16 results about "Rare gas" patented technology

This invention discloses a method for producing high-purity oxygen based on LNG cold energy, belonging to the technical field of gas purification equipment. The implementation steps include: S1, pre-cooling and stepped heat exchange of raw air; S2, distillation separation process using LNG cold energy; S3, oxygen purification and argon separation; S4, cold energy recycling. This invention can improve the purity of oxygen, making the molar purity of oxygen above 99.9%, and rationally utilize LNG cold energy to liquefy raw air, reducing air separation costs. In addition, by coupling a crude argon tower, argon with a molar fraction of 7.4% can be produced for the utilization of rare gases.

This invention discloses a method for accurately tracing geological hydrogen migration, belonging to the field of geological hydrogen exploration and migration tracing technology. The invention involves preparing stable hydrogen isotopes and radioactive tritium tracers with specific geochemical fingerprints and injecting them into target geological units; deploying a three-dimensional monitoring network including sensor arrays and automatic samplers to collect hydrogen concentration data and gas samples in real time; laboratory analysis to determine hydrogen isotope composition and rare gas concentrations, using an N2-He-Ar ternary diagram to identify gas sources and eliminate interference; integrating data and performing numerical simulations using migration control equations coupled with isotope fractionation effects, optimizing parameters through inversion algorithms; and generating a three-dimensional visualization map of hydrogen migration paths and a quantitative report based on the inversion results. This invention achieves a breakthrough in geological hydrogen migration from qualitative detection to quantitative tracking, significantly improving the reliability and accuracy of tracing, enabling real-time dynamic capture of the migration process, and providing precise decision-making basis for hydrogen exploration.

This invention discloses a gas purification device for neutron-activated argon isotope dating based on a D-D accelerator, belonging to the field of rare gas isotope mass spectrometry analysis and geological dating technology. Addressing the limitations of traditional gas purification systems, which suffer from large internal volumes and high static release rates, making them unsuitable for the efficient purification and enrichment of trace argon isotopes generated by the D-D accelerator neutron activation method, this invention employs an integrated 316L stainless steel substrate, internally integrating a main gas flow channel and multiple branch channels. The substrate houses a sample gas injection module, a primary purification module, a secondary purification module, a tertiary purification module, a vacuum preparation and monitoring module, a standard gas injection module, and a gas enrichment module. Each module is connected to the main gas flow channel via branch channels, achieving multi-stage purification of the mixed gas and low-temperature enrichment of trace argon isotopes. This device is used for gas purification in D-D accelerator neutron-activated argon isotope dating, meeting the requirements for efficient purification and enrichment of extremely small amounts of argon gas.

This invention relates to an oxidation-induced lattice softening etching method and patterning method for metal chalcogenide layers, and a method for fabricating transistor devices. The oxidation-induced lattice softening etching method of this invention includes: (A1) plasma treatment of the metal chalcogenide layer in an atmosphere containing O2 and / or O3, wherein the metal chalcogenide layer contains a metal chalcogenide compound that produces a non-volatile etching residue in any atomic layer etching method, and is composed of the formula XY. n The method is defined as follows: X is a metallic element, Y is sulfur, selenium, or tellurium, and n is 1 to 4; (A2) Plasma etching is performed on the oxidized metal chalcogenide layer in an inert rare gas atmosphere, wherein the etching power is lower than the threshold power required for plasma etching of the exposed, unoxidized substrate in the same atmosphere. The patterning method and transistor device fabrication method of the present invention are based on this etching method.

The application relates to a Kr separation method and system based on selective desorption, a terminal and a storage medium, and relates to the technical field of rare gas purification, which comprises the following steps: collecting a historical krypton loss amount; calculating the difference between the quotient of the historical krypton loss amount and the mass of an adsorption column and the initial unit krypton adsorption amount, so as to generate an actual unit krypton adsorption amount; calculating the quotient between the product of the actual unit krypton adsorption amount and the mass of the adsorption column and the single-time air flow speed to be adsorbed, so as to generate an actual adsorption time; controlling a primary adsorption column to adsorb air to be adsorbed according to the actual adsorption time, so as to generate an adsorption column to be separated; controlling an adsorption column cleaning device to clean the adsorption column to be separated according to the actual unit krypton adsorption amount, and collecting the desorbed gas after cleaning to a waste gas storage device; performing a desorption operation on the cleaned adsorption column, controlling a gas collecting device to collect the desorbed gas, and heating and activating the primary adsorption column to recover the adsorption capacity. The application has the effect of reducing krypton loss.

The invention provides a plasma processing method capable of constructing a self-limited process excellent in mass productivity in a cycle etching method in which an adsorption step of forming a reaction layer on a surface of an etching target wafer and a desorption step of removing the formed reaction layer using a rare gas in a metastable state are repeated. The plasma processing method includes: an adsorption step of forming a reaction layer on an etching target film by plasma generated using a reactive gas; and a desorption step of removing the reaction layer using the rare gas in the metastable state generated by the plasma. The adsorption step and the desorption step are repeated, and a pressure of the adsorption step is higher than a pressure of the desorption step.

This invention discloses a leak detection method, apparatus, and system for switchgear, relating to the field of medium-voltage gas-insulated switchgear. The method includes acquiring the content of a detection gas collected by a detection device located outside the gas chamber of the switchgear; pre-injecting the detection gas into the gas chamber; the detection gas being a rare gas in the air composition; determining a leak at the location of the detection device when the detected gas content exceeds a threshold; and reporting the location to a host computer for replacement of the gas chamber's sealing ring. The detection gas can be detected by the detection device, avoiding the problem of pure air being unable to detect leaks. Furthermore, the detected air is a gaseous component of the air and has no environmental impact, making it more environmentally friendly. The leak detection is more accurate, improving the operational reliability of the switchgear and enhancing the safety of the power grid.

The application discloses a nonmetal heating device for obtaining high-temperature rare gas, which comprises a graphite heating inner tube, a silicon carbide ceramic outer tube, an electromagnetic induction coil group, an electromagnetic induction heating power supply, a flange and a gasket, a heat insulation layer, an inlet and outlet pipeline and a protection box. The graphite heating inner tube is heated to a high-temperature state of more than 1500 DEG C under the action of induction electric heating. Low-temperature rare gas enters the closed sleeve formed by the graphite inner tube and the silicon carbide outer tube through the inlet pipeline, is heated and at the same time provides a protective atmosphere for the graphite tube, and then high-temperature rare gas reaching a state of more than 1000 DEG C flows out through the outlet pipeline. The electromagnetic induction coil and the heated sleeve are wrapped in the protection box, so that heat leakage is reduced, the fragments splashing when the nonmetal material is broken are prevented, and the overall safety performance is improved. The whole heating device is connected through flanges. The heating device meets the requirement of heating gas to a higher temperature, can be safely operated stably and for a long time, and meets the current processing technology requirement.

The utility model discloses a kind of silica gel adsorbers for krypton xenon rare gas purification, belong to krypton xenon rare gas purification field, including adsorber shell, the adsorber shell is composed of upper chamber and lower chamber, material plate is equipped in the upper chamber, the material plate is set, flow control assembly is equipped between the upper chamber and lower chamber;Through the material plate of upper chamber and adjusting plate abut, and the aperture, perforation one-to-one correspondence of both, cooperate flow control assembly can accurately adjust ventilation area, upper chamber and lower chamber can be filled with different function adsorption material respectively, realize staged adsorption to complex impurity in raw gas, improve the comprehensiveness of impurity removal, simultaneously, by the aperture overlap degree adjustment of adjusting plate and material plate, can optimize the flow path of gas in chamber, ensure that gas and adsorbent contact fully, solve the problem of low utilization rate of adsorbent in traditional structure, improve overall adsorption efficiency and final purification precision.

A method for etching silicon at a low-temperature temperature is provided. The method includes: forming an inert layer on an exposed surface, such as multiple sidewalls of a feature, by condensation of a rare gas at a low-temperature temperature to passivate the sidewalls prior to an etching process. The method further includes: infusing a fluorinated precursor gas into a chamber to form a fluorinated layer on the inert layer. The method further includes: exposing the fluorinated layer and the inert layer to an energy source to form a passivation layer on multiple exposed portions of a substrate, and exposing the substrate to ions to etch the substrate.

The ion introduction device of the present application is provided with a mixed gas generating section, a sample supply section, and an interface section. The mixed gas generating section generates and discharges a mixed gas of a rare gas and nitrogen. The sample supply section is arranged to contact the mixed gas discharged from the mixed gas generating section with a sample under atmospheric pressure to form a mixed gas containing a sample component. The interface section has a gas discharge port that communicates with an external gas exhaust system, forms a sealed region that communicates with a mass spectrometer, and maintains the sealed region at a negative pressure by the external gas exhaust system. The mixed gas containing the sample component is introduced into the sealed region, the mixed gas containing the sample component is excited and ionized by dark discharge, and the sample component ionized is introduced into the mass spectrometer from a transfer port of the mass spectrometer. The present application provides an ion introduction device that can stably and continuously maintain low voltage dark discharge under atmospheric pressure, is not affected by the surrounding environment, can stably ionize, and can be safely used.

The application discloses a kind of microporous metal organic framework materials and preparation and rare gas separation method, belong to chemical adsorption separation technical field, microporous metal organic framework material is made of divalent metal ion, heterocyclic dicarboxylic acid ligand and nitrogen-containing heterocyclic ligand coordination construction;Divalent metal ion and heterocyclic dicarboxylic acid ligand coordination forms two-dimensional polymer, nitrogen-containing heterocyclic ligand as pillar, by with two-dimensional polymer coordination forms three-dimensional framework structure.Microporous metal organic framework material is used as adsorbent, and is contacted with rare gas mixed gas phase, realizes to high polarity rare gas identification capture, reaches the separation and purification of rare gas.The present application realizes the accurate control of pore chemistry electrostatic environment by changing different ligand and its functional group substituent, so as to realize the selective separation of xenon / krypton and helium / neon and other rare gas.

The application discloses a krypton-xenon refining and extracting method and relates to the technical field of cryogenic rare gas separation. The method comprises the following steps: pressurizing a tank containing krypton-xenon crude liquid to 0.15 MPa; inputting raw krypton-xenon gas obtained through primary roasting, cooling and purification into a secondary concentration module, and controlling the gaseous side, the liquid side and the oxygen outlet temperature of a secondary concentration tower evaporator; gasifying and filling a bottle with the krypton-xenon mixed liquid, and performing secondary roasting, cooling and purification; inputting the obtained krypton-xenon mixed gas into a krypton-xenon separation module, obtaining crude krypton with ≤1 ppm xenon at the top of the krypton-xenon separation tower, obtaining crude xenon with ≤1 ppm krypton at the bottom of the krypton-xenon separation tower, removing CF4 in a krypton I tower, removing CH4 and oxygen in a krypton II tower, and obtaining high-purity krypton; inputting the crude xenon into a pure xenon module, removing hydrocarbons and NO and C2F6 in a xenon I tower, removing CF4 in a xenon II tower, and obtaining high-purity xenon. The method can improve the utilization rate of krypton-xenon raw liquid, and improve the product purity and yield.

The application belongs to the technical field of phase change, and particularly relates to a water vapor phase change condition calculation method suitable for high-altitude rare gas environment, comprising the following steps: determining the aerodynamic process characteristic length according to the research object; calculating continuity from the water vapor molecule thermal motion velocity distribution; obtaining the actual static pressure of water vapor molecules in the flow field from the continuity; calculating the Gibbs free energy of different phase state water under local working conditions from the actual pressure; and obtaining the phase change condition according to the Gibbs free energy distribution of different phase state water. The water vapor phase change condition calculation method considers the phase change process change rule under the influence of real gas effect, thereby providing a reliable gas component phase change process calculation method in high-altitude exhaust flow, ensuring the reliability of the flow field calculation result, further perfecting the numerical simulation of the engine exhaust flow field distribution, and providing protection for improving the aerospace engine development capability.

The application discloses a multi-field coupling reinforced separation and purification system and method, and belongs to the field of separation and purification technology. The system comprises a vacuum pump, at least one set of deep-cold cyclone separation device, at least one set of electric field reinforced molecular distillation device and a control system. The vacuum pump is communicated with the deep-cold cyclone separation device and the electric field reinforced molecular distillation device respectively, and provides a vacuum environment for the two. The deep-cold cyclone separation device comprises a cyclone separator and a cavity formed by an inner cylinder and an outer cylinder of the deep-cold cyclone separation device, and is provided with a gas collecting hood and liquid inlet and outlet valves. The electric field reinforced molecular distillation device comprises an outer cylinder and an inner cylinder of the electric field reinforced molecular distillation device, a liquid inlet pipe and a liquid inlet valve. The application is suitable for a deep-cold medium, a rare gas and a mixed system of the liquefied rare gas and a part of organic small molecule systems. The self-adaptive operation of different material systems and target purity requirements can be realized through the synergistic adjustment of vacuum, pressure and electric field parameters, and the feasibility of engineering amplification and continuous operation is improved.