3871 results about "Bromine" patented technology

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

Process for removing mercury from flue gases of high-temperature plants, in particular power stations and waste incineration plants in which a bromine compound is fed to the multistage furnace and/or the flue gas in a plant section downstream of the furnace, the temperature during contact of the bromine compound with the flue gas being at least 500° C., preferably at least 800° C. The combustion is carried out in the presence of a sulphur compound, in particular sulphur dioxide. Subsequently to the furnace, the flue gas is subjected to an optional multistage cleanup for removing mercury from the flue gas, which cleanup comprises a wet scrubber and/or a dry cleanup.

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX_Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.

This invention generally relates to low temperature epitaxy. More specifically, this invention relates to processes for achieving low temperature selective epitaxial growth by chemical vapor deposition of source precursors containing Si or Ge in the presence of bromine or iodine, compositions containing precursors and brominated or iodinated compounds suitable for achieving selective epitaxial growth using the processes, epitaxial layers made using the processes, devices and other types of structures made using the processes, and processes for cleaning epitaxy reactor chambers using a bromine etchant source.

This invention provides a kind of magnesium halide adducts, whose general chemical formula is MgX2-mROH-nE-pH2O (I), wherein, X is Cl or Br; R is C1-C12 alkyl, C3-C10 cycloalkyl or C6-C10 aryl; E is dialkoxy hydrocarbon compound as shown in formula (II); m is 1-5; n is 0.005-1.0; p is 0-0.8. In formula (II), R1, R2, R3 and R4 are the same or different, and are H or C1-C10 linear or branched alkyl, C3-C10 cycloalkyl, C6-C10 aryl, C7-C10 alkylaryl or arylalkyl; two or more groups of R1 and R2 can bond into one or several fused rings; H is aryl or alkylaryl or H in benzene ring of arylalkyl can be substituted by halogen.

Disclosed are a blue phosphorescent compound with a high color purity and a high efficiency, and an organic electroluminescent device using the same. The blue phosphorescent compound is represented by the following Formula:

wherein R1 to R5 are each independently hydrogen (H), fluorine (F), chlorine (Cl), bromine (Br), a cyano group, a C1 to C6 alkyl group, a C1 to C6 alkoxy group, a C6 to C20 substituted or unsubstituted aromatic group, a C5 to C20 substituted or unsubstituted heterocyclic group, a C1 to C6 amine group, a C6 to C20 aromatic-substituted amine group, or a C5 to C20 heterocycle-substituted amine group, X is selected from nitrogen (N), oxygen (O), phosphorous (P) and sulfur (S) atoms, at least one of A1, A2, A3 and A4 is nitrogen (N), and the remaining are selected from hydrogen (H)-substituted carbon, and alkyl or alkoxy-substituted carbon, L is a monodentate or bidentate ligand and n is 1 to 3.

A method of chemically depositing a copper film in which a bromine or iodine-containing catalyst component is employed to enhance the deposition rate. The present invention is characterized in that the catalyst component floats on the film surface during the film formation. Accordingly, a film deposition having superior step coverage and high deposition rate is obtained.

Processes for producing terephthalic acid are disclosed, the processes comprising combining in a reaction medium p-xylene, a solvent comprising water and one or more saturated organic acids having from 2-4 carbon atoms, and an oxygen-containing gas, at a temperature from about 135° C. to about 165° C., in the presence of a catalyst composition comprising cobalt atoms and manganese atoms, with bromine atoms provided as a promoter. The amount of cobalt used may be from about 1,800 ppm to about 6,000 ppm, with respect to the total weight of the liquid in the reaction medium, and the weight ratio of cobalt to manganese may be from about 40 to about 400. The processes according to the invention produce terephthalic acid as a precipitated reaction product, with typically no more than about 10 ppm 2,6-dicarboxyfluorenone produced, with respect to the weight of the terephthalic acid produced, or no more than about 20 ppm 2,6-dicarboxyfluorenone, with respect to the total weight of the reaction medium, per batch or upon one pass through a reactor. The terephthalic acid so produced may be further purified by one or more additional oxidation reactions, without the need for expensive hydrogenation purification processes.

This invention describes a method for stabilizing bromine biocides in water. A water-soluble bromide salt and a sulfamate source are added to a body of water, and then an oxidant is added to the body of water to form the biocidal bromine species.

Sodium chloride and purified water are recovered by treating salt water that contains sodium chloride with an integrated reverse osmosis and electrodialysis system, which includes an efficiency-enhancing feature that is one or more of the following: the use of univalent anion and univalent cation selective membranes in the electrodialysis unit; the addition of a nanofiltration unit to process the diluate from the electrodialysis unit; or operation of the electrodialysis unit at an elevated pressure. Magnesium and bromine can optionally be produced when the salt water contains these materials.

Disclosed is a sorbent for the removal of mercury from combustion flue gas and a preparation method thereof. The sorbent includes an activated heavy oil heavy ash impregnated with 0.1-30% by weight of any chemical substance selected from sulfur, iodine, bromine and chlorine. The sorbent is prepared in an economical manner using heavy oil fly ash, industrial waste generated from heavy oil-fired boilers, and has excellent sorption performance for mercury, so that a low concentration of mercury contained in combustion flue gas discharged from large-scale boilers can be removed by injection of a small amount of the sorbent. Thus, the invention can prevent a reduction in the recycling rate of coal fly ash in coal-fired power plants and minimize operation cost.

Provided is a method of producing FDCA by which high-purity FDCA can be produced in high yield. 2,5-furandicarboxylic acid is produced by: bringing 5-hydroxymethylfurfural into contact with an oxidant in an organic acid solvent in the presence of bromine and a metal catalyst; and allowing 5-hydroxymethylfurfural and the oxidant to react with each other while removing water produced by the reaction.

The present invention relates to novel synthetic methods for the preparation of intermediates of 3{5-[3-(4,6-Difluoro-1H-benzoimidazol-2-yl)-1H-indazol-5-yl]4-methyl-pyridin-3-yl methyl}-ethyl-amine.

The invention provides a magnesium halide addition compound shown as general formula MgX2-mROH-nE-pH2O, wherein, X refers to chlorine or bromine, R refers to the alkyl of C1-C12; naphthene base of C3-C10 or the aryl of the C6-C10; E refers to o-alkoxybenzoic ether compound shown in the general formula (II); m ranges from 1 to 5; n ranges from 0.005 to 1.0; and P ranges from 0 to 0.8.

Disclosed is a process for the synthesis of 1,3,3,3-tetrafluoropropene that comprises, in one preferred embodiment, providing a compound of the formula CF₃CH₂CHFX, wherein X is a selected from the group consisting of chlorine, bromine and iodine, and exposing said compound to reaction conditions effective to convert said compound to 1,3,3,3-tetrafluoropropene. Other processes for forming 1,3,3,3-tetrafluoropropene are also disclosed.

A method of etching a deep, high aspect ratio opening in a silicon substrate includes etching the substrate with a first plasma formed using a first gaseous mixture including a bromine containing gas, an oxygen containing gas and a first fluorine containing gas. The etching process with the first gaseous mixture produces a sidewall passivating deposit, which builds up near the opening entrance. To reduce this buildup, and to increase the average etching rate, the sidewall passivating deposit is periodically thinned by forming a second plasma using a mixture containing silane and a second fluorine containing gas. The substrate remains in the same plasma reactor chamber during the entire process and the plasma is continuously maintained during the thinning step. Holes of a depth greater than 40 times the width may be produced using repeated cycles of etching and thinning.

This invention relates to a thermally stable brominated polystyrene having less than 100 ppm total Cl-, above about 68 wt % bromine and less than about 6,000 ppm hydrolyzable halide. The brominated polystyrene exhibits little or no polymer cross-linking or chain cleavage relative to the starting polystyrene.

The present invention discloses a thermosetting resin composition including: a bi-functional or multi-functional epoxy resin, a SMA uses as a curing agent, an allyl phenol such as diallyl bisphenol A used as a co-curing agent and a toughening agent a low-bromine or high-bromine BPA epoxy resin or tetrabromobispheno A (TBBPA or TBBA) uses as a flame retardant agent, and an appropriate solvent. After the resin composition of the invention is cured, the resin composition has lower dielectric property and better thermal reliability and tenacity. A copper clad laminate made of an enhanced material such as glass fiber has lower dielectric constant (Dk) and loss tangent (Df), high Tg, high thermal decomposition temperature (Td), better tenacity and PCB manufacturability, and thus very suitable to be used as a copper clad laminate and a prepreg for manufacturing PCBs or applied as a molding resin material for contraction, automobile and air navigation.

An electrically conductive adhesive composition which has flexibility and folding endurance and is feasible for use as a shield against electromagnetic waves from a flexible printed circuit, comprises 100 parts by weight of (a) an acrylonitrile-butadiene copolymer, 20 to 500 parts by weight of (b) a phenolic resin and/or an epoxy resin, 1 to 100 parts by weight, per 100 parts by weight of the components (a) and (b) in total, of (c) an electrically conductive filler and 1 to 50 parts by weight, per 100 parts by weight of the components (a) and (b) in total, of (d) a bromine-containing flame retardant.

In order to degrade the pollutants in water and atmosphere by the photocatalysis technology, the invention discloses a method for preparing a high activity non-metallic ion co-doped titanium dioxide photochemical catalyst. In the photochemical catalyst, titanium ester or titanate is used as a precursor, non-metallic compound comprising boron, carbon, nitrogen, fluorin, silicon, phosphor, sulfur, chlorine, bromine, iodine, and the like, are used as doping agents, the high activity non-metallic ion co-doped titanium dioxide photochemical catalyst is prepared by adopting the sol gel method. Compared with a titanium dioxide photochemical catalyst single-doped with pure titanium dioxide and the non-metallic irons, the visible light catalytic activity of the titanium dioxide photochemical catalyst on the degradation of parachlorophenol is greatly improved, and the ultraviolet light catalytic activity can also exceed the catalytic activity of the pure titanium dioxide catalyst. The method also has the advantages that the preparation technique is simple, the equipment requirement is low; the particle diameter of the product is small, the specific surface is relatively high, the dispersivity is good, thus having a wide application prospect in the environmental cleaning scientific field.

Methods and compositions related to treating, controlling or inhibiting acne vulgaris by reducing or inhibiting growth of Proprionibacterium acnes employing a compound having the following structure:

or a pharmaceutically acceptable salt thereof,

• • wherein R₁, R₂, R₃ and R₄ are selected from a group consisting of a carboxyl group, methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, secondary butyl group, tertiary butyl group, pentyl group, isopentyl group, neopentyl group, fluorine, chlorine, bromine, iodine and hydrogen.

Disclosed herein is a method for removing mercury from a gas stream comprising contacting the gas stream with a getter composition comprising bromine, bromochloride, sulphur bromide, sulphur dichloride or sulphur monochloride and mixtures thereof. In one preferred embodiment the getter composition is adsorbed onto a sorbent. The sorbent may be selected from the group consisting of flyash, limestone, lime, calcium sulphate, calcium sulfite, activated carbon, charcoal, silicate, alumina and mixtures thereof. Preferred is flyash, activated carbon and silica.

A process for converting gaseous alkanes to olefins and liquid hydrocarbons wherein a gaseous feed containing alkanes is reacted with a dry bromine vapor to form alkyl bromides and hydrobromic acid vapor. The mixture of alkyl bromides and hydrobromic acid are then reacted over a synthetic crystalline alumino-silicate catalyst, such as an X or Y type zeolite, at a temperature of from about 250° C. to about 500° C. so as to form olefins, higher molecular weight hydrocarbons and hydrobromic acid vapor. Various methods are disclosed to remove the hydrobromic acid vapor from the higher molecular weight hydrocarbons and to generate bromine from the hydrobromic acid for use in the process.

T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

A solid-solid hybrid gas generator composition includes a solid gas generator material and a solid, flame retardant material. The flame retardant material may include one or more bromine-, chlorine- and phosphorous-containing compounds. The gas generator material and flame retardant material may be in the same vessel.

The present invention provides novel amino acid compounds useful in detecting and evaluating brain and body tumors. These compounds have the advantageous properties of rapid uptake and prolonged retention in tumors and can be labeled with halogen isotopes such as fluorine-18, iodine-123, iodine-124, iodine-125, iodine-131, bromine-75, bromine-76, bromine-77, bromine-82, astatine-210, astatine-211, and other astatine isotopes. These compounds can also be labeled with technetium and rhenium isotopes using known chelation complexes. The compounds disclosed herein bind tumor tissues in vivo with high specificity and selectivity when administered to a subject. Preferred compounds show a target to non-target ratio of at least 2:1, are stable in vivo and substantially localized to target within 1 hour after administration. Preferred compounds include 1-amino-2-[¹⁸F]fluorocyclobutyl-1-carboxylic acid (2-[¹⁸F]FACBC) and 1-amino-2-[¹⁸F]fluoromethylcyclobutyl-1-carboxylic acid (2-[¹⁸F]FMACBC). The labeled amino acid compounds of the invention are useful as imaging agents in detecting and/or monitoring tumors in a subject by PET or SPECT.

A semiconductor structure having silicon dioxide layers of different thicknesses is fabricated by forming a sacrificial silicon dioxide layer on the surface of a substrate; implanting nitrogen ions through the sacrificial silicon dioxide layer into first areas of the semiconductor substrate; implanting chlorine and/or bromine ions through the sacrificial silicon dioxide layer into second areas of the semiconductor substrate where silicon dioxide having the highest thickness is to be formed; removing the sacrificial silicon dioxide layer; and then growing a layer of silicon dioxide on the surface of the semiconductor substrate. The growth rate of the silicon dioxide will be faster in the areas containing the chlorine and/or bromine ions and therefore the silicon dioxide layer will be thicker in those regions as compared to the silicon dioxide layer in the regions not containing the chlorine and/or bromine ions. The growth rate of the silicon dioxide will be slower in the areas containing the nitrogen ions and therefore the silicon dioxide layer will be thinner in those regions as compared to the silicon dioxide layer in the regions not containing the nitrogen ions. Also provided are structures obtained by the above process.

Compounds corresponding to formula (I)F2C=CFX(CY2)nBr (I)in which: X represents an atom of oxygen or no atom; Y represents an atom of hydrogen or of fluorine; and n is a whole natural number ranging from 0 to 10 inclusive, excluding bromotrifluoroethylene, 3-bromo-perfluoropropene, 4-bromo-1,1,2,-trifluorobutene, 4-bromo-perfluorobutene-1 and perfluoro(2-bromo-ethylvinyl ester), and their use in the synthesis of fluorinated copolymers then in the synthesis of homosulphonated fluorinated elastomers, exhibiting a low glass transition temperature.

The catalyst contains noble metal in 0.1-1.0 wt% as active component, alkali metal or alkali metal in 0.05-0.50 wt% as assistant and refractory inorganic oxide as carrier. It has specific surface area of 150-250 sq m/g and pore volume of 0.3-0.8 ml/g. It is used in the selective hydrogenation and oleine removing of gasoline fraction reformate in reaction temperature 150-250 deg.c, reaction pressure 1.5-3.0 MPa and volume space velocity 2.0-4.0/hr. It may result in product bromine index less than 100 mg Br/100 g, arene loss less than 0.5 wt% and satisfactory results.