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Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal

A technology of yttrium aluminum garnet and laser crystal, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of unsatisfactory self-Q tuning effect of laser crystal, and achieves favorable charge balance, outstanding effect and distribution. uniform effect

Inactive Publication Date: 2006-07-19
SOUTH WEST INST OF TECHN PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main solution is to use Yb and calcium (Ca 2+ ) ions and Cr co-doped laser crystal self-Q-switching effect is not ideal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] According to the following chemical formula formula:

[0032] (1)

[0033] in,

[0034] x=0.05,

[0035] y=0.003,

[0036] z = 0.02.

[0037] The total weight of raw materials is 750 grams, and the prepared raw materials are placed in an agate bowl and mixed for 1 hour. Then put it into a special latex bag (three layers in total), tie the open end of the bag tightly, and place it in a hydraulic machine with a pressure of 1500kg / cm 2 Pressure compression molding. The pressed block is placed in an iridium crucible, the size of which is φ70×70mm, and the wall thickness is 2.4mm. After installing the furnace and closing the furnace door, first vacuum up to 10 -4 After mmHg, start the intermediate frequency power supply. When the vacuum degree and heating power reach a certain level, fill with Ar gas. Slowly heat until the raw material is completely melted, then gradually lower the seed crystal. The seed orientation is ±5°. After the seed crys...

Embodiment 2

[0041] The preparation of raw materials, doping formula, growth device and growth process control are the same as in Example 1. The difference is that the direction of the seed crystal is ; the rotational speed of the crystal is 82r / min and the pulling speed is 1.0mm / h after the crystal grows into a constant diameter. The isodiametric part of the crystal has no core, and the crystal is brown with a little blue.

Embodiment 3

[0043] Present embodiment is batched by following chemical equation:

[0044] (2)

[0045] In the formula,

[0046] w=0.05,

[0047] x=0.010,

[0048] y=0.005,

[0049] z = 0.015.

[0050] Raw material preparation, growth device, and growth process control are the same as in Example 1, except that the crystal pulling speed is slightly slower at 1.2mm / h; the seed crystal direction is . The crystals are brown with blue.

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PUM

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Abstract

The draw-up growth method for Yb-doped and Cr4+-doped YAG (YAG:Yb, Cr4+) laser crystal comprises: preparing material, doping, heating, selecting growth parameters and atmosphere, controlling solid-liquid interface shape, and annealing. This invention uses two doped systems with Yb+Mg+Cr and Yb+Ca+Mg+Cr to convert the Cr3+ into Cr4+ fully, and has dual-function of generating 1.03ª–m laser from Yb3+ and passive regulating Q by Cr4+.

Description

technical field [0001] The present invention relates to yttrium aluminum garnet (YAG: Yb, Cr) doped with ytterbium and tetravalent chromium 4+ ) Laser growth technology for new crystals. Background technique [0002] YAG:Yb single crystal is a crystal with excellent performance, which has been paid more and more attention and will be widely used in laser diode (LD) pumped solid-state laser (LDPSSL). Its laser wavelength is 1.03μm, and its main absorption peaks are 937nm and 968nm. Ytterbium-doped yttrium aluminum garnet (YAG:Yb) crystals have been found to be much more laser efficient than YAG:Nd. For the pulse working state, some applications require Q-switching to narrow the pulse. There are two ways of active Q-switching and passive Q-switching. The former generally uses electro-optic Q switches, while the latter uses saturable absorbers (such as YAG crystals and dyes doped with tetravalent chromium ions). Previously, separate components were ...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B15/00
Inventor 徐天华赵世平张志斌杨永强彭维清罗蜀平
Owner SOUTH WEST INST OF TECHN PHYSICS
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