The invention discloses a visible light communication light source based on a nonpolar and semipolar surface and a corresponding patterned sapphire substrate. A sapphire substrate is selected to be processed into grating-shaped strip-shaped patterns; the angle of the side wall of a step is optimized in the etching process, and the angle of a growth surface of the next step is optimized; a barrierlayer is designed on the patterned sapphire substrate, and a silicon oxide film is adopted as an epitaxial barrier layer; a GaN layer, an N-type GaN layer, an InGaN/GaN multi-quantum well layer, an electronic barrier layer and a p-type GaN layer are sequentially grown by adopting a chemical vapor phase epitaxy method, and the growth method of the GaN layer, the N-type GaN layer, the InGaN/GaN multi-quantum well layer, the electronic barrier layer and the p-type GaN layer is disclosed. The influence of quantum-limited Stokes effect is weakened by utilizing the advantages of non-polar/semipolarsurface on III-group nitride polarization regulation, the overlapping of electron-hole wave functions on real space is increased, and the radiation recombination proportion and the rate of current carriers are improved, and therefore, the method provided by the invention is suitable for effectively improvement of the visible light communication performances by adopting the nonpolar and semipolar surface technologies.