3 results about "Borophosphosilicate glass" patented technology

The application provides a semiconductor structure, a preparation method and device of the semiconductor structure, relates to the technical field of semiconductors, and aims to solve the technical problem of high preparation cost of the semiconductor structure. The preparation method comprises the following steps: providing a substrate, wherein a groove is formed in the substrate; providing a silicon-oxygen polymer solution on the surface of the substrate, and forming a silicon-oxygen polymer layer by spin coating the silicon-oxygen polymer solution through a spin-on dielectric process, wherein the silicon-oxygen polymer solution contains a doping element, and the doping element comprises boron and phosphorus; and performing heat treatment on the silicon-oxygen polymer layer, wherein the temperature threshold of the heat treatment is 120-150 DEG C. The silicon-oxygen polymer layer is irradiated with ultrasonic waves for a preset time length, so as to form a porous silicon layer containing silicon hydroxide bonds; and an oxidizing gas is provided to the porous silicon layer, the oxidizing gas reacts with the silicon hydroxide bonds in the porous silicon layer, so as to form a borophosphosilicate glass film; and the borophosphosilicate glass film fills the groove. The application can reduce the preparation cost of the semiconductor structure.

Support (200) comprising: a support body (202); a bonding material (204) on a first main surface (208) of the support body (202), wherein the support (200) is configured to be attached to a semiconductor wafer via the bonding material (204) by wafer bonding, wherein the support body (202) contains one or more of silicon, boron phosphosilicate glass, borosilicate glass, phosphosilicate glass, boron nitride, polycrystalline silicon, silicon carbide; and dopants integrated in a first part (216) of the support (200) on the first main surface (208), wherein the dopants are configured to eject from the support (200) by thermal processing and are configured to form an n-type or p-type doping in the semiconductor wafer.

The invention relates to a preparation method of a semiconductor device. According to the method, the patterned oxide layer comprising the silicon dioxide layer and the boron phosphosilicate glass layer is subjected to reflux treatment, so that the corner at the position of the contact hole becomes smooth, the geometric obstacle of metal layer deposition is eliminated, and a foundation is laid for uniform deposition of the metal layer. Meanwhile, reverse sputtering and circular treatment of the primary metal layer are adopted, uniform deposition of the metal layer along the hole wall is promoted, the problem that holes and gaps exist in the metal layer due to the fact that the contact hole with the high aspect ratio is sealed in advance is effectively solved, and then the thickness uniformity of the metal layer is effectively improved.