970results about How to "Reduced characteristics" patented technology

In a standard cell, dummy transistors have p-type and n-type dummy gate electrodes. The dummy transistors are in an OFF state all the time. The gate length of each of the dummy gate electrodes is extended over an end portion of a diffusion region toward the inside of the standard cell. Thus, the total surface area and the total perimeter of respective gate electrodes of all transistors provided in the standard cell are increased. As a result, for example, even though shapes of gate electrodes of transistors vary between the standard cell and each of other standard cells, transistor characteristics are substantially equal among the standard cells. Therefore, variations in delays of signals generated between the standard cells can be suppressed.

A protection circuit is provided for protecting a secondary battery from overcharging and excessive discharge current by a simple circuit. The protection circuit is provided with a connection terminal (T3) for connecting the secondary battery (6); a connection terminal (T1) for connecting a charging device for charging the secondary battery (6) and/or a load device driven by a discharge current from the secondary battery (6); a bimetal switch (SW1) that is provided between the connection terminals (T1, T3) and turned off in the case of exceeding a specified temperature set beforehand; a heater (R2) for heating the bimetal switch (SW1); and an integrated circuit (IC1) for turning the bimetal switch (SW1) off by causing the heater (R2) to generate heat if a voltage applied to the connection terminal (T3) by the secondary battery (6) exceeds a preset reference voltage.

According to the invention it is disclosed an absorbent pad (1) comprising a liquid-impervious back sheet (2), a plurality of bodies (3) of liquid-absorbent material disposed on one surface of the back sheet (2), and a liquid-pervious cover sheet (4) covering said bodies (3) of absorbent material and secured to the back sheet (2) along channels (7) which separate said bodies (3) of absorbent material. The channels (7) progresses in a channel-pattern in which three channels (7), meeting in a joint, form respective edges (6) of said whole bodies (3) and said channels (7) being substantially free from absorbent material. A method for the manufacturing of such absorbent pad (1) is also disclosed.

There is disclosed a reinforced structural assembly and a method of using the assembly for reinforcing components of an automotive vehicle. The assembly generally includes a first member and a second member with a reinforcement material intermediate the first and second member. According to the method, the assembly is placed in a cavity of an automotive vehicle and the reinforcement material is expanded to promote connection between the first member and a surface defining the cavity and to promote connection between the second member and another surface defining the cavity.

An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and a second semiconductor layer including an i-type second oxide semiconductor is provided in contact with the other surface. The energy difference between a vacuum level and a Fermi level in the second oxide semiconductor is larger than that in the first oxide semiconductor. In the first semiconductor layer, a region in the vicinity of the junction surface with the second oxide semiconductor which satisfies the above condition is a region having an extremely low carrier concentration (a quasi-i-type region). By using the region as a channel, the off-state current can be reduced. Further, a drain current of the FET flows through the first oxide semiconductor having a high mobility; accordingly, a large amount of current can be extracted.

A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.

A nonaqueous electrolytic solution effective in improving cycle characteristics and used for a nonaqueous electrolyte secondary battery including a positive electrode having a positive-electrode active material capable of storing and releasing metal ions and a negative electrode having a negative-electrode active material containing at least one atom selected from the group consisting of Si, Sn, and Pb includes an electrolyte, a nonaqueous solvent, and an isocyanate compound having at least one aromatic ring in its molecule.

A method for calculating power flow solution of a power transmission network with unified power flow controllers is adapted to calculate the power flow on a large-scale power transmission network. The unified power flow controller has a series transformer, a series converter, a direct current coupling capacitor, a shunt converter, and a series transformer. The shunt transformer is connected electrically to a sending-end bus. The series transformer is connected electrically to the sending-end bus and a receiving-end bus. The unified power flow controller is represented by equivalent active and reactive loads on the sending-end and receiving-end buses of the power transmission network.

The invention belongs to the technical field of preparing the surface of a composite structure, and in particular relates to a method for preparing super-hydrophobic antireflective silicon surface with a micron and nanometer composite structure. The method comprises the following steps: cleaning a silicon chip; preparing a micron-level silicon island and a gridding structure on the surface of the silicon chip; carrying out catalytic etching taking silver or aurum nanoparticles as blockage; obtaining the surface of the micron and nanometer composite structure; and carrying out chemical modification of the surface of the composite structure. A static contact angle between the super-hydrophobic antireflective material surface prepared by the method and water is more than 150 degrees, and a static rolling angle of water is less than 3 degrees. The surface has superior antireflective performance, and in particular, the light reflectivity within the wavelength range between 800 and 1,100 nm is less than 3 percent. With application of the method, the super-hydrophobic antireflective silicon surface of the micron and nanometer composite structure can be produced on scale, can be widely applied to a solar cell, a microfluidic chip, a photoelectric device, and the like, and has good industrial application prospect.

A battery pack includes: a battery having a main surface; and a resin layer capable of being integrated with an armor member armoring the battery so that at least a part of the main surface of the battery is exposed and covering the main surface of the battery, wherein the resin layer is formed by curing a reaction curable resin having a viscosity of not less than 80 mPa·second to less than 1000 mPa·second and a thickness of the resin layer on the main surface of the battery ranges from 0.05 mm to smaller than 0.4 mm.

The method of charging a lithium ion secondary battery uses a lithium ion secondary battery comprising a positive electrode including a mixed metal oxide containing at least Li, Mn, and Ni as metal components as a positive electrode active material, a negative electrode, and a nonaqueous electrolytic solution containing a lithium salt; and includes a constant current charging step of carrying out constant current charging with a set charging current value I1 corresponding to a set value nC satisfying the condition represented by the expression of 2C≦nC≦60C, where C is a rated capacity value of the lithium ion secondary battery, and n is a number of 2 to 60.

A radiation-shielding attenuation structure and method of forming the attenuation structure, wherein the attenuation structure is made by additively manufacturing a concrete material that includes one or more attenuation dopants configured to enhance the radiation shielding of the concrete material. The one or more attenuation dopants may be configured in the concrete material to attenuate one or more types of radiation, such as electromagnetic radiation, gamma radiation, X-ray radiation, or neutron radiation. The attenuation structure formed by the concrete material may be additively manufactured on-site according to a model that has already been pre-certified for safe or secure use, thereby providing a repeatable and reproducible process that can reduce lead times and fabrication costs. The attenuation structure may be easily modified during the additive manufacturing process to have different concrete mixtures with different attenuation characteristics, which increases the tailorability and flexibility in design of the attenuation structure.