87 results about "Carbon doping" patented technology

A method for incorporating carbon into a wafer at the interstitial a-c silicon interface of the halo doping profile is achieved. A bulk silicon substrate is provided. A carbon-doped silicon layer is deposited on the bulk silicon substrate. An epitaxial silicon layer is grown overlying the carbon-doped silicon layer to provide a starting wafer for the integrated circuit device fabrication. An integrated circuit device is fabricated on the starting wafer by the following steps. A gate electrode is formed on the starting wafer. LDD and source and drain regions are implanted in the starting wafer adjacent to the gate electrode. Indium is implanted to form halo implants adjacent to the LDD regions and underlying the gate electrode wherein the halo implants extend to an interface between the epitaxial silicon layer and the carbon-doped silicon layer wherein carbon ions in the carbon-doped silicon layer act as a silicon interstitial sink for silicon interstitials formed by the halo implants to prevent end of range secondary defect formation.

Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material, which provides, in combination with other layer, a work function about 4.4 eV or less, and can include a material selected from tantalum carbide, metallic nitrides, and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel. Optionally, carbon doping can be introduced in the channel.

Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material, which provides, in combination with other layer, a work function about 4.4 eV or less, and can include a material selected from tantalum carbide, metallic nitrides, and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel. Optionally, carbon doping can be introduced in the channel.

An apparatus and method is disclosed for synthesizing graphene comprising the steps of providing a substrate and focusing a laser beam in the presence of a carbon doping gas to induce photolytic decomposition of the gas to atomic carbon. The carbon is photolytically reacted with the substrate to grow graphene.

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

The invention relates to a method for preparing a cathode material Li4Ti5O12 of a high-performance lithium ion battery. The method comprises the following steps of: adopting the combined method of sol-gel and microwave treatment to prepare micro powder of nano-class Li4Ti5O12, and simultaneously modifying Li4Ti5O12 by carbon doping and metallic doping. The method utilizes the sol-gel method to effectively control chemical composition, phase composition and powder size of the Li4Ti5O12, thereby improving the uniformity and the electric conductivity of the Li4Ti5O12; simultaneously by utilizing the characteristics of the microwave technique of quick temperature rise, even heating and conglobation resistance, the high-power industrial microwave oven is used for treatment, so that the treatment time of the Li4Ti5O12 is greatly shortened, the yield is greatly improved, and the cost and the energy consumption of the material are reduced, the process is simplified, the efficiency on the industrialized production of the lithium ion battery is improved, and the industrialized application is easily achieved; and by doping carbon and metallic elements, the electric conductivity of lithium iron phosphate is greatly improved, and the charging and discharging capacities and the cycle index of the lithium iron phosphate are simultaneously and effectively increased.

The invention relates to a Ti<3+> and carbon codoped TiO2 photocatalyst with visible-light activity and a preparation method of the TiO2 photocatalyst. The structure of the catalyst is: partial Ti<4+> in TiO2 bulk phase lattice is reduced to Ti<3+> (the self doping amount of Ti<3+> is about 0.01at% to 0.3at%); and at the same time, ethanol is bonded on the surface of TiO2 in the form of graphite (the mass percentage between the carbon and TiO2 is 80.43% to 97.04%). Various characterization means find that the carbon doping is mainly compounded on the surface of TiO2 in the form of graphite and bonded on the surface of TiO2 in the way of Ti-O-C. The catalyst coproduced and modified by Ti<3+> and the carbon shows high activity of visible light degraded methyl orange. The doping level formed by Ti<3+> and oxygen vacancy can improve the response range of TiO2 to the visible light, and the graphite compounded on the surface of the catalyst can improve the migration efficiency of photogenerated electrons and confirm that the cooperation between Ti<3+> and the graphite carbon on the surface can promote the visible light catalytic activity of the catalyst to be improved. The preparation method is relatively simple in operation and readily available in raw materials, and the prepared modified photocatalyst is strong in function.

The present invention includes an epitaxial structure (16) grown on a semi-insulating InP substrate (12). First, a buffer layer (14) is grown to isolate defects originated from substrates (12). Then an n-type layer (18) is grown to serve as n-contact layer to collect electrons. Next, a multiplication layer (20) is grown to provide avalanche gain for the APD device (10). Following that, an ultra-thin charge control layer (22) is grown with carbon doping. An absorption layer (24) is grown to serve as the region for creating electronhole pairs due to a photo-excitation. Finally, a p-type layer (28) is grown to serve as p-contact layer to collect holes.

Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

The invention discloses a preparation method of a nano cellulose-reinforced composite photocatalyst. The preparation method comprises the following steps: (1) dissolving silver nitrate and urea in a suspension liquid of nano cellulose, and then drying to obtain a precursor substance; (2) calcining the precursor substance at 450 to 600 DEG C under an oxygen or air atmosphere to obtain a nano cellulose-reinforced composite photocatalytic material. The invention further discloses the nano cellulose-reinforced composite photocatalyst prepared with the method and application thereof. According to the invention, the strong chemisorption and physical entanglement effect of abundant carboxyl groups, hydroxyl groups and network structures intertwined with the carboxyl groups and hydroxyl groups onnano cellulose chains on Ag+ are innovatively utilized, and the Ag+ is fixed on the surface of carbonized nitrogen, so that the loss of the Ag+ is reduced; at the same time, carbon doping is achieved;and C and Ag synergistically promote the catalytic degradation efficiency of the carbonized nitrogen significantly.

The invention discloses a simple preparation method of carbon self doped carbon nitride nano film electrode, the method is as follows: cyanuric acid and cyanuric chloride are used as precursors, acetonitrile is used as a solvent, a simple solvothermal method is used for controllable growth of different thickness of films comprising self sensitization carbon nitride nanoparticles on surface-hydroxylated ordinary glass, quartz glass, FTO conductive glass or TiO2 / FTO and other substrates, then post heat treatment is used for carbonization of self sensitization carbon nitride to obtain different thickness and density of carbon self doped carbon nitride nano films. The preparation process is simple, by changing of solvothermal reaction time and post heat treatment temperature and the like, the thickness and density of the carbon self doped carbon nitride nano films can be controlled, the area of the film is large, the film is close contact with the substrate, by carbon doping, conductivity of carbon nitride is enhanced, and excellent photocurrent response can be showed when in use in photoelectric water decomposition.

The invention relates to a composite filter tank for internal electrolysis and denitrification, and application thereof. The filter tank sequentially comprises a water distribution area, an iron-carbon doping area, a filler area, a supporting layer and a water collecting area from top to bottom, wherein perforating and water collection plates are respectively arranged on the top parts of the iron-carbon doping area, the filler area, the supporting layer and the water collecting area; a funnel-shaped slope with the gradient being 5 percent is arranged on the bottom part of the water collectionarea; a water inlet is formed in the upper part of the water distribution area; a back washing water outlet is formed in the lower part of the water distribution area; a water outlet, a back washing water inlet and a disturbance water inlet are formed in the bottom part of the water colleting area. According to the composite filter tank for internal electrolysis and denitrification, and the application thereof provided by the invention, on one hand, the problems that an existing deep-bed filter tank is low in simultaneous phosphorus and nitrogen removal efficiency and the operation cost is greatly increased since an external carbon source needs to be fed during an operation process is solved, and on the other hand, the problem that after the deep-bed filter tank is operated for a certain time, a filter material is easy to harden so as not to be easy to back wash is solved.

The invention discloses a preparation method of a nitrogen-carbon doping modified nickel-based catalyst and application thereof for catalyzing nitrocyclohexane hydrogenation reaction. According to the invention, a catalyst is firstly subjected to nitrogen doping modification, and then is loaded with nickel, and the obtained catalyst is applied to the nitrocyclohexane hydrogenation reaction. An N doped carbon support is capable of improving the dispersibility of reactive metal remarkably, the particle size of metal is reduced and the specific surface of metal is increased, so that cheap metal Ni is used to replace noble metal as reactive metal, high selectivity of cyclohexanone-oxime can be ensured and the cost is remarkably reduced. The application process is environmentally friendly and simple and has mild conditions, and the yield of cyclohexanone-oxime is obviously improved by improvement of the reaction conditions and the catalyst.

The invention discloses a semiconductor storage unit and a semiconductor storage device, and a manufacturing method for the semiconductor storage device. In the semiconductor storage unit and the semiconductor storage device, P-type doping, carbon doping and other treatment processes are adopted by a polycrystalline silicon float gate of the conventional float gate device so as to obtain deeper electronic storage potential wells; therefore, data retention capacity of the device is improved. Tunneling layer barrier engineering that multiple layers of tunneling media are stacked is introduced, and a band structure of the device is adjusted so as to obtain high erasing speed; therefore, the comprehensive storage characteristic of the device is improved.

The invention provides a method for preparing a boron carbide coating through plasma spraying. The method comprises the steps that: step (1), boron carbide powder and carbon powder are uniformly mixed; and the mixed powder is delivered into a plasma spraying device; step (2) the surface of a substrate requiring spraying is pretreated; step (3) plasma spraying is carried out on the surface of the substrate by using the plasma spraying device, such that the boron carbide coating is prepared. According to the invention, the coating is prepared through a carbon-doped B4C powder plasma spraying method. When jet flow is ejected, graphite powder take the priority to react with oxygen, such that B4C oxidation is avoided; with the addition of carbon, B4C high-temperature decomposition is inhibited, such that B4C loss under high temperature can be reduced or even prevented, and B4C coating with good performance can be obtained; with carbon doping, no impurity element is introduced into the coating, such that coating quality is ensured; also, with the addition of graphite powder, powder fluidity is increased, and spraying is facilitated.

A high-resistance and low-dislocation GaN thin film comprises a substrate, a GaN low temperature nucleating layer which is made on the substrate, a GaN combined layer made on the GaN low temperature nucleating layer, and a GaN high-resistance layer made on the GaN combined layer. According to the high-resistance and low-dislocation GaN thin film, the intensity of pressure in a reaction chamber is controlled, and involuntary controllable carbon doping is realized, so that the purposes of compensating background charge carriers and improving the material electrical resistivity are achieved. The ammonia gas flow in the initial growth period is controlled, the combined layer is introduced, and the transition time from three-dimension growth to two-dimension growth of crystal is prolonged, so that the dislocation density of an epitaxial film is reduced under the premise that the high resistance rate of materials is ensured, and the purpose of improving crystal quality is achieved.

The invention belongs to the technical field of pavement materials, discloses an activated carbon fiber based composite photocatalyst preparation method and solves the problem that conventional TiO2 only absorbs ultraviolet light and is high in surface energy, prone to agglomeration and difficult in gathering of pollutants on the TiO2 surface. The method includes: pretreating activated carbon fibers, adding methyl alcohol into a reactor, sequentially adding tetrabutyl titanate, glycol ether, lanthanum nitrate solution, glucose solution, lauric acid and activated carbon fibers, well mixing, performing reaction for 24h in the reactor, cooling to the room temperature, and cleaning and drying with absolute ethyl alcohol to obtain an activated carbon fiber based composite photocatalyst; finally, assessing effectiveness of the composite photocatalyst in catalytic degradation of main components in tail gas under simulated sunlight, adjusting the concentration of lanthanum nitrate and glucosesolution to determine optimum lanthanum and carbon doping quantity in TiO2 to prepare the activated carbon fiber based composite photocatalyst. The activated carbon fiber based composite photocatalystprepared according to the method is capable of absorbing visible light, and pollutant gathering promotion and photocatalytic efficiency improvement are realized.

The invention relates to a lithium titanate negative electrode material having a multistage carbon-clad network structure, and a preparation method and an application thereof. A novel conductive carbon material is doped in a TiO2 preparation process to achieve in-situ internal carbon doping in a lithium titanate raw material precursor, and the lithium titanate negative electrode material having the novel conductive carbon material doped therein and the multistage carbon-clad network structure clad by conventional carbon via external secondary carbon cladding synthesis. The lithium titanate negative electrode material having the multistage carbon-clad network structure provided by the invention can realize rapid charging and discharging at a large rate and fully exert the capacity of activesubstances in material particles, and is suitable for a lithium ion secondary battery electrode material.

The invention discloses an epitaxial structure of a light-emitting diode and a preparation method thereof. The epitaxial structure of the light-emitting diode comprises a substrate; the first semiconductor layer, the first barrier layer, the second barrier layer, the multi-quantum well layer and the second semiconductor layer are sequentially stacked on the substrate, doping types of the first barrier layer and the second semiconductor layer are opposite to each other, and the first semiconductor layer, the first barrier layer, the second barrier layer, the multi-quantum well layer and the second semiconductor layer are respectively subjected to carbon doping. And the carbon doping concentration of the multi-quantum well layer is less than or equal to the carbon doping concentration of the first barrier layer and less than or equal to the carbon doping concentration of the first semiconductor layer and less than or equal to the carbon doping concentration of the second barrier layer and less than or equal to the carbon doping concentration of the second semiconductor layer. According to the epitaxial structure of the light-emitting diode and the preparation method of the epitaxial structure, through setting the change of the carbon doping concentration of each layer in the epitaxial structure, the speed of injecting electrons into a multi-quantum well is reduced, and the probability that the electrons overflow from the multi-quantum well is reduced, so that the light-emitting efficiency of the light-emitting diode is improved.

Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

The invention relates to a method for preparing a nanoscale lithium ferric manganese phosphate material by using a co-crystallization method, which comprises the steps of mixing a selected manganese source, an iron source and a phosphorus source according to a ratio, regulating the pH value, performing oxidation treatment to obtain a required intermediate precipitate, and filtering and drying to obtain an intermediate with good morphology and ratio; and mixing and sanding the precursor with a lithium source and a carbon source to obtain mixed slurry with a required particle size, pre-treating the mixed slurry to obtain a carbon-doped early-stage product, and calcining and crushing the carbon-doped early-stage product under the protection of inert gas to obtain the lithium ferric manganese phosphate positive electrode material. According to the invention, the intermediate is synthesized in the uniformly mixed solution, the ratio of iron to manganese is easy to control, the consistency of products in large-scale production can be ensured, and the synthesized LMFP material has good morphology, consistency, stability and high rate performance.

Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.

The invention discloses a variable doping structure of a transmission-type photoelectric cathode material for enhancing thermal stability. An AlGaAs corrosion barrier layer, a GaAs zinc heavy doping layer, a GaAs zinc light doping layer, a GaAs carbon gradient doping layer, a GaAs spacer layer and an AlGaAs window layer are arranged sequentially upwards on a GaAs100 substrate material layer. The variable doping structure of the transmission-type photoelectric cathode material for enhancing the thermal stability has the advantages of: enhancing short wave response of a transmission-type GaAs or InGaAs photoelectric cathode and improving the thermal stability during the photoelectric cathode technical process as the carbon doping and variable doping technologies are adopted; reducing a caesiated exhaustion region and increasing an escaping probability of photon-generated carriers as the variable doping comprehensively adopts zinc and carbon doping, and a caesiated surface adopts the zinc heavy doping; reducing a recombination rate of minority carriers of the interface as the interface of the window layer adopts the carbon light doping; and optimizing a high-performance photoelectric cathode as the carbon variable doping is adopted between an interface of the window layer and the zinc heavy doping layer to form a built-in electric field with good thermal stability.

The invention provides a phosphorus-doped functionalized mesoporous carbon material preparation method. The method includes steps: (1) mixed liquid A preparation; (2) mixed liquid B preparation; (3) phosphorus-containing composite precursor preparation; (4) phosphorus-containing composite precursor carbonization treatment; (5) sample MC-TPP preparation. By innovative integration of functional element doping and mesoporous synthesis, synchronous preparation is realized, triphenylphosphine is optimal in effect according to researches on different phosphorus sources, and triphenylphosphine serving as a significant precursor not only provides a phosphorus source for carbon doping but also serves as a mesoporous synthesis additive playing a role in pore expanding. The prepared material has advantages of uniform mesoporous structure, excellent phosphorus doping effects, high element dispersity and the like.

The invention discloses a preparation method of a layered carbon-doped sodium ferric phosphate positive electrode material. The preparation method comprises the following steps: placing carbonate powder in an inert atmosphere, introducing a gaseous organic matter, carrying out heating reaction to prepare an MCO3 / C layered carbon material, mixing the MCO3 / C layered carbon material, a sodium source, ferrous phosphate and a dispersing agent in the inert atmosphere, then grinding, then washing and drying to remove the dispersing agent, and heating and reacting in an inert atmosphere to obtain the layered carbon-doped sodium ferric phosphate positive electrode material. Compared with a NaFePO4 positive electrode material synthesized without introduction of layered carbon, the layered carbon-doped NaFePO4 positive electrode material prepared by introduction of the MCO3 powder has the advantages of short sodium ion diffusion distance and higher transmission rate during charging and discharging of a battery, improvement of the phase transition of sodium ions in a sodium ion deintercalation process, improvement of the specific discharge capacity, and enhancement of the cyclic stability of the sodium ferric phosphate crystal structure.

The invention relates to a device for growing semiconductor crystals. Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

The embodiment of the invention discloses a gallium nitride semiconductor device and a manufacturing method thereof. The manufacturing method comprises the steps of growing an indium-containing bufferlayer on a first surface of a substrate, wherein the buffer layer comprises an indium-containing AlxGa<1-x>N layer, and x is greater than or equal to 0 and less than or equal to 1; forming an unintentionally doped first gallium nitride layer on the surface, which is away from the substrate, of the buffer layer; forming a second gallium nitride layer containing carbon doping on the surface, whichis away from the buffer layer, of the first gallium nitride layer; forming an unintentionally doped third gallium nitride layer on the side, which is away from the first gallium nitride layer, of thesecond gallium nitride layer; and forming an AlyGaN<1-y>N layer on the side, which is away from the second gallium nitride layer, of the third gallium nitride layer, wherein y is greater than 0 and less than or equal to 1. The gallium nitride semiconductor device manufactured by using the method can improve the breakdown voltage of the gallium nitride semiconductor device, reduce the probability of cracking of the gallium nitride semiconductor device in the manufacturing process and improve the performance of the gallium nitride semiconductor device.