LED epitaxial layer growing method and LED epitaxial layer

A growth method and epitaxial layer technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of LED device voltage rise, poor anti-static ability, aggravated compensation effect, etc., to reduce the working voltage, good contact, defects low density effect

Inactive Publication Date: 2014-08-20
XIANGNENG HUALEI OPTOELECTRONICS
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Problems solved by technology

[0003] Mg-doped: GaN material (P-GaN) has been widely used in GaN-based light-emitting diode (LED) products. In order not to damage the InGaN material of the active layer, the p-type GaN layer is generally grown at a lower temper

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  • LED epitaxial layer growing method and LED epitaxial layer
  • LED epitaxial layer growing method and LED epitaxial layer
  • LED epitaxial layer growing method and LED epitaxial layer

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Embodiment 1

[0046] see figure 2 , the present invention uses AixtronMOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa), triethylgallium (TEGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100mbar and 800mbar.

[0047] A method for growing an LED epitaxial layer, which sequentially includes processing a substrate, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing a Si-doped GaN layer, growing an active layer MQW, growing a P-type AlInGaN layer, and growing a P-type GaN layer layer step, its opera...

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Abstract

The invention provides an LED epitaxial layer growing method and an LED epitaxial layer. The method for growing a P-type GaN layer comprises the steps that A, NH3 and Cp2Mg are introduced in a reaction chamber at the temperature of 900 DEG C to 950 DEG C, wherein pressure of a reaction cavity ranges from 200 mbar to 600 mbar, TMGa is closed, and pretreatment of doping Mg is carried out for 10 minutes-20 minutes; B, TMGa is introduced, Cp2Mg is closed, a GaN layer grows for 20 minutes-40 minutes, and the thickness of GaN is 5 nm-10 nm; the step A and the step B are repeated ten to twenty times until the total thickness of the P-type GaN layer is 80 nm-200 nm. According to the method, delta doping is used for growing the P-type GaN layer, the crystal quality of the P-type GaN layer is improved, the dislocation density is reduced, and hole concentration and the migration rate of P-type GaN are improved; more hole-electron pairs can be provided for light-emitting active areas of an LED device, the composite probability is improved, the brightness is promoted, and therefore photoelectric property of the LED device is improved.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial design, in particular to a method for growing a p-type GaN layer by using a delta doping method and an LED epitaxial layer. Background technique [0002] LEDs are widely used in a wide range of fields such as display screens, sensors, communications, and lighting. As the core semiconductor device, GaN-based blue LEDs can be combined with phosphors to produce white light, which is very attractive in terms of lighting. [0003] Mg-doped: GaN material (P-GaN) has been widely used in GaN-based light-emitting diode (LED) products. In order not to damage the InGaN material of the active layer, the p-type GaN layer is generally grown at a lower temperature, resulting in its crystal The quality declines and the compensation effect increases, resulting in an increase in the voltage of the LED device, a decrease in brightness, and a deterioration in the antistatic ability (ESD). Contents of the inv...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02H01L33/14
CPCH01L33/0066H01L33/0075H01L33/025H01L33/14
Inventor 农明涛
Owner XIANGNENG HUALEI OPTOELECTRONICS
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