5results about How to "Increased process complexity" patented technology

The invention provides an image sensor and a manufacturing method thereof, and belongs to the technical field of semiconductors. The image sensor comprises a pixel region and a grounding region or comprises the pixel region, the grounding region and a silicon through hole region, and the image sensor at least comprises an epitaxial layer, and a trench isolation structure and a photodiode are arranged in the epitaxial layer of the pixel region; the conductive isolation ring is arranged in the epitaxial layer, surrounds the trench isolation structure and the photodiode, and is connected to a silicon through hole contact of the silicon through hole region or a grounding layer of the grounding region; negative voltage is provided for the conductive isolating ring through contact of the silicon through hole or the grounding layer; the grating is arranged at the top of the groove isolation structure; and the light filtering structure is arranged at the top of the photodiode. According to the image sensor and the manufacturing method thereof provided by the invention, effective isolation of the pixel region can be realized.

The present disclosure relates to a plasma processing system for VHF plasma processing using a transmission antenna designed to achieve a resonant VHF standing wave inside a plasma processing chamber for manufacturing semiconductor devices. The system includes a transmission element capable of electromagnetically coupling to an incoming power line connected to a power source. The transmission element, the power transmission line, and the power source form a resonant circuit capable of achieving a VHF standing wave on the transmission element. The transmission element folds back onto itself to reduce the footprint of the antenna so that the (multiple) transmission elements can be located inside the plasma processing chamber. The transmission antenna has three parts, wherein a first part is electromagnetically coupled to the power transmission line, a second part is coupled to the plasma, and a third part is a folded part that reduces the footprint of the transmission element.

The invention discloses an interlayer supporting structure for a high-vacuum heat insulation tank, the high-vacuum heat insulation tank comprises a shell and an inner container, the shell and the inner container form an interlayer, the axial front end of the interlayer is provided with four sliding ends, and the axial rear end of the interlayer is provided with four fixed ends; the fixed end comprises a shell supporting cover connected with the inner wall of the shell and an inner container supporting cover connected with the outer wall of the inner container, the shell supporting cover and the inner container supporting cover are oppositely arranged, do not make contact with each other and form a first cavity, and a composite supporting piece is arranged in the first cavity. The structure of the fixed end is optimized, a plurality of layers of stacked glass fiber reinforced plastic pieces are adopted to prolong a heat conduction path and increase contact heat resistance, the embedded stainless steel reinforcing pieces are adopted to replace the glass fiber reinforced plastic pieces to bear shear loads, and the bearing capacity of the structure is improved on the premise that the heat insulation performance is not affected; the technical problems that in the prior art, the heat insulation requirement cannot be met at the same time, and the bearing requirement can not be met without additionally arranging an auxiliary device are solved.

This invention discloses a low-voltage, high-brightness, reverse-polarity red LED chip and its fabrication method. The chip includes a Si support substrate, an epitaxial stack disposed on the Si support substrate, a P-side electrode disposed on the P-type side of the epitaxial stack, and an N-side electrode disposed on the N-type side of the epitaxial stack. The P-side electrode includes multiple semi-circular electrode units, each having a straight edge and a rounded edge. The semi-circular electrode units are positioned close to the projection area of ​​the N-side electrode in the chip plane direction. The straight edges of the semi-circular electrode units form linear or planar current injection boundaries. This invention enables the current to extend laterally from the linear or planar current injection boundaries formed by the straight edges of the semi-circular electrode units towards the chip plane, reducing current spreading resistance, improving current distribution uniformity, and reducing the electrode shading area, thereby achieving low operating voltage and high light output.

The invention provides a packaging structure and a forming method thereof. The packaging structure comprises a condensation rewiring layer, and a vertical interconnection structure, a silicon bridge chip and a condensation flow pipe are arranged in the condensation rewiring layer. Cooling liquid can be introduced into the packaging structure through the condensation flow pipe, heat conduction is conducted through the cooling liquid in the condensation flow pipe, the heat dissipation efficiency of the packaging structure can be effectively improved, and the heat dissipation problem of a high-performance large-power-consumption chip is solved; meanwhile, the technological process is effectively simplified, and the manufacturing cost is saved.