10 results about "Direct current magnetron sputtering" patented technology

This invention relates to the field of thin film technology, specifically disclosing a method and a thin film for preparing single-crystal TiN thin films based on pulsed DC magnetron sputtering. The method includes: placing a substrate into the sputtering chamber of a magnetron sputtering apparatus, evacuating and heating it to 400°C; introducing an activation gas and performing initial magnetron sputtering on a titanium target at a sputtering threshold to form an adhesion-promoting layer on the substrate surface; turning off the activation gas and then introducing a reactive sputtering gas into the sputtering chamber; then performing high-intensity sputtering while simultaneously turning on a bias power supply, wherein the bias power supply is a synchronous pulse power supply that is inversely phase to the pulsed DC power supply; turning off the pulsed DC power supply and the introduction of nitrogen in the reactive sputtering gas, and continuing magnetron sputtering on the substrate; cycling 2-4 times to cool to room temperature to obtain a single-crystal TiN thin film. In this application, the substrate temperature is only 400°C during deposition, thus reducing energy consumption and shortening the time during subsequent cooling. The titanium nitride thin film prepared in this application exhibits a high sputtering deposition rate and high crystal quality.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

This invention discloses a method for coating tantalum on the surface of biomedical PEEK materials. The method includes the following steps: S1, PEEK pretreatment; S2, PEEK sample preparation: drying the pretreated PEEK wire in an oven and printing the PEEK sample using a high-temperature 3D printer; S3, using a Ta2O5 target as the evaporation source, employing DC magnetron sputtering technology, and adjusting the sputtering time and gas to coat the surface of the PEEK sample with tantalum of 250 ± 20 nm; S4, obtaining a tantalum coating on the PEEK surface after annealing. This invention provides a method for coating tantalum on the surface of biomedical PEEK materials, which can coat tantalum on the surface of PEEK without embedding the tantalum in the PEEK matrix. The obtained Ta-PEEK material has excellent osteoinductive properties and can be applied to implantable bone prostheses such as artificial temporomandibular joint substitutes.

This invention relates to the field of diesel engine bearing surface coating technology, specifically to a magnetron sputtering method for continuous Ni layer coverage in Pb-rich regions of CuPb22Sn bearings. The method includes: pretreating the CuPb22Sn bearing alloy substrate; argon etching and cleaning the pretreated substrate to remove the surface oxide layer and activate the substrate surface; depositing a Ni layer on the substrate surface using DC magnetron sputtering technology, and through comprehensive control of the substrate temperature and bias voltage, ensuring continuous Ni layer coverage in the Pb-rich regions; and performing post-processing under vacuum conditions after deposition. Using this method, even with a relatively thin Ni layer, good continuous coverage of the Pb-rich regions can be achieved, which is beneficial for improving the integrity of the Ni layer and the interface quality of subsequent functional coatings.

This invention proposes an indium oxide / indium gallium tin oxide (IGa Tin) dual-channel thin-film transistor and its fabrication method. The specific fabrication method involves using heavily doped p-type silicon and silicon dioxide as the gate and insulating layers, respectively, as the substrate. First, an ultrathin layer of indium oxide is grown on the substrate using radio frequency magnetron sputtering. Then, a thicker layer of IGa Tin oxide is grown using radio frequency magnetron sputtering. Next, aluminum is grown as the metal electrode using DC magnetron sputtering. Finally, aluminum oxide is used as the passivation layer. All deposition layers are patterned using a mask to fabricate the IGa Tin / indium gallium tin oxide dual-channel thin-film transistor. This invention utilizes the highly conductive ultrathin layer of indium oxide to provide carrier concentration and the thicker IGa Tin oxide film to regulate the carrier transport characteristics of the device. The thin-film transistor of this invention exhibits advantages such as high mobility, low threshold voltage, and low subthreshold swing. It also possesses advantages such as good electrical stability, high on / off current ratio, and simple fabrication method.