Real-time measuring system for growth parameters of KDP type crystal and measuring method thereof

A technology for crystal growth and growth parameters, which is applied in the direction of radio wave measurement system, measurement device, and device for measuring the time required to move a certain distance, which can solve the problem of inability to accurately obtain the crystal size, growth rate and solution supersaturation , the accuracy cannot be guaranteed, and it affects the optimization of the KDP crystal growth process and the improvement of the crystal quality, etc.

Active Publication Date: 2018-10-19
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology allows scientists to measure how well they grow certain types of materials quickly with high accuracy by measuring their properties at different points during production or processing stages. It also helps them better control over these processes further improving productivity while maintaining consistently good results across various manufacturings.

Problems solved by technology

This technical problem addressed in this patents relates to improving the efficiency at producing these types of materials for use in electronic equipment like IC cards or optical communication systems (OCS). Current methods involve manual inspections that take longer than necessary due to factors like temperature fluctuations caused by changes overtime. Additionally, current techniques have limitations in predicting crystal sizes and growing rates based solely upon observers' observations without considering how much they can change their position within each unit cell.

Method used

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  • Real-time measuring system for growth parameters of KDP type crystal and measuring method thereof
  • Real-time measuring system for growth parameters of KDP type crystal and measuring method thereof

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Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1: The measurement method of the real-time size of KDP class crystal growth

[0031] Utilize the real-time measurement system of described KDP class crystal growth parameter to the measuring method of the real-time size of KDP class crystal growth, comprise the steps:

[0032] 1) Before the growth of KDP-like crystal 2, make a calibration plate 12 with a series of standard rings 11 arranged vertically and horizontally, in height, such as figure 2 As shown, the spacing and size of the standard ring 11 are known;

[0033] 2) Fill the crystal growth tank 3 with pure water for configuring the growth solution, place the calibration plate 12 in the center of the crystal carrier 1, turn on the rotating motor 6, and install the encoder on the crystal carrier connecting rod 4 5 Real-time identification of the rotation angle of the connecting rod 4 of the crystal carrier, that is, the encoder 5 recognizes the orientation of the calibration plate 12 on the crystal car...

Embodiment 2

[0041] Embodiment 2: The real-time growth rate measuring method of KDP class crystal growth

[0042] Utilize the real-time measurement system of described KDP class crystal growth parameter to the real-time growth rate measuring method of KDP class crystal growth, comprise the steps:

[0043] 1) Before the growth of KDP-like crystal 2, make a calibration plate 12 with a series of standard rings 11 arranged vertically and horizontally, in height, such as figure 2 As shown, the spacing and size of the standard ring 11 are known;

[0044] 2) Fill the crystal growth tank 3 with pure water for configuring the growth solution, place the calibration plate 12 in the center of the crystal carrier 1, turn on the rotating motor 6, and install the encoder on the crystal carrier connecting rod 4 5 Real-time identification of the rotation angle of the connecting rod 4 of the crystal carrier, that is, the encoder 5 recognizes the orientation of the calibration plate 12 on the crystal carri...

Embodiment 3

[0052] Embodiment 3: The real-time supersaturation measuring method of KDP class crystal growth

[0053] Utilize the real-time measurement system of described KDP class crystal growth parameter to the real-time supersaturation measuring method of KDP class crystal growth, comprise the steps:

[0054] 1) Before the growth of KDP-like crystal 2, make a calibration plate 12 with a series of standard rings 11 arranged vertically and horizontally, in height, such as figure 2 As shown, the spacing and size of the standard ring 11 are known;

[0055] 2) The crystal growth tank 3 is filled with pure water for configuring the growth solution, the calibration plate 12 is placed in the center of the crystal carrier 1, the rotating motor 6 is turned on, and the encoder installed on the crystal carrier connecting rod 4 5 Real-time identification of the rotation angle of the connecting rod 4 of the crystal carrier, that is, the encoder 5 recognizes the orientation of the calibration plate...

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Abstract

The invention provides a real-time measuring system for growth parameters of a KDP type crystal and a measuring method thereof. The real-time measuring system comprises a crystal growth tank and a crystal holder located inside the crystal growth tank. The crystal holder is connected to a rotating electric machine located outside the crystal growth tank through a crystal holder connecting rod. Theside wall of the crystal growth tank is provided with an observation window, an encoder is mounted on the crystal holder connecting rod, a camera is mounted on the outside of the observation window, the camera is fixed by a camera bracket, and the encoder and the camera are communicatively connected with a computer. The real-time measuring system for growth parameters of the KDP type crystal and the measuring method thereof can accurately obtain the crystal size, growth speed and the degree of supersaturation in real time, which is beneficial for researchers to grasp the growth law of KDP typecrystals, optimize the growth process of KDP type crystals, and improve the quality of the crystal, thereby helping the smooth completion of the ICF device.

Description

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Claims

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Application Information

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Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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