The invention relates to a nonpolar A side nitride film that comprises a silicon (102) underlay, metal layer which grows upon the silicon underlay sequentially, InGaAlN initial growth layer and the first InGaAlN buffer layer, it characterized in that: said silicon underlay is Si underlay which adopts the (102) side or offset angle. The nonpolar a side nitride film which grows on the silicon underlay can be used in LBD, laser, solar battery. The component extension configuration is adopted according to different component, for example the LBD and laser, and using the mature silicon craft further to produce relative diprosopia electrode component or peeling off component. The advantages of the invention are: the invention can increase the growth quality of nonpolar GaN base material, and decrease the cost; the craft of current component can be simplified greatly, the cost can be decreased, and increase the elimination efficiency and lightening efficiency greatly.