8 results about "Fluorinated gases" patented technology

This invention relates to the field of industrial process management and optimization scheduling technology, and particularly to a method for tracking and optimizing carbon emission flows in a multi-product co-production process in the fluorochemical industry. First, a directed graph model of the product chain with process units as vertices is constructed. A multi-dimensional carbon emission flow calculation model is established, including direct carbon flows from fuel combustion, indirect carbon flows from purchased electricity and heat, direct carbon flows from the process itself, and carbon flows from the emission of fluorinated greenhouse gases. A dynamic evolution algorithm for node carbon potential and an iterative algorithm for reverse tracing of branch carbon flows are employed to achieve accurate tracking of spatiotemporally coupled carbon flows throughout the entire process. Using the time-varying carbon intensity coefficient as the core parameter, a dual-objective optimization scheduling model is established to minimize both total system carbon emissions and overall operating costs. An adaptive penalty mechanism with carbon constraints is introduced to solve for the optimal scheduling scheme, constructing a rolling optimization closed-loop control link for the production process. This invention effectively solves the problems of calculating carbon flows from the emission of fluorinated gases and allocating carbon flows among multiple products in the fluorochemical industry, achieving a synergistic improvement in carbon emission reduction and economic benefits.

The quartz wafer chemical polishing annealing method disclosed by the embodiment of the present application comprises the following steps: step 1, placing a quartz wafer to be polished in an annealing furnace, and heating to a first preset temperature under a vacuum environment or under an inert gas; step 2, continuing to heat to a second preset temperature, and filling fluorine-containing gas, and reacting for a first preset time, so that the fluorine-containing gas is pyrolyzed to generate fluorine radicals to perform chemical polishing on the surface of the quartz wafer; step 3, performing purging by using an inert gas, and removing SiF4 and residual fluoride generated in the reaction; and step 4, maintaining an inert gas atmosphere, keeping warm for a second preset time, and then cooling, to complete the chemical polishing annealing on the surface of the quartz wafer. The present application is a full dry process, and the quartz wafer is not contacted with any liquid from the wafer loading to the furnace discharge, so that mechanical damage and secondary pollution of the 3215 wafer are avoided, and surface purification can be completed at the same time of annealing.

A process for treating gases comprising fluorinated compounds is disclosed. The process comprises passing a dilute fluorinated compound gas stream comprising a fluorinated compound to a scrubber to scrub it of reactive gases. A scrubbed gas stream is discharged from the scrubber and fed to an adsorption unit to adsorb one or more fluorinated compounds onto an adsorbent. One or more fluorinated compounds are desorbed from the adsorbent. A concentrated gas stream comprising a higher concentration of the fluorinated compounds than the feed gas stream is discharged from the adsorption unit.

A process for treating gases comprising fluorinated compounds is disclosed. The process comprises passing a dilute fluorinated compound gas stream comprising a fluorinated compound to a scrubber to scrub it of reactive gases. A scrubbed gas stream is discharged from the scrubber and fed to an adsorption unit to adsorb one or more fluorinated compounds onto an adsorbent. One or more fluorinated compounds are desorbed from the adsorbent. A concentrated gas stream comprising a higher concentration of the fluorinated compounds than the feed gas stream is discharged from the adsorption unit.

In order to satisfactorily etch a SiOCN film, the present invention provides a method for etching a SiOCN film formed on a substrate, wherein the SiOCN film is etched through exposure to plasma generated from an etching gas containing an oxygen-containing gas, hydrogen gas, and a fluorine-containing gas that does not contain N.

The etching method disclosed in this application includes a step (a) in which a substrate is prepared in a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes a step (b) in which the silicon-containing film is etched by chemical species from the plasma formed from a process gas in the chamber. The process gas includes a phosphorus-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and hydrocarbons.

The application belongs to the technical field of functional polymer materials, and discloses a fluorinated microporous organic polymer with high specific surface area and a preparation method thereof. The fluorinated microporous organic polymer is prepared by a Friedel-Crafts reaction of a double-end or triple-end trifluoroacetyl-containing monomer and a phenyl-substituted benzene monomer in the presence of an acid catalyst; and the trifluoroacetyl-containing monomer is obtained by reacting a bromine-containing raw material with n-butyllithium and methyl trifluoroacetate at low temperature. The raw material and the catalyst used in the application are cheap and easy to obtain, the polymerization process is simple and safe, no noble metal catalyst is needed, and the post-treatment operation is simple. The fluorinated microporous organic polymer prepared has a large specific surface area, and can be widely applied in the fields of CO2 and volatile organic gas, especially fluorine-containing gas, capture, heterogeneous catalysis, heavy metal ion and toxic dye enrichment and recovery.

There is an etching method for etching a carbon-containing silicon oxide film formed on a substrate by exposing the carbon-containing silicon oxide film to plasma generated from an etching gas containing a fluorine-containing gas, an oxygen-containing gas, and a hydrogen gas.