4252results about How to "Stable production" patented technology

A semiconductor device 100 is provided with a multiplex through plug 111 that fills an opening extending through the silicon substrate 101. The multiplex through plugs 111 comprises a column-shaped and solid first through electrode 103, a first insulating film 105 that covers the cylindrical face of the first through electrode 103, a second through electrode 107 that covers the cylindrical face of the first insulating film 105 and a second insulating film 109 that covers the cylindrical face of the second through electrode 107, and these have a common central axis. The upper cross sections of the first insulating film 105, the second through electrode 107 and the second insulating film 109 are annular-shaped.

An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

Apparatus and method for generating and controlling flows of positive and negative air ions includes interposing isolated sets of electrodes in a flowing air stream to separately produce positive and negative ions. The rates of separated production of positive and negative ions are sensed to control ionizing voltages applied to electrodes that produce the ions. Variations from a balance condition of substantially equal amounts of positive and negative ions flowing in the air stream are also sensed to alter bias voltage applied to a grid electrode through which the air stream and ions flow.

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.

A toner including a binder resin including a polyester resin in an amount of from 50 to 100% by weight based on total weight of the binder resin; a colorant; and a resin dispersant selected from the group consisting of modified polyurethane dispersants and combinations of a basic copolymer dispersant with a pigment derivative. A developer including the toner and a carrier. A method for preparing the toner including dissolving or dispersing a toner composition including a modified polyester resin, a colorant, and a resin dispersant in an organic solvent; dispersing the toner composition liquid in an aqueous medium to prepare an emulsion while reacting the modified polyester resin with a compound having an active hydrogen atom; removing the solvent from the emulsion to prepare a toner particle dispersion; and washing and drying the toner particles. An image forming method and apparatus using the toner are also provided.

Electrophotographic photoreceptor having a photosensitive layer containing an amino compound selected from formulae 1 to 22 in the specification.

Disclosed is a laminated inductor that has good direct current superimposition characteristics, does not cause a variation in temperature characteristics, suppresses the occurrence of delamination, and can be stably manufactured. Also disclosed are a method for manufacturing the laminated inductor and a laminated choke coil. A laminated inductor (10) for use as a choke coil in a power supply circuit includes a rectangular parallelepiped-shaped laminated chip (1) and at least one pair of external electrodes (8) that are provided at the end of the laminated chip (1) and are conductively connected to the end of a coil. The laminated chip (1) includes a plurality of magnetic material layers (3) formed of an Ni—Zn—Cu ferrite, a plurality of conductive layers (2), which are laminated through the magnetic material layers (3) to constitute a coil, and at least one nonmagnetic layer (4) formed of a Ti—Ni—Cu—Mn—Zr—Ag-base dielectric material and formed in contact with a plurality of the magnetic material layers (3).

The invention relates to a ceramic particle reinforced composite wear-resistant part and a preparation method thereof. The method comprises the following steps: ceramic particles and metal powder are mixed evenly to fill in a special mould; then the mixture along with the mould is placed in a vacuum sintering furnace to sinter, wherein metal powder and ceramic particles are bound together to form a perform; after cooled, the mould is opened to take the perform out and place the perform on the side of the end face of a casting mold cavity; parent metal material is smelted by a medium-frequency induction furnace to form molten metal; during the casting, the molten metal is poured, metal powder in the perform is molten to form a cast-penetration path under the heat of molten metal, thus the molten metal can easily penetrate ceramic particles to form particle reinforced composite material in situ; and the surface layer of the obtained wear-resistant part consists of parent metal and composite material. The wear resistance of the composite material prepared by the method of the invention is ensured and the composite material has high impact resistance.

It is intended to provide highly stable variants of human antibody IgG2 and IgG3 subclasses. The present invention provides an IgG heavy chain comprising the constant region of a human IgG2 heavy chain having at least a substitution of Y for F at the 300th position, L for V at the 309th position, or A for T at the 339th position designated by the EU index of Kabat et al. and an IgG heavy chain comprising the constant region of a human IgG3 heavy chain having at least a substitution of K for N at the 392nd position or V for M at the 397th position designated by the EU index of Kabat et al. The present invention also provides monoclonal antibodies comprising these heavy chains.

A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member. This configuration allows to prevent a discharge of an electrostatic charge accumulated on the sensor panel, thereby providing a stable radiation detection apparatus with a high production yield.

To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of: epitaxial-growing a GaN layer 33 with a GaN low temperature grown buffer layer 32 upon a sapphire substrate 31; removing the sapphire substrate 31, the GaN buffer layer 32 and a small portion of the GaN layer 33 from the substrate taken out of a growth reactor to obtain a self-supporting GaN substrate 35; and after that, heat-treating the GaN substrate 35 by putting it into an electric furnace under the NH3 atmosphere at 1200° C. for 24 hours; which leads to a marked reduction of the warp of the self-supporting GaN substrate 35 such that dislocation densities of its obverse and reverse surface are 4x10<7 >cm<-2 >and 8x10<5 >cm<-2>, and thereby such a low ratio of dislocation densities of 50 is well-controlled.

Provided are a spinning apparatus capable of stably spinning fibers having a small fiber diameter with a high productivity, an apparatus comprising the same for manufacturing a nonwoven fabric, a process for manufacturing a nonwoven fabric using the nonwoven fabric manufacturing apparatus, and a nonwoven fabric produced by the process.

The spinning apparatus of the present invention comprises one or more exits for extruding liquid, which are capable of extruding a spinning liquid, and one or more exits for ejecting gas, which extend linearly and are located upstream of each of the exits for extruding liquid and which are capable of ejecting a gas, wherein a shearing force by the gas and its accompanying airstream can be single-linearly exerted on the spinning liquid extruded. The apparatus of the present invention for manufacturing a nonwoven fabric comprises a fibers collection means as well as the spinning apparatus. The process of the present invention for manufacturing a nonwoven fabric is a process using the apparatus for manufacturing a nonwoven fabric. The nonwoven fabric of the present invention is a nonwoven fabric produced by the process.

To provide a metal dome sheet 10 to which a metal dome 8 is attached. The metal dome 8 elastically deforms with a pressing operation of a key top 16, thereby to have electrical conduction with a contact 6 provided on a substrate 2, and restores from a deformed state when the pressing operation is released, thereby to release the conduction with the contact. The metal dome sheet 10 has an elastic pressing projection 12 which transmits pressing force applied from the key top 16 side to a top 8a of the metal dome 8.

The invention relates to a preparation method of a long carbon chain dibasic acid. C11 and upper alkane is used as a substrate to produce a corresponding long carbon chain dibasic acid product through the conversion of the substrate into the long carbon chain dibasic acid by using a microbial fermentation method as well as the extraction and the separation of fermentation liquid and the refining processes of a crude product of dibasic acid. Through technological innovation and process innovation, the invention researches a new preparation method of the long carbon chain dibasic acid, greatly decreases the production cost of the long carbon chain dibasic acid, improves the yield and the product quality of the long carbon chain dibasic acid, can produce C11 and upper long carbon chain dibasic acid, finally solve the bottleneck problem restricting the rapid development of the long carbon chain dibasic acid, and form the industrialized scale and the technological predominance. The long carbon chain dibasic acid produced by using the bioanalysis provided by the invention has the advantages of high acid generation level, low production cost, good product quality, complete variety, and the like, the prepared long carbon chain dibasic acid product has high single acid content, good light transmission and high thermal stability, can meet the requirements of different clients, and can be used for producing high-grade spices, high-performance engineering plastics, high-temperature dielectric medium, high-grade hot-melt adhesive, coldness-resistant plasticizer, high-grade lubricating oil, high-grade paint, coating, and the like. The invention greatly widens the development space of the downstream products of the long carbon chain dibasic acid.

The present invention relates to an optical glass having a refractive index nd of 1.86 or higher and an Abbé number v(nu)d of 28 to 36; a preform for precision press molding and an optical element that are comprised of this glass; and a method for manufacturing the optical element.

A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si_1-xM_x, is 0.1≦×≦0.7 in the case where M is Mn or 0.1≦×≦0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.