191 results about "Carbon ion" patented technology

Semiconductor devices and methods for fabricating semiconductor devices are provided. One exemplary method comprises providing a silicon-comprising substrate having a first surface, etching a recess into the first surface, the recess having a side surface and a bottom surface, implanting carbon ions into the side surface and the bottom surface, and forming an impurity-doped, silicon-comprising region overlying the side surface and the bottom surface.

A method of using ion implantation techniques to create graphene is disclosed. Carbon ions are implanted in a substrate, such as a metal foil, using a plasma doping system or a beam line implanter. The implant is performed at an elevated temperature, to allow a large number of carbon ions to be absorbed by the foil. As the temperature is reduced, the excessive number of carbon atoms causes the foil to be saturated, and the carbon atoms diffuse to the surface, thereby producing graphene. In another embodiment, a plasma doping system is used, where a plasma containing carbon and other species is created. These additional species are also implanted, thereby causing the diffused atoms to contain both carbon and the additional species.

There is provided a method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film (e.g., of or including zinc oxide) thereon. In certain example embodiments, the protective film may be ion beam treated with at least carbon ions. It has been found that the ion beam treatment improves the shelf-life of the product prior to HT. Following and/or during heat treatment (e.g., thermal tempering, or the like), the protective film may be removed.

A method and apparatus for vacuum arc deposition of carbon on a substrate inhibits or eliminates emission of contaminating carbon particles in the ion plasma by maintaining an elevated local plasma pressure at the cathode or target surface, thereby minimizing the role of heat conduction in the creation of the particles and strongly increasing the electron emission cooling effects.

The invention provides a novel method for preparing an amorphous tetrahedral carbon composite coating on the surface of hard alloy material and high-speed steel material. The method comprises substrate pretreatment, ion cleaning, plating of CrTiAlN intermediate coating, arc discharge and carbon ion deposition. The amorphous tetrahedral carbon film composite coating prepared through the method has the advantages that the bonding strength is high, rigidity is high, the friction coefficient is small, the coating is thin, the toughness is excellent, the coating is very suitable for knives and gauges such as screw taps, reamers, plug gauges and the like having strict requirements on dimensions, the content of SP3 bond structure in the coating is more than or equal to 85 percent, the rigidity is more than or equal to 85GPa, the friction coefficient is less than or equal to 0.15 and the bonding strength between the film and the substrate is more than or equal to 35N; and compared with the DLC prepared through the traditional technology, the friction coefficient is smaller, the rigidity is higher, the service life is improved by more than six times and the coating is very suitable for being selected and used at present.

A novel method and system of separating carbon dioxide from flue gas is introduced. Instead of relying on large temperature or pressure changes to remove carbon dioxide from a solvent used to absorb it from flue gas, the ion pump method, as disclosed herein, dramatically increases the concentration of dissolved carbonate ion in solution. This increases the overlying vapor pressure of carbon dioxide gas, permitting carbon dioxide to be removed from the downstream side of the ion pump as a pure gas. The ion pumping may be obtained from reverse osmosis, electrodialysis, thermal desalination methods, or an ion pump system having an oscillating flow in synchronization with an induced electric field.

The invention provides a graphene preparation method without substrate transferring. According to the graphene preparation method, a catalytic metal layer is deposited on a substrate; then, carbon ions are injected into the catalytic metal layer to form a carbon-atom-saturated face by using an ion implantation technology, and the carbon-atom-saturated face can be located at a position close to the substrate and a catalytic metal layer interface through controlling injected energy; then, the substrate is subjected to high-temperature annealing, carbon-atom layers, i.e. graphene films, are precipitated on the catalytic metal layer and a substrate interface; and finally, the catalytic metal layer is removed, and thus the graphene films are prepared on the substrate. The graphene preparation method without the substrate transferring has the advantages that the processing steps for preparing graphene are simplified, the graphene can be directly prepared on any substrate without transferring, the damage and the pollution to the structure of the graphene cannot be accordingly caused, and the graphene with high quality can be directly applied to a desired substrate, so that the preparation method can faster promote the wide application of the graphene in different fields.

The present invention relates to a method of forming a graphene layer, and, more particularly, to a method of forming a graphene layer which is a two-dimensional thin film composed of carbon atoms arranged in a honeycomb-style lattice and having one atom thick and which is put to practical use in the field of electric devices, transparent electrodes or microwave circuits. The method includes the steps of: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. The method is advantageous in that a graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film.

This invention relates to adaptive resistance inhibiting 100 to 10,000 Gy, single fraction proton and carbon ion microbeam and nanobeam radiosurgery, proton spray chemotherapy and proton spray gadolinium and boron neutron capture therapy with least normal tissue toxicity. Secondary neutrons, protons, ions and radiation from the accelerator and the patient specific collimator are removed with tissue equivalent collimator that also generates proton and carbon ion microbeam and nanobeam. Laser interaction with micrometer and nanometer thick metallic and diamond like carbon targets are also used for proton and carbon ion beam generation. Polyenergetic proton beam is spatially separated. Ion beam and Laser ion beam is accelerated in a hybrid RF accelerator. It is split into microbeam and nanobeam. Secondary neutrons, protons and gamma radiation are removed with tissue equivalent collimators that also generate microbeams and nanobeams. Adaptive resistance to cancer treatment is inhibited by dual target radiation, DNA strands break and enzymes inactivation.

A method of manufacturing carbon nanostructures that allows carbon nanostructures having more uniform shape to be produced in high purity and in a stable manner is provided. The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by means of vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.

The invention discloses a preparation method of a nano complex diamond-like coating layer. The method utilizes the cathode arc discharge controlled by a magnetic field, and excessive ethyne gas is introduced to the front of a metal target, and a metal carbide layer is formed on the target surface, metal carbide can be steamed from the target surface while the arc moves; furthermore, under the function of an auxiliary magnetic field, the front of the arc target utilizes the arc discharge to generate strong plasma ionized ethyne gas, and generate high ionized carbon ions; under the function of bias, the metal carbide steamed from the target surface and carbon ions generated by ethyne form a carbide doped nano complex diamond-like coating layer. The diamond-like coating layer prepared by the invention has the advantages of high coating hardness, strong adhesive force, high coating growing speed and production efficiency, low production cost and simple equipment structure, etc.; the invention can be applied to preparing the diamond-like coating layer of different thickness on all kinds of workpieces such as hard alloy, high speed steel, stainless steel, carbon steel, die steel, etc. according to different using requirements.

A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion beam source(s) is used to implant at least carbon ions into the titanium oxide. When implanting, the carbon ions have sufficient ion energy so as to knock off oxygen (O) from TiO_x molecules so as to enable a substantially continuous layer comprising titanium oxycarbide to form near a surface of the previously sputtered layer.

The invention discloses a method for preparing diamond-like carbon film (DLC), belonging to the metal or non-metal surface modification treatment technical field. The method adopts pulsed arc discharge by using graphite as a cathode electrode and a physically and chemically combined vapor deposition method for the decomposition and ionization of hydrocarbons gas to produce DLC deposition on a surface of a workpiece. The invention comprises the main operation steps of ultrasonic cleaning, vacuumizing, ion cleaning and DLC deposition, wherein argon gas is passed through in the ion cleaning step; a pulse frequency of the arc discharge in the DLC deposition step is 5 and 35Hz with voltage of between 200 and 400V; methane, ethane or propane are preferred as the hydrocarbons gas. A high-speed and high-energy carbon plasma ion beam is formed to generate collide decomposition and ionization to the passed through hydrocarbons gas through specific pulsed arc discharge to increase increasing density of the carbon ion and diffraction performance, thereby improving deposition speed and adhesive force of DLC, reducing internal stress, and improving precision and performance of DLC.

The invention discloses a method for preparing an amorphous carbon coating on the surface of a medical stainless steel knife saw. The method includes the following steps: preprocessing, ion cleaning, electric arc discharging, and carbon ion depositing. An amorphous tetrahedral carbon film prepared by the method has the characteristics of high bonding strength, excellent biological property and good corrosion resisting performance; after a salt fog test for 48 hours, no corrosion spot is incurred on the amorphous tetrahedral carbon film. After the surfaces of resin, stainless steel and the like are coated, the corrosion and abrasion resisting properties are greatly enhanced, the anti-ageing function is obvious, and the service life is greatly prolonged. After the above surfaces are coated, material bacteria cannot be adhered, so as to solve the cleaning problem of an oral cavity after artificial teeth are installed, thereby being beneficial for the health of the oral cavity. After the above surfaces are coated, the growth of cells on the surfaces is in good condition, and the cell density is higher; moreover, the thicker the film, the better the growth of the cells. The coating stainless steel knife saw prepared by the method in the invention has the following characteristics: the rigidity of the knife saw can be up to more than 85GPa, the content of an SP3 bond structure of a coating is equal to or higher than 85%, the friction coefficient is within 0.08 to 0.15, and the binding force between the film and a basal body is within 35 to 45N.

The invention discloses a hard resin lens and organic glass lens surface ultra-hard coat coating method, which comprises the following steps that: an amorphous tetrahedral carbon film is formed on the surface of the lens through pretreatment, glow discharge cleaning, electric arc discharge and carbon ion precipitation, the film has good light transmission and good corrosion resistance, the abrasion resistance of the coated lens is remarkably improved compared with that of the non-coated lens, the coherence force between the amorphous tetrahedral carbon film and the resin and organic glass substrate is strong, the film is difficult to drop of, and the ultraviolet light test indicates that the ultraviolet transmission rate can be effectively reduced by the coat; and the hardness of the coated lens which is prepared with the method can reach more than 85 GPa, the SP3 key structure content in the coat is more than or equal to 85 percent, the friction coefficient is small, the abrasion resistant time is long, and the abrasion resistance is greatly improved.

A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions.

A method for producing carbon nanostructures according to the invention includes injecting acetylene gas into a reactant liquid. The injected acetylene molecules are then maintained in contact with the reactant liquid for a period of time sufficient to break the carbon-hydrogen bonds in at least some of the acetylene molecules, and place the liberated carbon ions in an excited state. This preferred method further includes enabling the liberated carbon ions in the excited state to traverse a surface of the reactant liquid and enter a collection area. Collection surfaces are provided in the collection area to collect carbon nanostructures.