5 results about "Anisotropic plasma" patented technology

A method for processing a substrate, the method comprising: patterning a carbon-based hard mask layer on a dielectric layer to form a first recess in the carbon-based hard mask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height lower than the first height; depositing a metal-containing layer on the patterned carbon-based hard mask layer, the metal-containing layer being in physical contact with sidewalls of the patterned carbon-based hard mask layer in the first recess, the metal-containing layer being thicker at a first height than at a second height; and etching the dielectric layer by an anisotropic plasma etch process using the patterned carbon-based hard mask layer as an etch mask to form a second recess in the dielectric layer.

A method for processing a substrate that includes: patterning a carbon-based hardmask layer over a dielectric layer to form a first recess in the carbon-based hardmask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height that is lower than the first height; depositing a metal-containing layer over the patterned carbon-based hardmask layer, the metal-containing layer being physically in contact with sidewalls of the patterned carbon-based hardmask layer in the first recess, the metal-containing layer being thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hardmask layer as an etch mask by an anisotropic plasma etch process to form a second recess in the dielectric layer.

A method of processing a substrate with a vertical feature and a plurality of lateral features extending from the vertical feature is provided. The method includes exposing surfaces of the vertical feature and the plurality of lateral features to an anisotropic plasma generated from an inhibiting gas mixture to form an inhibition gradient on surfaces of the vertical feature and the plurality of lateral features, and depositing a gapfill structure in the vertical feature and lateral features. In an embodiment, the inhibition gradient provides for varying the growth rate of the gapfill structure in the vertical feature and the plurality of lateral features.

A method for processing a substrate, comprising: patterning a carbon-based hard mask layer on a dielectric layer to form a first recess in the carbon-based hard mask layer, wherein the first recess has a tapered profile such that the width of the first recess at a first height is greater than the width of the first recess at a second height lower than the first height; depositing a metal-containing layer on the patterned carbon-based hard mask layer, wherein the metal-containing layer is in physical contact with the sidewall of the patterned carbon-based hard mask layer in the first recess, and the metal-containing layer is thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hard mask layer as an etch mask by an anisotropic plasma etching process to form a second recess in the dielectric layer.

A method of processing a substrate with a vertical feature and a plurality of lateral features extending from the vertical feature is provided. The method includes exposing surfaces of the vertical feature and the plurality of lateral features to an anisotropic plasma generated from an inhibiting gas mixture to form an inhibition gradient on surfaces of the vertical feature and the plurality of lateral features, and depositing a gapfill structure in the vertical feature and lateral features. In an embodiment, the inhibition gradient provides for varying the growth rate of the gapfill structure in the vertical feature and the plurality of lateral features.