1563 results about "Refractory metals" patented technology

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation resistive layer. A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.

A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

A method for forming a damascene with improved electrical properties and resulting structure thereof including providing at least one dielectric insulating layer overlying a first etch stop layer; forming an anti-reflectance coating (ARC) layer prior to a photolithographic patterning process; forming at least one opening extending through a thickness portion of the at least one dielectric insulating layer and first etch stop layer according to said photolithographic patterning and an etching process; blanket depositing a barrier layer including material selected from the group consisting of silicon carbide and silicon oxycarbide to line the at least one opening; blanket depositing a refractory metal liner over the barrier layer; blanket depositing at least one metal layer to fill the at least one opening; and, removing at least the at least one metal layer overlying the at least one opening level according to a chemical mechanical polish (CMP) process.

The invention discloses a two-dimensional fiber cloth reinforced ceramics based composite material and the preparation technique, which adopts the two-dimensional fiber cloth as the reinforcing phase and the ceramic powder or the refractory metal powder as the stuffing, and the carbon and the carborundum as the base. The process steps are following: first the sizing agent with different ceramic powder and metal powder is coated on the two-dimensional fiber cloth, and then overlapping, puncturing and repeated densification are carried out. The preparation method has the advantages of lowering preparation cost and shortening preparation cycle, and the two-dimensional fiber cloth reinforced ceramics based composite material has the advantages of high shear strength between layers, structural stability and high reliability. The types of fiber cloth and the base can be adjusted and optimized in a wider range according to the applications, so as to be applicable for different fields.

Provided is an emissions treatment system for an exhaust stream, having a NOx storage reduction (NSR) catalyst with a NOx sorbent at a concentration of at least 0.1 g/in³ and a platinum group metal component dispersed on a refractory metal oxide support; and, an SCR catalyst disposed downstream of the NSR catalyst. The emissions treatment system is advantageously used for the treatment of exhaust streams from diesel engines and lean burn gasoline engines.

The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor compounds and ethers.

There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.

A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH₃ or B₂H₆, followed by introduction of a tungsten containing compound, such as WF₆, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF₆ at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH₃ or B₂H₆, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques. Alternatively, the formed tungsten layer can be used to fill an aperture.

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.

Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.

A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.