A semiconductor light emitting element

Abstract

The present invention discloses a semiconductor light-emitting element, comprising a semiconductor epitaxial stack, having a first surface and a second surface opposite thereto, comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer located therebetween; a through hole, at least penetrating the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer; an electrical connection structure, arranged in the through hole, extending to the first surface of the first conductive semiconductor layer, and forming an electrical connection with the first conductive semiconductor layer; a first electrode metal layer, arranged on the second surface of the semiconductor epitaxial stack, and connected to the electrical connection structure; characterized in that: at least one section of the through hole exposes the first conductive semiconductor layer, and the angle between the side wall of the first section of the through hole and the first surface is θ1, 0°<θ1≤90°. The present invention can improve the uniformity of current expansion, and enhance the uniformity of luminous brightness and luminous efficiency of the semiconductor light-emitting element.

Description

Technical Field

[0001] The invention relates to a semiconductor light emitting element, belonging to the technical field of semiconductor optoelectronic devices. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor diode that can convert electrical energy into light energy. Compared with traditional electrical lighting, LED lighting has the advantages of high luminous intensity, high efficiency, small size, and long service life. It is considered to be one of the most promising light sources and is widely used in lighting, signal display, backlight, car lights, and large-screen displays.

[0003] Existing light-emitting diodes include horizontal types and vertical types. The vertical type of light-emitting diode is obtained by transferring the semiconductor stacked crystal layer to other substrates such as silicon, silicon carbide or metal substrates, and removing the original epitaxial growth substrate. Compared with the horizontal type, it can effectively improve the technical problems of light absorption, current crowding or poor heat dissipation caused by the epitaxial growth substrate. The transfer of the substrate generally adopts a bonding process, and the bonding is mainly carried out by metal-metal high temperature and high pressure bonding, that is, a metal bonding layer is formed between one side of the semiconductor stacked crystal layer and the substrate. The other side of the semiconductor stacked crystal layer provides a light-emitting side, and a wire electrode is arranged on the light-emitting side to provide current injection or outflow, and the substrate below the semiconductor stacked crystal layer provides current outflow or inflow, thereby forming a light-emitting diode in which the current passes vertically through the semiconductor stacked crystal layer.

[0004] In the existing vertical structure, the current is expanded through the electrode and the electrode extension strip. The end of the electrode extension strip is prone to poor current expansion, resulting in uneven current expansion, thereby affecting the uniformity of the luminous brightness of the semiconductor light-emitting element. Summary of the invention

[0005] In order to solve the above problems, the present invention provides a semiconductor light-emitting element, comprising a semiconductor epitaxial stack, having a first surface and a second surface opposite to the first surface, comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer providing the first surface, and the second conductive semiconductor layer providing the second surface; a through hole, at least penetrating the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer of the semiconductor epitaxial stack; an electrical connection structure, arranged in the through hole, the electrical connection structure extending to the first surface of the first conductive semiconductor layer, forming an electrical connection with the first conductive semiconductor layer; a first electrode metal layer, arranged on the second surface of the semiconductor epitaxial stack, connected to the electrical connection structure; characterized in that: at least one section of the through hole exposes the first conductive semiconductor layer, so that the electrical connection structure contacts the first conductive semiconductor layer in the through hole, and the angle between the side wall of the first section of the through hole and the first surface of the semiconductor epitaxial stack is θ1, 0°<θ1≤90°.

[0006] Preferably, the first section of through holes exposes all or part of the first conductive type semiconductor layer.

[0007] Preferably, the semiconductor light emitting element further comprises a second section of through holes leaking out of the second conductive semiconductor layer and the active layer, and the included angle between the sidewall of the second section of through holes and the second surface of the second conductive semiconductor layer is θ2, 30°≤θ2<90°.

[0008] Preferably, the material of the active layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

[0009] Preferably, the electrical connection structure is not electrically connected to the second conductive type semiconductor layer and the active layer, and a sidewall insulating layer is provided between the electrical connection structure and the second conductive type semiconductor layer and the active layer.

[0010] Preferably, an ohmic contact layer is further provided on the first conductive semiconductor layer, and the electrical connection structure is in ohmic contact with the first conductive semiconductor layer through the ohmic contact layer.

[0011] Preferably, the ohmic contact layer is located between the electrical connection structure and the first conductive type semiconductor body, and is located on a portion of the first surface of the first conductive type semiconductor layer.

[0012] Preferably, the thickness of the ohmic contact layer is less than or equal to 600 nm.

[0013] Preferably, the ohmic contact layer comprises gallium arsenide.

[0014] More preferably, the doping concentration of the gallium arsenide material is 3E18-5E18.

[0015] Preferably, the contact resistance between the first conductive semiconductor layer and the electrical connection structure is greater than the contact resistance between the ohmic contact layer and the electrical connection structure.

[0016] Preferably, except for the area covered by the electrical connection structure, the material of the remaining area of ​​the first surface of the first conductive semiconductor layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

[0017] Preferably, the electrical connection structure is divided into two sections, and the first section of the electrical connection structure fills the first section of the through hole and extends onto the first surface of the first conductive type semiconductor layer.

[0018] Preferably, the second section of the electrical connection structure fills the second section of the through hole and is electrically connected to the first electrode metal layer.

[0019] Preferably, the material of the first section of the electrical connection structure is one or more of AuGe, Au, AuGeNi, Ni, Pt, Ti or Ag.

[0020] Preferably, a material of the second electrical connection structure is one or more of Au, Pt, Ti, Ag, Sn, Ni, AuSn, NiSn or AgSn.

[0021] Preferably, it further comprises a second electrode metal layer, which is located between the second conductive type semiconductor layer and the first electrode metal layer and is electrically connected to the second conductive type semiconductor layer.

[0022] Preferably, the second electrode metal layer includes a pad forming portion, on which no semiconductor epitaxial stack is arranged, and the semiconductor light emitting element further includes a front electrode, which is formed on the pad forming portion.

[0023] Preferably, it further comprises a second insulating layer, which is located between the first electrode metal layer and the second electrode metal layer and is used for insulating and isolating the first electrode metal layer and the second electrode metal layer.

[0024] Preferably, it also includes a substrate arranged on the first electrode metal layer.

[0025] The present invention also proposes another semiconductor light-emitting element, comprising a semiconductor epitaxial stack, having a first surface and a second surface opposite to the first surface, comprising a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer providing the first surface, and the second conductive semiconductor layer providing the second surface; a through hole, at least penetrating the first conductive semiconductor layer, the second conductive semiconductor layer and the active layer of the semiconductor epitaxial stack; an electrical connection structure, arranged in the through hole, the electrical connection structure in contact with the first conductive semiconductor layer; a first electrode metal layer, arranged on the second surface of the semiconductor epitaxial stack, and connected to the electrical connection structure; characterized in that: at least one section of the through hole exposes the first conductive semiconductor layer, so that the electrical connection structure is electrically connected to the first conductive semiconductor layer in the through hole, and the angle between the side wall of the first section of the through hole and the first surface of the semiconductor epitaxial stack is θ1, 0°<θ1≤90°.

[0026] Preferably, it further comprises a second section of through holes leaking out of the second conductive semiconductor layer and the active layer, the included angle between the sidewall of the second section of through holes and the second surface of the second conductive semiconductor layer is θ2, 30°≤θ2<90°.

[0027] Preferably, the electrical connection structure is not electrically connected to the second conductive type semiconductor layer and the active layer, and a sidewall insulating layer is provided between the electrical connection structure and the second conductive type semiconductor layer and the active layer.

[0028] Preferably, the electrical connection structure is divided into two sections, the first section of the electrical connection structure fills the first section of the through hole, and the second section of the electrical connection structure fills the second section of the through hole and is electrically connected to the first electrode metal layer.

[0029] Preferably, it further comprises a second electrode metal layer, which is located between the second conductive type semiconductor layer and the first electrode metal layer and is electrically connected to the second conductive type semiconductor layer.

[0030] Preferably, the second electrode metal layer includes a pad forming portion, on which no semiconductor epitaxial stack is arranged, and the semiconductor light emitting element further includes a front electrode, which is formed on the pad forming portion.

[0031] Preferably, it further comprises a second insulating layer, which is located between the first electrode metal layer and the second electrode metal layer and is used for insulating and isolating the first electrode metal layer and the second electrode metal layer.

[0032] Preferably, it also includes a substrate arranged on the first electrode metal layer.

[0033] The present invention also provides a semiconductor light emitting element package, comprising a mounting substrate and at least one semiconductor light emitting element mounted on the mounting substrate, characterized in that at least one or more or all of the semiconductor light emitting elements are any one of the aforementioned semiconductor light emitting elements.

[0034] The present invention also provides a light emitting device comprising any one of the aforementioned semiconductor light emitting elements.

[0035] The semiconductor light emitting element provided by the present invention has the following beneficial effects:

[0036] 1. It can improve the uniformity of current expansion of semiconductor light-emitting elements, enhance the uniformity of luminous brightness of semiconductor light-emitting elements, and enhance the luminous efficiency of semiconductor light-emitting elements.

[0037] 2. The semiconductor light-emitting element has a through hole, and the side wall of the through hole has an inclined angle, which is beneficial for the light radiated from the active layer to hit the inclined surface. The light can be reflected upward and radiated from the light-emitting side, thereby reducing the number of times the light bounces in the epitaxial layer and reducing the probability of light being absorbed in the epitaxial layer, thereby improving the light extraction efficiency and enhancing the luminous brightness of the semiconductor light-emitting element.

[0038] 3. The through hole of the semiconductor light emitting element is divided into multiple sections, which can reduce the aperture of the through hole, thereby reducing the area of ​​the light emitting layer sacrificed by digging the hole, and reducing the loss of light emitting brightness caused by the opening.

[0039] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0040] Although the present invention will be described below in conjunction with some exemplary implementations and methods of use, it should be understood by those skilled in the art that it is not intended to limit the present invention to these embodiments. On the contrary, it is intended to cover all substitutes, modifications and equivalents within the spirit and scope of the present invention as defined in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In addition, the accompanying drawings are description summaries and are not drawn to scale.

[0042] Figure 1 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 1.

[0043] Figure 2It is a schematic top view of the semiconductor light emitting element mentioned in Example 1.

[0044] Figure 3 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 2.

[0045] Figure 4 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 3.

[0046] Figure 5 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 4.

[0047] Figure 6 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 5.

[0048] Figure 7 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 6.

[0049] Figure 8 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 7.

[0050] Fig. 9 It is a cross-sectional schematic diagram of the semiconductor light emitting element mentioned in Example 8.

[0051] Fig.10 It is a cross-sectional schematic diagram of the package of the semiconductor light emitting element mentioned in Example 9.

[0052] In the figure: 100: substrate; L: semiconductor epitaxial stack; S1: first surface of semiconductor epitaxial stack; S2: second surface of semiconductor epitaxial stack; 102: first conductive type semiconductor layer; 103: active layer; 104: second conductive type semiconductor layer; H: through hole; 105: dielectric layer; 106: second electrode metal layer; 107: sidewall insulating layer; 108: second insulating layer; 109: electrical connection structure; 109a: first section of electrical connection structure; 109b: second section of electrical connection structure; 110: first electrode metal layer; 120: first electrode; 130: second electrode; 10: semiconductor light emitting element; 30: mounting substrate; 301: first electrode terminal of mounting substrate; 302: second electrode terminal of mounting substrate; 303: wire; 304: sealing resin; θ1: angle between side wall of first section through hole and first surface; θ2: angle between side wall of second section through hole and second surface. DETAILED DESCRIPTION

[0053] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details of the present invention can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0055] Embodiment 1:

[0056] The present invention provides a semiconductor light emitting element as follows: Figure 1 The cross-sectional schematic diagram shown includes the following stacked layers: 100: substrate; L: semiconductor epitaxial stack; 102: first conductive semiconductor layer; 103: active layer; 104: second conductive semiconductor layer; 105: dielectric layer; 106: second electrode metal layer; 107: sidewall insulating layer; 108: second insulating layer; 109: electrical connection structure; 109a: first section of the electrical connection structure; 109b: second section of the electrical connection structure; 110: first electrode metal layer; 120: first electrode; 130: second electrode.

[0057] Each structural stacking layer is described in detail below.

[0058] The substrate 100 is a conductive substrate, which may be silicon, silicon carbide, or a metal substrate, and the metal substrate is preferably a copper, tungsten, or molybdenum substrate. The substrate 100 may have a thickness of about 50 μm to about 300 μm.

[0059] The semiconductor stack L has a first surface S1 and a second surface S2 opposite to the first surface, and includes a first conductive semiconductor layer 102, a second conductive semiconductor layer 104, and an active layer 103 between the first conductive semiconductor layer 102 and the second conductive semiconductor layer 104. The first conductive semiconductor layer 102 provides the first surface S1, and the second conductive semiconductor layer 104 provides the second surface S2. The first conductive semiconductor layer 102 and the second conductive semiconductor layer 104 can be respectively doped with n-type or p-type to achieve a material layer that at least provides electrons or holes. The n-type semiconductor layer can be doped with n-type dopants such as Si, Ge, or Sn, and the p-type semiconductor layer can be doped with p-type dopants such as Mg, Zn, Ca, Sr, or Ba.

[0060] The first conductive semiconductor layer 102, the active layer 103, and the second conductive semiconductor layer 104 can be made of materials such as aluminum gallium indium nitride, gallium nitride, aluminum gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, gallium arsenide, or aluminum gallium arsenide. The first conductive semiconductor layer 102 or the second conductive semiconductor layer 104 includes a cover layer that provides electrons or holes and may include other layer materials, such as a current spreading layer, a window layer, or an ohmic contact layer, etc., which are set to different multilayers according to different doping concentrations or component contents. The active layer 103 is a region that provides light radiation for the recombination of electrons and holes, and different materials can be selected according to different luminous wavelengths. The active layer 103 can be a periodic structure of a single quantum well or a multiple quantum well. By adjusting the composition ratio of the semiconductor material in the active layer 103, it is expected to radiate light of different wavelengths. In this embodiment, the active layer 103 material is preferably aluminum gallium indium phosphide or aluminum gallium arsenic material. The active layer can radiate red light or infrared light.

[0061] The semiconductor light emitting element further includes a through hole H, wherein the through hole H at least penetrates the first conductive type semiconductor layer 102, the second conductive type semiconductor layer 104 and the active layer 103 of the semiconductor epitaxial stack. Figure 1 As shown, the through hole H penetrates the entire semiconductor epitaxial stack L. There is at least one through hole H, which can be evenly or non-uniformly distributed in the semiconductor epitaxial stack L. Figure 2 is a top view of the semiconductor light emitting element described in Example 1, as shown Figure 2 As shown, the through hole H can evenly disperse the current in the semiconductor epitaxial stack L, thereby improving the uniformity of current distribution of the semiconductor light-emitting element, and improving the uniformity and light-emitting efficiency of the semiconductor light-emitting element.

[0062] At least one section of the through hole H exposes the first conductive semiconductor layer 102, so that the electrical connection structure 109 contacts the first conductive semiconductor layer 102 in the through hole, and the angle between the side wall of the first section of the through hole and the first surface S1 of the semiconductor epitaxial stack is θ1, 0°<θ1≤90°. In some embodiments, it is preferred that the angle between the side wall of the first section of the through hole and the first surface S1 of the semiconductor epitaxial stack is in the range of 45° to 90°. In some embodiments, the first section of the through hole may expose part of the side wall of the first conductive semiconductor layer 102. In some embodiments, the first section of the through hole may expose the entire side wall of the first conductive semiconductor layer 102.

[0063] The semiconductor light emitting element further comprises a second section through hole leaking out of the second conductive semiconductor layer 104 and the active layer 103, the angle between the sidewall of the second section through hole and the second surface S2 of the semiconductor epitaxial stack is θ2, 30°≤θ2<90°. In some embodiments, the angle between the second section H2 of the through hole and the second surface S2 of the semiconductor epitaxial stack is preferably 30° to 45°.

[0064] The side wall of the second section of the through hole is set to have a certain inclination angle, which is beneficial for the light radiated from the active layer 103 to hit the surface with the inclination angle. The light can be reflected upward and radiated from the light-emitting side, thereby reducing the number of times the light bounces in the epitaxial layer and reducing the probability of light being absorbed in the epitaxial layer, thereby improving the light extraction efficiency and enhancing the luminous brightness of the semiconductor light-emitting element.

[0065] The through hole is arranged in multiple sections, which is beneficial to the operation of the process. Compared with the through hole arranged in one section, the through hole can be arranged in a smaller size, which can reduce the area of ​​the sacrificed light-emitting layer, thereby reducing the loss of light-emitting brightness caused by the loss of light-emitting area caused by digging holes.

[0066] The electrical connection structure 109 is disposed in the through hole H and extends to the first surface S1 of the first conductive semiconductor layer 102 to form an electrical connection with the first surface S1 of the first conductive semiconductor layer 102. The electrical connection structure 109 is not electrically connected to the second conductive semiconductor layer 104 and the active layer 103, and a sidewall insulating layer 107 is disposed between the electrical connection structure 109 and the second conductive semiconductor layer 104 and the active layer 103.

[0067] The electrical connection structure 109 is divided into two sections, and the first section of the electrical connection structure 109a fills the first section of the through hole H and extends to the first surface of the first conductive semiconductor layer 102. The material of the first section of the electrical connection structure is one or more of AuGe, Au, AuGeNi, Ni, Pt, Ti or Ag.

[0068] The surface of the first conductive semiconductor layer 102 further includes an ohmic contact layer 111, which is used for ohmic contact between the electrical connection structure 109a and the first conductive semiconductor layer 102. The ohmic contact layer 111 exists between the first section 109a of the electrical connection structure and the first conductive semiconductor layer 102, and exists only on a portion of the first surface of the first conductive semiconductor layer 102. The thickness of the ohmic contact layer 111 is less than or equal to 600nm. In some embodiments, the thickness of the ohmic contact layer 111 is preferably less than or equal to 300nm. In this embodiment, the ohmic contact layer 111 is preferably gallium arsenide. In order to better perform ohmic contact, it is more preferred that the doping concentration of the gallium arsenide material is 3E18 to 5E18. Since the highly doped gallium arsenide material has a light absorption effect, in some embodiments, it is preferred that the highly doped gallium arsenide material only exists on a portion of the first surface of the first conductive semiconductor layer 102, and is located between the first section 109a of the electrical connection structure and the first conductive semiconductor body 102. The thickness of the highly doped gallium arsenide is less than or equal to 600nm. In some embodiments, the thickness of the highly doped gallium arsenide material is preferably less than or equal to 300nm. The contact resistance between the first conductive semiconductor layer 102 and the first section 109a of the electrical connection structure is greater than the contact resistance between the highly doped aluminum gallium material and the electrical connection structure; the first section 109a of the electrical connection structure achieves ohmic contact with the first conductive semiconductor layer 102 through the ohmic contact layer 111. The first section 109a of the electrical connection structure covers part of the first surface of the first conductive semiconductor layer. Except for the area covered by the electrical connection structure 109a, the material of the remaining area of ​​the first surface of the first conductive semiconductor layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

[0069] The second section 109b of the electrical connection structure fills the second section of the through hole H and is electrically connected to the first electrode metal layer. The material of the second section electrical connection layer is one or more of Au, Pt, Ti, Ag, Sn, Ni, AuSn, NiSn or AgSn.

[0070] A sidewall insulating layer 107 is also included between the second section of the electrical connection layer 109b and the second conductive semiconductor layer 102 and the active layer 103, which is used to insulate and isolate the second section 109b of the electrical connection structure from the second conductive semiconductor layer 104 and the active layer 103. The sidewall insulating layer 107 can be composed of at least one of fluoride, nitride or oxide, and specifically at least one of ZnO, SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiOx, MgF or GaF. The sidewall of the through hole is set to have a certain inclination angle, and the insulating film layer prepared by the evaporation method can maintain uniformity and integrity, so that the insulating film layer can evenly cover the sidewalls of the active layer 103 and the second conductive semiconductor layer 104, thereby achieving a better insulation and isolation of the electrical connection layer 109 and the active layer 103 and the second conductive semiconductor layer 104.

[0071] The first electrode metal layer 110 is located on the second surface S2 of the semiconductor epitaxial stack and is electrically connected to the second section 109b of the electrical connection structure. The first electrode metal layer 110 bonds the semiconductor epitaxial stack L to the substrate 100. The material of the first electrode metal layer can be one or more of Au, Pt, Ti, Ag, Sn, Ni, AuSn, NiSn or AgSn.

[0072] The second electrode metal layer 106 is located on the second surface of the semiconductor stacked crystal layer and is electrically connected to the second conductive semiconductor layer. The second electrode metal layer at least includes a metal reflective layer (not shown in the figure), which can reflect the light radiated from the semiconductor stacked crystal layer L toward the substrate 100 side back to the semiconductor stacked crystal layer L and radiate it from the light-emitting side. The metal reflective layer can be a single layer or a multi-layer structure, and can be formed of a metal or alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

[0073] The second electrode metal layer 106 includes a pad forming portion, on which the semiconductor epitaxial stack L is not provided, and the semiconductor light emitting element includes a second electrode 130, which is formed on the pad forming portion. The second electrode 130 is electrically connected to the second conductive semiconductor layer 104. The second electrode 130 mainly includes a pad portion, which is mainly used for external wiring during packaging. The pad of the second electrode 130 can be designed into different shapes according to actual wiring needs, such as a cylindrical shape, a square shape, or other polygonal shapes.

[0074] The dielectric layer 105 is located between the second conductive semiconductor layer 104 and the second electrode metal layer, and the dielectric layer 105 has a plurality of through openings. The through openings are evenly or unevenly distributed on the second surface of the second conductive semiconductor layer 104. A second ohmic contact layer (not shown in the figure) may also be included between the second electrode metal layer 106 and the dielectric layer 105. The second ohmic contact layer forms a plurality of regions ohmically contacting the second conductive semiconductor layer 104 by at least filling the openings of the dielectric layer 105, so as to uniformly transfer the current from the second electrode metal layer 106 to the semiconductor stacking layer L, so that the second ohmic contact layer does not contact the second conductive semiconductor layer 104 side in the form of the whole surface. The second ohmic contact layer may be formed by a transparent conductive layer such as at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO and ATO. The second ohmic contact layer may also use a light-transmitting conductive layer and a metal instead. The metal is preferably an alloy material, such as gold-zinc, gold-germanium, gold-germanium-nickel or gold-beryllium, and the second ohmic contact layer may have a single-layer or multi-layer structure.

[0075] The dielectric layer 105 may be formed of an insulating material having a lower conductivity than the metal reflective layer or the second ohmic contact layer, a material having a low conductivity, or a material that is in Schottky contact with the second conductive semiconductor layer 104. For example, the dielectric layer 105 may be composed of at least one of fluoride, nitride or oxide, specifically at least one of ZnO, SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiOx, MgF or GaF. The dielectric layer 105 is composed of at least one layer or a combination of multiple layers of dielectric layer materials with different refractive indices. The dielectric layer 105 is more preferably a light-transmitting dielectric layer, through which at least 50% of light can pass. More preferably, the refractive index of the dielectric layer 105 is lower than the refractive index of the semiconductor stack L.

[0076] The metal reflective layer and the dielectric layer 105 form an ODR total reflection structure, which returns the light radiated from the semiconductor stacked crystal layer L toward the substrate 100 to the semiconductor stacked crystal layer L and radiates it from the light emitting side, thereby improving the light emitting efficiency.

[0077] The semiconductor light emitting element further includes a first electrode 120, which is electrically connected to the first conductive semiconductor layer 103 through a first electrode metal layer. The first electrode 120 described in this embodiment is formed on the back side of the substrate 100 in the form of a whole surface. The substrate of this embodiment is a conductive supporting substrate. The second electrode 130 and the first electrode 120 are formed on both sides of the substrate 100 to enable current to flow vertically through the semiconductor stacked layers, provide uniform current density, and thus improve the uniformity of light emission of the semiconductor light emitting element.

[0078] The second electrode 130 and the first electrode 120 are preferably made of metal materials.

[0079] A second insulating layer 108 is provided between the second electrode metal layer 106 and the first electrode metal layer 110, for insulating and isolating the second electrode metal layer 106 and the first electrode metal layer 110. The second insulating layer 108 may be composed of at least one of fluoride, nitride or oxide, and specifically at least one of ZnO, SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiOx, MgF or GaF.

[0080] As described above, the semiconductor light-emitting element proposed in the present invention can improve the uniformity of current expansion, enhance the uniformity of the luminous brightness of the semiconductor light-emitting element, and enhance the luminous efficiency of the semiconductor light-emitting element. The through hole is arranged in multiple sections, which is convenient for the operation of the process, can reduce the size of the through hole, and reduce the area of ​​the active layer sacrificed by digging the hole, thereby reducing the loss of brightness; at the same time, the second section of the through hole has an inclined angle, which can reflect the light radiated by the active layer upward and emit it from the light-emitting side, thereby reducing the number of times the light bounces in the epitaxial layer and reducing the probability of light being absorbed in the epitaxial layer, thereby improving the light extraction efficiency and enhancing the luminous brightness of the semiconductor light-emitting element.

[0081] Embodiment 2

[0082] In this embodiment, Figure 3 As shown, the difference from Example 1 is that in Example 1, the upper surface of the first conductive semiconductor layer is smooth, and in Example 2, except for the area covered by the electrical connection structure, the remaining area of ​​the first surface of the first conductive semiconductor layer has a roughened structure. By roughening the remaining area of ​​the first surface of the first conductive semiconductor layer, the light output of the semiconductor light-emitting element can be increased, thereby improving the luminous efficiency of the semiconductor light-emitting element.

[0083] Embodiment 3

[0084] In this embodiment, Figure 4As shown, the difference from Example 1 is that the first section of the through hole in Example 1 has a certain inclination angle, and the first section of the through hole in Example 3 is set to be vertical, and the first section of the through hole exposes the first conductive semiconductor layer 102. This segmented setting of the through hole is convenient for process operation, can reduce the aperture of the through hole, reduce the area of ​​the sacrificed light-emitting area caused by digging the hole, and reduce the brightness loss of the semiconductor light-emitting element; at the same time, this through hole setting can improve the uniformity of current distribution, thereby improving the uniformity of the luminous brightness and the luminous efficiency of the semiconductor light-emitting element.

[0085] Embodiment 4

[0086] In this embodiment, Figure 5 As shown, the difference from the third embodiment is that the first surface of the first conductive semiconductor layer 102, except for the area covered by the first section 109a of the electrical connection structure, can have a roughened structure, which can improve the light extraction efficiency of the semiconductor light-emitting element, thereby improving the luminous efficiency of the semiconductor light-emitting element.

[0087] Embodiment 5

[0088] like Figure 6 As shown, the difference from the third embodiment is that the electrical connection structure 109a covers a portion of the first surface of the first conductive semiconductor layer 102, and the first section 109a of the electrical connection structure in this embodiment fills the first part of the through hole H, and forms an electrical connection with the first conductive semiconductor layer 102 exposed by the through hole H. In this embodiment, the material of the semiconductor light emitting element is preferably an AlInGaN material system, and the electrical connection structure can form an electrical connection with the first conductive semiconductor layer 102 exposed by the first section of the through hole H.

[0089] Embodiment 6

[0090] like Figure 7 As shown, the difference from Example 5 is that the first surface of the first conductive semiconductor layer 102, except for the area covered by the first section 109a of the electrical connection structure, can have a roughened structure, which can improve the light extraction efficiency of the semiconductor light-emitting element, thereby improving the luminous efficiency of the semiconductor light-emitting element.

[0091] Embodiment 7

[0092] like Figure 8 As shown, the difference from the first embodiment is that this embodiment is a horizontal vertical structure, and the first electrode is located as shown in FIG. Figure 8 In this embodiment, the substrate 100 is preferably AlN, Al 2 O 3, SiC, Si, MO or polymer, etc. The through hole arrangement of the semiconductor light emitting element proposed in the present invention can improve the uniformity of current expansion of the semiconductor light emitting element, and improve the uniformity of luminous brightness and luminous efficiency of the semiconductor light emitting element.

[0093] Embodiment 8

[0094] like Fig. 9 As shown, the difference from Example 7 is that in this embodiment, the first surface of the first conductive semiconductor layer 102 can have a roughened structure except for the area covered by the first section 109a of the electrical connection structure. The roughened structure can improve the light collection efficiency of the semiconductor light-emitting element, thereby improving the luminous efficiency of the semiconductor light-emitting element.

[0095] Embodiment 9

[0096] The semiconductor light emitting element provided by the present invention can be widely used in high-power products, such as projectors, stage lights, flashlights, endoscopes, etc.

[0097] Specifically, this embodiment provides Fig.10 The package shown in the figure includes a mounting substrate 30, a semiconductor light emitting element 10 and a sealing resin 304. At least one semiconductor light emitting element in the aforementioned embodiments is mounted on the mounting substrate 30, and the mounting substrate 30 can be set as a printed circuit board (PCB), such as a metal core printed circuit board (MCPCB), a metal printed circuit board (MPCB) or a flexible printed circuit board (FPCB). One surface of the mounting substrate 30 has an electrically isolated first electrode terminal 301 and a second electrode terminal 302. The semiconductor light emitting element 10 is located on a surface of the mounting substrate 30 and is electrically connected to the mounting substrate 30 through a wire 303. The sealing resin 304 may include a wavelength conversion material, such as a phosphor and / or a quantum dot. The sealing resin 304 has a dome-shaped lens structure, which has an upper convex surface, and the orientation angle of the emitted light can be adjusted by introducing different structures.

[0098] It should be noted that the above implementation modes are only used to illustrate the present invention, and are not used to limit the present invention. Those skilled in the art can make various modifications and changes to the present invention without departing from the spirit and scope of the present invention. Therefore, all equivalent technical solutions also belong to the scope of the present invention. The scope of patent protection of the present invention should be limited to the scope of the claims.

Claims

1. A semiconductor light emitting element, comprising A semiconductor epitaxial stack having a first surface and a second surface opposite to the first surface, comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer provides the first surface and the second conductive type semiconductor layer provides the second surface; a through hole at least penetrating the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer of the semiconductor epitaxial stack; an electrical connection structure, disposed in the through hole, the electrical connection structure extending to the first surface of the first conductive type semiconductor layer to form an electrical connection with the first conductive type semiconductor layer; A first electrode metal layer is arranged on the second surface of the semiconductor epitaxial stack and is connected to the electrical connection structure; it is characterized in that: it also includes an ohmic contact layer, the ohmic contact layer is located on a partial area of ​​the first surface of the first conductive semiconductor layer, and the electrical connection structure is in ohmic contact with the first conductive semiconductor layer through the ohmic contact layer; it contains at least a first section of through holes exposing the first conductive semiconductor layer, so that the electrical connection structure is in contact with the first conductive semiconductor layer in the through holes, and the angle between the side wall of the first section of the through holes and the first surface of the semiconductor epitaxial stack is θ1, 0°<θ1≤90°; it also includes a second section of through holes leaking out the second conductive semiconductor layer and the active layer, and the angle between the side wall of the second section of the through holes and the second surface of the second conductive semiconductor layer is θ2, 30°≤θ2<90°.

2. A semiconductor light emitting element according to claim 1, characterized in that: The electrical connection structure is located on a partial area of ​​the first surface of the first conductive semiconductor layer.

3. A semiconductor light emitting element according to claim 1, characterized in that: The thickness of the ohmic contact layer is less than or equal to 600 nm.

4. A semiconductor light emitting element according to claim 1, characterized in that: The ohmic contact layer includes gallium arsenide, and the doping concentration of the gallium arsenide material is 3E18-5E18.

5. A semiconductor light emitting element according to claim 1, characterized in that: Except for the area covered by the electrical connection structure, the material of the remaining area of ​​the first surface of the first conductive semiconductor layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

6. A semiconductor light emitting element according to claim 1, characterized in that: The material of the active layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

7. A semiconductor light emitting element according to claim 1, characterized in that: The sidewall of the through hole is not covered with the ohmic contact layer.

8. The semiconductor light emitting element according to claim 1, characterized in that: The electrical connection structure is not electrically connected to the second conductive type semiconductor layer and the active layer, and a sidewall insulating layer is provided between the electrical connection structure and the second conductive type semiconductor layer and the active layer.

9. A semiconductor light emitting element according to claim 8, characterized in that: The surface of the sidewall insulating layer is not covered with the ohmic contact layer.

10. The semiconductor light emitting element according to claim 1, characterized in that: The electrical connection structure includes a first section of the electrical connection structure and a second section of the electrical connection structure. The first section of the electrical connection structure fills the first section of the through hole and extends onto the first surface of the first conductive semiconductor layer.

11. A semiconductor light emitting element according to claim 1, characterized in that: The second section of the electrical connection structure fills the second section of the through hole and is electrically connected to the first electrode metal layer.

12. The semiconductor light emitting element according to claim 10, characterized in that: The material of the first electrical connection structure is one or more of AuGe, Au, AuGeNi, Ni, Pt, Ti or Ag; the material of the second electrical connection structure is one or more of Au, Pt, Ti, Ag, Sn, Ni, AuSn, NiSn or AgSn.

13. A semiconductor light emitting element comprising A semiconductor epitaxial stack having a first surface and a second surface opposite to the first surface, comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer located between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer provides the first surface and the second conductive type semiconductor layer provides the second surface; a through hole at least penetrating the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer of the semiconductor epitaxial stack; an electrical connection structure, disposed in the through hole, the electrical connection structure extending to the first surface of the first conductive type semiconductor layer to form an electrical connection with the first conductive type semiconductor layer; A first electrode metal layer is arranged on the second surface of the semiconductor epitaxial stack and is connected to the electrical connection structure; it is characterized in that: it also includes an ohmic contact layer, the ohmic contact layer is located on part of the first surface of the first conductive semiconductor layer, and the electrical connection structure covers the entire ohmic contact layer; it contains at least a first section of through holes exposing the first conductive semiconductor layer, so that the electrical connection structure contacts the first conductive semiconductor layer in the through holes, and the angle between the side wall of the first section of the through holes and the first surface of the semiconductor epitaxial stack is θ1, 0°<θ1≤90°; it also includes a second section of through holes leaking out the second conductive semiconductor layer and the active layer, and the angle between the side wall of the second section of the through holes and the second surface of the second conductive semiconductor layer is θ2, 30°≤θ2<90°.

14. A semiconductor light emitting element according to claim 13, characterized in that: The thickness of the ohmic contact layer is less than or equal to 600 nm.

15. The semiconductor light emitting element according to claim 13, characterized in that: The ohmic contact layer contains gallium arsenide; the doping concentration of the gallium arsenide material is 3E18-5E18.

16. The semiconductor light emitting element according to claim 13, characterized in that: Except for the area covered by the electrical connection structure, the material of the remaining area of ​​the first surface of the first conductive semiconductor layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

17. A semiconductor light emitting element according to claim 13, characterized in that: The material of the active layer is aluminum gallium indium phosphide or aluminum gallium arsenic material.

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