58 results about "Anisotropic plasma" patented technology

Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

The invention provides a dry etching preparation method of a T-shaped hole of an integrated circuit. The method comprises the following steps: (1) manufacturing of a micropore etching window, carrying out primary photoetching on an isolation medium layer for metal interconnection and manufacturing the micropore etching window; (2) primary etching, carrying out micropore primary etching by an anisotropic plasma dry etching process, wherein the micropore depth after primary etching is smaller than the thickness of the isolation medium layer; and the difference between the thickness of the isolation medium layer and the depth of a micropore after primary etching is equal to the thickness of a macropore of the T-shaped hole; (3) manufacturing of a macropore etching window, carrying out degumming by a plasma dry degumming technology to form a macropore etching window; (4) secondary etching, carrying out secondary etching by the etching technology same as that in the step (2), wherein the secondary etching time is shorter than the primary etching time; and (5) degumming, removing a photoresist by the plasma dry degumming technology. The preparation method is simple; and etching of the T-shaped hole can be finished only by one piece of etching equipment, so that the production cost is reduced.