39 results about "Carbon doping" patented technology

The invention relates to the technical field of activated carbon, and discloses a surface modification method of biomass super-capacitor activated carbon, which comprises the following steps: (1) spraying an aqueous solution containing a carbon and nitrogen source dopant onto the surface of the biomass super-capacitor activated carbon and realizing complete infiltration, the carbon and nitrogen source dopant being glucosamine; (2) carrying out hydrothermal carbonization at 120-300 DEG C in an inert atmosphere, and then drying; then carrying out heat treatment at 400-500 DEG C in an inert atmosphere; and (3) carrying out activation reaction in the atmosphere of CO2, water vapor or mixed gas of CO2 and water vapor. According to the preparation method, the activated carbon is doped by adopting the carbon and nitrogen source doping agent, meanwhile, hydrothermal carbonization is carried out, surface functional groups of biomass activated carbon are removed, defect sites in the structure of the biomass activated carbon are repaired through carbon doping, structured doping is achieved, lattice distortion of the carbon material can be small through nitrogen doping, and then the conductivity and cycling stability of the capacitor carbon are improved.

The invention provides a BiOCl photocatalyst as well as a preparation method and application thereof, and relates to the technical field of photocatalytic materials. The preparation method comprises the following steps: mixing bismuth salt, chlorine salt and a solvent, and carrying out solvothermal reaction on the obtained mixed solution to obtain the BiOCl photocatalyst, the solvent is ethylene glycol, water or ethanol; when the solvent is ethylene glycol or water, the mixed solution further comprises glucose. The morphology and crystal face of BiOCl can be simply and conveniently regulated and controlled, the BiOCl photocatalyst with excellent photocatalytic performance is obtained, specifically, accurate morphology regulation and control are realized by regulating a reaction solvent, and crystal face regulation and control and carbon doping are realized by regulating and controlling glucose addition. In addition, according to the method, reaction raw materials are simple and easy to obtain, reaction conditions are mild, and addition of a surfactant is not needed. The BiOCl photocatalyst prepared by the invention has excellent performance of photocatalytic degradation of organic pollutants and photocatalytic reduction of heavy metal ions.

The invention relates to application of a molybdenum-based electrocatalyst cathode in electrocatalytic degradation of antibiotics in wastewater. According to the cathode, foamed nickel serves as a substrate, and carbon-doped oxygen vacancy-enriched molybdenum oxide C-MoO2-X is loaded on the surface of the substrate. The preparation method of the electrocatalyst is simple to operate, low in cost and environment-friendly, and the NF net structure with excellent performance can effectively avoid MoO2 agglomeration in the calcination process. According to the preparation method, pressure stress is generated by utilizing lattice shrinkage after carbon doping, adjacent O atoms are forced to be separated from lattices, stable oxygen vacancies are formed in MoO2 lattices through electron reconstruction, electron transfer is enhanced, strong Mo-C bonds are formed, Mo atoms are stabilized, oxidation dissolution of the Mo atoms is inhibited, the oxygen adsorption behavior is optimized, and an activation energy barrier from O2 to H2O2 to O2 is reduced. According to the invention, by designing a carbon-doped pyrolysis process, the selective generation of O2 of more than 90% is realized. The research provides a new design scheme for preparing an efficient and cheap non-noble metal ORR catalyst.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

The application relates to a high-capacity porous niobium pentoxide material and a preparation method and application thereof, relates to niobium pentoxide and preparation and application thereof, and aims to solve the technical problems of low conductivity and slow ion diffusion of existing orthogonal phase niobium pentoxide materials. The material is formed by interconnection of 100-300 nm niobium pentoxide matrix nanoparticles, growth of 10-30 nm secondary nanoparticles on the surface, and a 'raspberry-like' multi-level assembly morphology; the material has a pore diameter of 2-20 nm, a specific surface area of 15-45 m 2 / g; and has an orthogonal phase niobium pentoxide structure and carbon doping characteristics. The material is prepared by using a surfactant containing a quaternary ammonium cation as a soft template, utilizing electrostatic-coordination synergistic action to drive niobium salt and organic quaternary ammonium cation assembly, and high-temperature sintering in an inert atmosphere. When used as a negative electrode of a lithium ion battery, the material reaches a capacity of 350 mAh / g at a current density of 0.1 A / g, and can be used in the field of fast-charging type alkali metal ion batteries.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

A method of manufacturing a High-Electron-Mobility Transistor (HEMT) includes: preparing a substrate; forming a first buffer over the substrate; forming a second buffer over the first buffer, wherein forming the second buffer includes doping a first thickness of a material such as gallium nitride (GaN) with a first concentration of a dopant such as carbon, and doping a second thickness of the material with a second concentration of the dopant such that the second concentration of dopant has a gradient though the second thickness which progressively decreases in a direction away from the first thickness; forming a channel layer such as a GaN channel over the second buffer; forming a barrier layer such as aluminum gallium nitride (AlGaN) over the channel layer; and forming drain, source and gate terminals for the HEMT.

The invention discloses a high-capacity porous niobium pentoxide material as well as a preparation method and application thereof, relates to niobium pentoxide as well as preparation and application thereof, and aims to solve the technical problems of low conductivity and slow ion diffusion of the conventional orthorhombic phase niobium pentoxide material. The material is formed by interconnection of niobium pentoxide matrix nanoparticles of 100-300 nm, secondary nanoparticles of 10-30 nm grow on the surface, and the material is in a raspberry-shaped multistage assembly morphology; the catalyst has mesopores with the pore diameter of 2-20 nm and the specific surface area of 15-45 m < 2 > / g; and the material has an orthorhombic phase niobium pentoxide structure and a carbon doping characteristic. The preparation method comprises the following steps: by taking a surfactant containing quaternary ammonium cations as a soft template, driving niobium salt and organic quaternary ammonium cations to be assembled by utilizing an electrostatic-coordination synergistic effect, and sintering at high temperature in an inert atmosphere. When used as a negative electrode of a lithium ion battery, the lithium ion battery can reach the capacity of 350 mAh / g under the current density of 0.1 A / g, and can be used in the field of fast-charge alkali metal ion batteries.

The invention discloses a zinc oxide nano sound-sensitive agent as well as a preparation method and application thereof, and belongs to the technical field of sound-sensitive agents. The zinc oxide nano sound-sensitive agent prepared by the invention comprises composite zinc oxide and a mesoporous silicon dioxide layer with glutathione responsiveness from inside to outside; the mesoporous silica layer with glutathione responsiveness is subjected to hydrothermal treatment after being aminated and is modified with hyaluronic acid; the composite zinc oxide is obtained by depositing nano gold particles on the surface of zinc oxide after carbon doping; the zinc oxide nano sonosensitizer prepared by the method is relatively good in biological safety, has better sonodynamic activity and can efficiently generate active oxygen.

This invention discloses a system for adsorbing and treating heavy metal particles in waste incineration flue gas, relating to the field of flue gas treatment. The first adsorption structure includes several sets of adsorption components arranged parallel to each other from top to bottom. Each adsorption component includes a first adsorption section and a second adsorption section connected sequentially. The first adsorption section contains several honeycomb components, each including a honeycomb skeleton with an aminosilane layer on it. The second adsorption section includes an adsorption plate with a carbon-doped boron nitride adsorption layer. The outlet of the second adsorption section is connected to a spiral air inlet component. After passing through the honeycomb skeleton in the first adsorption section, the flue gas enters the adsorption plate in the second adsorption section and then enters the spiral air inlet component of the second adsorption structure through the outlet of the second adsorption section. This system performs multi-stage treatment through the aminosilane layer on the honeycomb skeleton of the first adsorption section, the carbon-doped boron nitride adsorption layer of the second adsorption section, and the spray liquid on the second adsorption structure.

A high electron mobility transistor includes a substrate, a nucleating layer, a buffer layer, a channel layer and a barrier layer stacked in sequence, the buffer layer includes a first buffer region, a second buffer region and a third buffer region, the first buffer region includes a first nitride stack layer and a second nitride stack layer, the first nitride stack layer is disposed on the nucleating layer, and the second nitride stack layer is disposed on the channel layer. The second nitride stacking layer is arranged on the first nitride stacking layer; the second buffer region is arranged on the first buffer region and is doped with carbon and iron; the third buffer region is arranged on the second buffer region and is doped with carbon and iron; the carbon doping concentration of the third buffer region is greater than the iron doping concentration, the second nitride stack layer is doped with carbon and iron, and the carbon doping concentration of the second nitride stack layer is greater than the iron doping concentration.

The invention relates to the field of contaminated soil remediation, in particular to a contaminated soil remediation agent, a preparation method thereof and a soil remediation method. The contaminated soil remediation agent comprises a micro-nano iron-based material, an auxiliary material and an oxidizing agent, the micro-nano iron-based material is prepared through heteroatomization modification, carbon doping modification and antioxidant modification. The auxiliary materials comprise a liquid-phase reducing agent, an iron-cycle-based strengthening auxiliary material and a solubilizing and desorbing surfactant. According to the remediation agent disclosed by the invention, through mutual cooperation of the micro-nano iron-based material, the auxiliary material and the oxidizing agent, the capability of decomposing organic pollutants is improved, and the remediation effect on contaminated soil in the ferrous metallurgy industry is improved.

The invention provides a high-salinity wastewater ozone catalyst based on carbon doping induced electron transfer enhancement and a preparation method thereof. The carbon-doped ozone catalyst takes starch as a carbon source, aluminum oxide as a catalyst carrier and ferrocobalt spinel as a catalyst active raw material; the catalyst has the advantages of excellent salt interference resistance, high structural stability and strong oxidation effect on various refractory organics.

The application provides an epitaxy of a HEMT device, a HEMT device and a preparation method thereof, the preparation method comprising the following steps: providing a laminated structure, the laminated structure comprising a substrate, a channel layer located on the substrate and a barrier layer located on the channel layer; forming a Mg-doped p-GaN layer on the barrier layer by using a MOCVD process; introducing a carbon doping source in the process of forming the Mg-doped p-GaN layer, so that the carbon element in the carbon doping source and the Mg element in the Mg-doped p-GaN layer are combined to form pinning centers, the diffusion dynamics of the Mg element is changed, the diffusion of the Mg element is inhibited, and meanwhile the performance and reliability of the device are ensured; and the doping concentration of the carbon element is controlled to be less than the doping concentration of the Mg element, so that the diffusion of the Mg element is inhibited, and meanwhile the hole concentration and low resistance characteristics of the Mg-doped p-GaN layer are maintained.

The invention discloses a carbon doping device for gallium arsenide single crystal growth, which is applied to the field of single crystal growth, and is characterized in that particulate matters on a reaction interface are actively guided into a collecting cover under the action of airflow and gravity by utilizing the design of an inserting cavity and an exhaust channel, so that the particulate matters are prevented from being retained to ensure full contact between a graphite column and a bearing disc interface; when reaction gas enters the inner cavity of the collecting cover with the suddenly increased volume from the narrow inserting cavity, the flow speed is suddenly reduced, so that the sedimentation of particulate matters is accelerated; besides, the large-surface-area inner wall of the collecting cover can react and consume graphite particles and can melt and adhere quartz particles to realize wall surface trapping, and through the step-by-step action of the links, the content of particulate matters in gas entering a crystal growth area is finally and remarkably reduced, and the crystal purity is improved; in addition, the removal effect of the stripped particles is further improved through the first guide cylinder and the second guide cylinder in cooperation with a porous quartz filter ring arranged on the inner side of the exhaust hole.

The invention discloses a double-bed series catalytic system and method for converting carbon dioxide into light olefins, the structure of the system can realize multi-stage temperature regulation and efficient energy utilization, and the system is used for hydrogenating carbon dioxide into high-value hydrocarbons. In addition, two catalysts are arranged in the system, wherein one catalyst is carbon-doped In2O3; the introduction of carbon not only enhances the adsorption of In2O3 to CO2, but also improves the oxygen vacancy concentration, and provides more active sites. In addition, light absorption is also improved by carbon doping, so that the photothermal conversion efficiency is improved. And the other one is potassium-doped Fe5C2. The introduction of K enhances the CO adsorption and stabilizes the Fe5C2 active phase in iron oxide, thereby enhancing the catalytic activity and selectivity to light olefins. By synergistically using the catalysts in a single reactor and realizing an energy-saving condition, CO2 is finally directly converted into light olefin through photo-thermal catalysis, and meanwhile, the method has the advantages of high yield and high selectivity.

The utility model discloses a passivation contact cell, a photovoltaic assembly and a system. The cell comprises a silicon wafer body. Front and back surface structural layers; and front and back metal electrodes. According to the utility model, on one hand, a uniform, compact and void-free back metal electrode is obtained through carbon doping, the surface tension of hydrogen-doped polycrystalline silicon is improved, and the water contact angle is increased, so that an electroplating solution is difficult to attach to a hydrogen / phosphorus-doped polycrystalline silicon layer, excessive hydrogen bubbles are retained on the surface of the polycrystalline silicon, and the deposition possibility of the back metal electrode is reduced; on the other hand, the electroplated nickel / copper / tin composite electrode replaces a silver electrode, has the advantages of being better in morphology, lower in bulk resistivity, higher in conductivity, higher in capability of collecting photon-generated carriers, capable of saving silver paste cost and the like, and can form better ohmic contact, reduce contact resistivity and improve photoelectric conversion efficiency; the hydrogen / phosphorus doped polycrystalline silicon has good passivation performance at the same time, the structure is optimized, and the cost is reduced.

The invention discloses a rapid preparation process of a novel nano material. The rapid preparation process comprises the following steps: step 1, pretreating raw materials; 2, mixing and pipe sealing; step 3, gradient temperature rise; the preparation method has the advantages that by optimizing the raw material combination, the reaction time is greatly shortened, the preparation efficiency is remarkably improved, meanwhile, the conductivity of FePSe3 is greatly improved through introduced carbon doping, the overpotential of the oxygen evolution reaction is successfully reduced to 524 mV at 100 mAcm <-2 > and is reduced by 23% compared with pure FePSe3 (677 mV), and the material can be used for preparing the high-current-density composite material under the industrial-grade high-current density, such as gt; the overpotential growth rate of 100mAcm <-2 > is remarkably lower than that of pure FePSe3, the energy consumption and equipment cost of hydrogen production by electrolysis of water can be greatly reduced, efficient synthesis of FePSe3 and innovative application of FePSe3 in OER are realized through raw material optimization and process improvement, the method has remarkable technical progress and commercial value, and the method is simple in process, low in energy consumption and suitable for industrial production. And a new way is provided for large-scale preparation of the high-performance OER catalyst.

The invention discloses a resistance heat preparation method of a high-performance carbon-doped MgB2 superconducting block material. The method comprises the following steps: 1, mixing Mg powder and carbon-coated B powder, and grinding until the Mg powder and the carbon-coated B powder are uniformly mixed; 2, loading the uniformly mixed powder into a tabletting mold, and maintaining the pressure to obtain a precursor powder block; and 3, clamping the precursor powder block between two layers of carbon foils, placing the carbon foils in direct-current resistance heat treatment equipment, adjusting the access current applied to the two ends of the carbon foils to adjust the heating rate so as to realize rapid heating, sintering and preserving heat in an argon atmosphere, and then rapidly cooling and taking out the carbon foils. The Mg powder and the amorphous-form doped B powder are used as precursor powder, the precursor powder is wrapped in the carbon foil for resistance heat treatment after being blended and tabletted, the heating rate is regulated and controlled by adjusting the current accessed to the carbon foil, top-speed heating and cooling are achieved, the high-performance carbon-doped MgB2 superconducting block is generated through reaction within a short time, the preparation process is simple, energy consumption is low, and the method is suitable for industrial production. The method is suitable for low-cost and industrial preparation of high-performance MgB2 blocks.

The application discloses a silver-carbon composite coating carbon doping amount nondestructive detection method, device, equipment, medium and product, relates to the field of nondestructive detection technology and material characterization, and the method comprises the following steps: obtaining the reflection signal of each measuring point on the silver-carbon composite coating sample to terahertz waves; constructing a basic reflection signal model of terahertz waves at the air-coating interface based on the Fresnel reflection law; performing surface roughness correction and dispersion effect compensation on the basic reflection signal model of terahertz waves at the air-coating interface to obtain a terahertz analytical model; taking the minimum of the fitness function as the target, inversing the terahertz analytical model by using a teach-and-learn optimization algorithm according to the reflection signal of the measuring point on the silver-carbon composite coating sample to terahertz waves, and obtaining the refractive index; and qualitatively evaluating or uniformly evaluating the carbon doping amount according to the refractive index, so that the application can realize rapid nondestructive detection of the carbon doping amount of the silver-carbon composite coating.

A preparation method of a carbon-coated nickel-nitrogen functionalized carbon-doped titanium nitride monolithic electrode. The pretreated carbon cloth is used to prepare a titanium dioxide seed layer substrate through a titanium tetrachloride chemical bath method and high-temperature calcination; titanium isopropoxide solution is added, and after high-temperature hydrothermal treatment and high-temperature calcination, titanium dioxide nanorods are obtained; using the titanium dioxide nanorod substrate as a working electrode, a polyaniline film is deposited on the surface through cyclic voltammetry electrodeposition; and a nickel hydroxide film is prepared through constant current electrodeposition; a mixed solution of resorcinol and hexamethylenetetramine is added, and after high-temperature hydrothermal reaction, it is calcined at high temperature in an ammonia atmosphere to obtain the carbon-coated nickel-nitrogen functionalized carbon-doped titanium nitride monolithic electrode. This electrode has the advantages of simple preparation process, excellent capacitance contribution, and high heavy metal ion removal efficiency, etc., and can be applied to the efficient removal of low-concentration heavy metal ions in industrial wastewater, providing a new way for realizing high-performance and low-cost TiN-based CDI heavy metal wastewater purification technology.

The invention discloses a carbon-doped pearlescent pigment and a preparation method thereof, and belongs to the technical field of pigments. According to the pearlescent pigment, natural mica, synthetic mica, glass flakes or aluminum oxide sheets serve as a base material, organic metal salt serves as a precursor of a metal oxide thin film, the surface of the base material is coated with a layer of metal oxide thin film, the precursor is the organic metal salt, organic components exist in the coated metal oxide layer, and after the metal oxide layer is calcined in an air-isolated mode, the pearlescent pigment is obtained. And organic components in the metal oxide layer are carbonized, so that carbon doping is realized. According to the pearlescent pigment, through doping of carbon, the absorbance of the pearlescent pigment is improved, and when light irradiates the surface of the pearlescent pigment, transmitted light is reduced, so that high saturation is realized, and the color of the pearlescent pigment is not influenced.

This invention discloses a method for preparing a co-doped titanium dioxide photocatalyst for water splitting to produce hydrogen, and the product obtained therefrom. The method uses TiCl4 and magnesium nitride as raw materials, and adjusts the nitrogen content... 3‑ / Ti 4+ By adjusting the molar ratio and adding carbon doping, a co-doped MgCO3 / C-N-TiO2 nano-titanium oxide photocatalyst was formed, which effectively improved the photocatalytic hydrogen production performance of TiO2. Under irradiation with a 300W xenon lamp, the hydrogen evolution performance reached 2-3 mmol / gh. This provides a new approach for the preparation of co-doped anatase titanium oxide photocatalysts and can well meet the industrial demand for photocatalytic hydrogen production from titanium oxide materials.

The invention relates to a Mn-Fe-Cu-Ga alloy carbide negative thermal expansion material and a preparation method thereof. The chemical formula of the material is Mn < 50 > Fe < 25-x > Cu < x > Ga < 25 > C < y >, wherein x is larger than or equal to 7.5 and smaller than or equal to 15, y is larger than or equal to 2.5 and smaller than or equal to 5, and x and y represent the atomic ratio of Cu and C in the chemical formula; the form of the negative thermal expansion material is a polycrystalline ribbon material or a polycrystalline rod-like material. During preparation, the negative thermal expansion material with accurate carbon content and uniform components can be synthesized directly through electric arc melting and subsequent rapid quenching or suction casting, and the preparation method is suitable for large-scale industrial production. The material obtained by the method has the advantages of low carbon doping amount and simple and convenient preparation process, the negative thermal expansion temperature range of the material prepared by the method is mainly in the range of 300K-385K, the common working temperature range of devices and equipment is covered, and meanwhile, the material has good mechanical properties and can meet the processing and use requirements of precise devices.

The present invention provides a high-pressure wafer processing using a dual high-pressure wafer method processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.

The embodiment of the utility model provides a P-type heterojunction cell and a photovoltaic assembly, and relates to the technical field of solar cells. The P-type heterojunction cell comprises a silicon wafer, a first passivation layer, a doping layer, a tunneling layer, an amorphous silicon thin film layer and a second passivation layer, wherein the first passivation layer, the doping layer and the tunneling layer are arranged on the front face of the silicon wafer, the amorphous silicon thin film layer and the second passivation layer are arranged on the back face of the silicon wafer, the doping layer is a carbon-doped polycrystalline silicon layer, and the tunneling layer is a silicon oxide layer. The doping layer is made of a carbon-doped polycrystalline silicon material, the tunneling layer is made of silicon oxide and doped carbon, so that the forbidden bandwidth of polycrystalline silicon can be increased, the filling efficiency is improved, the energy consumption of the polycrystalline silicon in the production process is lower than that of microcrystalline silicon in the prior art, and the manufacturing process of the polycrystalline silicon is simpler than that of the microcrystalline silicon. And the production cost is reduced. According to the P-type heterojunction battery, the production cost can be reduced under the condition of ensuring the conversion efficiency.

The present invention belongs to the technical field of ceramic materials, and particularly relates to a dielectric ceramic material capable of reducing the sintering temperature of MLCC and a preparation method thereof. By modifying the main crystal phase magnesium titanate and introducing components such as carbon-doped titanium dioxide, strontium zirconium titanate, yttrium-modified alumina and lanthanum oxide composite material, the present invention prepares a dielectric ceramic material capable of reducing the sintering temperature of MLCC. The multi-component synergistic effect reduces the dielectric loss of the dielectric ceramic material, obtains a good temperature coefficient, and reduces the sintering temperature of MLCC through a high specific surface area.

The application is a preparation method and application of a silicon monoxide-carbon composite material with a three-dimensional ordered macroporous structure. The method uses organosilane as a silicon source, and the organosilane has an organic unit. After experiencing sol-gel and heat treatment, a uniform carbon doping is realized in the final product 3DOM SiO x The structure is combined with chemical vapor deposition to perform uniform carbon coating. The obtained product has a structure similar to a "honeycomb" and a regular ordered macropore. The preparation process is simple, and the product has high repeatability, high capacity, coulomb efficiency and stability. When used as an electrode material of a lithium ion battery, the honeycomb 3DOM structure and the synergistic effect of the carbon combination make the product have excellent electrochemical performance, and show great potential and application value in promoting three-dimensional nanostructure engineering.

Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude. As such, trenches with high aspect ratio separate features, such that each feature includes the multi-layered epitaxial stack containing the MDI film disposed between the top and bottom FET modules.