44results about How to "Good electric characteristic" patented technology

The semiconductor device fabrication method comprising the step of forming a gate electrode on a semiconductor substrate; the step of forming a source / drain diffused layer in the semiconductor substrate on both sides of the gate electrode; the step of burying a silicon germanium layer in the source / drain diffused layer; the step of forming an amorphous layer at an upper part of the silicon germanium layer; the step of forming a nickel film on the amorphous layer; and the step of making thermal processing to react the nickel film and the amorphous layer with each other to form a silicide film on the silicon germanium layer.

The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.

A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.

In a method for fabricating a surface mountable chip inductor, a spiral coil pattern is formed on a surface of a cylindrical body fabricated by mixing ferrite or ceramic powder with thermoplastic organic binder, the cylindrical body is transformed into a square-shaped body by being inserted into a square-shaped mold and pressure being applied at a certain temperature. An electric characteristic lowering problem can be prevented by forming the coil on the cylindrical body, and transforming the cylindrical body into a square-shaped body to improve surface mounting.

An amplifier comprises an amplifier circuit which comprises a first inductor as an impedance element for degeneration, and a control circuit which has a second inductor electro-magnetically connected to the first inductor, and changes a control current flowing through the second inductor to change an inductance value of the first inductor, thereby changing amplification characteristics of the amplifier circuit.

According to the present invention, a titanyl phthalocyanin crystal excellent in storage stability in organic solvents, a method for preparing the same and an electrophotographic photoconductor using the same are provided. In the titanyl phthalocyanin crystal, the method for preparing such a titanyl phthalocyanin crystal and the electrophotographic photoconductor using the same, the titanyl phthalocyanin crystal is characterized by having the maximum peak at a Bragg angle 2 θ±0.2°=27.2° in a CuKα characteristic X-ray diffraction spectrum and one peak within the range of 270 to 400° C. other than a peak accompanied by the vaporization of adsorbed water in a differential scanning calorimetric analysis.

The number of steps is reduced in the formation process of an electrode. Deterioration of the electrode is suppressed. A highly reliable lithium secondary battery is provided by suppressing the deterioration of the electrode. A method for forming a negative electrode and a method for manufacturing a lithium secondary battery including the negative electrode are provided. In the method for forming the negative electrode, graphene oxide, a plurality of particulate negative electrode active materials, and a precursor of polyimide are mixed to form slurry; the slurry is applied over a negative electrode current collector; and the slurry applied over the negative electrode current collector is heated at a temperature higher than or equal to 200° C. and lower than or equal to 400° C. so that the precursor of the polyimide is imidized. The graphene oxide is reduced in heating the slurry to imidize the precursor of the polyimide.