703results about How to "Improve growth quality" patented technology

The invention relates to a nonpolar A side nitride film that comprises a silicon (102) underlay, metal layer which grows upon the silicon underlay sequentially, InGaAlN initial growth layer and the first InGaAlN buffer layer, it characterized in that: said silicon underlay is Si underlay which adopts the (102) side or offset angle. The nonpolar a side nitride film which grows on the silicon underlay can be used in LBD, laser, solar battery. The component extension configuration is adopted according to different component, for example the LBD and laser, and using the mature silicon craft further to produce relative diprosopia electrode component or peeling off component. The advantages of the invention are: the invention can increase the growth quality of nonpolar GaN base material, and decrease the cost; the craft of current component can be simplified greatly, the cost can be decreased, and increase the elimination efficiency and lightening efficiency greatly.

The invention provides an InAs/GaSb superlattice infrared photoelectric detector and a manufacturing method thereof. The InAs/GaSb superlattice infrared photoelectric detector comprises a substrate, an epitaxy structure deposited on the substrate, an upper metal electrode formed above steps, a lower metal electrode formed under the steps and a passivation layer, wherein the epitaxy structure comprises an n-type doping buffer layer, an n-type electrode contact layer, a barrier layer, an intrinsic absorption layer, a p-type electrode contact layer and a cover layer, the steps are formed on two sides of the epitaxy structure through etching, the intrinsic absorption layer is composed of a plurality of periodical InAs/InSb/GaSb/ InSb superlattice structures. In the InAs/GaSb superlattice infrared photoelectric detector, InSb is respectively inserted into two interfaces of each superlattice period of the intrinsic absorption layer to form strained superlattices, the stress between the superlattices and the substrate is effectively balanced, the material growing quality is improved, and accordingly the photoelectric performance of the detector is improved.

The invention relates to a Chinese herbal medicine pesticide. The Chinese herbal medicine pesticide is prepared from the following raw materials in parts by weight: 1-10 parts of garlic, 4-10 parts of scrophularia ningpoensis, 1-9 parts of kusnezoff monkshood root, 5-9 parts of rhizoma arisaematis, 1-6 parts of sophora flavescens, 3-6 parts of agrimonia pilosa ledeb, 2-7 parts of sanguisorba officinalis, 1-5 parts of ferula, 1-9 parts of stemona, 1-10 parts of polygonum cuspidatum, 3-6 parts of szechwan chinaberry fruit, 2-5 parts of cyrtomium rhizome, 1-6 parts of pepper and 3-9 parts of herba houttuyniae. The pesticide has no residue on crops, and is efficient, low in toxicity and free from pollution on the environment; the pesticide has the effects of high efficiency, quick control on plant diseases and insect pests, disease prevention and disease treatment, and further is capable of promoting the growth of plants and improving the growth quality of crops.

The invention discloses a method for preparing earthworm cultivation substratum. By mixing livestock dung and edible fungus residue without foreign matters to carry out anaerobic fermentation, the method obtains the substratum for cultivating and reproducing earthworms, the livestock dung is pig dung or cow dung or the mixture of pig dung and cow dung, and the edible fungus residue is residue which is left over in the growth of cultured saprophytic lignicolous fungi or coprophilous fungi. Since the method utilizes the livestock dung and the edible fungus residue as the cultivation substratum to raise the earthworms, the method not only solves the problem of dung accumulation and waste and prevents environment pollution, but also increases the cultivation scale and growth quality of the earthworms by adding the edible fungus residue, thus effectively increasing the output of the earthworms.

The invention discloses a GaN-based light-emitting diode epitaxial wafer production method and a produced epitaxial wafer, and belongs to the field of semiconductor light-emitting diodes. The method includes growing a buffer layer, an n-type GaN layer, a stress regulation layer, a multiple quantum well layer, a p-type GaN layer and a p-type ohmic contact layer on a substrate sequentially. The stress regulation layer is of a multi-period structure. A growth method of each period of the multi-period structure includes growing a stress regulation InGaN sub layer at a first growth temperature, supplying hydrogen into a reaction chamber at a second growth temperature after the stress regulation InGaN sub layer finishes growing, and etching the surface of the stress regulation InGaN sub layer, wherein the second growth temperature is different from the first growth temperature. The GaN-based light-emitting diode epitaxial wafer production method and the produced epitaxial wafer have the advantages that through treatment of the stress regulation InGaN sub layer, a smooth contact surface is formed between the stress regulation InGaN sub layer and a stress regulation GaN sub layer, and accordingly, continuous extension of defects is prevented.

The invention discloses a vertical shower type metal organic chemical vapor deposition (MOCVD) reactor, which comprises a reaction chamber, a shower head on the top of the reaction chamber, cooling water inlet and outlet of the shower head, substrate holders at the bottom of the reaction chamber, a heater and a gas outlet, wherein a gas inlet for inputting the reaction gas is formed in the shower head; the vertical shower type MOCVD reactor is characterized in that more than three independent regions are formed in the cavity of the shower head at intervals; each independent region is provided with an independent gas inlet; a rotating shaft is penetrated through the axial centre of the shower head; the shower head is in linkage with the rotating shaft; and the plurality of substrate holders are relatively isolated and annularly arranged at the bottom of the reaction chamber. Due to the application of the technical scheme of the invention, the reaction gases are isolated and showered in sequence so as to effectively eliminate the gaseous-phase parasitic reaction; and meanwhile the tail gas after the reaction can quickly flow off through the gap of each substrate holder to be discharged from the reactor; therefore, the turbulence effect of the accumulated tail gas on the reaction gas is effectively eliminated to improve the growth quality of an epitaxial wafer and make the realization of infinitely increasing the wafer loading capacity possible.

The invention discloses a preparation method for an epitaxial wafer of a GaN-based light emitting diode, and belongs to the technical field of a semiconductor. The preparation method comprises the steps of laminating a buffer layer, a non-doped GaN layer, an N type layer, a stress release layer, a multi-quantum well layer and a P type layer on a sapphire substrate in sequence, wherein the stress release layer comprises multiple stress release sub-layers, the stress release sub-layers comprise a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are laminated in sequence, the first sub-layer is an AIGaN layer, the third sub-layer is an InGaN layer, the second and fourth sub-layers are GaN layers, and the growth temperature of the first sub-layer is higher than that of the third sub-layer. According to the method, a periodic structure is employed in the stress release layer, the relatively low growth temperature is employed in the InGaN layer, thereby facilitating good growth of lattices, the stress generated between the sapphire substrate and the GaN layers due to lattice mismatch can be released, the growth quality of the multi-quantum well layer is improved, and the photoelectric property of the LED is improved.

The invention discloses a pig feed additive which belongs to the field of feed and relates to a feed additive. The pig feed additive comprises the following components in parts by weight: 10-25 parts of yeast extract, 10-18 parts of high-temperature resistance lactic acid bacteria, 5-10 parts of soybean peptide, 8-18 parts of ganoderma fruiting body, 5-15 parts of bran, 10-22 parts of cordyceps mycelia, 1-3 parts of fructose-oligosaccharide, 1-4 parts of raffinose, 1-3 parts of cellulase, 1-2 parts of protease, 1-3 parts of mixed amino acids and 0.5-2 parts of amino acid chelated copper. After being compounded, the pig feed additive has the advantages of having very good anti-diarrhea effect, effectively enhancing the immunity of piglets, reducing the application amount of antibiotic products and improving the growth quality of the piglets; and through application of the pig feed additive, the phenomena that the piglets have long hair in a nursing stage, and the growth and development of the pigments are hindered after the nursing stage are avoided.

The invention provides a self-supporting gallium nitride layer, a preparation method therefor, and an annealing method. The preparation method at least comprises the following steps: providing a substrate; forming a first gallium nitride buffering layer on the substrate; forming a patterned mask layer on the first gallium nitride buffering layer, and carrying out the annealing under the atmosphere of ammonia gas, wherein the patterned mask layer is provided with a plurality of openings; forming second gallium nitride buffering layers on the patterned mask layer and in the openings; forming gallium nitride layers on the second gallium nitride buffering layers, and carrying out the high-temperature annealing; carrying out the cooling, enabling the gallium nitride layers to be automatically peeled off from the substrate, so as to obtain the self-supporting gallium nitride layer. According to the invention, the preparation method is lower in requirements for the preparation technology, and can achieve the quick automatic peeling of the gallium nitride layers. Moreover, the thermal stress generated in a peeling process cannot affect the gallium nitride layers, so the self-supporting gallium nitride layer with the high finished product rate can be obtained.

The invention discloses a slow-release device for growing silicon carbide single crystal by PVT method. The device comprises a crucible, a crucible cover is fastened on the crucible, a seed crystal is fixed on the inner side of the crucible cover, and silicon carbide powder is installed in the crucible The crucible is provided with a partition, which separates the silicon carbide powder source into upper and lower layers, and the partition is provided with several holes connecting the upper and lower layers of the silicon carbide powder source. The invention divides the straight-through crucible inner cavity into upper and lower layers, reduces the gas transmission rate from the wall to the seed crystal, effectively solves the problem of Si loss, and at the same time does not change the temperature field distribution in the crucible, and improves the crystal growth quality. Increase the utilization rate of raw materials, reduce the cost of raw materials, and bring benefits to the enterprise.

The invention relates to a nonpolar (1120)A side nitride film that comprises a silicon underlay, metal layer which grows upon the silicon underlay sequentially, InGaAlN initial growth layer and the first InGaAlN buffer layer, it characterized in that: said silicon underlay is Si underlay which adopts the (100) side, (110) side or offset angle. The nonpolar a side nitride film which grows on the silicon underlay can be used in LBD, laser, solar battery. The component extension configuration is adopted according to different component, for example the LBD and laser, and using the mature silicon craft further to produce relative diprosopia electrode component or peeling off component. Comparing with current technique, the advantages of the invention are: the invention can increase the growth quality of nonpolar GaN base material, and decrease the cost; the craft of current component can be simplified greatly, the cost can be decreased, and increase the elimination efficiency and lightening efficiency greatly.

The invention relates to the field of growth of monocrystalline diamonds through a microwave plasma chemical vapor deposition method and in particular relates to a gradient monocrystalline diamond anda preparation method thereof. Microwave plasma chemical vapor deposition equipment is adopted and high-purity air is introduced in a hydrogen and methane mixed gas source according to a continuous gradient concentration, so as to realize alternating deposition of a high-quality monocrystalline diamond layer without nitrogen and a nitrogen-containing diamond layer; then the gradient monocrystalline diamond with high quality, high strength and good toughness is prepared.

The invention discloses a method and device for growth of nitride materials at low temperature through laser assistance. The method comprises the steps that precursor steam of a non-nitrogen element and active nitrogen precursor gas are conveyed to a substrate material at the temperature ranging from 250 DEG C to 800 DEG C in a reaction chamber; a laser beam with the wavelength equal to the length of active nitrogen molecular bond resonance waves is utilized for acting on active nitrogen gas to enable laser energy to be directly coupled to active nitrogen gas molecules; and breakage of NH keys is accelerated, sufficient active nitrogen is provided, the non-nitrogen element chemically react with the active nitrogen, the III group of nitrogen film coating materials are deposited, and sustained action is carried out until a sediment covers a whole substrate and reaches the needed thickness. The device comprises a vacuum reaction cavity, a gas pre-mixing cavity, a wavelength tunable laser device and a moving mechanism. On the basis of improvement in the active nitrogen utilization rate and reduction of the environmental pollution, large-area, rapid and high-quality growth of the nitrogen film coating materials under the low-temperature environment can be achieved.

The invention discloses a large-scale production method for a chemical vapor deposition (CVD) graphene film. By the adoption of a CVD technology, first, heat treatment is performed on metal substrates under a vacuum state, inert gas and carbon source gas are injected, the carbon source gas is subjected to catalytic pyrolysis on the surfaces of the metal substrates at high temperature, then graphene grows, large-scale growth is achieved by the adoption of the mode that the multiple layers of metal substrates are overlaid, and every two adjacent layers of metal substrates are separated through a separation layer. Through arranging the separation layers, adhesion between the metal substrates is prevented, in addition, deposition of high-quality graphene on each layer of copper coil is not affected, the multiple layers of metal substrates used for graphene growth can be installed on one basal plate, in this way, the capacity which is a hundred times that of a traditional CVD method is achieved through the same reaction furnace, and large-scale production is achieved.

The invention belongs to the technical field of manufacturing semiconductor integrated circuits, and particularly relates to a capacitor of a nano-crystal memory and a preparation method thereof. The capacitor uses P-type monocrystalline silicon as a substrate, and an Al2O3 tunneling layer, a ruthenium and ruthenium oxide mixed nano-crystal, an Al2O3 blocking layer and a palladium electrode layer are arranged on the substrate in turn, wherein the Al2O3 layer is prepared by adopting an atomic layer deposition method; the mixed nano-crystal is formed by depositing a ruthenium layer through magnetron sputtering first and then performing rapid thermal annealing in a mixed gas atmosphere of nitrogen gas and a trace amount of oxygen gas; and the palladium electrode layer is formed by adopting a lift-off method. The capacitor structure of the memory has the excellent characteristics of good programming and erasing properties, long charge retention time and the like, and has a good application prospect on a flash memory.

The invention discloses a crystal pulling furnace with a replaceable furnace cavity. The crystal pulling furnace comprises the furnace cavity, a rotating pulling weighing unit, a heat-preservation heat field and a crucible. The heat-preservation heat field is arranged in the furnace cavity, the crucible is put into the heat-preservation heat field, the rotating pulling weighing unit is arranged on the furnace cavity, and a seed rod is arranged in the furnace cavity and connected with the a rotating pulling weighing unit; the furnace cavity comprises an upper flange disc, a lower flange disc and a cavity body, the cavity body is arranged between the upper flange disc and the lower flange disc, a heating device is arranged inside the cavity body or arranged on the periphery, and sealing devices are arranged between the cavity and the upper flange disc and the lower flange disc. A lifting device is arranged in the furnace cavity and fixed on the lower flange disc, and the heat-preservation heat field and the crucible are arranged on the lifting device. The crystal pulling furnace can be adjusted and replaced and can be suitable for growth of more size crystals, and is simple in structure, convenient to assemble and maintain and low in energy dissipation. In addition, the crucible can be located in the best temperature filed through lifting device, and the crystal growing efficiency and quality are improved.

The present invention provides a method of multi-walled carbon nantubes using polymer as raw material, belonging to inorganic function material synthesizing technology field, in particular: polyethylene or polypropylene, PEMA or polypropylene and catalyst are placed in the sealing container according to a certain proportion, calculated by weight percentage, polyethylene or polypropylene : PEMA or polypropylene : catalyst is 1:0.25-0.5:0.05-0.005; baking 10-25 hour under the temperature 600-850 Celsius, cooling to room temperature, removing reactant, acid washing to remove catalyst, the product is obtained by drying. The invention has a simple operation, high productive rate, lower cost, and is a green method for acquiring carbon nantubes, the multi-walled carbon nantubes have wide application, used as hydrogen storage material, high strength composite field, catalyst carrier etc.

The present invention relates to the field of crystal growth furnaces, wherein a purpose of the present invention is to provide a sapphire crystal growth furnace having three heaters. The sapphire crystal growth furnace comprises three mesh heaters woven by using tungsten wires, wherein the three mesh heaters respectively are the upper portion heater, the middle portion heater and the lower portion heater, the upper portion heater and the middle portion heaters are respectively arranged on electrodes on the upper portion and the middle portion of the furnace cylinder of the sapphire crystal growth furnace, and the lower portion heater is arranged on an electrode on the furnace bottom plate of the sapphire crystal growth furnace. According to the present invention, based on different requirements on the thermal field temperature gradient at different crystal growth stages, powers of the three heaters are matched, such that the seeding process and the crystal growth process achieve the optimized temperature environment; and significant effects are provided crystal growth quality increase, production cycle shortening, yield increase, and energy consumption reduction.

The present application discloses a manufacturing method of a memory cell including a resistor, comprising the following steps: a) forming a bottom electrode layer on an insulating substrate; b) forming a resistive material layer on the bottom electrode layer by MOCVD; c) forming a resistive material layer on the bottom electrode layer; forming a top electrode layer on the resistive material; and d) patterning the top electrode layer and the resistive material layer to form separated memory cells. The MOCVD method can be used to manufacture a resistive material layer with precise controllable thickness and composition and good uniformity, so that a memory cell of an RRAM with an MOM structure and excellent interface characteristics can be obtained.

A method for chemically and roughly treating a quartz surface overcomes the defects of the prior art in which the treatment to the quartz surface easily leads to damage and influences the size accuracy of the quartz product. The method is as below: at a normal temperature and a normal pressure, immersing a quartz product into a container filled with a treating fluid so as to undergo reaction after the surface of the quartz product is polished, taking out the quartz product after two-hour reaction, and immersing the quartz product into the treating fluid again so as to repeat the preceding reaction till the roughness Ra of the surface of the quartz product is equal to 1.5 micrometers to 4.5 micrometers after attachments on the surface of the quartz product is eliminated with deionized water. The treatment process has reasonable design, involves simple devices and is easy to be operated, and the obtained quartz product has uniform surface roughness which is free from the influence of the shape. During the participation in the CVD reaction, the crazing and the shedding of a deposited film on the quartz surface is effectively reduced so as to reduce the possibility of pollution to the reaction cavity, to remarkably improve the finished product rate and the production efficiency, and then further to prolong the service life of the quartz product, save time, reduce consumption and reduce production cost.

The invention discloses an atractylodes macrocephala cultivation technology. Through technical management of field choosing, field preparation, seedling cultivation, transplantation, field management, pest control, seed reservation and the like, pest control effect of atractylodes macrocephala is enhanced, the atractylodes macrocephala is good in grow quality and high in yield, and economical benefits are improved.

The invention belongs to the technical field of diamond preparation and discloses a method and a system for splicing and growing single-crystal diamonds. The method comprises the following steps: putting a seed crystal into a plasma CVD equipment cavity, sucking off ultimate pressure, introducing hydrogen, inputting energy, generating power discharge, and adjusting the temperature of the seed crystal; introducing a methane (or carbon-containing gases such as acetone and carbon dioxide) gas, growing the seed crystal for 1-100 hours at 800-1000 DEG C, and the like. According to the method, single-crystal diamonds are grown by using a CVD method through spicing growth, the purpose that the single-crystal diamonds is grown in a large scale is achieved, synthesis sizes directly depend on sizesof the seed crystals since conventional growth of single-crystal diamonds can be only longitudinally amplified on original seed crystals, two single-crystal diamond flakes of a same size and approximate thicknesses are fixed and spliced and grown simultaneously, then a large-size single-crystal diamond is grown, and bottle neck problems are solved.

The invention discloses an LED plant-growth lamp with a continuous spectrum. The LED plant-growth lamp comprises an LED light source lamp bead group (namely a light source), a light source base board, a radiator and a driving power source matched with the light source, wherein the LED light source lamp bead group consists of warm white light LEDs and red light LEDs. The correlated color temperature of the warm white light LEDs is below 4000K, and each warm white light LED is formed by applying fluorescent powder on a blue light chip of which the wave length of emitted light is 420-490nm; the fluorescent powder is a mixture of YAG fluorescent powder which emits yellow light at peak and fluorescent powder which emits green light at peak wavelength; the green-light fluorescent powder accounts for 5%-30% of the total weight of the fluorescent powder; the wave length of the red light LEDs is within the range of 620-680nm. The LED plant-growth lamp disclosed by the invention has the technical effects that the wave length of light is within the range of 430-680nm, and the lamp has the continuous spectrum so that the requirements of plants for light with other wave lengths can be met; the light supplementing effect is good; the growth quality of plants is high. The LED plant-growth lamp saves energy and is low in production cost.

The invention discloses special biological organic fertilizer for cucumbers and a preparation method of the special biological organic fertilizer, which belong to the technical field of organic fertilizers. The fertilizer is prepared from cattle and sheep excrement, corn straws, peanut seedlings, hazelnut meal, humic acid, brown sugar, EM fungicide, rhizoma coptidis, honeysuckle flower, Houttuynia cordata, radix isatidis, urea, trace elements, attapulgite, sepiolite powder, soil conditioner and a composite microorganism agent according to a given weight proportion. The fertilizer has rich nutrients, satisfies the nutrient demand for the growth of the cucumbers at different periods, can effectively improve the physical and chemical properties of the soil, can improve the water and fertility retention capacity of the soil, can prevent various physical and chemical diseases of plants, and can effectively improve and the yield and quality of the cucumbers.