The invention discloses a TSV
solid-phase hole filling
interconnection method and structure, and relates to the technical field of
semiconductor packaging. The TSV
solid-phase hole-filling
interconnection method comprises the steps of S1,
silicon through hole
etching and deposition, S2,
copper column
insertion and fixation, S3, surface treatment and
interconnection construction and S4,
electrical testing and process feedback, a complex
electroplating production line is abandoned, the through holes are filled through plastic deformation of the
solid copper columns, the inherent hole and seam problems of an
electroplating method are avoided, and the TSV solid-phase hole-filling interconnection method is suitable for large-scale production. The high-purity solid
copper columns are high in
mechanical strength and are tightly and mechanically interlocked with the inner walls of the through holes through plastic deformation, and the anti-fatigue capacity of the interconnection structure under the
thermal cycle load is improved by combining the insulating layer and the
barrier layer, so that reliable vertical interconnection is obtained,
thermal expansion coefficient mismatch of copper and
silicon is effectively avoided, and the reliability of the interconnection structure is improved. Stress is generated on the interface in the
electroplating process and the subsequent
thermal cycle.