1684results about How to "Reduced characteristics" patented technology

Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

A solar cell assembly including a plurality of solar cells is formed on a common substrate, and a DC/DC converter which converts the output from the solar cell is connected to each solar cell to constitute a solar power generation apparatus. The output from the solar power generation apparatus is converted into an AC power by an inverter and supplied to a load or commercial AC power system. Since the arrangement is simplified, the manufacturing cost can be reduced, and the influence of partial shade or a variation in characteristic decreases.

A protective case for handheld devices with improved protection characteristics, durability, convenience of use, and functionalities without compromising aesthetics. The protective case includes a “glove” or “skin” piece of a softer material that substantially covers and grips the entire back of the electronic device, by wrapping over the edge of the electronic device (without obscuring the display/touch screen on the front of the device). One or more separate complementary frame pieces, braces and the like made of a hard material are attached over the glove piece, extending over a substantial area of the glove piece, thereby creating a robust interlocking hybrid structure. Openings are provided in the protective case to allow for user interaction with the device, including access to the interfaces (e.g., screens, buttons, sockets, etc.) provided on the device.

The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

In a standard cell, dummy transistors have p-type and n-type dummy gate electrodes. The dummy transistors are in an OFF state all the time. The gate length of each of the dummy gate electrodes is extended over an end portion of a diffusion region toward the inside of the standard cell. Thus, the total surface area and the total perimeter of respective gate electrodes of all transistors provided in the standard cell are increased. As a result, for example, even though shapes of gate electrodes of transistors vary between the standard cell and each of other standard cells, transistor characteristics are substantially equal among the standard cells. Therefore, variations in delays of signals generated between the standard cells can be suppressed.

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

An aspect of the present invention relates to a magnetic recording medium, which comprises a nonmagnetic layer containing a nonmagnetic powder and a binder and a magnetic layer containing a ferromagnetic powder and a binder in this order on a nonmagnetic support, wherein the nonmagnetic layer has a thickness of equal to or less than 300 nm; a composite elastic modulus as measured on a surface of the magnetic layer ranges from 6.0 to 8.0 GPa; the magnetic layer comprises an abrasive with a specific surface area by BET method ranging from 14 m²/g to 40 m²/g; and a surface abrasive occupancy on a surface of the magnetic layer ranges from 0.2% to 2%.

A protection circuit is provided for protecting a secondary battery from overcharging and excessive discharge current by a simple circuit. The protection circuit is provided with a connection terminal (T3) for connecting the secondary battery (6); a connection terminal (T1) for connecting a charging device for charging the secondary battery (6) and/or a load device driven by a discharge current from the secondary battery (6); a bimetal switch (SW1) that is provided between the connection terminals (T1, T3) and turned off in the case of exceeding a specified temperature set beforehand; a heater (R2) for heating the bimetal switch (SW1); and an integrated circuit (IC1) for turning the bimetal switch (SW1) off by causing the heater (R2) to generate heat if a voltage applied to the connection terminal (T3) by the secondary battery (6) exceeds a preset reference voltage.

According to the invention it is disclosed an absorbent pad (1) comprising a liquid-impervious back sheet (2), a plurality of bodies (3) of liquid-absorbent material disposed on one surface of the back sheet (2), and a liquid-pervious cover sheet (4) covering said bodies (3) of absorbent material and secured to the back sheet (2) along channels (7) which separate said bodies (3) of absorbent material. The channels (7) progresses in a channel-pattern in which three channels (7), meeting in a joint, form respective edges (6) of said whole bodies (3) and said channels (7) being substantially free from absorbent material. A method for the manufacturing of such absorbent pad (1) is also disclosed.

An automotive discharge bulb having a light emitting tube includes a ceramic tube with paired electrodes oppositely placed, and contains a light emitting material and starting rare gas. A transversal section of the ceramic tube is longitudinally elongated. Because the capacity of an enclosed space of the ceramic tube is small, after discharging begins, the enclosed space temperature increases. Consequently, the ceramic tube has a good luminous flux rising characteristic. Because of the small surface area of the ceramic tube, the load imposed on the wall surface increases. Consequently, the ceramic tube has good luminous efficiency. In the ceramic tube having a longitudinally elongated transversal section, an arc generated into an upwardly convex shape and the tube wall do not make contact. Thermal shock resistance required of the ceramic tube is alleviated, durability is enhanced, and the ceramic tube is made of a ceramic material hitherto unusable.

There is disclosed a reinforced structural assembly and a method of using the assembly for reinforcing components of an automotive vehicle. The assembly generally includes a first member and a second member with a reinforcement material intermediate the first and second member. According to the method, the assembly is placed in a cavity of an automotive vehicle and the reinforcement material is expanded to promote connection between the first member and a surface defining the cavity and to promote connection between the second member and another surface defining the cavity.

A memory effect distortion component compensating unit compensates for a distortion component caused by the memory effect of the amplifier by using a time difference of results from raising an input signal to even power. For example, the amplifier may include a memory effect distortion component compensating unit having an even power raising means for raising an input signal to even power, an even power raising result delaying unit for delaying a signal of a result of even power raising, an even power raising result time difference detecting unit for detecting a difference between a signal of an even power raising result and a delayed signal, an input signal multiplying unit for multiplying a signal of a detection result by an input signal, a distortion compensation coefficient multiplying unit for multiplying a signal of a multiplication result by a distortion compensation coefficient, and a distortion compensation coefficient multiplication result adding unit for adding an input signal and a signal of a multiplication result.

An organic electroluminescence display device with high luminescence and high display quality comprises a plurality of active elements, and a plurality of organic electroluminescence elements which produce luminescence through control by the active elements, on a substrate; wherein the organic electroluminescence element has a structure in which a lower electrode, an organic layer, and an upper electrode CD are laminated in this order from the substrate side; the upper electrode CD of the plurality of organic electroluminescence elements is formed as an electrode common to all the organic electroluminescence elements; an electrode is prepared between the upper electrode CD and the organic layer; and the sheet resistance between two points on the upper electrode CD which sandwich the electrode is lower than that between two points which do not sandwich the metal electrode.

A composite mat and sheet structure for installation atop a subfloor to underlie a layer of hardenable, cementicious material such as gypsum concrete or Portland concrete that is poured atop the composite structure to harden in situ. The composite structure includes 1) a mat of substantially uniform thickness defined by an array of entangled, intertwined polymeric filaments that twist and turn at random, that are spaced from each other along a majority of their lengths, that preferably are bonded at their randomly located intersections, and that cooperate to give the mat an open-space character well suited for venting vapor from an area beneath the layer of hardenable cementicious material during hardening or curing thereof; and 2) a sheet of barrier material that overlies the mat, is bonded to the mat, and is pervious to water vapor but impervious to water in liquid form, thereby to permit water in vapor form to escape from the hardenable material through the barrier sheet into the mat and to be vented through the open-space area of the mat while the barrier sheet protects the subfloor from damage by water in liquid form that should be confined atop the barrier.

An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and a second semiconductor layer including an i-type second oxide semiconductor is provided in contact with the other surface. The energy difference between a vacuum level and a Fermi level in the second oxide semiconductor is larger than that in the first oxide semiconductor. In the first semiconductor layer, a region in the vicinity of the junction surface with the second oxide semiconductor which satisfies the above condition is a region having an extremely low carrier concentration (a quasi-i-type region). By using the region as a channel, the off-state current can be reduced. Further, a drain current of the FET flows through the first oxide semiconductor having a high mobility; accordingly, a large amount of current can be extracted.

A method for manufacturing a semiconductor device provided with a circuit capable of high speed operation while the manufacturing cost is reduced. A method for manufacturing a semiconductor device which includes forming an ion-doped layer at a predetermined depth from a surface of a single-crystal semiconductor substrate and forming a first insulating layer over the single-crystal semiconductor substrate; forming a second insulating layer over part of an insulating substrate and forming a non-single-crystal semiconductor layer over the second insulating layer; bonding the single-crystal semiconductor substrate to a region of the insulating substrate where the second insulating layer is not formed, with the first insulating layer interposed therebetween; and forming a single-crystal semiconductor layer over the insulating substrate by separating the single-crystal semiconductor substrate at the ion-doped layer which acts as a separation surface so that the ion-doped layer is separated from the insulating substrate.