The invention belongs to the technical field of semiconductor materials, and relates to a Ge/Si1-xGex super-lattice structure and preparation thereof. The high quality strain Ge/Si1-xGex super-lattice structure comprises a Si substrate, and a Si0.2Ge0.8 virtual substrate layer, a B-doped Si0.2Ge0.8 epitaxial layer, a Si0.2Ge0.8 blocking layer, a Ge/Si1-xGex super-lattice layer, a P-doped Si0.2Ge0.8 epitaxial layer, a Si0.2Ge0.8 blocking layer and a Si protective layer sequentially and epitaxially grown on the Si substrate, wherein x is more than or equal to 0.6 and less than or equal to 0.7. The epitaxial layers are sequentially grown on the Si substrate by adopting a reduced pressure chemical vapor deposition method; the obtained super-lattice structure has the properties of low dislocation defect density, low thickness and flat interface/surface, and the Ge/Si1-xGex super-lattice is in a strain state; and the super-lattice structure has high quality and is particularly suitable for manufacturing silicon-based laser devices and waveguide modulators.