An apparatus for plating a conductive film directly on a substrate with a
barrier layer on top includes
anode rod (1) placed in tube (109), and
anode rings (2), and (3) placed between cylindrical walls (107) and (105), (103) and (101), respectively. Anodes (1), (2), and (3) are powered by power supplies (13), (12), and (11), respectively.
Electrolyte (34) is pumped by pump (33) to pass through filter (32) and reach inlets of liquid
mass flow controllers (LMFCs) (21), (22), and (23). Then LMFCs (21), (22) and (23) deliver
electrolyte at a set flow rate to sub-plating baths containing anodes (3), (2) and (1), respectively. After flowing through the gap between
wafer (31) and the top of the cylindrical walls (101), (103), (105), (107) and (109),
electrolyte flows back to tank (36) through spaces between cylindrical walls (100) and (101), (103) and (105), and (107) and (109), respectively. A pressure leak valve (38) is placed between the outlet of pump (33) and
electrolyte tank (36) to leak electrolyte back to tank (36) when LMFCs (21), (22), (23) are closed. A
wafer (31) held by
wafer chuck (29) is connected to power supplies (11), (12) and (13). A drive mechanism (30) is used to rotate wafer (31) around the z axis, and oscillate the wafer in the x, y, and z directions shown. Filter (32) filters particles larger than 0.1 or 0.2 mum in order to obtain a low particle added plating process.