42results about How to "Reduce dislocation density" patented technology

The invention belongs to the technical field of crystal growth, and provides a low-resistivity silicon carbide single crystal growth method and system and a single crystal, silicon carbide powder is uniformly paved at the bottom of a graphite crucible, metal carbide material particles are uniformly paved on the surface of the silicon carbide powder, and silicon carbide seed crystals are adhered to the top of the graphite crucible; the graphite crucible is sealed, and the interior of the graphite crucible is vacuumized; heating the graphite crucible subjected to vacuumizing treatment, filling carrier gas into the graphite crucible, then slowly replacing the carrier gas with doped source gas, slowly increasing the growth pressure to a set pressure, and growing a buffer layer; after the growth of the buffer layer is completed, changing the growth condition to grow the heavily doped silicon carbide single crystal; and after the growth of the crystal is completed, cooling the graphite crucible subjected to vacuumizing treatment, so that the crystal is naturally cooled, and the low-resistivity silicon carbide single crystal is obtained. The doping concentration of the silicon carbide single crystal can be improved, and the resistivity of the silicon carbide material can be reduced.

The invention relates to a 4-inch low-dislocation indium antimonide lt; 211gt, 211gt; the invention discloses a preparation method of directional single crystals and belongs to the technical field of photoelectric materials. According to the method, a Czochralski method is adopted to grow the single crystal, a resistance furnace is arranged on the periphery of an induction coil of a heating device, and by accurately controlling heating conditions, designing a proper temperature field in a growth chamber and further combining growth conditions such as the state of a solid-liquid interface, the pulling speed, the rotating speed and particularly the shoulder expanding angle in the crystal growth process, the single crystal is obtained. The longitudinal temperature gradient in the crystal growth process is reduced, and the dislocation density of the large-size indium antimonide single crystal with the diameter of 4 inches can be obviously reduced, so that indium antimonide is enabled to be lt; 211gt, 211gt; the dislocation density of the directional single crystal is less than 100 / cm < 2 >.

The invention relates to the technical field of semiconductor light emitting diodes, and discloses a composite patterned substrate and a preparation method thereof. The preparation method comprises the following steps: preparing a SiO2 film layer on a substrate; coining glue is prepared on the SiO2 film layer; transferring the pattern of the soft template to the SiO2 film layer by using a nanoimprint technology; performing etching treatment on the SiO2 film layer to form a graphic structure with a preset morphology, and etching to remove part of the substrate material to form a pit to obtain a patterned substrate; preparing an AlN layer on the substrate, filling the pit with the AlN layer, and covering the surface of the graphic structure; carrying out photoetching treatment and etching treatment on the AlN layer, so that the AlN layer is filled in the pit and covers the side surface of a part of the pattern structure; and carrying out annealing treatment, and removing the residual photoresist to obtain the composite patterned substrate. By implementing the preparation method provided by the invention, the obtained composite patterned substrate can improve the crystal quality of the epitaxial layer, thereby improving the internal quantum efficiency and final brightness of the chip.

The invention relates to an LED epitaxial wafer, a growth method of a graphene layer and an LED chip, and belongs to the technical field of LEDs. The LED epitaxial wafer comprises a substrate, and a graphene layer, a buffer layer, an undoped GaN layer, an n-type GaN layer, a stress release layer, a multi-quantum well layer, an electron barrier layer and a p-type GaN layer which are sequentially epitaxially grown on the substrate, wherein the thickness of the single graphene layer is 0.5-1.5 nm, and the number of the graphene layers is at least two. According to the LED epitaxial wafer provided by the invention, the defect density in the GaN template layer is reduced through deposition of the graphene interlayer. Therefore, the recombination efficiency of electrons and holes is improved, so that the luminous efficiency of the LED is enhanced. Due to the existence of the graphene layer, the compressive strain of the chip is reduced, the influence of a polarization field is reduced, and the emission wavelength of electroluminescence (EL) is more stable.

The invention provides a method for heteroepitaxial growth of a gallium arsenide material on silicon by introducing laser surface treatment. The method comprises the following steps: growing a gallium arsenide low-temperature layer with a low crystallization degree on a silicon substrate, and crystallizing the surface layer of the gallium arsenide low-temperature layer by adopting a laser surface treatment mode; growing a gallium arsenide medium-temperature layer on the gallium arsenide low-temperature layer after the surface layer crystallization treatment, and purifying the surface layer crystalline state of the gallium arsenide medium-temperature layer by adopting a laser surface layer treatment mode; and growing a gallium arsenide high-temperature layer on the gallium arsenide medium-temperature layer after the surface layer crystalline state purification treatment. Under the condition that the crystallization degree of the whole gallium arsenide epitaxial layer is reserved, the crystallization degree of the local part, namely the upper surface of the epitaxial layer, is improved, the inhibition effect on dislocation is enhanced, and the optimization of the crystal quality of the whole epitaxial structure is realized. The dislocation penetrating to the surface of the whole epitaxial structure during heteroepitaxial growth of the gallium arsenide material on the silicon substrate is remarkably reduced, and a brand new way is opened up for preparing semiconductor photoelectric devices.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

The utility model discloses a light emitting diode epitaxial wafer and a light emitting diode. The light emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a U-GaN layer, an N-GaN layer, an insertion layer, a stress release layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence. Wherein the insertion layer at least comprises a Si3N4 layer. The light-emitting efficiency of the light-emitting diode provided by the utility model is obviously improved.

The invention discloses a yellowing-resistant flame-retardant plastic and a preparation method thereof, and relates to the technical field of polypropylene particle preparation. Potassium ethylene trifluoroborate and allyl hydrazine hydrochloride participate in propylene polymerization to prepare modified polypropylene, fluorine and boron elements are introduced, growth and reproduction of bacteria are inhibited, the antibacterial effect is achieved, meanwhile, potassium ions adsorb moisture in air, the antistatic effect is achieved, chloride ions are assisted, and the antibacterial performance is enhanced; then, the modified polypropylene particles are bombarded through silicon, tungsten and yttrium mixed plasma current, an amorphous silicon film is formed on the surface through in-situ growth, and the surface hardness and the overall mechanical strength of polypropylene are remarkably improved; by doping the tungsten element, the friction coefficient is reduced, the wear is reduced, the wear resistance and the mechanical property of the plastic are improved, the yttrium element is matched, grains are refined, the mechanical strength and the flexibility of the material are improved, and on the basis, the tungsten element and the yttrium element form a conductive network on the surface, so that generated electrostatic charges are quickly leaked, and the antistatic effect is achieved.

The utility model relates to the technical field of gallium oxide crystal growth, and discloses a crucible structure for growing a gallium oxide single crystal by a VB method, which comprises a crucible shell, a seed crystal cavity, a diameter-expanding cavity, a diameter-reducing cavity, a shoulder-expanding cavity and an equal-diameter cavity, the seed crystal cavity, the diameter-expanding cavity, the diameter-reducing cavity, the shoulder-expanding cavity and the equal-diameter cavity are arranged in the crucible shell, the seed crystal cavity is arranged at one end of the crucible shell, and the diameter-reducing cavity is arranged at the other end of the crucible shell. One end of the seed crystal cavity is closed, the other end of the seed crystal cavity is connected with the diameter-expanding cavity, the diameter-expanding cavity is connected with the diameter-reducing cavity, the diameter-reducing cavity is connected with the shoulder-expanding cavity, the shoulder-expanding cavity is connected with the equal-diameter cavity, and the other end of the equal-diameter cavity is open. Through reasonable design of a gallium oxide growth technology, the crucible shell, the seed crystal cavity, the diameter-expanding cavity, the diameter-reducing cavity, the shoulder-expanding cavity and the equal-diameter cavity are adopted, so that gallium oxide crystals can be separated from the crucible wall during growth and cooling, dislocation proliferation and twin crystal structures are not easy to appear, the crystal dislocation density is reduced, and the performance of a semiconductor chip is improved. The crucible structure can be used for preparing cylindrical gallium oxide single crystals with low dislocation density.

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.

This invention discloses a germanium photodetector and semiconductor device. The germanium photodetector includes: a silicon substrate; a first germanium thin film layer deposited on the silicon substrate; the first germanium thin film layer having multiple penetrating dislocations extending through its thickness; multiple pits corresponding one-to-one with the multiple penetrating dislocations formed on the surface of the first germanium thin film layer, and the inner surface of each pit being covered with an amorphous material layer; and a second germanium thin film layer deposited on the surface of the first germanium thin film layer and on the amorphous material layer within each pit, filling each pit. The amorphous material layer effectively blocks the extension of dislocations, reduces dislocation density, and ensures the photoelectric conversion efficiency of the device. Furthermore, by integrating the epitaxial chamber, deposition chamber, and pre-cleaning chamber into the same semiconductor device through a transfer chamber to produce the germanium photodetector, the contact path of external contaminants is reduced, the process flow is simplified, production efficiency is improved, and space and cost are optimized.

The invention provides a preparation method of a composite patterned substrate, the composite patterned substrate and an LED chip, and the method comprises the steps: forming a plurality of holes in the surface of a sapphire substrate, and carrying out the gluing, exposure and development processing, and obtaining a preset pattern; depositing a SiOF layer on the substrate; removing the preset pattern below the SiOF layer through heat treatment to form a cavity; transferring a pattern on the substrate through a nanoimprint technology; and performing inductively coupled plasma etching to form a composite pattern structure. A cavity structure is formed in a sapphire substrate through laser drilling and heat treatment, the light extraction efficiency of an LED is improved by combining with a composite pattern constructed by a nanoimprint technology and utilizing a multi-interface light scattering effect, the propagation direction of light rays can be guided by combining a patterned structure with a cavity, light emitting angle distribution is optimized, and light emitting is more uniform or the directivity is more concentrated; epitaxial growth stress is released through the cavity, dislocation density is reduced, epitaxial layer cracks are effectively inhibited, and crystal integrity is improved.

The present invention relates to a gallium oxide film and a preparation method thereof and an ultraviolet detection device. The preparation method comprises: growing a gallium oxide buffer layer on a substrate; forming a gallium vacancy gallium oxide layer on a surface of the gallium oxide buffer layer away from the substrate; growing a gallium oxide layer on a surface of the gallium vacancy gallium oxide layer away from the substrate; obtaining the gallium oxide film; and in the process of forming the gallium vacancy gallium oxide layer, intermittently introducing an oxygen source and performing an annealing treatment. The preparation method of the present invention obtains a gallium vacancy gallium oxide layer rich in gallium vacancies by intermittently introducing an oxygen source, thereby reducing the dislocation density of the gallium oxide film. When applied to an ultraviolet detection device, the performance and reliability of the device are improved.

The invention discloses a low-dislocation and low-stress P-type silicon carbide crystal and a silicon carbide substrate, and belongs to the technical field of silicon carbide material preparation. A plurality of silicon carbide substrates are prepared in areas, which are more than 1mm away from a seed crystal face, of the P-type silicon carbide crystal, the number of BPD in any square area with the size of 1cm * 1cm in the 2 / 3 radius range on any silicon carbide substrate is not more than 500 / cm < 2 >, and the average value of BPD density in the 2 / 3 radius range is not more than 100 / cm < 2 >. The overall dislocation of the P-type silicon carbide crystal is lower than that of the existing P-type silicon carbide crystal, and the quality of the silicon carbide substrate prepared close to the surface of the silicon carbide crystal is the same as that of the silicon carbide substrate prepared by other silicon carbide crystals at the height, so that the silicon carbide crystal has no residual liquid drop influence and is good in overall axial uniformity.

This invention discloses a rapid annealing apparatus and method for micro / nano-scale metal samples. A metal indenter and a micro / nano-scale metal sample are prepared separately. The micro / nano-scale metal sample is placed at the fixed end of an electromechanical sample rod, while the metal indenter is mounted on the movable end, with the two ends facing each other without contact. Under a transmission electron microscope, the metal indenter is aligned and brought closer to the sample by a piezoelectric ceramic drive. After the indenter and the micro / nano-scale metal sample reach critical contact, several pulsed currents are applied. Then, by controlling the displacement of the piezoelectric ceramic, the cyclic movement of the metal indenter is achieved, thereby applying a constant strain amplitude of pressure-pressure cyclic loading to the micro / nano-scale metal sample. Then, pulsed currents are applied again, and this process is repeated multiple times, thus achieving rapid annealing of the micro / nano-scale metal sample using electromechanical coupling. The micro / nano-scale metal sample annealing method of this invention allows for in-situ observation at the micro / nano scale, with controllable parameters, high success rate, high efficiency, and good stability.

The application provides a GaN-based light-emitting diode epitaxial structure and a preparation method thereof, wherein a Zn source is introduced as a surface activator during the growth of a P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed, and specifically, through the core role of the Zn surface activator and the innovative design of the gradient distribution of the Zn concentration, the valence band Ev is smoothly and non-peaked along the whole process, and the hole injection is smooth along the whole process under the premise of ensuring that the conduction band Ec is smoothly and non-peaked and the strong electron blocking capability is not lost.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The present invention discloses a sapphire composite substrate and a method for manufacturing the same. The composite substrate comprises a thinned sapphire substrate, a defect barrier layer disposed on the front of the thinned sapphire substrate, a thickening layer for preventing the thinned sapphire substrate from bending, and an adhesive layer for bonding the thickening layer to the back of the thinned sapphire substrate; the defect barrier layer is provided with a plurality of openings, the defect barrier layer is made of a transparent non-conductive material, the lattice of the transparent non-conductive material matches the lattice of the epitaxial layer, and the thickening layer is made of a thermally conductive material. The present invention forms a defect barrier layer with a plurality of openings on the thinned sapphire substrate, effectively reducing the dislocation density of the gallium nitride epitaxial material and reducing the lattice defects; the thickening layer is formed on the back of the thinned sapphire substrate, which can reduce the warping of the substrate.

The invention provides a manufacturing method of a resonant cavity light-emitting diode, which comprises the following steps of: performing epitaxial manufacturing on a first type semiconductor layer in a window with a smaller area, so that the crystal quality is improved, and the reliability of a device is improved; an active layer, a second-type semiconductor layer and a first reflecting layer are sequentially manufactured in an epitaxial mode and inversely arranged on the bearing substrate, the area of the first-type semiconductor layer is gradually reduced in the direction away from the bearing substrate, a second reflecting layer is manufactured on the inclined wall of the first-type semiconductor layer, and the first reflecting layer and the second reflecting layer form a resonant cavity; light is reflected for multiple times in the resonant cavity, so that the light resonance effect is improved, the light has a narrower wavelength peak, and the spectral purity is improved; the upper surface, far away from the bearing substrate, of the first type semiconductor layer is a light outlet, the area of the light outlet is the smallest, and the directivity and collimation of light emitting can be improved.

The application discloses a kind of high-strength plastic β titanium alloy strip and whole-process preparation method, the β titanium alloy strip is composed of the following mass percentage components: Cr 7.7%~8.3%, Mo 4.9%~5.5%, V 4.9%~5.5%, Al 2.7%~3.3%, Fe≤0.20%, C≤0.03%, N≤0.02%, H≤0.010%, O≤0.10%, and the rest is Ti;The preparation method comprises: one, forging;Two, hot rolling;Three, cold rolling;Four, heat treatment.The β titanium alloy strip and whole-process preparation method of the application are overall planning from component design to final heat treatment whole-process procedure, improve production efficiency, shorten preparation time, and the β titanium alloy strip solid solution state microstructure is equiaxed β fine grain structure, strength-plasticity matching is high, horizontal longitudinal organization performance is uniform, with excellent comprehensive mechanical properties, applicable to metal processing field.

This invention discloses a method for fabricating an LED epitaxial structure, wherein a stress relief layer is grown on an N-type semiconductor layer; the stress relief layer comprises an InGaN layer, a GaN layer, and an Al layer grown sequentially according to a first preset cycle. Y Ga1 Y N layer and B X Ga1 X N layers; growing Al Y Ga1 Y In the N-layer stage, the reaction chamber temperature is set to 700-900℃, the reaction chamber pressure to 100-500 mbar, and 25-1000 sccm of TMAl and 25-1000 sccm of TEGa are introduced into the reaction chamber to form Al. Y Ga1 Y N layers; during the growth of B X Ga1 X In the N-layer stage, the reaction chamber temperature is set to 700-950℃, the reaction chamber pressure to 100-500 mbar, and 25-1000 sccm of TEB and 25-1000 sccm of TEGa are introduced into the reaction chamber to form B. X Ga1 X N layers. This invention can improve the crystal quality of the subsequent multi-quantum-well active region, enabling the LED epitaxial structure to have better luminous efficiency and device reliability.

The invention discloses a manufacturing method of a vertical PIN diode structure and the vertical PIN diode structure, and the manufacturing method comprises the steps: providing a substrate which is provided with a first surface and a second surface which are opposite to each other; forming an epitaxial structure on the first surface, wherein the epitaxial structure comprises an N-type buffer layer, an intrinsic layer, a P-type doped layer and a P-type heavily doped layer which are sequentially arranged in the direction away from the substrate; forming a first electrode on the surface of the P-type heavily doped layer, wherein the first electrode exposes part of the P-type heavily doped layer; performing N ion implantation in the exposed region of the P-type heavily doped layer to form a plurality of field ring structures arranged at intervals; forming a second electrode on the second surface; and forming a passivation layer exposing part of the first electrode on the P-type heavily doped layer. According to the manufacturing method of the vertical PIN diode structure and the vertical PIN diode structure, N ion implantation is adopted to form a field ring structure, and device performance and device isolation are achieved at the same time.

A semiconductor device includes a semiconductor film including a Schottky junction region and an ohmic junction region; a Schottky electrode disposed on the Schottky junction region of the semiconductor film; and an ohmic electrode disposed on the ohmic junction region, the semiconductor device characterized in that a dislocation density of the Schottky junction region of the semiconductor film is smaller than a dislocation density of the ohmic junction region of the semiconductor film.

The application belongs to the technical field of high-temperature alloy processing, and particularly relates to a nickel-based high-temperature alloy ultra-thin foil and a preparation method and application thereof. According to the application, the cold rolling deformation of each pass is limited to 10% to 30%, a 1050 DEG C to 1100 DEG C stress relief annealing cycle rolling mechanism is matched when the cumulative deformation reaches 65% to 70%, and a 1170 DEG C to 1230 DEG C solid solution treatment process is coupled to the 0.02 mm to 0.03 mm ultra-thin intermediate blank, so that the problems of strip breakage, poor plate shape precision, low thickness uniformity, large internal stress, insufficient room temperature and high-temperature tensile strength in the prior art can be solved, and thus the nickel-based ultra-thin foil with high mechanical properties can be stably prepared.

The embodiment of the present invention discloses a wrapped patterned composite substrate, a preparation method and an LED epitaxial wafer. The wrapped patterned composite substrate includes a substrate substrate and a plurality of composite patterned microstructures formed on the substrate substrate; the composite patterned microstructure includes a central protruding microstructure and a crater-shaped annular protruding microstructure, the bottom of the central protruding microstructure is integrally connected to the substrate substrate, and the crater-shaped protruding microstructure is made of a heterogeneous material; the crater-shaped annular protruding microstructure is arranged around the central protruding microstructure, and wraps the bottom of the central protruding microstructure, exposing the top of the central protruding microstructure. The embodiment of the present invention solves the problem that the C-surface of the existing patterned composite substrate has defects and low light emission efficiency, and can increase the interface area and inclination angle of the composite patterned microstructure with a refractive index difference, thereby improving the light emission probability; at the same time, it can reduce the dislocation density of the epitaxial material during epitaxial growth, and improve the crystallization quality of the epitaxial material.

The present invention discloses a structure of an antimonide quantum well CMOS device and a preparation method thereof, belonging to the field of microelectronic technology. The device structure comprises: a substrate; a buffer layer is provided on the substrate; a p-channel antimonide quantum well layer and an n-channel antimonide quantum well layer are relatively independently provided on the buffer layer; a passivation isolation layer is provided between the p-channel antimonide quantum well layer and the n-channel antimonide quantum well layer. The antimonide quantum well structure provided by the present invention can, on the one hand, reduce the dislocation density caused by lattice mismatch through component regulation, and on the other hand, effectively isolate the channel from the high-k gate medium through a barrier layer, and form a two-dimensional electron / hole gas on the channel surface, thereby improving the mobility and improving the device performance. The present invention also provides a method for preparing an antimonide quantum well CMOS device, which realizes the epitaxial growth of n-channel and p-channel materials of the same system.

The application relates to the field of semiconductor photoelectric devices, and particularly discloses a hydrolysis-resistant blue-green LED epitaxial wafer, a preparation method thereof and an LED. The hydrolysis-resistant blue-green LED epitaxial wafer comprises a substrate and a buffer layer, a composite layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer arranged on the substrate in sequence; the composite layer comprises a first three-dimensional GaN layer, a second three-dimensional GaN layer, an InGaN layer, a superlattice layer, a third three-dimensional GaN layer and a two-dimensional GaN layer which are stacked on the buffer layer in sequence; and the superlattice layer comprises AlN layers and GaN layers which are alternately stacked. By implementing the application, the hydrolysis resistance of the blue-green LED can be improved.

The application discloses a kind of tellurium zinc cadmium polycrystal synthesis device and method thereof, specifically related to crystal preparation technical field, including installation base, the four corners of the upper surface of the installation base are all fixedly connected with support column, and the bottom of four support columns is fixedly connected with the four corners of the lower surface of installation top plate respectively, the inner wall of installation top plate is fixedly connected with the outer surface of fixed frame.The application is provided with heat preservation water tank, heating furnace, annular flow guide pipe and vacuum cover, the liquid in the heat preservation water tank is injected into the annular flow guide pipe by the water pump arranged in the heat preservation water tank, at the same time, the heat absorbed by the liquid is used to assist the temperature rise of the vacuum cover, so that the resources required for improving the temperature inside the vacuum cover are reduced, the consumption of resources during use of the synthesis device is effectively reduced, the cost of producing tellurium zinc cadmium is reduced, and the processing quality of tellurium zinc cadmium is guaranteed by the way of auxiliary temperature rise and temperature drop.

A crystal annealing apparatus and method are disclosed. The apparatus includes an annealing mechanism comprising a heating component forming an annealing chamber; a heat-preserving mechanism installed inside the annealing chamber, also having a heat-preserving chamber; a crucible body installed within the heat-preserving chamber; and a silicon carbide powder buffer filling the inner cavity of the crucible body, with multiple crystal accommodating spaces within it. The method involves filling the inner cavity of the crucible body with a silicon carbide powder buffer, and arranging multiple crystals spaced apart within the buffer; placing the crystal annealing apparatus carrying the crucible body in a crystal growth furnace; and annealing the crystal using a temperature gradient heating and staged differential rate cooling process to reduce internal thermal stress in the crystal. Simultaneously, the thermal stability and uniform thermal conductivity of silicon carbide powder buffer the thermal stress generated by temperature changes in the crystal. This invention effectively optimizes crystal stress, improves crystal quality, and effectively solves the technical problems of crystal cracking, stress superposition, high dislocation density, and insufficient purity.

The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5 < x ≤ 1.0) single crystal to the bonding layer; and epitaxially growing an ultraviolet emission device layer on the seed crystal layer of the laminated substrate, the ultraviolet emission device layer having at least: a first conductive clad layer composed of AlyGa1-yN (0.5 < y ≤ 1.0); an AlGaN-based active layer; and a second conductive clad layer composed of AlzGa1-zN (0.5 < z ≤ 1.0). This provides a method for manufacturing an inexpensive, high-quality epitaxial wafer for an ultraviolet ray emission device.