26 results about "Hydride vapour phase epitaxy" patented technology

The invention provides a method for growing an aluminum nitride thick film through a hydride vapor phase epitaxy method, and belongs to the technical field of third-generation semiconductor material preparation. According to the method, an aluminum source area in HVPE equipment is improved, supply of a multi-partition independent control aluminum source is provided, a periodic etching control strategy of an HCl gas channel is introduced, and a nested collaborative epitaxy method of outer-layer aluminum source rotation and inner-layer growth cycle embedded etching is formed. The problems of aluminum source degradation, nozzle blockage and stress accumulation in existing HVPE growth can be effectively solved, and long-time continuous operation of epitaxial AlN of the HVPE equipment is achieved; interruption and replacement operations caused by degradation of the aluminum source in long-time growth are avoided; nozzle area deposition is effectively removed, and the flow field stability is maintained; the stress is dynamically released, the crack occurrence rate is reduced, the film layer integrity is improved, and the method is suitable for HVPE equipment transformation and upgrading.

The invention relates to the technical field of semiconductor material preparation, in particular to a gallium nitride single crystal wafer material preparation method which comprises the following steps: placing a silicon carbide substrate slice larger than a standard size in an accommodating groove of a graphite tray, and installing a cylindrical silicon nitride ceramic protective cover to assemble a substrate tray; putting the substrate tray into a magnetron sputtering growth chamber to prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film in sequence; the substrate tray is placed in a high-temperature and high-vacuum annealing furnace chamber for high-temperature and high-vacuum annealing treatment, and the substrate tray is placed in a hydride vapor phase epitaxy reaction chamber for preparing the gallium nitride single crystal thick film material; cutting, grinding and polishing the peeled gallium nitride single crystal thick film wafer with the size larger than the standard size to obtain a gallium nitride single crystal wafer material with the standard size; and the stripped silicon carbide substrate slice and the used cylindrical silicon nitride ceramic protective cover can be repeatedly used after being cleaned. According to the method, low-stress, low-dislocation-density, low-cost and high-yield preparation of the standard-size gallium nitride single crystal wafer material can be realized.

The invention belongs to the technical field of semiconductors, and particularly relates to a method for reducing dark current of an aluminum gallium nitrogen ultraviolet photoelectric detector, which comprises the following steps: immersing a pre-cleaned sapphire substrate in a mixed solution for oxidation etching, the solution being a mixed solution of an oxidizing agent and an etching agent; the etched sapphire template is taken out, washed for a period of time and dried; transferring the dried sapphire into hydride vapor phase epitaxy equipment, keeping for a period of time at high temperature in a mixed atmosphere, and then epitaxially growing an aluminum-gallium-nitrogen epitaxial layer to form an aluminum-gallium-nitrogen / sapphire template; and preparing the ultraviolet photoelectric detector on the aluminum gallium nitride / sapphire template through ultraviolet lithography and electron beam evaporation processes. The method provided by the invention can effectively remove silicon pollutants at the growth interface of aluminum gallium nitrogen and sapphire and reduce interface leakage current caused by silicon impurities, so that the dark current of the aluminum gallium nitrogen ultraviolet photoelectric detector is remarkably reduced.

Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

A semiconductor stack including a base substrate; and a PN junction structure including an n-type semiconductor layer on the base substrate and a p-type semiconductor layer on the n-type semiconductor layer, the n-type semiconductor layer being constituted from a group III nitride crystal containing an n-type impurity, the p-type semiconductor layer being constituted from a group III nitride crystal containing Mg as a p-type impurity, and the n-type semiconductor layer and the p-type semiconductor layer constituting a PN junction, or a PI junction structure including an i-type semiconductor layer on the base layer and the p-type semiconductor layer on the i-type semiconductor layer, the i-type semiconductor layer being constituted from a group III nitride, and the i-type semiconductor layer and the p-type semiconductor layer constituting a PI junction.

The present application relates to a semiconductor structure, a self-supporting gallium nitride layer and a method for preparing the same. The method for preparing the semiconductor structure includes providing a substrate, forming a patterned mask layer on the surface of the substrate, and the patterned mask layer has openings; placing the substrate in a hydride vapor epitaxy device; forming a gallium nitride seed layer in the openings and on the surface of the patterned mask layer facing away from the substrate, the gallium nitride seed layer includes a first region located in the openings and a second region located on the surface of the patterned mask layer, and the dislocation density in the first region is greater than that in the second region; etching the gallium nitride seed layer to remove all or part of the gallium nitride seed layer located in the first region; introducing a doping gas into the hydride vapor epitaxy device to form a doped thick film gallium nitride layer. The method for preparing the semiconductor structure can improve the crystal quality of the doped thick film gallium nitride layer, contribute to the automatic peeling of the subsequent doped thick film gallium nitride layer, reduce the series resistance of the device, and increase the tunneling current.

The utility model provides a vertical gallium boat and hydride vapor phase epitaxy equipment, the vertical gallium boat comprises a first chamber and at least one second chamber, the first chamber is provided with an inlet, and the second chamber is arranged above the first chamber and is communicated with the first chamber; the volume of at least one second cavity is smaller than that of the first cavity, and one second cavity is provided with an outlet; a portion of the gallium source entering the first chamber from the inlet enters the at least one second chamber from the first chamber; and a gallium-containing growth source generated by the reaction of the gallium source and the gas source is discharged through the outlet. According to the scheme, the gallium sources can be distributed in the first chamber and the second chamber in the vertical direction, and the gas source introduced from the first chamber sequentially reacts with the gallium sources in the different chambers, so that the contact area and the reaction time between the gas source and the gallium sources are prolonged, the reaction conversion rate is increased, and the yield is increased. The controllable degree of the reaction process can be improved, so that the stable quality of the gallium-containing growth source is ensured, and the method can be applied to the field of growth of gallium nitride products.

Disclosed herein is the controlled epitaxy of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator.

The application relates to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof, which comprises the following steps: providing a substrate; forming a patterned mask layer on the surface of the substrate; providing a hydride vapor phase epitaxy device; placing the substrate with the patterned mask layer into a substrate area; providing a first reaction gas containing hydrogen chloride to a gallium boat area through a first gas supply pipeline and providing a second reaction gas containing ammonia to the substrate area through a second gas supply pipeline to form a gallium nitride seed layer; stopping the first reaction gas from being provided to the gallium boat area and stopping the second reaction gas from being provided to the substrate area, and providing a third reaction gas containing hydrogen chloride to the substrate area through a third gas supply pipeline to completely remove the gallium nitride seed layer in a crystal grain area or make the thickness of the gallium nitride seed layer in the crystal grain area less than the thickness of the gallium nitride seed layer in an overgrowth area; and forming a thick film gallium nitride layer. The application can save raw material cost and improve the quality of the thick film gallium nitride layer.

The present invention relates to a Ga2O3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga2O3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga2O3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

The application relates to a semiconductor structure, a self-supporting gallium nitride layer and a preparation method thereof, and comprises the following steps: providing a substrate; placing the substrate in a hydride vapor phase epitaxy device; introducing a nitrogen-containing gas and a silicon-containing gas into the hydride vapor phase epitaxy device, the nitrogen-containing gas and the silicon-containing gas react to form a patterned mask layer on the substrate, and the patterned mask layer has a plurality of pores; stopping the introduction of the silicon-containing gas into the hydride vapor phase epitaxy device, continuously introducing the nitrogen-containing gas into the hydride vapor phase epitaxy device, and introducing hydrogen chloride gas into the hydride vapor phase epitaxy device to form a gallium nitride layer in the pores and on the surface of the patterned mask layer away from the substrate. By introducing the nitrogen-containing gas and the silicon-containing gas into the hydride vapor phase epitaxy device, the patterned mask layer with a plurality of pores can be formed on the substrate, without the process steps such as photolithography and etching, so that the process flow is greatly simplified, and the production efficiency is improved.

The present invention discloses a method and apparatus for growing a III-V compound single crystal by hydride vapor phase epitaxy. The method comprises: introducing a III element source, a nitrogen source, and a carrier gas into a HVPE reaction chamber, and sequentially passing through a first region, a second region, and a third region of the reaction chamber, adjusting the first region, the second region, and the third region of the reaction chamber to a first temperature, a second temperature, and a third temperature, respectively, causing the III element source and the nitrogen source to react in the first region to form a III nitride single crystal, causing the III element source and hydrogen to react in the second region to form a III element element, and causing the nitrogen source and a halogen hydride to react in the third region to form an ammonium salt. An embodiment of the present invention provides a method for growing a III nitride single crystal by hydride vapor phase epitaxy, which improves the yield and purity of the III nitride single crystal, can recover the III element element element, and reduces the preparation cost of the III nitride single crystal.

The present application relates to the technical fields of semiconductor material preparation, and particularly relates to a preparation method of gallium nitride single wafer material, which comprises the following steps: placing a silicon carbide substrate sheet larger than a standard size in a containing groove of a graphite tray and assembling a cylindrical silicon nitride ceramic protective cover into the substrate tray to form a substrate tray; placing the substrate tray into a magnetron sputtering growth chamber to sequentially prepare a zinc-aluminum-oxygen polycrystalline thin film and an aluminum nitride polycrystalline thin film; placing the substrate tray into a high-temperature high-vacuum annealing furnace chamber to perform high-temperature high-vacuum annealing treatment; placing the substrate tray into a hydride vapor phase epitaxy reaction chamber to prepare a gallium nitride single thick film material; performing cutting, grinding and polishing processing on the peeled-off gallium nitride single thick film wafer larger than the standard size to obtain a standard-size gallium nitride single wafer material; and cleaning the peeled-off silicon carbide substrate sheet and the used cylindrical silicon nitride ceramic protective cover for reuse. The present application can realize low-stress, low-dislocation density, low-cost and high-yield preparation of the standard-size gallium nitride single wafer material.

The invention discloses a method for repairing a gallium nitride finished single crystal with local defects, and belongs to the field of gallium nitride single crystal substrate manufacturing. According to the principle that free energy required by corrosion is reduced due to local energy in a local defect area of a gallium nitride finished product single crystal material relative to a normal area, a chemical agent or a high-temperature atmosphere is adopted to carry out directional corrosion treatment on a defect part in a defective area, and hydride vapor phase epitaxy (HVPE) equipment is put again to carry out remelting epitaxy for 0-100 microns; the corroded area is healed again, the defective area is repaired after grinding and polishing, and the finished single crystal is prepared. According to the method, only the surface of the defective single crystal needs to be repaired by growing 0-100 microns, and compared with the method for preparing the finished single crystal by re-growing 700 microns of thickness, the cost can be greatly reduced, and the product yield can be improved.

The application relates to a semiconductor structure, a self-supporting doped gallium nitride layer and a preparation method of the semiconductor structure. The preparation method of the semiconductor structure comprises the following steps: providing a substrate; placing the substrate in a hydride vapor phase epitaxy device; introducing a nitrogen-containing gas and a silicon-containing mixed gas into the hydride vapor phase epitaxy device, the nitrogen-containing gas and the silicon-containing mixed gas react to form a patterned mask layer on the substrate, and the patterned mask layer has a plurality of pores; after adjusting the flow of the silicon-containing mixed gas, continuously introducing the silicon-containing mixed gas and the nitrogen-containing gas into the hydride vapor phase epitaxy device; and introducing hydrogen chloride gas into the hydride vapor phase epitaxy device to form a doped gallium nitride layer in the pores and on the surface of the patterned mask layer away from the substrate. The preparation method provided by the above embodiment is not easy to introduce new pollution, and can simplify the design of the hydride vapor phase epitaxy device.

The invention belongs to the technical field of single crystal epitaxy, and particularly relates to a hydride vapor phase epitaxial growth system and method for gallium oxide epitaxial growth. The specifically designed containing device is introduced into the growth system, the containing device and the substrate form the closed cavity, and the closed cavity is in negative pressure through the flow velocity design of the gas inlet and the gas outlet of the containing device, so that the substrate is sucked on the containing device, the back surface of the substrate is completely isolated from the reaction gas in the reaction chamber, and the reaction time is shortened. The formation of a gallium oxide epitaxial layer on the back surface of the substrate is avoided, and the yield of workpieces is improved. The gas inlet and the gas outlet are formed in the side wall and the bottom of the containing device respectively, gas in the closed cavity enters and exits, the influence of gas in the reaction chamber on the containing device is avoided, it is guaranteed that the back face of the substrate is not influenced by the gas in the reaction chamber, and the operation stability and repeatability are improved.

IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

The invention provides a hydride vapor phase epitaxy filter, a filter cleaning device and a cleaning method, the hydride vapor phase epitaxy filter comprises a shell and a pressure-resistant stopper, the shell is provided with a pressurizing port and a dust discharge port, and the pressure-resistant stopper is arranged in the dust discharge port. The hydride vapor phase epitaxy filter has a first state in which the pressure is maintained and a second state in which the pressure is instantaneously released, in the first state, there is a stable pressure difference between the interior of the housing and the collection structure, and the dust discharge port is instantaneously opened by the pressure-resistant stopper, and the dust discharge port is instantaneously opened by the pressure-resistant stopper. And the shell is in the second state, and dust in the shell enters the collecting structure. According to the invention, the dust cleaning efficiency, the operation safety, the process compatibility and the material quality guarantee can be comprehensively improved, and an efficient and stable tail gas treatment solution is provided for the gallium nitride epitaxial growth process.

This invention discloses a fluorine ion implantation process for high-voltage, low-leakage-current GaN Schottky diodes, relating to the field of semiconductor device fabrication technology. The specific steps of this process are: using a specific doping concentration of n... + -GaN bulk substrate, n-type substrate grown using hydride vapor phase epitaxy. ‑ - GaN drift layer; deposition of hard mask and self-aligned fluorine ion implantation to form a distribution region; removal of mask and deposition of polarization matching layer; electrode fabrication and annealing; finally, the fabricated diode is subjected to characteristic testing, and the process parameters of polarization matching layer and fluorine ion implantation are adjusted according to the results; this invention adopts a self-aligned implantation process to achieve simultaneous patterning of mesa isolation and fluorine ion implantation region, improving device withstand voltage and reducing leakage current; it also systematically optimizes the entire device fabrication process, improves bonding quality, reduces lattice defects, optimizes interface and contact effects, enhances fabrication repeatability and stability, simplifies the process, and improves efficiency.

Methods to produce and recycle substrates for III-nitride materials with electrochemical etching of highly doped n-type sacrificial layers and a fast hydride vapor phase epitaxy (HVPE) layer deposition to tackle the problems brought by wafer bowing and off-angle distribution in the substrate production process. These methods also showcase designs for sacrificial layers with specific fabrication structures, enabling high-quality substrate recycling, reducing the cost of buffer layer growth or mask layer fabrication, and resulting in a consistently smooth, epi-ready substrate surface that is suitable for direct regrowth without additional polishing steps, thereby enhancing efficiency and reducing processing costs.

This invention discloses a method for repairing locally defective gallium nitride (GaN) single crystal substrates, belonging to the field of GaN single crystal substrate fabrication. Utilizing the principle that the localized energy of the defective region relative to the normal region reduces the free energy required for etching, the defective region is directionally etched using chemical agents or a high-temperature atmosphere. It is then re-encapsulated in a hydride vapor phase epitaxy (HVPE) machine for 0-100 μm epitaxy, healing the etched area. After polishing, the defective area is repaired, resulting in a finished single crystal. This method requires only growing 0-100 μm of the repaired single crystal surface, significantly reducing costs and improving product yield compared to regrowing a 700 μm thick single crystal.

The application relates to a GaN thick film growth method for improving laser stripping efficiency. The method comprises the following steps: (1) adopting an oxalic acid solution to perform etching on a sapphire substrate with GaN seeds, and forming uniform nanometer-sized hollows; (2) introducing ammonia gas, and heating to a GaN thick film growth temperature under the protection of the ammonia gas; (3) growing a GaN thick film on the sapphire substrate with the GaN seeds through a metal organic chemical vapor deposition method or a hydride vapor phase epitaxy method, bonding the GaN thick film to a silicon wafer, stripping the substrate through laser, and obtaining the GaN thick film. The application forms nanometer-sized sponge branch-shaped hollows on the sapphire substrate with the GaN seeds through electrochemical etching, forms weak connection between lattices at the interface, effectively reduces laser threshold energy during laser stripping, significantly improves laser stripping efficiency by 50%, and meanwhile, the GaN thick film which is stripped off has good toughness, high quality and is not easy to be broken, and the qualified rate is significantly improved.

The invention belongs to the field of semiconductor crystal growth, and relates to a hydride vapor phase epitaxial growth method for improving the characteristics of semi-insulating gallium nitride through iron-carbon co-doping. According to the method, metal Ga and Fe dopants are placed in a container (boat) of a source region, nitrogen, hydrogen chloride gas, ammonia gas and methane are adopted, and the semi-insulating gallium nitride crystal grows and is obtained through flow and temperature regulation and control. Through Fe-C co-doping, the high quality of the gallium nitride crystal is maintained, and the semi-insulating gallium nitride with high resistivity and better stability is obtained. The longitudinal resistance distribution of the obtained semi-insulating silicon carbide crystal is uniform, and the longitudinal semi-insulating characteristic of semi-insulating gallium nitride can be improved, so that the more uniform and more stable semi-insulating gallium nitride crystal is realized.

Described herein are systems and methods which utilize solid, elemental germanium as a source for hydride vapor phase epitaxy (HVPE). These systems and methods may reduce costs by simplifying the growth process and reactor design and eliminate the need for expensive Ge gas precursors. Additionally, the described process may be useful as a way to recycle Ge, as Ge scarcity is a potential concern.

The invention belongs to the technical field of epitaxial growth of nitride crystals, and particularly relates to a method for growing nitride epitaxy and crystals based on hexagonal boron nitride quasi-single crystals. The preparation method comprises the following steps: preparing a hexagonal boron nitride pseudo-single crystal substrate with a crystal face (002) corresponding to the highest X-ray diffraction peak intensity, and growing a nitride epitaxial layer on the pretreated substrate by adopting metal organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, physical vapor transport or magnetron sputtering deposition. The reaction temperature in the growth process is regulated and controlled, so that the thickness of the nitride epitaxial film or the bulk single crystal is greater than 2 microns, and the nitride epitaxial film or the bulk single crystal does not generate through cracks in the whole epitaxial process. According to the method, the hexagonal boron nitride pseudo-single crystal which is soft in material and free of dangling bonds on the surface of the two-dimensional layer is directly adopted as the substrate, after nitride epitaxial crystals grow on the surface of the substrate, the interface does not have stress theoretically, and the nitride epitaxial thick film material which is complete and not prone to cracking is obtained.