The invention relates to the technical field of
semiconductor laser devices, in particular to a high-power-density distributed feedback type
laser chip and a preparation process thereof. According to the technical scheme, the
chip comprises a
chip body, the chip body comprises a back
electrode, a substrate, a lower
waveguide layer, a lower limiting layer, an
active layer, an upper limiting layer, an upper
waveguide layer, a highly-doped layer and a front
electrode which are sequentially stacked from bottom to top, and
graphene layers are arranged on the sides, close to the
active layer, of the lower limiting layer and the upper limiting layer. According to the invention, the
graphene heat conduction layer and the conical bulge and micropore array are introduced between the
active layer and the limiting layer, so that heat is directly and quickly dredged,
thermal resistance and interface strain are reduced, heat accumulation is relieved from the source, and the reliability of the chip is improved; the artificial micro-
nano grating formed by the conical structure and the DFB built-in
grating cooperatively enhance
longitudinal mode feedback, and improve the side mode rejection ratio and the
light field limiting factor. Meanwhile,
mode locking and 1
microsecond-level
wavelength tuning are achieved through array type current injection, and the
light spot and
coupling efficiency is improved in cooperation with a unit-level micro lens.