206 results about "Growth parameter" patented technology

A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and / or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

The present invention provides new compositions containing colloidal nanocrystals with high photoluminescence quantum yields, new synthetic methods for the preparation of highly luminescent colloidal nanocrystals, as well as methods to control the photoluminescent properties of colloidal nanocrystals. The new synthetic methods disclosed herein allow photoemission brightness (quantum yield) to be correlated with certain adjustable nanocrystal growth parameters associated with a given synthetic scheme.

A method of printing includes, on an ongoing basis, determining a print defect state of a printing system, selecting a screen which has a halftone print parameter which masks a detected print defect, such as one or more of a screen frequency parameter, a screen angle parameter, and a dot growth parameter. The method further includes printing images according to the selected halftone print parameter. Alternatively, where the printing system includes more than one marking engine, the method includes selecting a marking engine according to the determined defect states of each of the marking engines.

The invention provides an agriculture management and control system based on augmented reality and relates to the technical field of intelligent agriculture, and is to solve the problem that existing agriculture management and control technology still has the problem of not high intelligence and automation degree as well as the problem that the existing agriculture management and control technology cannot realize interaction between users and virtual information in a real scene and the like. The system comprises an intelligent mobile terminal having an augmented reality providing system, a server, an agriculture information acquisition device and an environment adjusting device. The intelligent mobile terminal having the augmented reality providing system is in communication connection with the server through a wireless network; the server is communicated with the agriculture information acquisition device, and is used for receiving current environment parameters of environment parameter sensors, current plant images collected by each camera device and vegetation growth parameters obtained by a hyperspectral imaging spectrometer; and a plurality of camera devices track scenes of monitored crops in a current monitoring region in real time, and transmit the scenes to the intelligent mobile terminal having the augmented reality providing system to carry out augmented reality display of the crops.

The invention relates to a quantum point active area structure of wide spectral white light LED and its growing method, based semiconductor power-typed light emitting diode of gallium nitride III / V group compounds, metal organic chemistry gas sediment growing method and relative active area structure design of white light power-typed spectral light emitting diode LED material with use solid state light source whose active area contains indium-gallium-nitrogen- gallium-nitrogen or quantum point of indium-gallium-nitrogen- gallium-nitrogen structure. It supplies several kinds of new machinery structure design based on InGaN quantum point active area, and core growth parameter of condition for extension such as flux of reaction source, V / III ratio and temperature of substrate. The invention can realize transformation without fluorescence, high color-rendering index and luminance requirement of highly luminous GaN white light LED, also, it is suitable for(CdSe) ZnS / ZnSe, (Zn, Cd)Se / ZnSe, (Zn, Cd, Hg)(Se,Te) / ZnSe, (Zn,Cd,Hg)(Se,Te) / ZnS and other II / VI group compounds semiconductor containing quantum point of spectral power-typed light emitting diode material growing, whose main light emitting diode is them same with that of III / V InGaN group quantum point 21 .

Layer processing to grow a layer structure upon a substrate surface comprises supplying a vapor mixture stream to the substrate (28) to deposit constituents, monitoring growth with an ellipsometer (12) and using its output in real-time growth control of successive pseudo-layers. A Bayesian algorithm is used to predict a probability density function for pseudo-layer growth parameters from initial surface composition, growth conditions and associated growth probabilities therewith, the function comprising discrete samples. Weights are assigned to the samples representing occurrence likelihoods based on most recent sensor output. A subset of the samples is chosen with selection likelihood weighted in favor of samples with greater weights. The subset provides a subsequent predicted probability density function and associated pseudo-layer growth parameters for growth control, and becomes a predicted probability density function for a further iteration of pseudo-layer growth.

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and / or control stresses present after the semiconductor structure has cooled.

The invention provides a method for preparing a hexagonal boron nitride film. The method comprises the following steps of firstly preparing a copper-nickel alloy foil as a substrate; placing the substrate into a chemical vapor deposition cavity with the pressure intensity of 20-5000 Pa to preserve the temperature of the substrate between 950 DEG C and 1090 DEG C; introducing a source substance with the temperature of 50-100 DEG C, and introducing a protective gas to grow for 10 minutes-3 hours so as to prepare the hexagonal boron nitride film on the surface of the copper-nickel alloy foil substrate. The method provided by the invention can be used for preparing hexagonal boron nitride crystal domains with different sizes and continuous films with different thicknesses on the copper-nickel alloy foil substrate by controlling growth parameters. The prepared hexagonal boron nitride crystal domains can achieve the maximal side length of hundreds of micrometers, have the advantages of good crystallinity, simple preparation condition, low cost, wide window of a condition parameter required by growth and good repeatability and lays the foundation for the wide application of the hexagonal boron nitride film in the fields of a graphene device and the like.

High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 106 cm−2.

A method of diagnosing the condition of a slurry pump impeller is provided, comprising collecting vibration data from at least one accelerometer mounted to or proximate the pump over a specific time period; calculating indicators from the collected vibration data, the indicators comprising energy level, crest factor, square root amplitude value, and fault growth parameter; and plotting the calculated indicators against time to generate a fault trend indicative of health or deterioration of the impeller. The method further involves predicting the remaining useful life of the impeller using vibration data-driven prognostics.

In some embodiments, the present disclosure pertains to methods of controllably forming Bernal-stacked graphene layers. In some embodiments, the methods comprise: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and (4) growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed Bernal-stacked graphene layers is controllable as a function of one or more growth parameters. Further embodiments of the present disclosure also include steps of: (5) terminating the growing step; and (6) transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Further embodiments of the present disclosure pertain to graphene films formed by the methods of the present disclosure.

The invention belongs to the technical field of plant root system detection, and provides an automatic plant root system monitoring system. Under the premise of not injuring the original plants, the growing states of root systems can directly viewed through organic glass soil columns, a plant root system monitoring subsystem acquires the soil moisture, temperatures and plant evaporation capabilities of a variety of plant root systems and data and images as plant root system growth parameters in real time, dynamically and in all weathers, a plant root system and leaf analysis subsystem carries out analysis on the plant root system images and the leaf images, and investigates the relation between the growth of the leaves and the growth of the root systems, and the moisture, nutrient, temperature and microbial indexes of rhizosphere soil can be monitored and sampled by observing openable small windows on the organic glass soil columns, so that the determination and analysis of various physiological and biochemical indexes and a root-cutting experiment can be carried out. The automatic plant root system monitoring system reduces errors produced by a single large field experiment, provides powerful data sources for more in-depth researches, and has the advantages of little risk, easy maintenance, wide application range and high operability.

The invention relates to an improved region growing method which is applied to vessel segmentation and extraction in a coronary artery angiography image. The improved region growing method comprises the following steps of: preprocessing the image to obtain an original image capable of directly performing region growth; making a regulation and randomly generating a group of seed points; setting a stack data structure, enabling a newly grown pixel point to enter a stack, and taking out the point previously entering the stack to serve as a current point to be subjected to growth when the current point completes the growth; sequentially performing growth on each seed point, wherein a seed point gray value serves as an average value at a growing initial stage, and calculating a new average gray value when a new pixel point is grown every time along with the growth of the seed points; and completing the growth when no pixel point meeting growth standards exists and no seed point exists. The improved region growing method has the advantages that the seed points are automatically generated, no manual intervention is needed, the local average values around each pixel point serve as growth parameters in a growing process, the coronary artery angiography image with uneven brightness can be segmented, and the efficiency and the accuracy of the image segmentation are improved.

The invention discloses an agricultural Internet of Things information platform system comprising a client, a growth parameter collection module, an agricultural planting base controller, a third party transaction module and a server. The agricultural Internet of Things information platform system disclosed by the invention stores environmental data of crop planting in the server collectively, the server is accessed by a client, the growth conditions of agricultural products are inquired in real time, supply and requisitioning parties can release transaction information and accomplish online transaction through the third party transaction module, thereby being convenient and quick. Two-dimensional code labels output by an output device are adhered on each batch of delivered agricultural products, and the two-dimensional code labels record the information of the whole production process in the agricultural products for the convenience of tracing; each piece of demand information and to-be-sold agricultural product information are audited before being released, thereby improving the security of transaction; and when the demand information and to-be-sold agricultural product information are released, the automatic calculation of the supply and demand matching degree is realized, thereby accomplishing automatic recommendation and greatly improving the success rate of the transaction.

The invention relates to a method for monitoring and controlling growth parameters of facility crops based on a wireless sensor executing network. The method is characterized by comprising three states, namely a clustering formation stage, an intra-cluster update stage and a cluster head re-election stage. According to the method, a wireless sensor and actor network (WSAN) technology is applied to the facility crops, a cooperate routing protocol-a dynamic clustering-based angle forwarding routing protocol suitable for the WSAN is provided, and a real-time task distribution algorithm RTAA-SFPA based on sealing first price auction is also provided. By the method, automation, networking and intelligentization of facility crop application can be realized, and real-time performance, reliability and low energy consumption of facility crop management can be realized.

The invention provides a crystalline silicon preparation method.The crystalline silicon preparation method includes that polycrystalline silicon and a dopant are added into a crucible of a crystalline silicon ingot furnace or a single crystal furnace; in presence of protective gas, the polycrystalline silicon and the dopant are heated to melt completely to form silicon melts, crystalline silicon growth parameters are adjusted to enable the silicon melts to start to grow crystals, and in a crystal growing process, when resistivity of the crystals reaches clinical resistivity, new silicon melts formed by the polycrystalline silicon are replenished into residual silicon melts in the crucible to enable the resistivity of the crystals to be adjusted to target resistivity, and the new silicon melts continue growing crystals so as to obtain crystalline silicon with target yield after crystallization of the silicon melts in the crucible is completed.The crystalline silicon preparation method is capable of solving the problems of too many low-resistivity regions, scattered resistivity distribution and low crystalline silicon yield in the prior art.The invention further provides the crystalline silicon.

The invention relates to the field of semiconductor material preparation, and discloses a method for preparing a gallium oxide epitaxial film and the gallium oxide epitaxial film. Trimethyl gallium or triethyl gallium is used as a gallium source, gas state oxygen-containing substances are used as an oxygen source, a hydrogenous compound is used as auxiliary reaction gas, and then the gallium oxide epitaxial film is prepared. According to the method for preparing the gallium oxide epitaxial film and the gallium oxide epitaxial film, an MOCVD system is used, and the gallium oxide epitaxial film is prepared by adjusting growth parameters, adding auxiliary reactants and optimizing a subsequent processing method. By the adoption of the method, an organic source can be fully reacted, reaction products can be completely separated, and pollution on the surface of the gallium oxide film caused by secondary deposition of carbon and the relevant compounds of carbon is avoided. The gallium oxide epitaxial film prepared from the method is good in performance and meets the requirement for industrialization mass production in the future.

A method to produce high density microalgae having high lipid concentration in mass culture including the steps of inoculating a vessel with microalgae at mid-log phase to a depth greater than 25 cm. Then culturing the microalgae to a preselected target density threshold, bringing the microalgae to stationary phase, manipulating growth parameters to maximize lipid concentration and harvesting the vessel.

The invention discloses a monitoring system and method for key parameters of pig growth based on NB-IoT. The monitoring system includes a field device side, a remote server and a mobile client. The field device side comprises an information identification module, a PLC, a parameter acquisition module, a feeding drive module and a feeding device, which can realize automatic feeding and automatic acquisition of pig weight, body temperature, feed intake, feeding frequency and field temperature and humidity information. The collected data are uploaded to the NB-IoT connection management platform through NB-IoT, and the data are parsed and pushed to the remote server by the platform. The remote server processes the data collected in the field and determines whether an exception has occurred. The mobile client comprises a login module, a monitoring node management module, an early warning module, an information monitoring module, and a historical curve analysis module. The monitoring systemand method for key parameters of pig growth based on NB-IoT can effectively obtain the growth parameters of the pigs, and monitor the body temperature and the feeding information which have a great relationship with the health of the pigs throughout the day, and the breeders can timely find the pigs with abnormal health and obtain the early warning information through the mobile phone.

The invention discloses an intelligentized organic agricultural product production system based on micro culture boxes and a cloud platform. The system comprises a micro culture box production cluster, a nutrient solution supply system, a sensor module, a controller module, a network interface module, an access gateway and the cloud platform. The sensor module is used for acquiring data of environmental parameters and organic agricultural product growth parameter. The controller module is used for analyzing data information acquired by the sensor module, monitoring the growth situation of crops and formulating an optimal culture scheme through a built-in specialist controller and guiding relevant executors to perform adjustment. The network interface module is used for achieving wireless transmitting and receiving of the data of the micro culture boxes. The access gateway is used for accessing to Internet and the cloud platform. The cloud platform is used for issuing crop information and supporting relevant functions of e-commerce. The system utilizes an Internet of Things technology to combine with the cloud platform through the intelligent micro culture boxes, achieves real-time monitoring and accurate control of agricultural indexes, is far higher than traditional agriculture and meanwhile meets the demand for online transaction and trace to the source of organic products in future.

The present invention provides a vessel extraction method, device and system. The method comprises the following steps: obtaining an image comprising vessel information; determining an interest area in the image; performing statistics of the gray value of the interest area; according to the gray value, setting a growth parameter; based on Fast Marching, growing main portion vessels; regulating the growth parameter, and tracking vessel branches; and based on the main vessels and the vessel branches, extracting a vessel area. The vessel extraction method can rapidly and completely extract the main vessels and the vessel branches.

The invention belongs to the technical field of plant modeling and computer graphics processing, in particular to a process-type plant model reconstruction method based on multi-view images, aiming atsolving the problems of large error and low precision between the plant model constructed by the prior method and the real data. The method comprises the following steps: acquiring the plant multi-view picture information; performing dense depth estimation based on color and geometric consistency; acquiring 3D point cloud data based on multi-view depth information fusion; a three-dimensional treebranch structure model of the plant is constructed by using a pre-constructed branch structure growth parameter representation model and the three-dimensional point cloud data to restrict plant growth. The invention provides a solution for reconstructing a complete tree model from a multi-view image. The obtained point clouds and models have a high degree of consistency with the original image, which skillfully combines plant process modeling and data-driven plant reconstruction method, not only to ensure the accuracy of the model, but also to maintain the biological significance of plants.

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and / or control stresses present after the semiconductor structure has cooled.

The invention provides a method and a system for extracting leaf growth parameters of fruit trees based on clustering segmentation, the method comprising the following steps: superclustering the pointcloud data of the canopy branches and leaves of a target fruit tree, and performing LCCP clustering on a plurality of adjacent voxel blocks in the obtained voxel block set to obtain a first clustering set; applying Kmeans clustering to any point group in the first clustering set to obtain the second clustering set; according to the point cloud data corresponding to each point group in the secondclustering set, obtaining the growth parameters of each leaf based on boundary extraction. After LCCP clustering is used to segment the point group obtained by superbody clustering, and the Kmeans clustering algorithm based on dynamic K-value is further adopted. The improved clustering Kmeans algorithm can automatically obtain the K value, the shortcoming of manual setting the K value in the traditional algorithm is overcome, the point cloud data segmentation of the canopy branches and leaves of the target fruit trees becomes more complete and more thorough, and then extracted leaf growth parameters are more accurately.

The invention relates to a crop growth analysis method and a crop growth analysis system based on an unmanned aerial vehicle (UAV) platform. The method comprises the following steps: collecting image data of crops in different periods through a UAV; extracting the spectral information of each pixel in a planting area; building an inversion relationship between the spectral information and key growth parameters; and calculating the ridge number, plant height, leaf color, lodging rate and vegetation coverage of crops in the planting area. The ridge number of crops is calculated through line extraction based on Hough transform. The calculation of plant height of maize based on a DSM model is researched. Maize canopy color distinguishing based on maximum likelihood supervised classification is researched. The calculation of lodging rate of maize based on texture analysis is researched. The calculation of vegetation coverage of an image based on a pixel method is researched. The ridge number, plant height, leaf color, lodging rate, vegetation coverage and other information of crops in the process of growth can be extracted quickly and accurately, and comprehensive monitoring and unified management of the planting area are facilitated.

The invention discloses a plant growing regulating method and device. The method includes acquiring a growing parameter threshold of a plant, detecting the growing parameter of the plant to acquire a detection result, comparing the detection result with the growing parameter threshold to obtain a comparison result, and regulating grow parameters of the plants according to the comparison result.

The draw-up growth method for Yb-doped and Cr4+-doped YAG (YAG:Yb, Cr4+) laser crystal comprises: preparing material, doping, heating, selecting growth parameters and atmosphere, controlling solid-liquid interface shape, and annealing. This invention uses two doped systems with Yb+Mg+Cr and Yb+Ca+Mg+Cr to convert the Cr3+ into Cr4+ fully, and has dual-function of generating 1.03ª–m laser from Yb3+ and passive regulating Q by Cr4+.

The focus of this invention is to provide an efficient growth analytical system for companies. The inventive system taught here describes a ranking system that ranks companies based on a combination of factors including non-obvious parameters corresponding to the type of company whose growth is being analyzed. The ranking is based on weightages associated with different data points, the data points being indicative of growth parameters. Companies are ranked and re-ranked based on appropriate data point and / or time period selection by a user. The users are provided “user handles” to tweak ranking per their desired criteria. Such a system would help investors and key players to make better business decisions when analyzing smaller non-listed companies.