2results about How to "Increased process complexity" patented technology

The invention provides an image sensor and a manufacturing method thereof, and belongs to the technical field of semiconductors. The image sensor comprises a pixel region and a grounding region or comprises the pixel region, the grounding region and a silicon through hole region, and the image sensor at least comprises an epitaxial layer, and a trench isolation structure and a photodiode are arranged in the epitaxial layer of the pixel region; the conductive isolation ring is arranged in the epitaxial layer, surrounds the trench isolation structure and the photodiode, and is connected to a silicon through hole contact of the silicon through hole region or a grounding layer of the grounding region; negative voltage is provided for the conductive isolating ring through contact of the silicon through hole or the grounding layer; the grating is arranged at the top of the groove isolation structure; and the light filtering structure is arranged at the top of the photodiode. According to the image sensor and the manufacturing method thereof provided by the invention, effective isolation of the pixel region can be realized.

This invention discloses a low-voltage, high-brightness, reverse-polarity red LED chip and its fabrication method. The chip includes a Si support substrate, an epitaxial stack disposed on the Si support substrate, a P-side electrode disposed on the P-type side of the epitaxial stack, and an N-side electrode disposed on the N-type side of the epitaxial stack. The P-side electrode includes multiple semi-circular electrode units, each having a straight edge and a rounded edge. The semi-circular electrode units are positioned close to the projection area of ​​the N-side electrode in the chip plane direction. The straight edges of the semi-circular electrode units form linear or planar current injection boundaries. This invention enables the current to extend laterally from the linear or planar current injection boundaries formed by the straight edges of the semi-circular electrode units towards the chip plane, reducing current spreading resistance, improving current distribution uniformity, and reducing the electrode shading area, thereby achieving low operating voltage and high light output.