240results about How to "High process yield" patented technology

An optical interference display unit, at least comprises a light-incidence electrode and a light-reflection electrode located on a transparent substrate. The light-incidence electrode at least comprises a transparent conductive layer and a dielectric layer. The light-reflection electrode at least comprises an absorption layer and a reflective layer.

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH4 to WF6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

This invention relates to a semiconductor device having a beam made of a semiconductor to which strain is introduced by deflection, and a current is permitted to flow in the beam.

A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Disclosed are high purity synthetic silica material having an internal transmission at 193 nm of at least 99.65% / cm and method of preparing such material. The material is also featured by a high compositional homogeneity in a plane transverse to the intended optical axis. The soot-to-glass process for making the material includes a step of consolidating the soot preform in the presence of H2O and / or O2.

Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

The present invention relates to a high yield process to prepare high purity crystalline glycolic acid using a multi-loop crystallization process characterized by high liquid and / or solid recycle, said process suitable for large scale purification and producing high purity glycolic acid with low diglycolic acid content.

A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

A touch sensing color filter including a substrate, a black matrix, a color filter layer and a second sensing electrode layer is provided. The black matrix is disposed on the substrate to define a plurality of sub-pixel areas. The black matrix includes a first sensing electrode layer, and the first sensing electrode layer has a plurality of openings corresponding to the sub-pixel areas. The color filter layer includes a plurality of color filter units disposed in the sub-pixel areas respectively. The second sensing electrode layer is disposed on the substrate, and the second sensing electrode layer includes a plurality of sub patterns corresponding to the sub-pixel areas. A method for fabricating the touch sensing color filter and a display panel using the same are further provided.