeycomb skeleton of the first adsorption section, the carbon-doped boron nitride adsorption layer of the second adsorption section, and the spray liquid on the second adsorption structure.

The invention provides a high-salinity wastewater ozone catalyst based on carbon doping induced electron transfer enhancement and a preparation method thereof. The carbon-doped ozone catalyst takes starch as a carbon source, aluminum oxide as a catalyst carrier and ferrocobalt spinel as a catalyst active raw material; the catalyst has the advantages of excellent salt interference resistance, high structural stability and strong oxidation effect on various refractory organics.

The application provides an epitaxy of a HEMT device, a HEMT device and a preparation method thereof, the preparation method comprising the following steps: providing a laminated structure, the laminated structure comprising a substrate, a channel layer located on the substrate and a barrier layer located on the channel layer; forming a Mg-doped p-GaN layer on the barrier layer by using a MOCVD process; introducing a carbon doping source in the process of forming the Mg-doped p-GaN layer, so that the carbon element in the carbon doping source and the Mg element in the Mg-doped p-GaN layer are combined to form pinning centers, the diffusion dynamics of the Mg element is changed, the diffusion of the Mg element is inhibited, and meanwhile the performance and reliability of the device are ensured; and the doping concentration of the carbon element is controlled to be less than the doping concentration of the Mg element, so that the diffusion of the Mg element is inhibited, and meanwhile the hole concentration and low resistance characteristics of the Mg-doped p-GaN layer are maintained.

The invention discloses a carbon doping device for gallium arsenide single crystal growth, which is applied to the field of single crystal growth, and is characterized in that particulate matters on a reaction interface are actively guided into a collecting cover under the action of airflow and gravity by utilizing the design of an inserting cavity and an exhaust channel, so that the particulate matters are prevented from being retained to ensure full contact between a graphite column and a bearing disc interface; when reaction gas enters the inner cavity of the collecting cover with the suddenly increased volume from the narrow inserting cavity, the flow speed is suddenly reduced, so that the sedimentation of particulate matters is accelerated; besides, the large-surface-area inner wall of the collecting cover can react and consume graphite particles and can melt and adhere quartz particles to realize wall surface trapping, and through the step-by-step action of the links, the content of particulate matters in gas entering a crystal growth area is finally and remarkably reduced, and the crystal purity is improved; in addition, the removal effect of the stripped particles is further improved through the first guide cylinder and the second guide cylinder in cooperation with a porous quartz filter ring arranged on the inner side of the exhaust hole.

The invention discloses a double-bed series catalytic system and method for converting carbon dioxide into light olefins, the structure of the system can realize multi-stage temperature regulation and efficient energy utilization, and the system is used for hydrogenating carbon dioxide into high-value hydrocarbons. In addition, two catalysts are arranged in the system, wherein one catalyst is carbon-doped In2O3; the introduction of carbon not only enhances the adsorption of In2O3 to CO2, but also improves the oxygen vacancy concentration, and provides more active sites. In addition, light absorption is also improved by carbon doping, so that the photothermal conversion efficiency is improved. And the other one is potassium-doped Fe5C2. The introduction of K enhances the CO adsorption and stabilizes the Fe5C2 active phase in iron oxide, thereby enhancing the catalytic activity and selectivity to light olefins. By synergistically using the catalysts in a single reactor and realizing an energy-saving condition, CO2 is finally directly converted into light olefin through photo-thermal catalysis, and meanwhile, the method has the advantages of high yield and high selectivity.

The invention discloses a resistance heat preparation method of a high-performance carbon-doped MgB2 superconducting block material. The method comprises the following steps: 1, mixing Mg powder and carbon-coated B powder, and grinding until the Mg powder and the carbon-coated B powder are uniformly mixed; 2, loading the uniformly mixed powder into a tabletting mold, and maintaining the pressure to obtain a precursor powder block; and 3, clamping the precursor powder block between two layers of carbon foils, placing the carbon foils in direct-current resistance heat treatment equipment, adjusting the access current applied to the two ends of the carbon foils to adjust the heating rate so as to realize rapid heating, sintering and preserving heat in an argon atmosphere, and then rapidly cooling and taking out the carbon foils. The Mg powder and the amorphous-form doped B powder are used as precursor powder, the precursor powder is wrapped in the carbon foil for resistance heat treatment after being blended and tabletted, the heating rate is regulated and controlled by adjusting the current accessed to the carbon foil, top-speed heating and cooling are achieved, the high-performance carbon-doped MgB2 superconducting block is generated through reaction within a short time, the preparation process is simple, energy consumption is low, and the method is suitable for industrial production. The method is suitable for low-cost and industrial preparation of high-performance MgB2 blocks.

The application discloses a silver-carbon composite coating carbon doping amount nondestructive detection method, device, equipment, medium and product, relates to the field of nondestructive detection technology and material characterization, and the method comprises the following steps: obtaining the reflection signal of each measuring point on the silver-carbon composite coating sample to terahertz waves; constructing a basic reflection signal model of terahertz waves at the air-coating interface based on the Fresnel reflection law; performing surface roughness correction and dispersion effect compensation on the basic reflection signal model of terahertz waves at the air-coating interface to obtain a terahertz analytical model; taking the minimum of the fitness function as the target, inversing the terahertz analytical model by using a teach-and-learn optimization algorithm according to the reflection signal of the measuring point on the silver-carbon composite coating sample to terahertz waves, and obtaining the refractive index; and qualitatively evaluating or uniformly evaluating the carbon doping amount according to the refractive index, so that the application can realize rapid nondestructive detection of the carbon doping amount of the silver-carbon composite coating.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

The application is a preparation method and application of a silicon monoxide-carbon composite material with a three-dimensional ordered macroporous structure. The method uses organosilane as a silicon source, and the organosilane has an organic unit. After experiencing sol-gel and heat treatment, a uniform carbon doping is realized in the final product 3DOM SiO x The structure is combined with chemical vapor deposition to perform uniform carbon coating. The obtained product has a structure similar to a "honeycomb" and a regular ordered macropore. The preparation process is simple, and the product has high repeatability, high capacity, coulomb efficiency and stability. When used as an electrode material of a lithium ion battery, the honeycomb 3DOM structure and the synergistic effect of the carbon combination make the product have excellent electrochemical performance, and show great potential and application value in promoting three-dimensional nanostructure engineering.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

This application belongs to the technical field of heating film materials, specifically providing a flexible heating film material based on nano-carbon doping and its preparation method. The flexible heating film material based on nano-carbon doping comprises the following components: high-density polyethylene, PE-g-MAH, nano-carbon powder, and tannic acid-modified cobalt-aluminum co-doped oxide. The heating film material obtained in this application has the advantages of good heating performance and high mechanical properties.

A semiconductor device including a base insulation layer, a channel structure positioned on a first surface of the base insulation layer, a gate structure surrounding the channel structure, and a first source / drain pattern and a second source / drain pattern arranged spaced apart from each other along a first direction on both sides of the channel structure. The first and second source / drain patterns includes a liner layer and a filling layer on an inner surface of the liner layer, a portion of the lower and the side surfaces of the first source / drain pattern are covered by the base insulation layer. The liner layer includes a carbon-doped silicon germanium.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.

An embodiment of the present invention provides a method for manufacturing a GaN HEMT power semiconductor epitaxial wafer having a high-quality and high-resistance buffer, comprising: a first GaN buffer layer formation step in which carbon is doped using a metal-organic source as a precursor for carbon doping in a source supplied for GaN growth; and a second GaN buffer layer forming step in which carbon is doped by supplying a carbon doping precursor separately from the source supplied for GaN growth; wherein the precursor for carbon doping in the second GaN buffer layer formation step is at least one of CH4 (methane), C2H4 (ethylene), C2H2 (acetylene), C3H8 (propane), i-C4H10 (isobutane), and [N (CH3) 3] (trimethylamine).

Embodiments according to the present invention provide a method for manufacturing a GaN HEMT power semiconductor epitaxy wafer having a high-quality, high-resistance buffer region, comprising: a first GaN buffer layer formation step in which carbon is doped using a metal-organic source among sources supplied for GaN growth as a precursor for carbon doping; and a second GaN buffer layer formation step in which carbon is doped by supplying a precursor for carbon doping separately from the sources supplied for GaN growth; wherein the precursor for carbon doping in the second GaN buffer layer formation step is at least one of CH4 (methane), C2H4 (ethylene), C2H2 (acetylene), C3H8 (propane), i-C4H10 (iso-butane), and [N(CH3)3] (trimethylamine).

This invention belongs to the field of environmental protection and water purification, specifically relating to a micron-shaped composite metal oxide adsorption electrode material, its preparation method, and its application. The electrode material of this invention is mainly composed of Co3O4 / CeO2@C, exhibiting a micron-shaped petal structure. Its preparation method uses PBA as a precursor, adding corresponding metal salts, and completing the precursor preparation under room temperature stirring. Subsequently, a low-temperature air calcination process yields the composite micron-shaped flower material. The material obtained by this invention consists of stacked petal-shaped micron sheets, exhibiting multi-level porosity, ultra-large specific surface area, and the interlacing of the petals and in-situ uniform carbon doping form an excellent conductive network and stable framework structure, endowing the electrode with excellent cycle stability and long-term operating performance. The material prepared in this invention performs superiorly in capacitive deionization applications in seawater desalination. Compared with the traditional synthesis conditions of carbon-based materials, it has strong universality and is more conducive to widespread application.

This invention provides a boron diffusion precursor structure, a P-type passivated contact structure, and a method for preparing the same. The boron diffusion precursor structure includes a first silicon oxide layer, an intrinsic polycrystalline silicon layer, and a first boron source layer disposed on a silicon substrate. The thickness of the first silicon oxide layer is 1–3 nm, the thickness of the intrinsic polycrystalline silicon layer is 20–400 nm, and the first boron source layer is made of silicon oxide containing carbon, boron, and nitrogen. The carbon doping concentration of the first boron source layer is greater than 1 × 10⁻⁶. 20 cm ‑3 Boron doping concentration greater than 1×10 20 cm ‑3 The thickness of the first boron source layer is greater than or equal to 10 nm. This invention uses silicon oxide containing carbon and boron as the source layer, where boron diffusion is easily controlled. The intrinsic polycrystalline silicon layer acts as a barrier to diffusion, achieving buffered boron diffusion. Boron diffuses through the polycrystalline silicon layer into the silicon substrate, reducing boron enrichment in the interfacial nano-silicon oxide layer, reducing interfacial defects, which is beneficial for improving the passivation performance of the P-type TOPCon structure. Furthermore, it can reduce the thickness of the polycrystalline silicon layer and decrease parasitic absorption.