1813results about How to "Improve photoelectric performance" patented technology

The invention provides a method for extracting carbon quantum dots from activated carbon, which comprises the following steps of: adding dry activated carbon powder to salpeter solution and stirring for backflow; performing reduced pressure distillation for evaporating suspension obtained by backflow to dryness; dispersing obtained black solids in water, and neutralizing obtained solution with sodium hydroxide; and finally, centrifugating neutralized black suspension for removing precipitation, separating supernatant fluid by using an ultrafiltration centrifugal tube or an ultrafiltration membrane, collecting filtrate, and drying the filtrate to obtain carbon quantum dots. The method uses cheap and available activated carbon as carbon sources, and can obtain a large number of carbon quantum dots by simple chemical oxidation process and simple subsequent processes of evaporation, saturation, centrifugation and ultrafiltration. The carbon quantum dots are graphite structure nanocrystals with the grain diameter of 3 to 5 nm, the surfaces of which have a large amount of hydroxide radicals. The carbon quantum dots have good fluorescence and electrochemiluminescence.

The invention belongs to the technical field of photo-electronics, and more specifically relates to a low-roughness and low-square-resistance flexible transparent conductive composite thin film, wherein the thin film adopts a three-layer composite structure; the lowest bottom layer is provided with a transparent polymer thin film; the middle layer is provided with a conductive network formed by metal nanowires; the topmost layer is a provided with a transparent conductive layer which uniformly covers the transparent polymer thin film and the conductive network; the flexible transparent conductive composite thin film is less than 20-nanometer in average roughness, less than 30-ohm/square meter in square resistance, and greater than 80% of light transmittance within a visible light range; and the transparent conductive thin film can bear bending with radius of curvature of 2mm. The invention also discloses a preparation method for the flexible transparent conductive composite thin film. The flexible transparent conductive composite thin film provided by the invention has low roughness, high conductivity, high light transmittance, simple preparation method and low cost, and is particularly suitable for flexible display and illumination, a flexible solar battery and flexible touch equipment.

The invention relates to an organic semiconductor material containing naphthalene [1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole and application thereof, wherein the organic semiconductor material is prepared by reacting the halogenated derivatives with the monomer containing an aromatic group structure under the metal catalyst, wherein the halogenated derivatives are obtained by halogenating the naphthalene [1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole; the aromatic group is connected with a naphthalene [1, 2-c:5, 6-c] di [1, 2, 5] thiadiazole unit in a conjugate manner. The organic semiconductor material is characterized by containing 3, 7 substituted decorative[1, 2-c: 5, 6-c] di [1, 2, 5] thiadiazole chemical groups; as the naphthalene [1, 2-c:5, 6-c] di [1, 2, 5] thiadiazole has excellent electron-withdrawing ability and planarity, the organic semiconductor material can excellently adjust the photoelectric property, has excellent photoelectric performance, and is applied to the field of organic photoelectric components.

The invention provides an InAs/GaSb superlattice infrared photoelectric detector and a manufacturing method thereof. The InAs/GaSb superlattice infrared photoelectric detector comprises a substrate, an epitaxy structure deposited on the substrate, an upper metal electrode formed above steps, a lower metal electrode formed under the steps and a passivation layer, wherein the epitaxy structure comprises an n-type doping buffer layer, an n-type electrode contact layer, a barrier layer, an intrinsic absorption layer, a p-type electrode contact layer and a cover layer, the steps are formed on two sides of the epitaxy structure through etching, the intrinsic absorption layer is composed of a plurality of periodical InAs/InSb/GaSb/ InSb superlattice structures. In the InAs/GaSb superlattice infrared photoelectric detector, InSb is respectively inserted into two interfaces of each superlattice period of the intrinsic absorption layer to form strained superlattices, the stress between the superlattices and the substrate is effectively balanced, the material growing quality is improved, and accordingly the photoelectric performance of the detector is improved.

The invention relates a method for manufacturing a high-quality perovskite thin film. The main steps are that organic amine treatment is carried out on powder or crystals of a precursor of perovskite, and then the powder or the crystals of the precursor of the perovskite are converted into liquids. The liquids are subjected to film forming technology to manufacture the high-quality perovskite thin film. The perovskite thin film manufactured through utilization of the technical process is controllable and uniform in thickness and good in crystallinity. The technical process is simple in operation and lower in cost, and is applicable to manufacturing highly efficient perovskite solar cells, light emitting diodes, photosensitive elements and laser devices in a large-sized mode.

Disclosed are a method for manufacturing a metal grid-graphene transparent electrode and a method for manufacturing a touch screen from the metal grid-graphene transparent electrode. The method for manufacturing the metal grid-graphene transparent electrode and the method for manufacturing the touch screen have the advantages that merits of graphene and merits of a metal grid structural material are combined with one another, defects of the graphene can be effectively overcome by means of adjusting sizes of metal grids, accordingly, the photoelectric property of the metal grid-graphene transparent electrode is effectively improved, a flexible continuous transparent conductive film can be formed by means of shifting a graphene film on the metal grids, and the manufactured metal grid-graphene transparent electrode and the manufactured touch screen are non-toxic and environment-friendly and are excellent in photoelectric property and flexibility.

The invention belongs to the technical field of liquid crystal display and particularly relates to a flexible display device of a cholesteric liquid crystal capsule and a preparation method thereof. The flexible display device comprises a light absorption layer, a first flexible substrate, a second flexible substrate, a first electrode, a second electrode, a first orientation layer, a second orientation layer and a liquid crystal mixture layer with a special structure polymer wall. The invention further provides the preparation method of the flexible display device of the cholesteric liquid crystal capsule with the special regular structure. According to the method, a light mask plate with a special shape is utilized to induce a polymer monomer to undergo a polymerization reaction through light so that the polymer wall is formed, liquid crystal molecules are subjected to capsulation wrapping, the polymer wall is formed by a plurality of regular triangular truss structures and is stressed evenly and stable in structure due to the shape, mechanical performance of the flexible display device is remarkably improved, display performance is also improved, and accordingly comprehensive performance of the flexible display device is improved.

The invention belongs to the technical field of organic photoelectric materials, and discloses a tetraphenylethylene-containing organic semiconductor material and a preparation method thereof, and application of the material in organic photoelectric devices. The tetraphenylethylene-containing organic semiconductor material is disclosed as Formula I or II, wherein R1, R2, R3, R4 and R5 can be identical or different aromatic ring derivative groups. Different modification groups can be connected to the tetraphenylethylene to regulate the electronic or hole transmission performance of the tetraphenylethylene derivatives, so that the organic semiconductor material not only can be used as a luminescent layer, but also can be used as a luminescent layer and current carrier transmission layer, thereby obtaining the electroluminescent devices with favorable photoelectric properties, simple structure and low cost; and the organic semiconductor material has wide application prospects in the fields of organic electroluminescence, organic field-effect transistors, organic solar cells and other organic electronics.

The invention discloses an organic luminescence display device. The organic luminescence display device comprises a substrate, a first electrode, a second electrode, an optical reinforcing layer and an organic layer, wherein the first electrode has reflection characteristics; the second electrode has semi-transmittance semi-reflection characteristics; the optical reinforcing layer is arranged on the second electrode; the organic layer is arranged between the first electrode and the second electrode, the organic layer comprises a hole-injection layer, a hole-transport layer, a luminescence layer and an electron transfer layer, the hole-injection layer is adjacent to the first electrode and arranged above the first electrode, the luminescence layer comprises a red light luminescence layer, a green light luminescence layer and a blue light luminescence layer, which are respectively arranged in a red pixel area, a green pixel area and a blue pixel area; and the organic luminescence display device also comprises an optical compensation layer which is arranged in a green light pixel area and a red light pixel area and between the hole-injection layer and the hole-transport layer, and the optical compensation layer is a structure with at least two layers.

The invention discloses a dye-sensitized solar cell photo-anode and a preparing method and application of the dye-sensitized solar cell photo-anode. The preparing method of the dye-sensitized solar cell photo-anode includes the following steps that heat treatment is carried out on a dopant and tungsten trioxide in acid to prepare powder, wherein the dopant is oxide or salt of metal M, the metal M can enter lattices of the tungsten trioxide after being dissolved in the acid, and the atomic orbital and the W5d orbital of the metal M can be hybridized; slurry is prepared from the powder; the surface of a conducting substrate is coated with the slurry to prepare the dye-sensitized solar cell photo-anode. The preparing method is simple in technology, and the prepared dye-sensitized solar cell photo-anode is applied to a dye-sensitized solar cell and has good photoelectric performance and good industrialization application prospects.

The invention belongs to the technical field of organic photoelectric materials, in particular to pyrazine-ring-containing organic dyes and a synthesis method and use thereof. The pyrazine-ring-containing organic dyes disclosed by the invention have high light trapping capacity; and as the dye molecules take the pyrazine rings as electron-withdrawing groups, the absorption spectrum and fluorescence spectrum of the dyes can be regulated by using different numbers of different aromatic nucleus. Compared with ruthenium dyes, the dyes disclosed by the invention are made of simple, cheap and readily available raw materials and easy to be purified and have the advantages of low cost and easy preparation and the like. In addition, pyrazine and derivatives thereof have high photoelectric properties, such as electronic transmission capacity and strong electron withdrawing capacity, and therefore are high-quality photovoltaic materials; and when applied to dye sensitized solar cells, the dyes can achieve energy conversion efficiency of 8 percent.

The invention relates to a low driving voltage dimming film and a preparation method thereof. The preparation method comprises the steps of mixing acrylate, an acrylic monomer, a surfactant and a photoinitiator in a ratio to prepare UV (Ultraviolet) optical cement, mixing the UV optical cement with liquid crystal uniformly, adding 0.1-0.8% of spacer and mixing to prepare PDLC (Polymer Dispersed Liquid Crystal); and sandwiching the PDLC between two transparent conductive films, rolling to form a liquid crystal film, and curing the liquid crystal film by heating or with ultraviolet light, thus forming the dimming film. The obtained low voltage dimming film has the working voltage of 24/36 V and the lower power consumption of 0.5-1.5 W/m<2>, simultaneously has excellent photoelectric performance, and is suitable for metro shielding doors, bathroom partitions, bank partitions and the like.

A dye-sensitized solar cell comprising a semiconductor electrode prepared by spraying a metal oxide nanoparticle dispersion on a conductive substrate using an electric field to form a metal oxide nanoball layer which is composed of agglomerated metal oxide nanoparticles and has a high porosity and specific surface area, exhibits improved photoelectric properties even when a gel or solid electrolyte is used.

The invention provides a graphical substrate and a light-emitting diode (LED) chip. The graphical substrate comprises a basic substrate, graphical bumps and a graphical bump mask, wherein the graphical bumps are arranged in an array form and formed on the basic substrate; and the graphical bump mask at least covers the tops of the graphical bumps. The LED chip comprises an epitaxial layer, a transparent conductive layer, a connection electrode and the graphical substrate which is provided by the invention, wherein the epitaxial layer and the transparent conductive layer are grown on the graphical substrate sequentially. The graphical substrate and the LED chip which are provided by the invention have the advantages that: a lateral epitaxial region is increased by arrangement of the graphical bump mask, and the light emitting efficiency of the LED chip is improved, so the photoelectric performance of the LED chip is improved.

The invention discloses a method for preparing gold nanoparticles by annealing of a gold film. The method comprises the following steps: depositing a gold nano film (2) on a base material (1) by a magnetron sputtering method or vacuum evaporation method, wherein the vacuum degree of a magnetron sputtering chamber or a vacuum evaporation chamber is 10<-3>-10<-4>Pa, and the thickness of the deposited gold nano film (2) is 5-20nano; integrally arranging the deposited gold nano film (2) and the base material (1) in an annealing furnace to be heated for 30-120min, wherein the heating temperature is 350-600 DEG C; and cooling to the room temperature, and forming gold nanoparticles (3) on the base material (1). According to the invention, through controlling the thickness of the gold film, the annealing temperature, the annealing time and other parameters, the gold nanoparticles in different sizes and shapes can be obtained. The method disclosed by the invention has the advantages that the preparation is simple, the sizes and the shapes of the nanoparticles can be controlled, the preparation efficiency is high, and the like.

The invention provides an epitaxial growth method for preventing electronic leakage and defect extension. An electronic barrier layer with a thickness of 8-25nm is grown between a grown multiple quantum well InxGa[1-x]N layer and a grown P type GaN layer through NH3, TMGa and TMA1. The electronic barrier layer comprises 2-6 groups of double-layer structures, and the content of Al of a UAlGaN layer of each double-layer structure is 15%-50% less than that of a UAlGaN layer of the previous double-layer structure. According to the epitaxial growth method and structure for preventing electronic leakage and defect extension, the UAlGaN/UGaN structure with Al content reduced layer by layer is adopted to serve as the electronic barrier layer, single energy level height distribution of a traditional P-spacer energy band is changed, the resisting effect on hole injection is weakened, and light emitting efficiency of an MQW is improved.

The invention discloses a ZnO/g-C3N4 nanocomposite and its preparation method, and belongs to the field of solar energy utilization technology. The ZnO/g-C3N4 nanocomposite is a composite material of zinc oxide nanorod and g-C3N4, namely ZnO/g-C3N4. The nanocomposite is obtained by a two-step method, which specifically includes: Step One, an electrochemical deposition method is implemented to grow the zinc oxide nanorod; and Step Two, a direct heat treatment method is implemented to coat the zinc oxide nanorod with a layer of g-C3N4. According to the prepared ZnO/g-C3N4 nanocomposite, separation efficiency of photogenerated electron-holes is raised and photoresponse current density is enhanced by means of high specific surface area, large energy gap and good photoconduction performance of the zinc oxide one-dimensional nanorod as well as visible-light response characteristics and high chemical stability of g-C3N4. Thus, solar energy utilization rate is raised effectively, and a good method is provided for the current problem of solar energy utilization. The preparation method of the ZnO/g-C3N4 nanocomposite has advantages of low energy consumption, simple condition, easy operation and the like.

The invention discloses a solar battery with a graphite interface layer and a manufacturing method thereof. The solar battery comprises conducting glass, a thin oxide film, an electrolyte and a pair of electrodes, wherein the graphite interface layer is arranged between the conducting glass and the thin oxide film. A graphite oxide suspension is sprayed to the conducting glass, and the graphite oxide sprayed to the conducting glass is reduced to graphite at high temperature in a reducing or inert atmosphere. By using high conductivity and an appropriate energy band structure of graphite, the graphite interface layer is introduced between the conducting glass and the thin oxide film, so that the electrolyte can be effectively prevented from touching the conducting glass, the compounding possibility between photogenerated electrons and the electrolyte is reduced, the back reaction process is inhibited, and the photoelectric properties of the battery are improved.

The invention discloses a quantum dot light emitting layer and a preparation method and an application thereof. The quantum dot light emitting layer includes quantum dots, and the quantum dots are combined with organic ligands. The organic ligands include at least one of X1-R1-C-triple-bond-C-C-triple-bond-C-R2, X2-M-R3 and X3-R4-CH2-CH2-R5, the X1, X2 and X3 are bound to the surface of the quantum dots, and at least the organic ligands on the surface of the quantum dot light emitting layer are cross-linked by at least one of the groups - C-triple-bond-C-C-triple-bond-C-,-M- and -CH2-CH2- contained in the organic ligands, wherein the X1, X2 and X3 are groups bound to the surface of the quantum dots, the R1, R2, R3, R4 and R5 are independently selected from alkyl or alkyl derivative with conjugated or non-conjugated groups, and M is aryl. The quantum dot light emitting layer of the invention has stable structure quality and stable light emitting performance.

The invention relates to a novel method for improving quality of perovskite. The invention belongs to a preparation method of film material and is characterized in that a perovskite film is treated with organic amine gas or organic amine solution for a certain period of time, so that the quality of the perovskite film is improved. Defects of the perovskite film can be made up effectively through treatment; surface roughness can be reduced and film forming performance is improved. The perovskite film prepared by adopting the technique provided by the invention is uniform in thickness, low in roughness and good in crystallinity. Besides, the technique is simple in operation and low in cost, and is suitable for being used for preparing efficient perovskite solar cells, LEDs, photosensitive elemtns and laser devices in a large scale.

The invention belongs to the technical field of solar batteries, which more particularly relates to a preparation of a novel triphenylamine group organic dye and the application thereof as a photosensitizer in a dye-sensitized solar cell. The triphenylamine group organic dye provided by the invention has excellent light-capturing capacity; the D-Pi-A molecular structure thereof causes the effective transferring of the electrons in the molecule. The titanium dioxide electrode sensitized by the dye is applied to the dye-sensitized solar cell and obtains a higher photoelectric conversion property. The novel triphenylamine group organic dye provided by the invention is novel in structure, is easy to be composed, is low in cost, and has excellent photoelectric properties, can be modified by molecule designing and shows a potential application prospect to replace a heavy metal organic photosensitizer.

The invention belongs to the technical field of photoelectric detection, and particularly discloses an ultraviolet detector manufacturing method which is achieved by gradient assembly of multi-size zinc oxide quantum dots in multiple layers of graphene. According to the ultraviolet detector manufacturing method, structure and performance advantages of the ZnO quantum dots and the graphene are combined, and collochemistry is adopted as the basic method to obtain the ZnO quantum dots with different sizes, and the band gaps of the ZnO quantum dots vary from the near ultraviolet area to the deep ultraviolet area; wet chemistry is adopted to prepare single-layer oxidized graphene, carboxyl functional group modification is then carried out on the surface of the single-layer oxidized graphene so that ZnO quantum dots with a single size can be suitable for being assembled on the surface of the single-layer oxidized graphene, and then the ZnO quantum dots (QD) with different sizes are used as active materials of ultraviolet response to construct a multi-layer sandwich type structure. According to the ultraviolet detector manufacturing method, gold, or platinum or ITO is used as electrode materials, a horizontal distribution type strip-shaped or itnerdigital electrode structure is designed, and then an ultraviolet detector is obtained and inter-band absorption response from near ultraviolet to deep ultraviolet is achieved.

The invention provides an LED epitaxial layer growing method and an LED epitaxial layer. The method for growing a P-type GaN layer comprises the steps that A, NH3 and Cp2Mg are introduced in a reaction chamber at the temperature of 900 DEG C to 950 DEG C, wherein pressure of a reaction cavity ranges from 200 mbar to 600 mbar, TMGa is closed, and pretreatment of doping Mg is carried out for 10 minutes-20 minutes; B, TMGa is introduced, Cp2Mg is closed, a GaN layer grows for 20 minutes-40 minutes, and the thickness of GaN is 5 nm-10 nm; the step A and the step B are repeated ten to twenty times until the total thickness of the P-type GaN layer is 80 nm-200 nm. According to the method, delta doping is used for growing the P-type GaN layer, the crystal quality of the P-type GaN layer is improved, the dislocation density is reduced, and hole concentration and the migration rate of P-type GaN are improved; more hole-electron pairs can be provided for light-emitting active areas of an LED device, the composite probability is improved, the brightness is promoted, and therefore photoelectric property of the LED device is improved.