100 results about "Ultra short pulse" patented technology

The invention belongs to the technical field of optics, and particularly relates to a terahertz radiation source system of an air plasma antenna, which comprises a laser, an air plasma generation unit, a terahertz radiation generation unit, a terahertz waveguide and transmission system, a detection analysis unit and a control synchronization system, the laser device is a high-power femtosecond laser device and is used for generating ultra-short pulse laser, the pulses can excite plasma in the air, and the problem that a traditional photoconductive antenna terahertz source is low in terahertz radiation intensity due to limitation of a material damage threshold value is solved; the bandwidth of terahertz radiation can be regulated and controlled by adjusting the distance between the plasma antennas, and the interval time of switching on the plasma antennas can be controlled by controlling the delay time of the third beam of laser, so that the regulation and control of the terahertz wave intensity are realized.

The invention relates to the field of material surface treatment, and discloses a silica gel and metal combined treatment process which comprises the following steps: S1, ultra-short pulse laser is adopted to machine a three-dimensional micro-nano composite structure on the surface of a titanium alloy, the structure comprises a periodic groove array and surface nano holes, and the surface roughness Ra of the titanium alloy is larger than or equal to 5 microns; and S2, a titanium nitride transition layer and a siloxane self-assembly molecular layer are sequentially formed on the roughened titanium alloy surface through atomic layer deposition, and a gradient chemical interface is formed. According to the method, the micro-nano composite structure is processed through ultra-short pulse laser, the interface mechanical embedding area is remarkably increased, the two-dimensional rough limitation of a traditional sand blasting process is broken through, deep barb-shaped anchoring is achieved, the anti-stripping capacity is greatly enhanced, gradient chemical bonding is formed by the atomic layer deposition titanium nitride transition layer and the amino self-assembly molecular layer, and the anti-stripping performance is improved. The thermal expansion difference is effectively buffered, and the interface high-temperature resistance is improved.

The invention relates to the technical field of anti-counterfeiting mark manufacturing and detection, in particular to a white spirit bottle cap anti-counterfeiting mark manufacturing method based on laser miniature carving and a detection device.The white spirit bottle cap anti-counterfeiting mark manufacturing method comprises the steps that S1, on the basis of the micro-nano optical principle, micro-nano structure parameters containing periodic grooves and protrusions are generated through algorithm optimization; s2, according to the micro-nano structure parameters, an engraving path file matched with ultra-short pulse laser equipment is generated; when the white spirit bottle cap anti-counterfeiting mark is used, through the micro-nano structure design and multi-angle dynamic information display, the anti-counterfeiting mark has extremely high complexity and uniqueness, the counterfeiting difficulty and the counterfeiting cost are greatly increased, the anti-counterfeiting performance of the white spirit bottle cap can be improved, the dynamic change characteristics of the anti-counterfeiting mark are captured through multi-angle imaging, and the anti-counterfeiting mark has good anti-counterfeiting effect. The micro-nano spectrum analysis module detects the authenticity of the micro-nano structure from the microscopic level, and the micro-nano spectrum analysis module and the micro-nano structure complement each other, so that the accuracy and reliability of detection can be remarkably improved, and the possibility of misjudgment and missed judgment can be reduced.

The invention discloses a laser-chemical composite surface planarization process based on a laser stripping sheet. The method comprises the following steps: firstly, carrying out surface scanning on the surface of a wafer subjected to laser-ultrasonic stripping by adopting femtosecond laser, thinning the wafer to a first target thickness through an ultra-short pulse cold working mechanism, and optimizing the sharp corner fluctuation of the surface at the same time; then immersing the wafer into a hydrofluoric acid-nitric acid mixed solution containing a platinum / iridium catalyst, accurately etching the residual sharp corner by utilizing a selective catalytic reaction of a contact point of a catalyst plate and the wafer, and feeding back and adjusting processing parameters in real time through a morphology monitoring module and an infrared thermal imaging system; and finally, thinning to the required thickness by adopting chemical mechanical polishing, and obtaining an atomic-scale flat surface. According to the technology, through the synergistic effect of laser pre-thinning and chemical etching, the problems that a traditional grinding technology is low in efficiency and large in material consumption are solved, and the technology has the advantages of being efficient, low in damage, high in precision and the like and is suitable for surface treatment of hard semiconductor wafers such as silicon carbide and gallium nitride.

Disclosed is an optical system for laser machining that enables simpler and more reliable machining of several patterns simultaneously on the same part. The system comprises an ultra-short pulse laser source for generating a source laser beam; a device with a separation means for separating a source laser beam into a plurality of separated laser beams, such that each of the separated laser beams is directed in a direction of propagation specific thereto; a spatial offsetting unit for obtaining, from the plurality of separated laser beams, a plurality of offset laser beams such that each offset laser beam can propagate around a main axis of propagation A specific thereto and is capable of describing a movement around the main axis of propagation A; and a focusing means configured to focus each offset laser beam on a workpiece in the direction of the axis of propagation specific thereto.

The application belongs to the technical field of semiconductor power devices, and particularly discloses a method for laser stripping gallium oxide. The method is characterized in that a super-short pulse laser with a predetermined wavelength is irradiated into the gallium oxide, and a two-photon absorption process occurs when the laser is focused at a position with a specific thickness from the surface. The high temperature generated in the process causes thermal decomposition of the gallium oxide, thereby achieving the purpose of stripping the gallium oxide. Compared with the traditional substrate cutting technology, the stripping method can significantly reduce the cutting consumption of the gallium oxide substrate, and the cut substrate can be reused after polishing, which helps to reduce the manufacturing cost of the gallium oxide device.

Methods and systems for the generation of non-lethal and lethal effects using ultra-short pulse lasers. A laser source generates pulses at the direction of a controller and directs the pulses along an optical path to one or more high-speed beam steering devices, also directed by the controller, which then directs the laser pulses to achieve the desired effects. A computerized controller receives a specification of one or more desired effects for one or more targets and calculates a distribution of ultra-short laser pulses as well as the required characteristics for each of the pulses.

The invention discloses a high-temperature-resistant metal honeycomb equipment forming method which comprises the following steps: S1, performing blanking calculation, extracting a single corrugated plate in a metal honeycomb core body, and unfolding the single corrugated plate according to an equal length principle so as to determine size parameters of a pre-connected area and a to-be-stretched area; s2, chemical oil removal is conducted, specifically, the surface of the metal foil is treated, stains and oxide films on the surface of the metal foil are removed, the subsequent resistance welding strength is improved, and the situation of welding breakage during stretching is avoided; s3, surface activation is conducted, specifically, a mechanical-chemical synergistic process is adopted, silicon carbide abrasive paper is adopted for polishing the metal foil, the surface roughness Ra value of the metal foil is reduced, the specific surface area is increased, the contact angle is reduced, and finally drying treatment is conducted; and S4, material cutting is conducted, specifically, an ultra-short pulse laser cutting technology is adopted for metal foil machining, and the allowance of 10 mm is reserved so that the foil can be fixed. The stretching parameters can be flexibly adjusted according to different curvature requirements, and the preparation problem of the honeycomb core in a complex shape is successfully solved.

The invention provides a diamond / metal connector and a brazing method thereof based on femtosecond laser modification, and relates to the technical field of material processing and connection.The method for brazing diamond and metal based on femtosecond laser modification comprises the steps that femtosecond laser is adopted to conduct scanning treatment on the surface of diamond, so that a graphite layer is formed on the surface of the diamond; performing magnetron sputtering of active elements on the surface of the graphite layer to deposit an active layer; and vacuum heat treatment is conducted at the temperature of 500-800 DEG C, and then the diamond and the metal are brazed. Due to the ultra-short pulse and ultra-high peak power characteristics of the femtosecond laser, non-hot-melting accurate etching of the diamond surface can be achieved, sp3 carbon is induced to be converted into sp2 graphite phase, a nano-graphite transition layer is controllably formed, the surface chemical activity is remarkably improved, the chemical bonding strength of an active element layer and the diamond is remarkably enhanced, and the service life of the diamond is prolonged. And the active element reacts with the nano-graphite layer to generate a continuous active element-C compound, so that strong metallurgical bonding is realized.

The invention discloses an ultrahigh repetition frequency adjustable ultrashort pulse cluster generator which comprises a mode-locked fiber laser, a first fiber coupler, a fiber delay line, a dispersion compensation fiber, a second fiber coupler, a fiber amplifier and an acousto-optic modulator. The first optical fiber coupler, the optical fiber delay line, the dispersion compensation optical fiber, the second optical fiber coupler and the optical fiber amplifier are sequentially connected end to end to form an optical fiber annular cavity, and the annular cavity is used as a frequency increasing device for pulse multiplication; the length difference between the optical fiber annular cavity and a mode-locked cavity in the mode-locked optical fiber laser is adjusted through the optical fiber delay line, and frequency increasing is carried out by using a vernier effect generated by time delay; the ultrahigh repetition frequency ultrashort pulse cluster laser output with adjustable parameters is realized through gain adjustment in the optical fiber annular cavity and synchronous pulse pickup outside the cavity. According to the technical scheme, the structural design is reasonable, the structure is simple, stability is good, sub-pulses are strictly equidistant, parameters are flexible and adjustable, and practicability is good.

The embodiment of the application provides a kind of super-short pulse X-ray excited magnetic particle acoustic imaging method and system, the system includes: X-ray signal transmitting module, for responding to control instruction, control X-ray generator generates the X-ray pulse of preset parameter, so that the X-ray pulse acts on the magnetic particle mark region of pre-setting;Magnetic field modulation module is used to modulate the magnetic field of the magnetic particle mark region to make the X-ray pulse act on magnetic particle and produce original acoustic signal matched with magnetic field modulation;Acoustic detection module is used to convert the original acoustic signal into original data signal;Signal processing module is used to receive the original data signal, and the original data signal is processed to obtain imaging result.The super-short pulse X-ray excited magnetic particle acoustic imaging method and system of the application can meet long-term monitoring demand, effectively distinguish between viable cells and free magnetic particles, avoid misjudgment, and provide complete information for diagnosis and treatment.

The present invention provides an optical member and a method for manufacturing the same, the method comprising: a removal step for partially removing an antireflection film having a multilayer structure in which a low-refractive-index layer and a high-refractive-index layer are laminated, the antireflection film being formed so as to cover an optical surface of an optical substrate, by irradiation with an ultra-short pulse laser light, and performing non-heat processing on the antireflection film by irradiation with an ultra-short pulse laser light to form an antireflection film having a multilayer structure in which a low-refractive-index layer and a high-refractive-index layer are laminated; the pulse width of the ultra-short pulse laser is 0.1 picosecond or more and less than 100 picoseconds, and in the removal step, the ultra-short pulse laser is irradiated to remove the low refractive index layer, which is the outermost layer of the multilayer structure, or the low refractive index layer, which is the outermost layer, and the conductive layer, which is a layer immediately adjacent to the low refractive index layer. The non-heating processing is a processing for suppressing thermal damage to the high refractive index layer, which is a lower layer of the conductive layer, and the processing for suppressing thermal damage is a processing in which the ratio t1 / t2 of the thickness t1 of a portion removed by the removal step to the thickness t2 of a portion not removed in the high refractive index layer is within the range of 0.90-1.00.

The invention provides an ultra-short and ultra-strong laser pulse measuring device and an optical time-space coupling distortion measuring and data processing method based on the device. The device comprises an ultra-short and ultra-strong pulse laser system to be measured, an attenuation module, a beam splitter, a spectral phase measurement unit, a reflector, a micro-lens array, a binary intensity coding plate, a lens, a precision displacement platform, a dispersion element, an imaging lens and a CCD (Charge Coupled Device). The device and the method can be applied to quantitative measurement of ultrashort pulse light space-time coupling distortion.

The invention discloses polycrystalline diamond defect detection and repair equipment and an intelligent repair method. The method comprises the following steps: preprocessing a to-be-processed area of a to-be-detected product, performing excitation scanning, obtaining distribution data of an internal fluorescence signal, and generating a fluorescence signal distribution diagram; carrying out image analysis on the fluorescence signal distribution diagram, identifying and positioning an abnormal fluorescence signal region in the fluorescence signal distribution diagram, constructing a three-dimensional coordinate model according to the abnormal fluorescence signal region, and processing by adopting ultra-short pulse laser processing equipment to form a repair channel; providing a repair alloy, and filling the repair alloy into the repair channel through a directional infiltration technology to realize metallurgical bonding repair of the internal defect area; an optical traceable signal detection mechanism is introduced into a polycrystalline diamond material, and an ultrashort pulse laser micro-channel processing and directional infiltration repairing process is combined, so that positioning and in-situ repairing of internal defects are realized, and the overall mechanical property of the material is effectively recovered; therefore, the service life of the product is obviously prolonged, and the machining reliability is improved.

A system and method for generating ultra-short pulses intended to be inserted into a ring laser with a regulator of a pulsed signal of a certain intensity, the system includes an optical attenuator that allows the intensity of the pulsed signal to be adjusted at the input of an optical guide section, and a distributed amplification device inserted in the optical guide that make it possible to manage the power of the signal therein, so that it propagates as solitons or as self-similar pulses without suffering unwanted distortions despite the increase in the length of the laser cavity, increasing the power of the pulsed signal and making it possible to exceed the usual power limits of this type of laser.

The invention discloses a disc Mmyshev mode-locked laser, and belongs to the technical field of ultrafast laser. The disc Mmyshev mode-locked laser comprises a laser gain module, a first nonlinear medium, a second nonlinear medium, a first interference filter, a second interference filter, a dispersion compensation module, an output coupling mirror, a first concave reflecting mirror, a second concave reflecting mirror, a high reflecting mirror, a third concave reflecting mirror and a fourth concave reflecting mirror. According to the disc Mmyshev mode-locked laser, a Mmyshev filtering mechanism is introduced into the disc Mmyshev mode-locked laser, and mode-locked self-starting and ultra-short pulse output under the condition of high average power are achieved. The disc Mmyshev mode-locked laser does not need an SESAM or Kerr mode-locked medium, can obtain stable ultrashort pulses smaller than 100 femtoseconds, has high stability, self-starting, good beam quality and structural expandability, and is suitable for application fields such as precise micromachining and extreme ultraviolet lithography driving sources.

A kind of ultra-short pulse synchronization testing device and method based on optical Kerr effect. After the high-power density ultra-short pulse of multiple beams to be synchronized passes through optical Kerr medium, induced birefringence effect occurs, which instantaneously changes the polarization characteristics of the reference light beam, and the synchronization between multiple beams of ultra-short pulses is measured by the amplitude or phase change of the reference signal pulse. This method can realize the synchronization measurement of ultra-short pulses with large angle at the target point, and has the advantages of high measurement accuracy, good repeatability and high stability.

The application belongs to the technical field of ultra-short pulse laser, and particularly relates to a nonlinear fiber loop and full positive dispersion pump protection type 8-shaped cavity and a laser. The nonlinear fiber loop comprises a first circulator provided with three ports, a second circulator provided with three ports and a beam combiner. The first port of the first circulator is used to connect the third port of a coupler, the second port of the first circulator is connected with the third port of the second circulator, and the third port of the first circulator is connected with the output end of the beam combiner. The first port of the second circulator is used to connect the fourth port of the coupler through a first gain fiber, the second port of the second circulator is connected with the signal end of the beam combiner, and the first input end of the beam combiner is connected with a first pump light source.

The application provides a saturable absorption device, a preparation method and a low-threshold starting pulse mode-locked laser, and relates to the technical field of lasers. The application discloses a method for preparing a high-quality bismuth copper selenium oxide single crystal by a chemical vapor transport method, and a saturable absorption device prepared by simply using the high-quality bismuth copper selenium oxide single crystal can be applied to a pulse mode-locked laser, and can generate super-short pulse laser output, has high stability and a high signal-to-noise ratio, and has a low starting threshold.

The invention belongs to the technical field of bioelectricity medicine and cell therapy, and particularly relates to a system for carrying out intracellular electric treatment based on ultrahigh-frequency ultrashort pulses and application of the system. The system comprises a high-voltage ultrashort pulse generation module, a control module and an adherent cell processing module, wherein the high-voltage ultrashort pulse generation module is respectively connected with the control module and the adherent cell processing module; the control module presets a plurality of pulse parameter combinations, the high-voltage ultrashort pulse generation module outputs a pulse electric field with preset parameters according to an instruction sent by the control module, and the pulse electric field acts on an organelle through the adherent cell processing module. High-frequency ultrashort pulses are adopted, the unique electric field distribution characteristic of the high-frequency ultrashort pulses can penetrate through cell membranes without causing permanent damage, and the high-frequency ultrashort pulses directly act on specific organelles such as mitochondria, endoplasmic reticulum and lysosome. And the system can flexibly induce four main programmed cell death modes, is suitable for different treatment requirements, and is beneficial to precise medical treatment.

The invention provides a high-transparency Yb-doped yttrium gallium garnet laser ceramic and a preparation method thereof, the ceramic component is (YbxY1-x) 3Ga5O12 (0.001 < = x < = 0.2), raw material powder is prepared through coprecipitation and then formed, and oxygen presintering and hot isostatic pressing sintering are combined to prepare the high-transparency Yb-doped yttrium gallium garnet laser ceramic. The technical scheme provided by the invention has the advantages of simple preparation process and low cost, and can be applied to the fields of ultrashort pulse laser and broadband light sources.

The utility model discloses a multi-optical-path folding pool SRS (Sounding Reference Signal) ultrashort pulse laser. The device comprises a pump light source, an optical isolator, a beam splitter, an SRS unit, a spectroscope, a reflector, a dichroic mirror and an SRS amplification pool. Initial pump light is generated by the pump light source, one-way propagation is guaranteed through the optical isolator, the pump light is divided into two parts through the beam splitter, one part directly enters the SRS unit to generate Stokes light, the other part passes through the delay line and then is emitted to the dichroic mirror, the spectroscope separates the pump light and the Stokes light, the reflector reflects the Stokes light into the SRS amplification pool, the dichroic mirror reflects the pump light to enter the SRS amplification pool, and the SRS amplification pool emits the SRS light. The SRS amplification pool enables the pump light and the Stokes light to be reflected for multiple times in the pool and to be superposed in optical path, so that the high-power Stokes light is obtained. According to the utility model, through the design of the multi-optical-path folding pool, the energy and power of laser pulses are improved, stable output of high-energy and ultra-short pulses is realized, the energy conversion efficiency is optimized, and the energy utilization effect is improved.

The invention discloses an LPWG-based on-chip carrier envelope offset frequency detector and a self-beat frequency detection method. The detector comprises an ultra-short pulse port, a super-continuum spectrum SCG generation area, a long-period waveguide grating LPWG, a single-mode straight waveguide, an output straight waveguide, a coupling straight waveguide and a tuning electrode. The device is highly integrated, frequency beating can be completed only through one integrated waveguide chip, the problems that an existing detection method is high in cost, a system is complex, and a frequency beating system is difficult to operate are solved, a single chip is benefited to generate a cross-octave super-continuum spectrum and frequency doubling light at the same time, an extra frequency doubling crystal is not needed any more, and the device is simple in structure and convenient to operate. And due to the fact that the working bandwidth of the LPWG can limit the filtering effect, an external filtering element is not needed any more, and the successful research and development of the LPWG has wide application backgrounds in the aspects of high-precision frequency measurement, optical atomic clocks, stable and reliable on-chip optical frequency comb research and development and the like, and has important scientific significance and profound practical significance.

The present invention discloses an infrared photodetector with a secondary optoelectronic response, which includes an insulating substrate, a gold electrode, a silver electrode, an n-type InSe semiconductor, and a p-type GaSe semiconductor. The structure of the photodetector in this solution is as follows: the gold electrode is above the insulating substrate, the GaSe semiconductor is above the gold electrode, the InSe semiconductor is above the GaSe semiconductor and forms an InSe / GaSe heterojunction, the silver electrode is above the InSe. The InSe / GaSe heterojunction formed by the contact between the InSe semiconductor and the GaSe semiconductor has PN junction characteristics and can form a built-in electric field to effectively suppress the dark current of the detector. The optical second-order nonlinearity of the InSe semiconductor and the GaSe semiconductor converts infrared light that cannot be absorbed by the InSe semiconductor and the GaSe semiconductor into second harmonics that can be absorbed by the InSe semiconductor, thereby generating photo-generated carriers, and further generating photocurrent under the action of the built-in electric field of the PN junction. The detector in this solution has a second-order power coefficient and can be used for ultra-short pulse width measurement, super-resolution imaging, and ultrafast optoelectronic mixing signal processing.

The present invention discloses a dispersion measurement method for a high-power laser system, which relates to the fields of optical device measurement technology and laser technology. The method is based on the spectrum shaping of ultrashort pulse lasers, and obtains laser pulses with fingerprint spectrum structure and conversion limit pulse width by designing a special spectrum response curve. According to the frequency-time mapping principle, after the laser pulse with fingerprint spectrum structure is transmitted through a dispersive medium (object to be measured), the frequency domain distribution (i.e., spectrum) of the laser pulse will be mapped to the time domain, presenting a state in which the frequency domain distribution corresponds to the time domain waveform. By measuring the information such as the spectrum and time domain waveform of the laser pulse after the dispersion component is connected, and fitting and data analysis and processing with the dispersion model of Taylor expansion, the dispersion measurement of each component in the high-power laser system, such as a stretcher, a compressor, etc., is realized. The method constructs a fingerprint spectrum with a special structure for measurement, which can not only realize the rapid and precise diagnosis of the dispersion of the high-power laser system, obtain the deconstruction of high-order dispersion, but also reduce the statistical fluctuation of the data and the uncertainty of the measurement by increasing the sampling data points, and improve the accuracy of the dispersion measurement.

The invention discloses a neutron analysis physical testing system and method, and belongs to the technical field of nuclear physical testing. The system comprises a high-speed synchronous pulse generator used for generating pulse signals of various modulation sequences; the ultrashort pulse neutron generator is used for emitting short pulse neutron rays with specified parameters to the sample; the neutron detector is used for acquiring a secondary neutron signal; the gamma detector is used for acquiring a characteristic gamma signal generated by the neutron excitation detection sample; the safety control module is used for controlling the working state of the ultrashort pulse neutron generator; and the data processing device is used for collecting and gathering neutron signals and characteristic gamma signals in real time according to the time sequence of the pulse signals of the multiple modulation sequences. According to the system, time window drift and measurement errors are reduced, the ultra-short pulse neutron generator is started only under the condition that access control signals allow, and the accuracy, safety and stability of stratum physical parameter measurement are improved.

This application relates to the field of non-stick titanium cookware technology, and in particular to a surface treatment method for an uncoated non-stick titanium cookware based on a multi-level micro-nano composite structure. The method includes the following steps: Step 1: After heating the raw material of the cookware body sheet, it is placed on an embossing machine. The embossing machine embosses the raw material of the cookware body sheet, creating different patterns inside the cookware. The embossed raw material is then stretched through a mold to form a preliminary shape of the cookware body. Then, a stamping machine is used to close the edges of the raw material and perform multiple embossing processes to create a layered texture, forming the cookware body. In this application, titanium metal makes the entire non-stick cookware lighter and easier to use. The pure aluminum intermediate layer increases heat conduction efficiency, improving the non-stick effect. Multiple polishing processes make the surface of the non-stick cookware smoother, enhancing its non-stick performance and appearance. Micropores are etched on the surface of the cookware body using an ultra-short pulse laser device, achieving the non-stick effect.

The invention provides a high repetition frequency pulse train ultrashort pulse laser reduction direct writing method, which is applied to the technical field of laser processing and comprises the following steps: preparing precursor ink which comprises metal salt or metal oxide, polyhydric alcohol, deionized water and a dispersing agent; coating the precursor ink on the surface of a transparent substrate to form a liquid film; according to the target metal pattern, performing reduction direct writing on the surface of the transparent substrate by adopting ultra-short pulse laser of a high-repetition-frequency pulse string; and washing and blow-drying redundant precursor ink on the surface of the transparent substrate through deionized water and ethyl alcohol respectively, and obtaining a target metal pattern on the surface of the transparent substrate. According to the method, the heat influence of the substrate is effectively reduced, and the applicability of the laser direct writing technology based on the photothermal effect to different transparent substrate materials is expanded.

The invention belongs to the technical field of circuit board processing, and discloses a process method for laser precision processing of a circuit board, which comprises the following steps: S1, substrate pretreatment and mask preparation; s2, composite laser layered processing and dynamic parameter control; s3, auxiliary cooling and femtosecond laser fine trimming are carried out; s4, conducting layer preparation and stepped sintering; s5, synchronously windowing the solder mask and the solder paste mask; and S6, quality detection and repair. The carbonization and layering risks of the resin base material are inhibited, and the self-adaptive adjusting system dynamically balances energy input and the heat diffusion rate based on real-time monitoring data and an intelligent algorithm, so that the hidden danger of microcrack propagation of the high-frequency material is eliminated, selective removal of interfaces of different materials is realized, and the service life of the high-frequency material is prolonged. And according to the femtosecond laser fine trimming technology, a subsurface crystal structure is reconstructed through the cold machining characteristic of ultra-short pulses, and the problems of section carbonization residues and high-frequency signal transmission loss are synchronously solved.

The invention relates to a device for carrying out ultra-short pulse laser trimming on a chip resistor, and belongs to the technical field of laser trimming resistance, and the device comprises a laser device which is used for generating initial laser which is an ultra-short pulse Gaussian spot; the beam expander is used for adjusting the diameter of the passed initial laser to a preset required diameter; the half-wave plate is used for adjusting the polarization direction of the passing initial laser to be horizontal polarization; the spatial light modulator is used for loading a set hologram and modulating initial laser into flat-topped light, and the flat-topped light acts on a machining area of the chip resistor in the light path direction; the monitoring module is used for acquiring the real-time resistance value of the chip resistor and sending the real-time resistance value to the control module; and the control module is used for controlling the laser emission work of the laser according to the relationship between the real-time resistance and the resistance threshold. According to the invention, the technical problems of large heat affected zone, poor groove morphology, micro-cracks and the like existing in laser resistance trimming of the chip resistor by using Gaussian light spots in the prior art are solved.