7 results about "Lateral overgrowth" patented technology

The invention concerns an optoelectronic device comprising a hole injection channel with inclined sidewalls extending through the active layer and an underlying first n-doped layer, such that charge carriers from a second p-doped layer arranged above the active layer are injected both vertically and laterally into the underlying active layer. Improved mobility of holes and a resultant higher rate of recombination results in improved quantum efficiency. The dimensions and location of the hole injection channel are controllable, allowing greater uniformity of performance. A method of manufacturing such an optoelectronic device based on an epitaxial lateral overgrowth process and an optoelectronic arrangement comprising such optoelectronic devices are also disclosed.

A heterogeneous epitaxial structure formed on a SiC (silicon carbide) substrate. An intermediate layer comprising AIN is formed overlying the SiC substrate. The surface of the intermediate layer comprises AIN formed by lateral epitaxial growth. The lateral epitaxial growth merges to form the surface comprising a MELO layer (merged epitaxial lateral overgrowth). The intermediate layer includes a carbon layer underlying the MELO layer. At least one device layer comprising GaN (gallium nitride) is formed overlying the surface of the intermediate layer in which one or more semiconductor devices are formed. The carbon layer is heated to fracture portions of the intermediate layer to separate the SiC substrate from the intermediate layer. The SiC substrate is not consumed by the separation thereby allowing perpetual reuse in semiconductor wafer processing.

A method for manufacturing an electronic component is provided.The method comprises: forming a first semiconductor layer on or above a substrate having a second semiconductor layer laterally adjacent to a dielectric structure, by means of an epitaxial lateral overgrowth method such that the first semiconductor layer laterally overgrows the dielectric structure from the second semiconductor layer; wherein the first semiconductor layer and the second semiconductor layer comprise or are formed from a semiconductor material; forming a third semiconductor layer on or above the first semiconductor layer such that the first semiconductor layer and the third semiconductor layer have a common interface, wherein the third semiconductor layer is configured to have a light-generating layer structure of the vertical surface emitter; and removing the substrate and removing at least part of the first semiconductor layer.

The invention relates to a method of manufacturing a stacked structure comprising a layer of semiconductor material bonded to a substrate, comprising: the fabrication of a heterostructure by: forming an intermediate layer made of a two-dimensional material on a growth substrate (1); shaping the intermediate layer with a plurality of openings to form a shaped intermediate layer (3); growing a semiconductor material on the shaped intermediate layer (3) by epitaxial lateral overgrowth to form a continuous epitaxial layer (4) on the shaped intermediate layer; the formation of a first assembly by bonding the heterostructure to a manipulation substrate (6), the continuous epitaxial layer being located at the bonding interface;the separation of the first set at the level of the modeled intermediate layer (3) so as to obtain a second set resulting from the transfer of the continuous epitaxial layer (4) from the heterostructure to the manipulation substrate (6). Figure for the abstract: Figure 7;

The invention concerns an optoelectronic device configured to achieve uniform charge carrier injection into the active region through a plurality of cavities with controllable position, dimensions, and distribution density. The plurality of cavities is formed through partial coalescence of lateral growth fronts in a facet controlled epitaxial lateral overgrowth (FACELO) process prior to device heterostructure deposition.

A method for fabricating a semiconductor device includes forming a growth-limiting mask on or above a group III nitride substrate, and growing one or more island-shaped group III nitride semiconductor layers on the group III nitride substrate using the growth-limiting mask. The group III nitride substrate has an in-plane off-angle orientation distribution of more than 0.1°, and the off-angle orientation of the m-plane oriented crystalline surface plane is within a range of about +28° to about -47° toward the c-plane. At least one long side and one short side of the island-shaped group III nitride semiconductor layer is perpendicular to the a-axis of the island-shaped group III nitride semiconductor layer. The island-shaped group III nitride semiconductor layer is not merged with neighboring island-shaped group III nitride semiconductor layers.

A method of forming two semiconductor wafers from a single reuseable semiconductor wafer is disclosed. The two semiconductors can be used for wafer processing or to generate new semiconductor wafers. A patterned layer is formed in a silicon carbide (SIC) substrate. The patterned layer includes a heatable material. An epitaxial layer is grown by epitaxial lateral overgrowth overlying the patterned layer to form a surface overlying the SiC substrate. At least one epitaxial layer by epitaxial vertical overgrowth is grown overlying the epitaxial layer. The heatable material is heated by one or more lasers to fracture or weaken the patterned layer. The epitaxial layer and the at least one epitaxial layer comprises a SiC epitaxial substrate. The SiC substrate is separated from the SiC epitaxial substrate.