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9results about How to "Low absorption rate" patented technology

An implantable electrode lead

This utility model belongs to the field of medical device technology and discloses an implantable electrode lead. The implantable electrode lead includes a stimulation segment, a middle segment, and a connecting segment connected sequentially. The stimulation segment includes several stimulation contacts, the connecting segment includes several connecting contacts, and the middle segment includes an outer sheath and several guidewires housed within the sheath. The guidewires electrically connect the stimulation contacts and connecting contacts one-to-one. The stimulation segment and at least a portion of the middle segment are implanted intracranially to form an intracranial segment. The middle segment near and fixed to the skull forms a cranial segment, and the portion of the middle segment extending outside the skull and the connecting segment form an extracranial segment. The guidewires in the intracranial segment are straight, those in the cranial segment are spiral, and at least a portion of the guidewires in the extracranial segment are spiral, with the pitch of the spiral in the cranial segment being smaller than that in the extracranial segment. This utility model reduces manufacturing costs and heat generation; furthermore, it facilitates intraoperative operation and ensures a comfortable postoperative experience for the user.
Owner:SCENERAY

Preparation method and application of white stable lignin

PendingCN122277936ALimit free radical reactionsEfficient removalUltraviolet lightsRadiative cooling
A method for preparing white stable lignin and its application are disclosed. This invention addresses the limitations of existing lignin decolorization processes, which are constrained by long decolorization times and difficulty in maintaining color stability under ultraviolet light stimulation after decolorization, thus failing to meet the low absorption requirements of radiative cooling materials in the visible light band. The method includes: 1. Preparation of DES; 2. Preparation of lignin solution; 3. Modification of lignin; 4. Bleaching; 5. Preparation of white stable lignin. Application: It is used in the preparation of refrigeration materials.
Owner:NORTHEAST FORESTRY UNIV

Substrate structure, substrate surface treatment method and device

The invention discloses a substrate structure and a substrate surface treatment method and device.The method comprises the steps that a transparent inorganic substrate is provided, and the roughness Ra of the to-be-treated surface of the substrate ranges from 0.1 micrometer to 20 micrometers; an energy absorption layer is at least formed on the to-be-treated surface of the substrate, the energy absorption layer completely covers the micro protrusions and the micro pits on the to-be-treated surface of the substrate, and the energy absorption coefficient of the energy absorption layer is larger than that of the substrate; ultra-short pulse laser is adopted to irradiate the substrate, so that phase explosion happens to the energy absorption layer, multi-photon absorption happens to the micro-protrusion area, and under the action of phase explosion and multi-photon absorption, the laser conducts cold cutting on the micro-protrusions; wherein the wavelength lambda of the ultrashort pulse laser ranges from n * Ra / 10 to n * Ra, and n is the refractive index of the substrate. According to the method, under the combined action of phase explosion and multi-photon absorption, the micro-protrusions are subjected to cold cutting through laser, so that the micro-protrusions on the surface to be treated are stripped, and the substrate structure is not damaged.
Owner:YONGJIANG LAB

Optical fiber assembly for dental diagnosis and treatment

The utility model belongs to the technical field of optical fiber light guide bars, and particularly relates to an optical fiber assembly for dental diagnosis and treatment, which comprises a light guide component and a connector fixed on the light guide component and used for connecting the light guide component with a dental curing machine, a convex block for extruding and expanding the rubber ring outwards is arranged in the plug head in a sliding manner, and the expansion action is realized by the thrust of the tail end in the inserting process of the plug head and the curing machine; it can be understood that the inner cladding of the optical fiber uses polytetrafluoroethylene to realize low-refractive-index total reflection, reduce light leakage and have high chemical stability; the middle layer reduces interface scattering and refractive index through silicon resin so as to inhibit light loss; an outer cladding layer is aluminized to reflect lateral light leakage and resist high temperature; and meanwhile, a linkage mechanism of the convex block and the rubber ring is arranged, and the plugging action of the connector and the expansion of the rubber ring are synchronously controlled through a linkage ring, so that the plugging convenience and the connection stability are realized.
Owner:NANJING SHENGLUE TECHNOLOGY CO LTD

Light emitting diode and method of manufacturing the same

The embodiment of the application discloses a light emitting diode and a preparation method thereof, and relates to the field of optoelectronic technology. The light emitting diode comprises an anode, a cathode, a light emitting layer arranged between the anode and the cathode, a composite electron transport layer arranged between the cathode and the light emitting layer, and a metal layer arranged between the cathode and the composite electron transport layer. The material of the composite electron transport layer comprises a first material and a second material. The first material is a first electron transport material, and the second material is a metal salt. The metal element in the metal salt is selected from group VIII elements. The material of the metal layer is a doped or undoped metal element, and the metal element in the metal element is selected from group VIII elements. The composite electron transport layer of the light emitting diode has good transmittance, and the light emitting diode has high brightness and efficiency.
Owner:TCL TECHNOLOGY GROUP CORPORATION

Method for laser additive manufacturing of AlSi10Mg alloy

The invention relates to the technical field of metal additive manufacturing, in particular to a method for laser additive manufacturing of an AlSi10Mg alloy. Comprising the steps that the thickness of a powder laying layer is set, a scanning path is planned, and AlSi10Mg alloy powder is laid on a preheated aluminum substrate according to the thickness of the powder laying layer to form a forming area; the forming area is scanned according to the scanning path, the AlSi10Mg alloy powder in the forming area is molten in the scanning process, a molten pool is formed, and a current deposition layer is obtained after the molten pool is cooled and formed; and the powder laying and scanning processes are repeated, subsequent deposition layers are constructed on the current deposition layer layer by layer, after an AlSi10Mg alloy forming part is obtained, the preheated aluminum substrate is separated, and the laser additive manufacturing AlSi10Mg alloy is obtained. According to the method, high-power laser is combined with a large-layer-thickness process, and the defects of strong plasticity inversion and high defect rate in the prior art are overcome by optimizing the scanning rate, the powder laying layer thickness and molten pool behavior control.
Owner:XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY

Carbon-coated phosphate material and preparation method thereof, positive pole piece, battery monomer and electric device

PendingCN121964551Alow absorption ratereduce the risk of deteriorationSecondary cellsPositive electrodesElectrical batteryPositive current
The invention discloses a carbon-coated phosphate material and a preparation method thereof, a positive pole piece, a battery monomer and an electric device. The battery monomer comprises a positive pole piece, a negative pole piece and an electrolyte, and the positive pole piece comprises a positive current collector and a positive film layer which is arranged on at least one surface of the positive current collector and comprises a positive active material; the positive electrode active material comprises a carbon-coated phosphate material, and the specific surface area of the carbon-coated phosphate material is less than or equal to 8m < 2 > / g. According to the embodiment of the invention, the cycle performance of the battery monomer can be improved.
Owner:CONTEMPORARY AMPEREX TECHNOLOGY CO LTD

A gallium nitride-based semiconductor laser having a graded optical field waveguide layer

PendingCN122292047AImprove mode stabilityreduce penetrationScattering lossDivergence angle
This invention proposes a gallium nitride-based semiconductor laser with a gradient optical field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, refractive index distribution, and optical absorption coefficient distribution obtained from SIMS testing of both the upper and lower waveguide layers satisfy any one of the ExpGro1, ExpGro2, ExpGro3, and Shah functions. This allows for the synergistic control of optical field confinement, loss suppression, and carrier distribution, thereby regulating the laser's optical field distribution. The fabricated gradient refractive index waveguide layer, satisfying the relevant function distribution, confines photons generated by the active layer within the waveguide, smoothing the optical field within the waveguide layer. This eliminates reflection and scattering losses caused by abrupt refractive index differences at the interface, reduces light field penetration into the confinement layer, lowers optical leakage and threshold losses, suppresses the excitation of higher-order transverse modes, achieves stable fundamental mode output, improves the laser's mode stability and beam quality factor, and reduces the horizontal divergence angle.
Owner:GEN SEMICONDUCTOR (ANHUI) CO LTD