Preparation method for epitaxial wafer of GaN-based light emitting diode
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as lattice mismatch, lattice defects, and affecting LED photoelectric performance, and achieve the effect of improving photoelectric performance and growth quality
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[0026] The embodiment of the present invention provides a method for preparing an epitaxial wafer of a GaN-based light-emitting diode, see figure 1 , The preparation method includes:
[0027] Step 100: Clean the surface of the sapphire substrate.
[0028] Specifically, this step 100 may include:
[0029] The sapphire substrate is heated to 1110°C in a Metal-organic Chemical VaporDeposition (MOCVD) reaction chamber. 2 ) Annealing the sapphire substrate in an atmosphere for 8-10 minutes.
[0030] In practical applications, a Si substrate or a SiC substrate can also be used to replace the sapphire substrate.
[0031] Step 101: Growing a buffer layer on a sapphire substrate.
[0032] Specifically, this step 101 may include:
[0033] The growth temperature was controlled to 540°C, and a GaN buffer layer with a thickness of 30 nm was grown on the sapphire substrate.
[0034] Step 102: Growing an undoped GaN layer on the buffer layer.
[0035] Specifically, this step 102 may includ...
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