Epitaxial structure and growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency

Abstract

The invention discloses an epitaxial structure and a growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency. The order of the epitaxial structure from bottom to up is that a substrate, a low-temperature GaN buffer layer, a GaN non-doping layer, a N-shaped GaN layer, a multiple quantum well (MQW) structure, a multiple quantum well active layer, a low-temperature P-shaped GaN layer, a P-shaped aluminum (AL) GaN layer, a high-temperature P-shaped GaN layer and a P-shaped contact layer, wherein the order of the multiple quantum well active layer from bottom to up comprises a InyGa1-yN potential well layer, a InN layer and a barrier layer in sequence. The growing method of the multiple quantum well active layer structure is that by inserting the InN layer and a low-temperature annealing step in the growing process of a InyGa1 potential well layer and a GaN barrier layer, so that the composition of In quantum dot in the barrier layer is advanced and crystalline quality of the quantum well is improved, therefore, gallium nitride based LED lighting efficiency is improved.

Description

[0001] technical field [0002] The invention relates to the technical field of preparation of group III nitride materials, in particular to a novel multi-quantum well active layer structure and an epitaxial growth method capable of effectively improving the luminous efficiency of gallium nitride-based light-emitting diodes. Background technique [0003] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When the forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and directly emit light of various colors. [0004] Group III nitrides represented by gallium nitride are wide-bandgap semiconductor materials with direct bandgap, which have excellent p...

AI Technical Summary

Problems solved by technology

However, after the growth of the InGaN potential well layer is completed, the GaN barrier layer is often grown at high temperature, which will lead to the volatilization of In and the change in the thickness direction of the potential well layer, thereby causing the reduction of the composition of In quantum dots and the expansion of the luminous wavelength.

In addition, the diffusion of Si atoms into the InGaN potential well layer will also cause the deterioration of the quantum well crystal quality and reduce the luminous efficiency of the device.

Images