86 results about "Carbon doping" patented technology

Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material, which provides, in combination with other layer, a work function about 4.4 eV or less, and can include a material selected from tantalum carbide, metallic nitrides, and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel. Optionally, carbon doping can be introduced in the channel.

An apparatus and method is disclosed for synthesizing graphene comprising the steps of providing a substrate and focusing a laser beam in the presence of a carbon doping gas to induce photolytic decomposition of the gas to atomic carbon. The carbon is photolytically reacted with the substrate to grow graphene.

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

The invention relates to a Ti<3+> and carbon codoped TiO2 photocatalyst with visible-light activity and a preparation method of the TiO2 photocatalyst. The structure of the catalyst is: partial Ti<4+> in TiO2 bulk phase lattice is reduced to Ti<3+> (the self doping amount of Ti<3+> is about 0.01at% to 0.3at%); and at the same time, ethanol is bonded on the surface of TiO2 in the form of graphite (the mass percentage between the carbon and TiO2 is 80.43% to 97.04%). Various characterization means find that the carbon doping is mainly compounded on the surface of TiO2 in the form of graphite and bonded on the surface of TiO2 in the way of Ti-O-C. The catalyst coproduced and modified by Ti<3+> and the carbon shows high activity of visible light degraded methyl orange. The doping level formed by Ti<3+> and oxygen vacancy can improve the response range of TiO2 to the visible light, and the graphite compounded on the surface of the catalyst can improve the migration efficiency of photogenerated electrons and confirm that the cooperation between Ti<3+> and the graphite carbon on the surface can promote the visible light catalytic activity of the catalyst to be improved. The preparation method is relatively simple in operation and readily available in raw materials, and the prepared modified photocatalyst is strong in function.

The present invention includes an epitaxial structure (16) grown on a semi-insulating InP substrate (12). First, a buffer layer (14) is grown to isolate defects originated from substrates (12). Then an n-type layer (18) is grown to serve as n-contact layer to collect electrons. Next, a multiplication layer (20) is grown to provide avalanche gain for the APD device (10). Following that, an ultra-thin charge control layer (22) is grown with carbon doping. An absorption layer (24) is grown to serve as the region for creating electronhole pairs due to a photo-excitation. Finally, a p-type layer (28) is grown to serve as p-contact layer to collect holes.

The invention discloses a simple preparation method of carbon self doped carbon nitride nano film electrode, the method is as follows: cyanuric acid and cyanuric chloride are used as precursors, acetonitrile is used as a solvent, a simple solvothermal method is used for controllable growth of different thickness of films comprising self sensitization carbon nitride nanoparticles on surface-hydroxylated ordinary glass, quartz glass, FTO conductive glass or TiO2 / FTO and other substrates, then post heat treatment is used for carbonization of self sensitization carbon nitride to obtain different thickness and density of carbon self doped carbon nitride nano films. The preparation process is simple, by changing of solvothermal reaction time and post heat treatment temperature and the like, the thickness and density of the carbon self doped carbon nitride nano films can be controlled, the area of the film is large, the film is close contact with the substrate, by carbon doping, conductivity of carbon nitride is enhanced, and excellent photocurrent response can be showed when in use in photoelectric water decomposition.

The invention relates to a composite filter tank for internal electrolysis and denitrification, and application thereof. The filter tank sequentially comprises a water distribution area, an iron-carbon doping area, a filler area, a supporting layer and a water collecting area from top to bottom, wherein perforating and water collection plates are respectively arranged on the top parts of the iron-carbon doping area, the filler area, the supporting layer and the water collecting area; a funnel-shaped slope with the gradient being 5 percent is arranged on the bottom part of the water collectionarea; a water inlet is formed in the upper part of the water distribution area; a back washing water outlet is formed in the lower part of the water distribution area; a water outlet, a back washing water inlet and a disturbance water inlet are formed in the bottom part of the water colleting area. According to the composite filter tank for internal electrolysis and denitrification, and the application thereof provided by the invention, on one hand, the problems that an existing deep-bed filter tank is low in simultaneous phosphorus and nitrogen removal efficiency and the operation cost is greatly increased since an external carbon source needs to be fed during an operation process is solved, and on the other hand, the problem that after the deep-bed filter tank is operated for a certain time, a filter material is easy to harden so as not to be easy to back wash is solved.

The invention discloses a preparation method of a nitrogen-carbon doping modified nickel-based catalyst and application thereof for catalyzing nitrocyclohexane hydrogenation reaction. According to the invention, a catalyst is firstly subjected to nitrogen doping modification, and then is loaded with nickel, and the obtained catalyst is applied to the nitrocyclohexane hydrogenation reaction. An N doped carbon support is capable of improving the dispersibility of reactive metal remarkably, the particle size of metal is reduced and the specific surface of metal is increased, so that cheap metal Ni is used to replace noble metal as reactive metal, high selectivity of cyclohexanone-oxime can be ensured and the cost is remarkably reduced. The application process is environmentally friendly and simple and has mild conditions, and the yield of cyclohexanone-oxime is obviously improved by improvement of the reaction conditions and the catalyst.

The invention provides a method for preparing a boron carbide coating through plasma spraying. The method comprises the steps that: step (1), boron carbide powder and carbon powder are uniformly mixed; and the mixed powder is delivered into a plasma spraying device; step (2) the surface of a substrate requiring spraying is pretreated; step (3) plasma spraying is carried out on the surface of the substrate by using the plasma spraying device, such that the boron carbide coating is prepared. According to the invention, the coating is prepared through a carbon-doped B4C powder plasma spraying method. When jet flow is ejected, graphite powder take the priority to react with oxygen, such that B4C oxidation is avoided; with the addition of carbon, B4C high-temperature decomposition is inhibited, such that B4C loss under high temperature can be reduced or even prevented, and B4C coating with good performance can be obtained; with carbon doping, no impurity element is introduced into the coating, such that coating quality is ensured; also, with the addition of graphite powder, powder fluidity is increased, and spraying is facilitated.

A high-resistance and low-dislocation GaN thin film comprises a substrate, a GaN low temperature nucleating layer which is made on the substrate, a GaN combined layer made on the GaN low temperature nucleating layer, and a GaN high-resistance layer made on the GaN combined layer. According to the high-resistance and low-dislocation GaN thin film, the intensity of pressure in a reaction chamber is controlled, and involuntary controllable carbon doping is realized, so that the purposes of compensating background charge carriers and improving the material electrical resistivity are achieved. The ammonia gas flow in the initial growth period is controlled, the combined layer is introduced, and the transition time from three-dimension growth to two-dimension growth of crystal is prolonged, so that the dislocation density of an epitaxial film is reduced under the premise that the high resistance rate of materials is ensured, and the purpose of improving crystal quality is achieved.

The invention relates to a P type microcrystalline silicon carbon film material for a PI flexible substrate solar cell and preparation, belonging to the field of a film solar cell in new energy. The thickness of the P type microcrystalline silicon carbon film material layer is 15-30nm, the conductance is 0.15S/cm-10S/cm, the band gap is more than 2.0eV, and the crystallization rate is 30%-50%. By the optimization research for changing the proportion of carbon doping, the photoelectric performance and the structural characteristics of the material are controlled. P type microcrystalline silicon carbon with high conductance and wide band gap is obtained by utilizing the effect that carbon atom introduction can increase the band gap of a silicon film. The invention has the beneficial effects that the P type microcrystalline silicon carbon material with wide band gap is used in the PI non-transparent flexible substrate amorphous silicon film solar cell and is combined with an optimized p/i buffer layer, the built-in electric field of the film solar cell can be obviously strengthened, the open-circuit voltage of the cell is increased, and therefore the amorphous silicon film solar cell with high photoelectric conversion efficiency is obtained.

The invention discloses an epitaxial structure of a light-emitting diode and a preparation method thereof. The epitaxial structure of the light-emitting diode comprises a substrate; the first semiconductor layer, the first barrier layer, the second barrier layer, the multi-quantum well layer and the second semiconductor layer are sequentially stacked on the substrate, doping types of the first barrier layer and the second semiconductor layer are opposite to each other, and the first semiconductor layer, the first barrier layer, the second barrier layer, the multi-quantum well layer and the second semiconductor layer are respectively subjected to carbon doping. And the carbon doping concentration of the multi-quantum well layer is less than or equal to the carbon doping concentration of the first barrier layer and less than or equal to the carbon doping concentration of the first semiconductor layer and less than or equal to the carbon doping concentration of the second barrier layer and less than or equal to the carbon doping concentration of the second semiconductor layer. According to the epitaxial structure of the light-emitting diode and the preparation method of the epitaxial structure, through setting the change of the carbon doping concentration of each layer in the epitaxial structure, the speed of injecting electrons into a multi-quantum well is reduced, and the probability that the electrons overflow from the multi-quantum well is reduced, so that the light-emitting efficiency of the light-emitting diode is improved.

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

The invention relates to a method for preparing a nanoscale lithium ferric manganese phosphate material by using a co-crystallization method, which comprises the steps of mixing a selected manganese source, an iron source and a phosphorus source according to a ratio, regulating the pH value, performing oxidation treatment to obtain a required intermediate precipitate, and filtering and drying to obtain an intermediate with good morphology and ratio; and mixing and sanding the precursor with a lithium source and a carbon source to obtain mixed slurry with a required particle size, pre-treating the mixed slurry to obtain a carbon-doped early-stage product, and calcining and crushing the carbon-doped early-stage product under the protection of inert gas to obtain the lithium ferric manganese phosphate positive electrode material. According to the invention, the intermediate is synthesized in the uniformly mixed solution, the ratio of iron to manganese is easy to control, the consistency of products in large-scale production can be ensured, and the synthesized LMFP material has good morphology, consistency, stability and high rate performance.

Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.

The invention discloses a preparation method of a layered carbon-doped sodium ferric phosphate positive electrode material. The preparation method comprises the following steps: placing carbonate powder in an inert atmosphere, introducing a gaseous organic matter, carrying out heating reaction to prepare an MCO3/C layered carbon material, mixing the MCO3/C layered carbon material, a sodium source, ferrous phosphate and a dispersing agent in the inert atmosphere, then grinding, then washing and drying to remove the dispersing agent, and heating and reacting in an inert atmosphere to obtain the layered carbon-doped sodium ferric phosphate positive electrode material. Compared with a NaFePO4 positive electrode material synthesized without introduction of layered carbon, the layered carbon-doped NaFePO4 positive electrode material prepared by introduction of the MCO3 powder has the advantages of short sodium ion diffusion distance and higher transmission rate during charging and discharging of a battery, improvement of the phase transition of sodium ions in a sodium ion deintercalation process, improvement of the specific discharge capacity, and enhancement of the cyclic stability of the sodium ferric phosphate crystal structure.

The embodiment of the invention discloses a gallium nitride semiconductor device and a manufacturing method thereof. The manufacturing method comprises the steps of growing an indium-containing bufferlayer on a first surface of a substrate, wherein the buffer layer comprises an indium-containing AlxGa<1-x>N layer, and x is greater than or equal to 0 and less than or equal to 1; forming an unintentionally doped first gallium nitride layer on the surface, which is away from the substrate, of the buffer layer; forming a second gallium nitride layer containing carbon doping on the surface, whichis away from the buffer layer, of the first gallium nitride layer; forming an unintentionally doped third gallium nitride layer on the side, which is away from the first gallium nitride layer, of thesecond gallium nitride layer; and forming an AlyGaN<1-y>N layer on the side, which is away from the second gallium nitride layer, of the third gallium nitride layer, wherein y is greater than 0 and less than or equal to 1. The gallium nitride semiconductor device manufactured by using the method can improve the breakdown voltage of the gallium nitride semiconductor device, reduce the probability of cracking of the gallium nitride semiconductor device in the manufacturing process and improve the performance of the gallium nitride semiconductor device.

The invention discloses an N-type FET. A halo implantation region is located at the bottom of a lightly doped drain region and wraps the lightly doped drain region; an N-type FET has an optimized structure for reducing leakage current, and the optimized structure is characterized in that doped impurities of the halo implantation region are composed of BF2 and carbon which are doped by adopting a common ion implantation process; the doped impurity of the lightly doped drain region is arsenic; the doping concentration and the doping depth of BF2 in the halo ring injection region are provided with a first setting structure, and the arsenic doping concentration of the lightly doped drain region is provided with a second setting structure; under the condition of ensuring that the turn-on current of the NFET meets the target value, the doping concentration of BF2 is reduced and the doping depth of BF2 is increased in the first setting structure, and the doping concentration of arsenic is reduced in the second setting structure and carbon doping of the halo implantation region is combined to maintain or reduce the sub-threshold electric leakage current. The invention further discloses a manufacturing method of the N-type FET. According to the invention, sub-threshold leakage current and junction leakage current of the device can be reduced at the same time, and extremely low electricleakage is realized.