This invention relates to the field of
semiconductor process chamber cleaning technology, specifically to a
semiconductor process chamber cleaning
gas composition based on HFO-1447fz, a
remote plasma cleaning method, and a closed-
loop control method. The main cleaning gas is HFO-1447fz (CAS134190-34-8), accounting for 30% to 70% of the total
molar fraction of the composition; the co-gas is selected from one or two of CF3I and C2F5I, accounting for 5% to 25% of the total
molar fraction of the composition; the auxiliary regulating gas is selected from one or more of He, Ne, and Kr, accounting for 15% to 55% of the total
molar fraction of the composition; the content of
fluorine-containing unsaturated
impurity compounds containing C=C or C≡C bonds in the cleaning
gas composition is ≤0.08 mol. This invention uses HFO-1447fz as the main cleaning gas, combined with CF3I, C2F5I synergistic gases and rare gases for auxiliary regulation, to form a highly efficient cleaning
system. The special molecular structure of HFO-1447fz can generate highly active
fluorine radicals after
plasma activation, which, together with the
catalytic effect of
iodine radicals, improves the removal rate of
silicon-based
dielectric deposits.