205 results about "Growth parameter" patented technology

A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

The present invention provides new compositions containing colloidal nanocrystals with high photoluminescence quantum yields, new synthetic methods for the preparation of highly luminescent colloidal nanocrystals, as well as methods to control the photoluminescent properties of colloidal nanocrystals. The new synthetic methods disclosed herein allow photoemission brightness (quantum yield) to be correlated with certain adjustable nanocrystal growth parameters associated with a given synthetic scheme.

Compositions and methods are provided for the optimized expansion and implantation of mesenchymal stem cells into a patient in need thereof. Autologous mesenchymal stem cells (MSCs) to a patient in need of MSCs are harvested, expanded within novel growth parameters under the influence of autologous growth factors located on the patient's platelets.

The invention provides an agriculture management and control system based on augmented reality and relates to the technical field of intelligent agriculture, and is to solve the problem that existing agriculture management and control technology still has the problem of not high intelligence and automation degree as well as the problem that the existing agriculture management and control technology cannot realize interaction between users and virtual information in a real scene and the like. The system comprises an intelligent mobile terminal having an augmented reality providing system, a server, an agriculture information acquisition device and an environment adjusting device. The intelligent mobile terminal having the augmented reality providing system is in communication connection with the server through a wireless network; the server is communicated with the agriculture information acquisition device, and is used for receiving current environment parameters of environment parameter sensors, current plant images collected by each camera device and vegetation growth parameters obtained by a hyperspectral imaging spectrometer; and a plurality of camera devices track scenes of monitored crops in a current monitoring region in real time, and transmit the scenes to the intelligent mobile terminal having the augmented reality providing system to carry out augmented reality display of the crops.

Layer processing to grow a layer structure upon a substrate surface comprises supplying a vapor mixture stream to the substrate (28) to deposit constituents, monitoring growth with an ellipsometer (12) and using its output in real-time growth control of successive pseudo-layers. A Bayesian algorithm is used to predict a probability density function for pseudo-layer growth parameters from initial surface composition, growth conditions and associated growth probabilities therewith, the function comprising discrete samples. Weights are assigned to the samples representing occurrence likelihoods based on most recent sensor output. A subset of the samples is chosen with selection likelihood weighted in favor of samples with greater weights. The subset provides a subsequent predicted probability density function and associated pseudo-layer growth parameters for growth control, and becomes a predicted probability density function for a further iteration of pseudo-layer growth.

High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 10⁶ cm⁻².

A method of diagnosing the condition of a slurry pump impeller is provided, comprising collecting vibration data from at least one accelerometer mounted to or proximate the pump over a specific time period; calculating indicators from the collected vibration data, the indicators comprising energy level, crest factor, square root amplitude value, and fault growth parameter; and plotting the calculated indicators against time to generate a fault trend indicative of health or deterioration of the impeller. The method further involves predicting the remaining useful life of the impeller using vibration data-driven prognostics.

The invention belongs to the technical field of plant root system detection, and provides an automatic plant root system monitoring system. Under the premise of not injuring the original plants, the growing states of root systems can directly viewed through organic glass soil columns, a plant root system monitoring subsystem acquires the soil moisture, temperatures and plant evaporation capabilities of a variety of plant root systems and data and images as plant root system growth parameters in real time, dynamically and in all weathers, a plant root system and leaf analysis subsystem carries out analysis on the plant root system images and the leaf images, and investigates the relation between the growth of the leaves and the growth of the root systems, and the moisture, nutrient, temperature and microbial indexes of rhizosphere soil can be monitored and sampled by observing openable small windows on the organic glass soil columns, so that the determination and analysis of various physiological and biochemical indexes and a root-cutting experiment can be carried out. The automatic plant root system monitoring system reduces errors produced by a single large field experiment, provides powerful data sources for more in-depth researches, and has the advantages of little risk, easy maintenance, wide application range and high operability.

The invention relates to an improved region growing method which is applied to vessel segmentation and extraction in a coronary artery angiography image. The improved region growing method comprises the following steps of: preprocessing the image to obtain an original image capable of directly performing region growth; making a regulation and randomly generating a group of seed points; setting a stack data structure, enabling a newly grown pixel point to enter a stack, and taking out the point previously entering the stack to serve as a current point to be subjected to growth when the current point completes the growth; sequentially performing growth on each seed point, wherein a seed point gray value serves as an average value at a growing initial stage, and calculating a new average gray value when a new pixel point is grown every time along with the growth of the seed points; and completing the growth when no pixel point meeting growth standards exists and no seed point exists. The improved region growing method has the advantages that the seed points are automatically generated, no manual intervention is needed, the local average values around each pixel point serve as growth parameters in a growing process, the coronary artery angiography image with uneven brightness can be segmented, and the efficiency and the accuracy of the image segmentation are improved.

The invention discloses an agricultural Internet of Things information platform system comprising a client, a growth parameter collection module, an agricultural planting base controller, a third party transaction module and a server. The agricultural Internet of Things information platform system disclosed by the invention stores environmental data of crop planting in the server collectively, the server is accessed by a client, the growth conditions of agricultural products are inquired in real time, supply and requisitioning parties can release transaction information and accomplish online transaction through the third party transaction module, thereby being convenient and quick. Two-dimensional code labels output by an output device are adhered on each batch of delivered agricultural products, and the two-dimensional code labels record the information of the whole production process in the agricultural products for the convenience of tracing; each piece of demand information and to-be-sold agricultural product information are audited before being released, thereby improving the security of transaction; and when the demand information and to-be-sold agricultural product information are released, the automatic calculation of the supply and demand matching degree is realized, thereby accomplishing automatic recommendation and greatly improving the success rate of the transaction.

The invention provides a crystalline silicon preparation method.The crystalline silicon preparation method includes that polycrystalline silicon and a dopant are added into a crucible of a crystalline silicon ingot furnace or a single crystal furnace; in presence of protective gas, the polycrystalline silicon and the dopant are heated to melt completely to form silicon melts, crystalline silicon growth parameters are adjusted to enable the silicon melts to start to grow crystals, and in a crystal growing process, when resistivity of the crystals reaches clinical resistivity, new silicon melts formed by the polycrystalline silicon are replenished into residual silicon melts in the crucible to enable the resistivity of the crystals to be adjusted to target resistivity, and the new silicon melts continue growing crystals so as to obtain crystalline silicon with target yield after crystallization of the silicon melts in the crucible is completed.The crystalline silicon preparation method is capable of solving the problems of too many low-resistivity regions, scattered resistivity distribution and low crystalline silicon yield in the prior art.The invention further provides the crystalline silicon.

The invention relates to the field of semiconductor material preparation, and discloses a method for preparing a gallium oxide epitaxial film and the gallium oxide epitaxial film. Trimethyl gallium or triethyl gallium is used as a gallium source, gas state oxygen-containing substances are used as an oxygen source, a hydrogenous compound is used as auxiliary reaction gas, and then the gallium oxide epitaxial film is prepared. According to the method for preparing the gallium oxide epitaxial film and the gallium oxide epitaxial film, an MOCVD system is used, and the gallium oxide epitaxial film is prepared by adjusting growth parameters, adding auxiliary reactants and optimizing a subsequent processing method. By the adoption of the method, an organic source can be fully reacted, reaction products can be completely separated, and pollution on the surface of the gallium oxide film caused by secondary deposition of carbon and the relevant compounds of carbon is avoided. The gallium oxide epitaxial film prepared from the method is good in performance and meets the requirement for industrialization mass production in the future.

A method to produce high density microalgae having high lipid concentration in mass culture including the steps of inoculating a vessel with microalgae at mid-log phase to a depth greater than 25 cm. Then culturing the microalgae to a preselected target density threshold, bringing the microalgae to stationary phase, manipulating growth parameters to maximize lipid concentration and harvesting the vessel.

The present invention provides a vessel extraction method, device and system. The method comprises the following steps: obtaining an image comprising vessel information; determining an interest area in the image; performing statistics of the gray value of the interest area; according to the gray value, setting a growth parameter; based on Fast Marching, growing main portion vessels; regulating the growth parameter, and tracking vessel branches; and based on the main vessels and the vessel branches, extracting a vessel area. The vessel extraction method can rapidly and completely extract the main vessels and the vessel branches.

The invention belongs to the technical field of plant modeling and computer graphics processing, in particular to a process-type plant model reconstruction method based on multi-view images, aiming atsolving the problems of large error and low precision between the plant model constructed by the prior method and the real data. The method comprises the following steps: acquiring the plant multi-view picture information; performing dense depth estimation based on color and geometric consistency; acquiring 3D point cloud data based on multi-view depth information fusion; a three-dimensional treebranch structure model of the plant is constructed by using a pre-constructed branch structure growth parameter representation model and the three-dimensional point cloud data to restrict plant growth. The invention provides a solution for reconstructing a complete tree model from a multi-view image. The obtained point clouds and models have a high degree of consistency with the original image, which skillfully combines plant process modeling and data-driven plant reconstruction method, not only to ensure the accuracy of the model, but also to maintain the biological significance of plants.

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

The invention provides a method and a system for extracting leaf growth parameters of fruit trees based on clustering segmentation, the method comprising the following steps: superclustering the pointcloud data of the canopy branches and leaves of a target fruit tree, and performing LCCP clustering on a plurality of adjacent voxel blocks in the obtained voxel block set to obtain a first clustering set; applying Kmeans clustering to any point group in the first clustering set to obtain the second clustering set; according to the point cloud data corresponding to each point group in the secondclustering set, obtaining the growth parameters of each leaf based on boundary extraction. After LCCP clustering is used to segment the point group obtained by superbody clustering, and the Kmeans clustering algorithm based on dynamic K-value is further adopted. The improved clustering Kmeans algorithm can automatically obtain the K value, the shortcoming of manual setting the K value in the traditional algorithm is overcome, the point cloud data segmentation of the canopy branches and leaves of the target fruit trees becomes more complete and more thorough, and then extracted leaf growth parameters are more accurately.

The invention discloses a plant growing regulating method and device. The method includes acquiring a growing parameter threshold of a plant, detecting the growing parameter of the plant to acquire a detection result, comparing the detection result with the growing parameter threshold to obtain a comparison result, and regulating grow parameters of the plants according to the comparison result.

The invention provides a real-time measuring system for growth parameters of a KDP type crystal and a measuring method thereof. The real-time measuring system comprises a crystal growth tank and a crystal holder located inside the crystal growth tank. The crystal holder is connected to a rotating electric machine located outside the crystal growth tank through a crystal holder connecting rod. Theside wall of the crystal growth tank is provided with an observation window, an encoder is mounted on the crystal holder connecting rod, a camera is mounted on the outside of the observation window, the camera is fixed by a camera bracket, and the encoder and the camera are communicatively connected with a computer. The real-time measuring system for growth parameters of the KDP type crystal and the measuring method thereof can accurately obtain the crystal size, growth speed and the degree of supersaturation in real time, which is beneficial for researchers to grasp the growth law of KDP typecrystals, optimize the growth process of KDP type crystals, and improve the quality of the crystal, thereby helping the smooth completion of the ICF device.

The draw-up growth method for Yb-doped and Cr4+-doped YAG (YAG:Yb, Cr4+) laser crystal comprises: preparing material, doping, heating, selecting growth parameters and atmosphere, controlling solid-liquid interface shape, and annealing. This invention uses two doped systems with Yb+Mg+Cr and Yb+Ca+Mg+Cr to convert the Cr3+ into Cr4+ fully, and has dual-function of generating 1.03ª–m laser from Yb3+ and passive regulating Q by Cr4+.