86 results about "Direct current magnetron sputtering" patented technology

The invention relates to the technical field of optoelectronics, and discloses a compact mixed optical path high-density integration method of a multi-level waveguide composite structure, which comprises the following steps: S1, preparing a multi-material layer: sequentially depositing a silicon layer, a silicon nitride layer and a lithium niobate layer, preparing the silicon layer and the silicon nitride layer through a chemical vapor deposition process, preparing the lithium niobate layer through direct current magnetron sputtering, and preparing the multi-material layer; the refractive indexes of the silicon layer, the silicon nitride layer and the lithium niobate layer meet gradient distribution; s2, designing an interlayer coupling structure: forming a gradient waveguide coupler at an interface of adjacent material layers to realize interlayer light field transmission; and S3, stress regulation and control layer integration: arranging a buffer layer with a matched thermal expansion coefficient between the silicon layer and the silicon nitride layer. According to the invention, the silicon layer, the silicon nitride layer and the lithium niobate layer are sequentially deposited, and the refractive index of each layer satisfies gradient distribution, so that the problems of large light field reflection and scattering loss and low coupling efficiency caused by the fact that most of the traditional multilayer waveguide structures adopt single material layers are solved.

A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.

The invention discloses a preparation method of a TCO film with good electroplate liquid corrosion resistance, which comprises the following steps: weighing ABCD powder according to the mass percentage, mixing the ABCD powder, grinding, carrying out compression molding, carrying out cold isostatic pressing molding, sintering in a high-temperature atmosphere and the like to obtain a target material, and carrying out sputtering coating by using the target material through a direct-current magnetron sputtering coating machine to obtain the TCO film. The TCO thin film prepared by the method has good electroplate liquid corrosion resistance, low resistivity and good conductivity, the sheet resistance of the thin film is only slightly increased and the transmittance is only slightly reduced after the thin film is soaked for 10 minutes, and the TCO thin film shows excellent electroplate liquid corrosion resistance, is used as an electrode material of a novel crystalline silicon heterojunction solar cell and has good application prospects. The TCO thin film electroplating copper electrode is used for replacing a traditional silk-screen printing silver paste electrode, complete silver removal is achieved, and the non-silicon cost of a heterojunction cell is reduced.

The invention particularly relates to a high-conductivity high-binding-force PP composite copper film and a preparation method thereof.According to the high-conductivity high-binding-force PP composite copper film and the preparation method thereof, a direct-current magnetron sputtering technology is adopted, a metallized Cu film is deposited on a PP base material, the binding force and the conductivity of the Cu film are greatly improved by finely regulating and controlling the deposition technology, the resistivity of the Cu film is as low as 9.72 * 10 <-8 > omega.m, and the conductivity of the Cu film is greatly improved. The binding force grade is grade 1 (the substrate temperature is-15 DEG C; the deposition air pressure is 0.24 Pa; the sputtering power is 1.5 kW; and the thickness of the Cu film is about 80 nm). The method is simple in preparation process, high in deposition efficiency and convenient for industrial popularization and application.

The invention relates to the technical field of solid oxide fuel cells, in particular to a preparation method of a manganese-cobalt spinel coating for a solid oxide fuel cell (SOFC) connector and the coating. The method comprises the following steps: treating a substrate, cleaning a target material, depositing a MnCo alloy coating by high-power pulse magnetron sputtering, and performing thermal conversion to form the (Mn, Co) 3O4 spinel coating. By optimizing process parameters, the uniformity, compactness and high-temperature oxidation resistance of the coating are remarkably improved, and the problems of shadow effect and coating defects existing in traditional direct-current magnetron sputtering are solved. The thickness of the obtained coating ranges from 4.8 micrometers to 5.3 micrometers, the surface roughness is lower than 1 micrometer, external diffusion of the Cr element can still be effectively restrained after the coating serves for 840 hours for a long time at the temperature of 800 DEG C, and the ASR value is lower than 30 m omega.cm. The preparation process is simple, is suitable for industrial production, and has high practical value and popularization prospect.

The invention discloses a preparation method of a superconducting nanowire single-photon detector capable of keeping high detection efficiency in a liquid helium temperature region. The preparation method comprises the following steps: adopting a double-layer substrate formed by silicon oxide and silicon; the method comprises the following steps: growing a niobium nitride film on a silicon oxide surface of a substrate through radio frequency magnetron sputtering to serve as a buffer layer, growing a niobium nitride film through direct current magnetron sputtering, and accurately measuring and controlling the thickness through XRR; the method comprises the following steps: preparing a double-line parallel nanowire structure in a manner of exposing PMMA A4 electron beam glue by electron beams, and transferring a nanowire pattern to a niobium nitride film in a reactive ion etching manner; the method comprises the following steps of: removing photoresist above a region needing to be etched on a silicon oxide surface of a substrate in a manner of exposing the AZ4620 photoresist through ultraviolet laser direct writing, and then etching silicon oxide and silicon from the silicon oxide surface of a device through reactive ion etching to prepare a suspension bridge structure. The high detection efficiency of the device is ensured while the working temperature of the device is greatly improved.

The invention provides a hydrophobic layer and a preparation method thereof, a hydrophobic composite layer and a product. The preparation method of the hydrophobic layer comprises the following steps: in the presence of a nitrogen source, performing co-deposition on the surface of a binding layer by adopting direct-current magnetron sputtering and radio-frequency magnetron sputtering to form the hydrophobic layer, the target material of the direct current magnetron sputtering comprises one or more of Zr, Ti, Cr, Ta and compounds thereof; a target material of the radio frequency magnetron sputtering comprises Si. The surface of the prepared coating has excellent hydrophobic performance, an easy-to-clean function, friction resistance and scraping resistance, the service life of the hydrophobic layer can be further prolonged, the coating can be widely applied to kitchen and bath products, and the excellent quality and attractiveness of the products are guaranteed.

The invention discloses a coating process of a glass packaging substrate and the glass packaging substrate, and the coating process comprises the following steps: selecting a magnetron sputtering instrument, installing a nickel chromium target material and a copper target material, and placing the glass substrate on a plating rack of the magnetron sputtering instrument; sequentially starting a mechanical pump and a molecular pump to vacuumize the vacuum cavity; sequentially carrying out direct-current magnetron sputtering on a nickel chromium bonding layer and a copper film layer on the surface of the glass substrate; and after the processed product is taken out, the vacuum cavity is kept in a vacuum state and is shut down. A direct-current sputtering metallization method is adopted, the nickel chromium bonding layer is sputtered on the glass substrate, then the copper film layer is sputtered on the nickel chromium bonding layer, the bonding strength of the copper film metal layer and the glass substrate can be improved, the surface of the metal layer is smooth, the organization structure is meticulous, and the conductivity is good; and the product quality and reliability of the semiconductor and microelectronic packaging glass substrate are improved.

This invention relates to the field of thin film technology, specifically disclosing a method and a thin film for preparing single-crystal TiN thin films based on pulsed DC magnetron sputtering. The method includes: placing a substrate into the sputtering chamber of a magnetron sputtering apparatus, evacuating and heating it to 400°C; introducing an activation gas and performing initial magnetron sputtering on a titanium target at a sputtering threshold to form an adhesion-promoting layer on the substrate surface; turning off the activation gas and then introducing a reactive sputtering gas into the sputtering chamber; then performing high-intensity sputtering while simultaneously turning on a bias power supply, wherein the bias power supply is a synchronous pulse power supply that is inversely phase to the pulsed DC power supply; turning off the pulsed DC power supply and the introduction of nitrogen in the reactive sputtering gas, and continuing magnetron sputtering on the substrate; cycling 2-4 times to cool to room temperature to obtain a single-crystal TiN thin film. In this application, the substrate temperature is only 400°C during deposition, thus reducing energy consumption and shortening the time during subsequent cooling. The titanium nitride thin film prepared in this application exhibits a high sputtering deposition rate and high crystal quality.

The invention discloses a heat treatment process for improving the hardness, toughness and wear resistance of a Zr-B-N / ZrO2 multi-layer composite coating, and belongs to the technical field of coatings. According to the process, a vacuum tube furnace is adopted for carrying out heat treatment on a Zr-B-N / ZrO2 multilayer composite coating deposited through a high-power pulse magnetron sputtering and pulse direct-current magnetron sputtering composite technology, the process comprises a heating stage, a heat preservation stage and a cooling stage which are sequentially carried out, the heating rate of the heating stage is 5-15 DEG C / min, the temperature T of the heat preservation stage is 500-800 DEG C, and the temperature T of the cooling stage is 20-30 DEG C; the cooling rate of the cooling stage is 3-6 DEG C / min. The heat treatment process of the multi-layer composite coating is simple, and industrial production is easy to realize. The Zr-B-N / ZrO2 multilayer composite coating prepared by the invention has good hardness, toughness and wear resistance, and can significantly enhance the wear resistance and heat resistance of a matrix.

The application discloses a gradient diamond / molybdenum disulfide composite self-lubricating wear-reducing engineering ceramic coating and a preparation method thereof, belongs to the technical field of full ceramic self-lubricating wear-resistant coatings, and the coating is sequentially formed of a multi-stage size progressive diamond coating and a molybdenum disulfide coating from the surface of an engineering ceramic substrate to the outside. The multi-stage size progressive diamond coating comprises a micron diamond coating, a fine-grained diamond coating and a nano diamond coating, and the molybdenum disulfide coating is deposited on the diamond coating. The diamond coating is prepared by using a hot-wire chemical vapor deposition method, and the molybdenum disulfide film covering the diamond coating is prepared by using a direct-current magnetron sputtering method. Under certain conditions, the molybdenum disulfide in the composite coating reacts with the nano diamond and is converted into onion-like carbon, so that the hardness and lubricating performance of the composite coating are improved, and the friction and wear are reduced. The composite coating prepared by using the method has more stable bonding force and adhesion, and the service life of a machine is improved.

The application discloses a heterostructure nanocrystalline tantalum-tungsten alloy film and a preparation method thereof. The method selects a tantalum-tungsten alloy prepared by electron beam vacuum melting as a target material, and uses a direct current magnetron sputtering method to prepare a heterostructure nanocrystalline tantalum-tungsten alloy film composed of small-grain-size columnar crystal structures close to a substrate and large-grain-size columnar crystal structures close to a surface on a substrate. The direct current magnetron sputtering method is adopted, the tantalum-tungsten alloy is selected as the target material, and the film structure is adjusted by regulating the direct current magnetron sputtering parameters including a sputtering power, a sputtering time and a substrate temperature, so that a bimodal heterostructure nanocrystalline tantalum-tungsten alloy film with mixed small-grain-size and large-grain-size columnar crystal structures is obtained, the hardness of the tantalum-tungsten alloy film is improved, and the tantalum-tungsten alloy film is suitable for fields such as a gun barrel coating and a cutter coating.

The invention belongs to the technical field of hydrogen evolution electrocatalyst preparation, and particularly relates to a nickel-based electrocatalyst and a preparation method and application thereof. According to the nickel-based electrocatalyst, foamed nickel serves as a substrate material, a nickel-based alloy film is obtained through a direct-current magnetron sputtering method, and then the nickel-based electrocatalyst is obtained through liquid-phase reduction treatment of ruthenium. The invention provides a design thought of a hydrogen evolution electrocatalyst which is low in cost, easy to obtain and high in activity, and the nickel-based electrocatalyst prepared by the method has relatively high charge transfer efficiency and excellent hydrogen evolution activity, and shows good durability and relatively low hydrogen evolution overpotential under a long-term alkaline large-current condition. The preparation method disclosed by the invention can be used for synthesizing different nickel-based alloy pre-catalysts, and has a wide development prospect and a relatively large application space.

The invention relates to the technical field of preparation of thin film materials, and particularly provides a BaTiO3 ferroelectric thin film with high energy storage at low temperature and a method and application of the BaTiO3 ferroelectric thin film. The preparation method of the BaTiO3 ferroelectric film comprises the following steps: processing a substrate, depositing a bottom electrode on the substrate, depositing a buffer layer on the bottom electrode, depositing a barium titanate dielectric layer on the buffer layer, and depositing a top electrode on the barium titanate dielectric layer. The step of depositing the buffer layer on the bottom electrode comprises the following steps of: adopting a LaNiO3 target material, keeping the temperature at 200 DEG C, and depositing the buffer layer on the substrate in a radio frequency or direct current magnetron sputtering mode; and the total film thickness of the buffer layer is 0-50nm. The problems that in the prior art, a barium titanate film prepared through an in-situ preparation method at the temperature of 200 DEG C is poor in performance, application requirements cannot be met, and the performance of a BaTiO3 ferroelectric film is regulated and controlled by the thickness of a buffer layer are solved.

The present invention belongs to the fields of automatic control technology and power electronics technology, and specifically relates to a fast and reliable combustion-supporting circuit for a DC magnetron sputtering coating power supply. By adding a combustion-supporting circuit, the voltage output by the combustion-supporting circuit is superimposed on the voltage output by a high-frequency rectifier bridge of a high-frequency inverter switching power supply to achieve the amplitude of a combustion-supporting ignition voltage. When ignition is successful, the output current of the DC magnetron sputtering power supply exceeds a ignition success judgment threshold, or the output voltage of the DC magnetron sputtering power supply is lower than a main power supply no-load voltage judgment threshold, and the combustion-supporting circuit stops working. At this time, the voltage and current required by the DC magnetron sputtering process are supplied by the main circuit of the DC magnetron sputtering power supply. Once the glow is extinguished, the combustion-supporting circuit starts outputting, and the output voltage of the power supply reaches the amplitude of the combustion-supporting ignition voltage again, thereby ensuring the continuity of the coating process; reducing arc energy and improving coating quality.

The invention discloses an aluminum oxide zinc-based solar blind photoelectric detector and a preparation method and application thereof, and belongs to the technical field of photoelectric detectors. Comprising a substrate layer, an N-type semiconductor layer, a P-type semiconductor layer and a top electrode layer, the N-type semiconductor layer is arranged on the substrate layer, the P-type semiconductor layer is arranged on the N-type semiconductor layer, and the top electrode layer is arranged on the P-type semiconductor layer. The preparation method of the aluminum oxide zinc-based solar blind photoelectric detector comprises the following steps: cleaning indium tin oxide to obtain a bottom electrode; a metal aluminum target and a metal zinc target are co-sputtered on the bottom electrode through pulse magnetron in an argon oxygen environment to obtain an aluminum zinc oxide film; a metal copper target is sputtered on the aluminum zinc oxide film through pulse magnetron sputtering in an argon oxygen environment to obtain a copper oxide film; and the silver target is subjected to direct-current magnetron sputtering to obtain a silver top electrode. The preparation method is simple, the film stability is high, and later integration and application of the photoelectric detector are facilitated. The photoelectric detector is fast in response speed and high in responsivity, and shows huge potential as a secure communication system optical receiver using international Morse codes.

The invention relates to the technical field of optical thin film manufacturing, in particular to a Mo2C / Ge multilayer film reflector and a preparation method thereof. The structure comprises a substrate, a periodic multilayer film and a cap layer which are tightly stacked in sequence from bottom to top, the periodic multilayer film comprises germanium films and molybdenum carbide films which are alternately stacked, and the first layer and the last layer are germanium films; in one period of the periodic multilayer film, the thickness of the germanium film is 17-21 nm, and the thickness of the molybdenum carbide film is 7-12 nm; the cap layer is made of molybdenum carbide, and the thickness of the cap layer is 2-4 nm. The number of cycles of the periodic multilayer film is 18-25, and the thickness of each cycle is 24-33 nm. And a direct-current magnetron sputtering method is adopted for alternate lamination preparation. The Mo2C / Ge multilayer film reflector has the advantages that the Mo2C / Ge multilayer film reflector has relatively small interface diffusion and relatively good stability; and meanwhile, the reflectivity at frequency doubling and long wave positions is relatively low, and the out-of-band reflectivity inhibition is better.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

This invention discloses a method for coating tantalum on the surface of biomedical PEEK materials. The method includes the following steps: S1, PEEK pretreatment; S2, PEEK sample preparation: drying the pretreated PEEK wire in an oven and printing the PEEK sample using a high-temperature 3D printer; S3, using a Ta2O5 target as the evaporation source, employing DC magnetron sputtering technology, and adjusting the sputtering time and gas to coat the surface of the PEEK sample with tantalum of 250 ± 20 nm; S4, obtaining a tantalum coating on the PEEK surface after annealing. This invention provides a method for coating tantalum on the surface of biomedical PEEK materials, which can coat tantalum on the surface of PEEK without embedding the tantalum in the PEEK matrix. The obtained Ta-PEEK material has excellent osteoinductive properties and can be applied to implantable bone prostheses such as artificial temporomandibular joint substitutes.

The application discloses an AlCrTiSiN composite coating with a nanocrystal / amorphous composite structure or a single amorphous structure and a preparation method of the AlCrTiSiN composite coating. The coating is prepared by adopting a pulse direct current magnetron sputtering and radio frequency direct current magnetron sputtering composite technology, and an AlCrTi alloy target and a single Si target are selected as the target material. The alloy target is connected with a direct current power supply, and the single Si target is connected with a radio frequency power supply. When the coating is plated, the AlCrTi alloy target is turned on, the bias voltage is adjusted to be -20-150 V, the vacuum chamber pressure is adjusted to be 0.3-1.0 Pa, an AlCrTi transition layer is deposited, and the deposition time is 10-30 min. The AlCrTi is kept on and the reaction gas N2 is introduced, the Si target is turned on, and the AlCrTiSiN nanocomposite coating is deposited. The AlCrTiSiN nanocomposite coating prepared by the application has the advantages of simple preparation process, controllable composition, good repeatability, easy industrial production and strong practicability.

A preparation and coupling optimization method of bar SOI waveguide using end face coupling belongs to the field of micro-nano fine structure processing and optical precision measurement. Through two-step photoetching and two-step etching, on one hand, the base section plane highly coinciding with the waveguide end face can be etched, and on the other hand, the etching widening of the Si base etching channel cannot cause the waveguide below to be hollowed out. By using the DC magnetron sputtering Cr mask, the waveguide material can be prevented from being etched and damaged in the deep silicon etching process. Through the ion beam etching process, the waveguide end face and the base etching sidewall are completely coincided, so that part of the light spot is avoided from being scattered by the Si base in the optical fiber coupling process, and the coupling efficiency of the waveguide is improved. By combining the FDTD simulation results, the ICP-PECVD is used to deposit the low internal stress SiO2+Si3N4 antireflection film with a suitable thickness on the waveguide end face, the light spot is avoided from being reflected on the waveguide end face, and the light spot coupling efficiency is maximized.

This invention relates to the field of diesel engine bearing surface coating technology, specifically to a magnetron sputtering method for continuous Ni layer coverage in Pb-rich regions of CuPb22Sn bearings. The method includes: pretreating the CuPb22Sn bearing alloy substrate; argon etching and cleaning the pretreated substrate to remove the surface oxide layer and activate the substrate surface; depositing a Ni layer on the substrate surface using DC magnetron sputtering technology, and through comprehensive control of the substrate temperature and bias voltage, ensuring continuous Ni layer coverage in the Pb-rich regions; and performing post-processing under vacuum conditions after deposition. Using this method, even with a relatively thin Ni layer, good continuous coverage of the Pb-rich regions can be achieved, which is beneficial for improving the integrity of the Ni layer and the interface quality of subsequent functional coatings.

The application discloses a high-hardness Ta-Hf-W nitride film and a preparation method and application thereof. The nitride film is composed of Ta, Hf, W and N atoms, and is expressed by a chemical formula: Ta a Hf b W c N d ; wherein a, b, c and d represent atomic ratios, the value range of a is 17-21, the value range of b is 7-17, the value range of c is 29-31, the value range of d is 31-47, and a+b+c+d=100; the Ta-Hf-W nitride film is prepared by using a reaction formula multi-target direct-current magnetic control sputtering technology, has a single-phase face-centered cubic crystal structure, the surface roughness of the film is 1.85-2.20 nm, the hardness is 28.4-36.1 GPa, and the elastic modulus is 308.3-357.2 GPa; and the film is applied to the surface modification of structure materials in an extreme service condition field, so that the strength, hardness and wear resistance of the material surface are improved.

The invention provides a preparation method of a memristor based on nanometer laser direct writing, and relates to the technical field of memristor preparation. An adhesion layer and a copper film are deposited on a high-resistance silicon substrate by adopting a direct current magnetron sputtering method; forming an electrode pattern on the copper film through a photoetching process; constructing a metal-oxide-metal bridging structure in an unetched region between the electrode patterns by adopting a nano laser direct writing technology; and performing electroforming processing on the device after laser processing, and activating the memristive behavior.

The application discloses a gradient structure Ag / FeMnCrNi layered composite material and a preparation method, and belongs to the field of metal surface modification. The layered composite material comprises Ag layers and FeMnCrNi layers arranged alternately, the thickness of the Ag layers and the FeMnCrNi layers in one modulation period is the same, and the thickness of the Ag layers and the FeMnCrNi layers in each modulation period is gradiently increased. The Ag layers and the FeMnCrNi layers are alternately deposited by direct current magnetron sputtering using an Ag target and a FeMnCrNi target to obtain the gradient structure Ag / FeMnCrNi composite material. The method utilizes the design idea of the multi-scale gradient non-uniform structure, combines the multi-principal element effect of the HEA with the constraint effect of the gradient layer interfacial heterogeneity, constructs a soft and hard heterostructure gradient, and in the plastic deformation process, the strain gradient is generated due to the different deformations of the soft and hard components, new dislocation structures are activated, the mechanical behavior of the whole metal layered composite material is affected, and finally the breakthrough of the mechanical properties is realized.

The invention belongs to the technical field of electronic components, and particularly relates to a ceramic piezoresistor and a preparation method and application thereof. The ceramic varistor comprises a ceramic substrate and a copper-based electrode formed on the surface of the ceramic substrate, the copper-based electrode comprises a metal transition layer, a copper layer, an aluminum layer, a DLC layer and a resin layer which are sequentially arranged on the ceramic substrate, and the ceramic varistor is specifically prepared by the following steps: firstly, preparing the metal transition layer on the substrate through a direct current magnetron sputtering coating process; preparing a copper layer and an aluminum layer in sequence through a high-power pulse magnetron sputtering process, preparing a DLC surface layer on the surface of the aluminum layer by adopting a plasma enhanced chemical vapor deposition technology, and finally coating the DLC layer with a resin layer. All the layers are matched with one another, so that the obtained ceramic varistor finally realizes collaborative optimization of various performances.

The invention discloses a method for regulating Ta by N element 0.5 W 0.5 N x The method for forming a hard film comprises the following steps: using a Ta target and a W target as target materials, using argon as sputtering gas and nitrogen as reaction gas, and obtaining a Ta film on a substrate by DC magnetron sputtering the target material. 0.5 W 0.5 N x Hard film. The present invention uses multi-target DC magnetron sputtering from W2N to Ta 0.5 W 0.5 N x Transition design of thin films, using nitrogen content to control Ta 0.5 W 0.5 N x The valence electron concentration of the film allows tungsten to replace tantalum to prepare a single-phase solid solution structure film with an x ​​value of 0.82~1.02. Its surface combines the advantages of ductile metal materials tungsten and nitride to form a property of high hardness and toughness, which can effectively improve the strength and toughness of the film, and also has better durability in terms of wear resistance, which is beneficial to extending the service life of the tool.

The invention relates to the technical field of thin film transistors, in particular to a thin film transistor of a heterogeneous double-channel layer and a preparation method of the thin film transistor. According to the method, an amorphous InSnO thin film and an amorphous TaLaO thin film are sequentially prepared at the room temperature through a radio frequency magnetron sputtering method and a direct current magnetron sputtering method respectively, so that an amorphous TaLaO thin film / amorphous InSnO thin film structure heterogeneous double-layer film is formed to serve as a channel layer; according to the method, an Al thin film and a Ti thin film are sequentially prepared at room temperature based on a direct current magnetron sputtering method, so that a double-layer film of a Ti thin film / Al thin film structure is formed to serve as an electrode; according to the method, an organic polytetraethylene phenol film is prepared by adopting a dip-coating process of a solution method to serve as a dielectric layer, and the organic polytetraethylene phenol film is applied to preparation of a top gate coplanar structure thin film transistor. The prepared thin film transistor device has high performance and low energy consumption, and the saturation mobility of the thin film transistor device is greater than 60 cm < 2 > / Vs, 0Vlt; a threshold voltage lt; 1V and an off-state current lt; and 10 <-10 > A.

The application provides a broadband gap CGSe flexible thin film solar cell and a preparation method thereof. The thin film solar cell comprises a flexible metal substrate layer, a back electrode layer, a CGSe absorption layer doped with sulfur and / or aluminum, a buffer layer, a window layer and a grid electrode. The preparation method of the thin film solar cell comprises the following steps: forming the back electrode layer on the flexible metal substrate layer by direct current magnetron sputtering; using a molecular beam epitaxy device, depositing the CGSe absorption layer by a three-step co-evaporation method while selectively doping aluminum, and selectively annealing in an S atmosphere to form the CGSe absorption layer doped with sulfur and / or aluminum; forming the buffer layer and then annealing; forming the window layer by radio frequency magnetron sputtering; and forming the grid electrode by electron beam evaporation to obtain the thin film solar cell. The broadband gap CGSe flexible thin film solar cell is suitable for being used as an underwater solar cell, and provides a high-efficiency power source for underwater vehicles, autonomous systems and the like.

The invention provides a large-modulation-depth dynamic saturable absorber mirror and a preparation and working method thereof, the large-modulation-depth dynamic saturable absorber mirror comprises a vanadium dioxide nano film and a gold film silicon substrate high-reflection mirror, and the film is deposited on the upper layer of a gold film of the gold film high-reflection mirror through a direct current magnetron sputtering technology to form a dynamic saturable absorber mirror device; the core mechanism is that when the dynamic saturable absorption mirror is driven by enhanced light intensity in a cavity, phase transformation and optical property dynamic transformation occur, starting from low reflectivity and high loss of a vanadium dioxide insulating phase, the state is converted into a vanadium dioxide mixed phase saturable absorption state through phase transformation equivalent nonlinear absorption, and then the state is converted into a metallic state saturable absorption state; and finally, the metal-state saturable absorption is completely saturated, so that the large-modulation-depth dynamic saturable absorption mirror is realized. According to the invention, the modulation depth of the saturable absorber mirror can be effectively improved and flexibly adjusted; and the basic temperature of the device can be regulated and controlled in a passive / active manner, so that the universality and adaptability of system application are enhanced.