7 results about "Hydride vapour phase epitaxy" patented technology

A semiconductor stack including a base substrate; and a PN junction structure including an n-type semiconductor layer on the base substrate and a p-type semiconductor layer on the n-type semiconductor layer, the n-type semiconductor layer being constituted from a group III nitride crystal containing an n-type impurity, the p-type semiconductor layer being constituted from a group III nitride crystal containing Mg as a p-type impurity, and the n-type semiconductor layer and the p-type semiconductor layer constituting a PN junction, or a PI junction structure including an i-type semiconductor layer on the base layer and the p-type semiconductor layer on the i-type semiconductor layer, the i-type semiconductor layer being constituted from a group III nitride, and the i-type semiconductor layer and the p-type semiconductor layer constituting a PI junction.

IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

This invention discloses a fluorine ion implantation process for high-voltage, low-leakage-current GaN Schottky diodes, relating to the field of semiconductor device fabrication technology. The specific steps of this process are: using a specific doping concentration of n... + -GaN bulk substrate, n-type substrate grown using hydride vapor phase epitaxy. ‑ - GaN drift layer; deposition of hard mask and self-aligned fluorine ion implantation to form a distribution region; removal of mask and deposition of polarization matching layer; electrode fabrication and annealing; finally, the fabricated diode is subjected to characteristic testing, and the process parameters of polarization matching layer and fluorine ion implantation are adjusted according to the results; this invention adopts a self-aligned implantation process to achieve simultaneous patterning of mesa isolation and fluorine ion implantation region, improving device withstand voltage and reducing leakage current; it also systematically optimizes the entire device fabrication process, improves bonding quality, reduces lattice defects, optimizes interface and contact effects, enhances fabrication repeatability and stability, simplifies the process, and improves efficiency.

Methods to produce and recycle substrates for III-nitride materials with electrochemical etching of highly doped n-type sacrificial layers and a fast hydride vapor phase epitaxy (HVPE) layer deposition to tackle the problems brought by wafer bowing and off-angle distribution in the substrate production process. These methods also showcase designs for sacrificial layers with specific fabrication structures, enabling high-quality substrate recycling, reducing the cost of buffer layer growth or mask layer fabrication, and resulting in a consistently smooth, epi-ready substrate surface that is suitable for direct regrowth without additional polishing steps, thereby enhancing efficiency and reducing processing costs.

Described herein are systems and methods which utilize solid, elemental germanium as a source for hydride vapor phase epitaxy (HVPE). These systems and methods may reduce costs by simplifying the growth process and reactor design and eliminate the need for expensive Ge gas precursors. Additionally, the described process may be useful as a way to recycle Ge, as Ge scarcity is a potential concern.

The invention belongs to the technical field of epitaxial growth of nitride crystals, and particularly relates to a method for growing nitride epitaxy and crystals based on hexagonal boron nitride quasi-single crystals. The preparation method comprises the following steps: preparing a hexagonal boron nitride pseudo-single crystal substrate with a crystal face (002) corresponding to the highest X-ray diffraction peak intensity, and growing a nitride epitaxial layer on the pretreated substrate by adopting metal organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, physical vapor transport or magnetron sputtering deposition. The reaction temperature in the growth process is regulated and controlled, so that the thickness of the nitride epitaxial film or the bulk single crystal is greater than 2 microns, and the nitride epitaxial film or the bulk single crystal does not generate through cracks in the whole epitaxial process. According to the method, the hexagonal boron nitride pseudo-single crystal which is soft in material and free of dangling bonds on the surface of the two-dimensional layer is directly adopted as the substrate, after nitride epitaxial crystals grow on the surface of the substrate, the interface does not have stress theoretically, and the nitride epitaxial thick film material which is complete and not prone to cracking is obtained.