5269 results about "Ruthenium" patented technology

A process for the selective production of ethylene by vapor phase reaction of acetic acid over a hydrogenating catalyst composition to form ethylene in a single reaction zone is disclosed and claimed. In an embodiment of this invention reaction of acetic acid and hydrogen over either a copper supported on iron oxide, copper-aluminum catalyst, cobalt supported on H-ZSM-5, ruthenium-cobalt supported on silica or cobalt supported on carbon selectively produces ethylene in a vapor phase at a temperature in the range of about 250° C. to 350° C.

Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

A ruthenium film deposition method is disclosed. In one embodiment of the method, a first ruthenium film is deposited by using a PEALD process until a substrate is substantially entirely covered with the first ruthenium film. Then, a second ruthenium film is deposited on the first ruthenium film by using a thermal ALD process having a higher deposition speed than that of the PEALD process. In the method, a ruthenium metal film having a high density is formed in a short time by combining a PEALD process of depositing a ruthenium film at a low deposition speed and a deposition process of depositing a ruthenium film at a higher deposition speed. Accordingly, it is possible to form a ruthenium film having high density, a smooth surface, good adhesiveness, and a short incubation period. Therefore, according to the embodiment, in comparison to cases of using only a PEALD process or an ALD process that has a long incubation period, it is possible to obtain a ruthenium film having a large thickness and a high density in the same time interval. As a result, the ruthenium film formed by the ruthenium film deposition method according to the embodiment is more suitable for electrode structures of semiconductor devices than the ruthenium films formed by using conventional methods.

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

A method for preparation of alcohols by catalytic hydrogenation of carbonyl compounds with hydrogen or hydrogen-containing gases in the presence of a hydrogenation catalyst of Raney type, where the catalyst is used in the form of hollow bodies, Preferred as catalytically active components are nickel, cobalt, copper, iron, platinum, palladium or ruthenium.

In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.

An implantable medical device includes a structural body made from a superelastic material and includes one or more marker holders integrally formed on the structural body. Each marker holder is designed to hold a radiopaque marker which has a level of radiopacity greater than the superelastic material. The radiopaque marker can be made from a nickel-titanium alloy which includes a ternary element. The ternary element can be selected from the group of elements consisting of iridium, platinum, gold, rhenium, tungsten, palladium, rhodium, tantalum, silver, ruthenium, and hafnium. In one form, the marker holder includes a pair of projecting fingers connected together at a notched region to cooperatively create a particular-shaped opening. This opening, in turn, is adapted to receive a similarly shaped portion formed on the radiopaque marker. In one form, the radiopaque marker includes an inner core which is partially, or completely, encased by an outer layer. This inner core can be made from a highly radiopaque material while the outer layer is formed from a material that is easier to weld to the marker.

A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films.

Embodiments of the invention provide a method for depositing a copper material on a substrate by an electroless deposition process and also provide a composition of an electroless deposition solution. In one embodiment, the copper material is deposited from an electroless copper solution that contains an additive, such as an inhibitor, to promote a bottom-up fill process. In one aspect, the field of the substrate may be maintained free of copper material or substantially free of copper material during the electroless deposition process. Prior to the electroless deposition process for forming the copper material, a barrier layer may be deposited on the substrate, and thereafter, a ruthenium layer may be deposited thereon. In one example, the copper material is formed during a bottom-up, electroless deposition process directly on the ruthenium layer. Alternatively, a seed layer may be formed on the ruthenium layer prior to depositing the copper material.

Panchromatic photosensitizers having a Formula of ML₁L₂X were synthesized, wherein M comprises ruthenium atom; X is a monodentate anion; L₁ is heterocyclic bidentate ligand having one of formulae listed below:

The substituents R₁, R₂, R₃, R₄, R₅, R₆, R₇ of L₁ and L₂ are the same or different, and represent alkyl, alkoxy, alkylthio, alkylamino, halogenated alkyl, phenyl or substituted phenyl group, carboxylic acid or counter anion thereof, sulfonic acid or counter anion thereof, phosphoric acid or counter anion thereof, amino-group, halogens, or hydrogen. The above-mentioned photosensitizers are suitable to use as sensitizers for fabrication of high efficiency dye-sensitized solar cell.

A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

The invention provides a method for converting a less active or slower to initiate system to a higher activity system so that at the end of a polymerization the most active species is present in the system. The invention generally relates to a process for converting a less active or slower to initiate catalyst system to a higher activity catalyst system wherein the process comprises contacting a protected N-heterocyclic carbene with a metathesis catalyst and an olefin in the presence of energy. One of the benefits of the invention is that the amount of catalyst required is less than or lowered in the presence of the protected N-heterocyclic carbene as compared to the amount of catalyst required in the absence of the protected N-heterocyclic carbene. The protected N-heterocyclic carbene can be unsaturated or saturated. In addition, the invention describes novel ruthenium initiators and methods of making the same.

Chelating ligand precursors for the preparation of olefin metathesis catalysts are disclosed. The resulting catalysts are air stable monomeric species capable of promoting various metathesis reactions efficiently, which can be recovered from the reaction mixture and reused. Internal olefin compounds, specifically beta-substituted styrenes, are used as ligand precursors. Compared to terminal olefin compounds such as unsubstituted styrenes, the beta-substituted styrenes are easier and less costly to prepare, and more stable since they are less prone to spontaneous polymerization. Methods of preparing chelating-carbene metathesis catalysts without the use of CuCl are disclosed. This eliminates the need for CuCl by replacing it with organic acids, mineral acids, mild oxidants or even water, resulting in high yields of Hoveyda-type metathesis catalysts. The invention provides an efficient method for preparing chelating-carbene metathesis catalysts by reacting a suitable ruthenium complex in high concentrations of the ligand precursors followed by crystallization from an organic solvent.

A platinum/ruthenium alloy catalyst that includes finely dispersed alloy particles on a powdery, electrically conductive carrier material. The catalyst is particularly resistant to carbon monoxide poisoning when the alloy particles display mean crystallite sizes of 0.5 to less than 2 nm.

A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.

A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

Disclosed are: a catalyst which can exhibit an excellent catalytic activity and excellent durability for a long period in the wet oxidation treatment of waste water; a wet oxidation treatment method for waste water using the catalyst; and a novel method for treating waste water containing a nitrogenated compound, in which a catalyst to be used has a lower catalytic cost, the waste water containing the nitrogenated compound can be treated at high purification performance, and the high purification performance can be maintained. The catalyst for use in the treatment of waste water comprises an oxide of at least one element selected from the group consisting of iron, titanium, silicon, aluminum, zirconium and cerium as a component (A) and at least one element selected from the group consisting of silver, gold, platinum, palladium, rhodium, ruthenium and iridium as a component (B), wherein at least 70 mass% of the component (B) is present in a region positioned within 1000 [mu]m from the outer surface of the component (A) (i.e., the oxide), the component (B) has an average particle diameter of 0.5 to 20 nm, and the solid acid content in the component (A) (i.e., the oxide) is 0.20 mmol/g or more. The waste water treatment method uses a catalyst (a pre-catalyst) which is placed on an upstream side of the direction of the flow of the waste water and can convert the nitrogenated compound contained in the waste water into ammoniacal nitrogen in the presence of an oxidizing agent at a temperature of not lower than 100 DEG C and lower than 370 DEG C under a pressure at which the waste water can remain in a liquid state and a downstream-side catalyst (a post-catalyst) which is placed downstream of the direction of the flow of the waste water and can treat the waste water containing ammoniacal nitrogen.

A method for fabricating a Ru thin layer by using an atomic layer deposition (ALD) technique is disclosed. The method comprises the steps of loading a substrate into a reaction chamber for an atomic layer deposition, adsorbing RuXn (wherein n is 2 or 3), which is a Ru precursor, onto the substrate and injecting a reductive reaction gas into the reaction chamber.

Photosensitizers having a formula of RuL₁L₂ (1) are provided, wherein Ru is ruthenium; L₁ and L₂ are heterocyclic tridentate ligands. L₁ has a formula of (2), and L₂ has a formula of G₁G₂G₃ (3), wherein G₁ and G₃ are selected from the group consisting of formulae (4) to (7), and G₂ is selected from the group consisting of formulae (7) and (8). The above-mentioned photosensitizers are suitable to be used as sensitizers for fabrication of high efficiency dye-sensitized solar cells.