12 results about "Anisotropic plasma" patented technology

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

A method for processing a substrate, the method comprising: patterning a carbon-based hard mask layer on a dielectric layer to form a first recess in the carbon-based hard mask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height lower than the first height; depositing a metal-containing layer on the patterned carbon-based hard mask layer, the metal-containing layer being in physical contact with sidewalls of the patterned carbon-based hard mask layer in the first recess, the metal-containing layer being thicker at a first height than at a second height; and etching the dielectric layer by an anisotropic plasma etch process using the patterned carbon-based hard mask layer as an etch mask to form a second recess in the dielectric layer.

A method for processing a substrate that includes: patterning a carbon-based hardmask layer over a dielectric layer to form a first recess in the carbon-based hardmask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height that is lower than the first height; depositing a metal-containing layer over the patterned carbon-based hardmask layer, the metal-containing layer being physically in contact with sidewalls of the patterned carbon-based hardmask layer in the first recess, the metal-containing layer being thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hardmask layer as an etch mask by an anisotropic plasma etch process to form a second recess in the dielectric layer.

A method for processing a substrate that includes: patterning a carbon-based hardmask layer over a dielectric layer to form a first recess in the carbon-based hardmask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height that is lower than the first height; depositing a metal-containing layer over the patterned carbon-based hardmask layer, the metal-containing layer being physically in contact with sidewalls of the patterned carbon-based hardmask layer in the first recess, the metal-containing layer being thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hardmask layer as an etch mask by an anisotropic plasma etch process to form a second recess in the dielectric layer.

A method for processing a substrate that includes: patterning a carbon-based hardmask layer over a dielectric layer to form a first recess in the carbon-based hardmask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height that is lower than the first height; depositing a metal-containing layer over the patterned carbon-based hardmask layer, the metal-containing layer being physically in contact with sidewalls of the patterned carbon-based hardmask layer in the first recess, the metal-containing layer being thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hardmask layer as an etch mask by an anisotropic plasma etch process to form a second recess in the dielectric layer.

A method of processing a substrate with a vertical feature and a plurality of lateral features extending from the vertical feature is provided. The method includes exposing surfaces of the vertical feature and the plurality of lateral features to an anisotropic plasma generated from an inhibiting gas mixture to form an inhibition gradient on surfaces of the vertical feature and the plurality of lateral features, and depositing a gapfill structure in the vertical feature and lateral features. In an embodiment, the inhibition gradient provides for varying the growth rate of the gapfill structure in the vertical feature and the plurality of lateral features.

A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

A method for processing a substrate, comprising: patterning a carbon-based hard mask layer on a dielectric layer to form a first recess in the carbon-based hard mask layer, wherein the first recess has a tapered profile such that the width of the first recess at a first height is greater than the width of the first recess at a second height lower than the first height; depositing a metal-containing layer on the patterned carbon-based hard mask layer, wherein the metal-containing layer is in physical contact with the sidewall of the patterned carbon-based hard mask layer in the first recess, and the metal-containing layer is thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hard mask layer as an etch mask by an anisotropic plasma etching process to form a second recess in the dielectric layer.

A method of processing a substrate with a vertical feature and a plurality of lateral features extending from the vertical feature is provided. The method includes exposing surfaces of the vertical feature and the plurality of lateral features to an anisotropic plasma generated from an inhibiting gas mixture to form an inhibition gradient on surfaces of the vertical feature and the plurality of lateral features, and depositing a gapfill structure in the vertical feature and lateral features. In an embodiment, the inhibition gradient provides for varying the growth rate of the gapfill structure in the vertical feature and the plurality of lateral features.

To improve productivity in manufacturing a chip by dividing a conjugate along a predetermined dividing line.SOLUTION: A chip manufacturing method includes: a joint material removal step 1100 of cutting a wafer of a conjugate from a front face side along a predetermined dividing line with a cutting blade and exposing a support substrate by removing a joint material, which hinders plasma etching of the conjugate when performing the plasma etching with a gas turned to plasma, using the cutting blade; a mask formation step 1200 of forming a mask by covering the front face of the wafer with a protective film before or after the joint material removal step 1100; a plasma etching step 1300 of dividing the conjugate into a plurality of chips by applying anisotropic plasma etching from the front face side of the wafer to the support substrate with the gas turned to plasma along the predetermined dividing line after the joint material removal step 1100 and the mask formation step 1200; and a mask removal step 1400 of removing the mask from the wafer after the plasma etching step 1300.SELECTED DRAWING: Figure 5

Method for producing a rounded conductor track (411) of a semiconductor device comprising the steps: Providing a partially completed semiconductor device with a bottom surface (12) and a top surface (11') spaced apart in a vertical direction (v) from the bottom surface (12); Providing an etching agent; Arranging a dielectric layer (2) on the top surface (11'), wherein the dielectric layer (2) - has at least two different areas (21, 22, 23, 24, 25) which, when etched with the etchant, exhibit different etch rates; as well as - a base material which is doped with at least one dopant which has a non-constant concentration profile (c) in the vertical direction (v) with a gradient (dc(v) / dv) of at least 1 wt.% per µm, wherein the dopant influences the etch rate of the doped base material when it is etched with the etchant; Arranging a mask layer (31) having an opening (311) on the dielectric layer (2); Creating a trench (13) in the dielectric layer (2) below the opening (311) by means of an anisotropic plasma etching process and using the mask layer (31) as an etching mask such that the trench (13) - intersects each of the different areas (21, 22, 23, 24, 25); and - extends into a section of the dielectric layer (2) in which the at least one dopant has in the vertical direction (v) both a gradient (c1') of at least 1 wt.% per µm and a gradient (dc(v) / dv) of less than or equal to -1 wt.% per µm; Widening the trench (13) by etching the trench (13) with the etching agent such that at least two of the different areas (21, 22, 23, 24, 25) are etched with different etching rates; Creating the conductor track (411) by filling an electrically conductive material into the widened trench (13).

The present invention relates to a method for calculating the propagation characteristics of Gaussian beams in anisotropic hypersonic plasma turbulence. Based on the power spectrum of the refractive index fluctuations of anisotropic plasma turbulence and the Rytov approximation theory, the long-term beam broadening and scintillation index of Gaussian beams in anisotropic plasma turbulence are solved. Two anisotropy factors are introduced to parameterize the anisotropic characteristics of the turbulence unit in the horizontal and vertical directions. The long-term beam broadening and scintillation index are simulated, and ultimately the propagation characteristic data of Gaussian beams in anisotropic hypersonic plasma turbulence are obtained. This method for calculating the propagation characteristics of Gaussian beams in anisotropic hypersonic plasma turbulence overcomes the shortcomings of the propagation characteristics of Gaussian beams in anisotropic hypersonic plasma turbulence, making the wave propagation problem in hypersonic plasma turbulence not only based on isotropy, but also providing a theoretical basis for subsequent electromagnetic wave propagation problems in plasma turbulence.