The invention discloses a 
visible light communication light source based on a nonpolar and semipolar surface and a corresponding patterned 
sapphire substrate. A 
sapphire substrate is selected to be processed into 
grating-shaped strip-shaped patterns; the angle of the side wall of a step is optimized in the 
etching process, and the angle of a growth surface of the next step is optimized; a barrierlayer is designed on the patterned 
sapphire substrate, and a 
silicon oxide film is adopted as an epitaxial 
barrier layer; a GaN layer, an N-type GaN layer, an InGaN / GaN multi-
quantum well layer, an electronic 
barrier layer and a p-type GaN layer are sequentially grown by adopting a chemical 
vapor phase epitaxy method, and the growth method of the GaN layer, the N-type GaN layer, the InGaN / GaN multi-
quantum well layer, the electronic 
barrier layer and the p-type GaN layer is disclosed. The influence of 
quantum-limited Stokes effect is weakened by utilizing the advantages of non-polar / semipolarsurface on III-group 
nitride polarization regulation, the overlapping of 
electron-hole wave functions on real space is increased, and the 
radiation recombination proportion and the rate of current carriers are improved, and therefore, the method provided by the invention is suitable for effectively improvement of the 
visible light communication performances by adopting the nonpolar and semipolar surface technologies.