Transparent conductive film with single layer structure, preparation method and application thereof

A technology of transparent conductive film and single-layer structure, which is applied in the direction of conductive layer, coating, and metal material coating process on the insulating carrier to achieve the effects of improving moisture and heat stability, improving anti-surge characteristics, and improving thermal stability

Active Publication Date: 2018-08-10
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are few studies on the stabili

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  • Transparent conductive film with single layer structure, preparation method and application thereof
  • Transparent conductive film with single layer structure, preparation method and application thereof
  • Transparent conductive film with single layer structure, preparation method and application thereof

Examples

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Example Embodiment

[0031] Example 1

[0032] (1)Using ultra-white glass with a thickness of 1mm as a transparent substrate, ultrasonically cleaning the glass with acetone, ethanol, and deionized water, and using dry N 2 Blow dry, then immediately put it into the vacuum chamber of the vacuum magnetron sputtering equipment, and start vacuuming;

[0033] (2) The vacuum of the vacuum chamber is to be pumped to 7×10 -4 Below Pa, introduce 40 sccm high purity argon as the deposition gas, and control the total pressure to 0.16 Pa. Take Ag-CdO alloy as the target material, where the atomic percentage of CdO is 12.9%; adjust the sputtering power of the target material to 40W, and use DC magnetron sputtering method to continue sputtering for 15s to deposit on the surface of the substrate, and film deposition After the end, the sample is taken out to obtain a glass / Ag-CdO sample, that is, the transparent conductive film. During the preparation process, the substrate temperature is room temperature, keep the su...

Example Embodiment

[0035] Example 2

[0036] (1)Using ultra-white glass with a thickness of 1mm as a transparent substrate, ultrasonically cleaning the glass with acetone, ethanol, and deionized water, and using dry N 2 Blow dry, then immediately put it into the vacuum chamber of the vacuum magnetron sputtering equipment, and start vacuuming;

[0037] (2) The vacuum of the vacuum chamber is to be pumped to 7×10 -4 Below Pa, introduce 40 sccm high purity argon as the deposition gas, and control the total pressure to 0.16 Pa. Using co-sputtering, using pure Ag and conductive ZnO as targets, adjust the sputtering power of the pure Ag target to 40W, and the conductive ZnO target to 16W. The DC magnetron sputtering method is used for continuous sputtering for 18s. The surface of the substrate is deposited, and the sample is taken out after the film deposition is completed, and a glass / Ag-ZnO sample is obtained. In the obtained sample, the atomic percentage of ZnO is 2.3%.

[0038] (3) The thickness of the...

Example Embodiment

[0039] Example 3

[0040] (1)Using ultra-white glass with a thickness of 1mm as a transparent substrate, ultrasonically cleaning the glass with acetone, ethanol, and deionized water, and using dry N 2 Blow dry, then immediately put it into the vacuum chamber of the vacuum magnetron sputtering equipment, and start vacuuming;

[0041] (2) The vacuum of the vacuum chamber is to be pumped to 7×10 -4 Below Pa, introduce 40 sccm high purity argon as the deposition gas, and control the total pressure to 0.16 Pa. Take Ag-CdO alloy as the target material, where the atomic percentage of CdO is 3.6%; adjust the sputtering power of the target material to 40W, and use the DC magnetron sputtering method to continue sputtering for 1 min to deposit on the surface of the substrate and film deposition After the end, the sample is taken out to obtain a glass / Ag-CdO sample, that is, the transparent conductive film. During the preparation process, the substrate temperature is room temperature, keep t...

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Abstract

The invention discloses a transparent conductive film with a single layer structure, a preparation method and application thereof. The preparation includes: putting a cleaned substrate into a vacuum chamber of a vacuum magnetron sputtering device, filling argon when the vacuum degree of the chamber is 1*10<-4>-7*10<-4>Pa, and controlling the total air pressure at 0.16Pa, adjusting the sputtering power of a target material to 10-60W, then opening a sample baffle plate, and employing direct current magnetron sputtering technique for deposition on the substrate surface to obtain the transparent conductive film. The transparent conductive film is composed of silver and a metal oxide. By direct sputtering of an alloy target composed of silver and the metal oxide or co-sputtering of silver and ametal oxide target, the transparent metal conductive film with good continuity and stability under a small thickness can be prepared, thereby reaching the purposes of lowering the structural complexity and reducing material consumption.

Description

technical field [0001] The invention relates to the field of preparation of transparent conductive films, in particular to a transparent conductive film with a single-layer structure and its preparation method and application. Background technique [0002] At present, transparent conductive films intended to replace ITO mainly include other doped semiconductors, conductive polymers, graphene, carbon nanotubes, and metals (including metal nanowires, metal grids, and ultrathin metal films). [0003] For example, the patent document with publication number US 005786094 A discloses an ultra-thin metal transparent conductive film with environmental stability. The prepared ultra-thin metal film has a single-layer structure, mainly including a glass substrate and a metal layer. The substrate is activated by pre-irradiating the substrate with an ion beam, an electron beam, a laser beam, or a combination thereof, thereby obtaining a continuous ultrathin metal layer at a lower thickn...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06H01B5/14
CPCC23C14/0688C23C14/35C23C14/352H01B5/14
Inventor 宋伟杰许君君李佳黄金华杨晔盛伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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