Preparation method for epitaxial wafer of GaN-based light emitting diode
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as lattice mismatch, lattice defects, and affecting LED photoelectric performance, and achieve the effect of improving photoelectric performance and growth quality
Active Publication Date: 2016-10-26
HC SEMITEK SUZHOU
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The invention discloses a preparation method for an epitaxial wafer of a GaN-based light emitting diode, and belongs to the technical field of a semiconductor. The preparation method comprises the steps of laminating a buffer layer, a non-doped GaN layer, an N type layer, a stress release layer, a multi-quantum well layer and a P type layer on a sapphire substrate in sequence, wherein the stress release layer comprises multiple stress release sub-layers, the stress release sub-layers comprise a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are laminated in sequence, the first sub-layer is an AIGaN layer, the third sub-layer is an InGaN layer, the second and fourth sub-layers are GaN layers, and the growth temperature of the first sub-layer is higher than that of the third sub-layer. According to the method, a periodic structure is employed in the stress release layer, the relatively low growth temperature is employed in the InGaN layer, thereby facilitating good growth of lattices, the stress generated between the sapphire substrate and the GaN layers due to lattice mismatch can be released, the growth quality of the multi-quantum well layer is improved, and the photoelectric property of the LED is improved.
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Technology Topic
Lattice mismatchMultiple stress +8
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Property | Measurement | Unit |
Doping concentration | 3.0 ~ 1019.0 | cm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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