Method and system for splicing and growing single-crystal diamond
A technology for single crystal diamond and single crystal growth, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc. It can solve the problems of difficulty, the four corners of the seed crystal cannot be grown, and the actual effect is not obvious, and achieve the effect of solving the bottleneck
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[0023] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.
[0024] The existing process is only a single seed crystal surface lateral growth, but this method is difficult (requires precise control of growth parameters, the fluctuation area is small), high cost (requires high-configuration deposition equipment to achieve), and the effect is not obvious (expanded The size does not exceed 1mm, and the four corners of the seed crystal cannot grow due to orientation restrictions), which cannot solve the fundamental problem of growing large-size single crystal diamond.
[0025] The application principle of the present invention will be further described below with reference to the drawing...
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