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8206 results about "Bromine" patented technology

Bromine is a chemical element with symbol Br and atomic number 35. It is the third-lightest halogen, and is a fuming red-brown liquid at room temperature that evaporates readily to form a similarly coloured gas. Its properties are thus intermediate between those of chlorine and iodine. Isolated independently by two chemists, Carl Jacob Löwig (in 1825) and Antoine Jérôme Balard (in 1826), its name was derived from the Ancient Greek βρῶμος ("stench"), referencing its sharp and disagreeable smell.

Method of etching patterned layers useful as masking during subsequent etching or for damascene structures

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
Owner:APPLIED MATERIALS INC

Method of pattern etching a low K dielectric layer

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
Owner:APPLIED MATERIALS INC

Process for control of the shape of the etch front in the etching of polysilicon

The present disclosure pertains to our discovery that the use of a particular combination of etchant gases results in the formation of a substantially flat etch front for polysilicon etching applications. In general, the process of the invention is useful for controlling the shape of the etch front during the etchback of polysilicon. Typically, the process comprises isotropically etching the polysilicon using a plasma produced from a plasma source gas comprising a particular combination of reactive species which selectively etch polysilicon. The plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. One preferred mixture is SF6, Cl2 and HBr. A preferred method of the invention, used to perform recess etchback of a polysilicon-filled trench in a substrate, comprises the following steps: a) providing a trench 3 formed in a semiconductor structure, wherein the structure includes a substrate 2, at least one gate dielectric layer 6 overlying a surface of the substrate, and at least one etch barrier layer 8 overlying the gate dielectric layer; b) forming a conformal dielectric film 10 overlying the etch barrier layer and the sidewall and bottom of the trench; c) filling the trench with a layer of polysilicon 12 which overlies the conformal dielectric film; and d) isotropically etching the polysilicon back to a predetermined depth within the trench using a plasma produced from the invention plasma source gas. Also disclosed herein is a method of forming a trench capacitor in a single-crystal silicon substrate, the trench capacitor including a dielectric collar and a buried strap.
Owner:APPLIED MATERIALS INC

Method for continuously preparing regenerated cellulose fibre

The invention discloses a method for continuously preparing regenerated cellulose fibers through the solvent method, comprising the following steps that: a cellulose raw material is dissolved into an ion liquid to prepare a spinning liquid; gel type regenerated cellulose fibers are obtained through spinning; and the regenerated cellulose fibers are obtained through cleaning, rear draft and drying, wherein, the ion liquid is selected from one or a plurality among the following ion liquids: a). an ion liquid with 1, 3-dialkyl imidazole as a cation and formiate radical, radical vinegar or propionate radical as an anion; and b). an ion liquid with 1-R1-3-R2- dialkyl imidazole as the cation and chlorine, bromine, iodine, formiate radical, radical vinegar, sulfate radical, nitrate radical, tetrafluoroborate radical, thiocyanate radical, hexafluorophosphate radical, p-toluenesulfonate radical or trifluoromethanesulfonic acid radical as the anion. The method has the advantages of wide technological range, mild temperature condition, adequate pressure, quick spinning speed and so on, can prepare the regenerated cellulose fibers with superior performance and complete specifications, and has low production cost, high production efficiency and wide application prospect.
Owner:INST OF CHEM CHINESE ACAD OF SCI +1

Bromomethane prepared by bromine oxidation of methane and catalyst for conversing the bromomethane into hydrocarbon

The invention discloses a catalyst which is used when methane is transformed into hydrobromic ether through the bromine oxidation reaction, and the catalyst which is used when preparing heavy hydrocarbons by using the hydrobromic ether further, and belongs to the technology field of the catalyst and the preparation method thereof. The first type of catalyst which is used when the methane is transformed into the hydrobromic ether through the bromine oxidation reaction comprises the preparation step that water-soluble metallic compound precursors such as Rh, Ru, Cu, Zn, Ag, Ce, V, W, Cd, Mo, Mn, Cr, La, etc. are mixed with a silica precursor, the mixture is processed through hydrolyzation, drying and roasting, and then the catalyst is obtained; the first type of catalyst can lead definite masses of reactant composed of the methane, HBr, H2O and oxygen sources (that is O2, air or oxygen-enriched air) to perform the catalytic bromine oxidation reaction, to generate target products such as CH3Br, CH2Br2, etc. The second type of catalyst, which is used when preparing the heavy hydrocarbons by using the hydrobromic ether further, includes the preparation step that molecular sieves such as HZSM-5, HY, H Beta, 3A, 4A, 5A, 13X, etc. load metallic compounds composed of Zn and Mg, so that the catalyst is obtained; the second type of catalyst can lead the methane bromination products composed of the CH3Br and the CH2Br2 to further react so as to generate the heavy hydrocarbons containing C3 to C13 and HBr, wherein, the HBr is used as a circular reaction medium.
Owner:MICROVAST POWER SYST CO LTD
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