Method and apparatus for deposition of boron-phosphorus silicate glass

Abstract

In a process of deposition of boron-phosphorus silicate glass film on a semiconductor wafer, a method and apparatus for controlling the adulteration thickness to reduce consumption of nitride on said semiconductor wafer. In an embodiment of the invention, at first, said method arranges substrate having nitride layer in a reaction chamber (502), and supplies silicon resource, oxide resource and boron resource, but delays the supply of phosphor resource to the reaction chamber, in order to form borosilicate glass layer (504) on said nitride layer. Then said method forms boron-phosphor-silicate film on the borosilicate glass film by supplying said silicon resource, oxide resource and boron resource to the reaction chamber.

Description

technical field [0001] This invention relates generally to the field of substrate processing for semiconductor manufacturing and, in particular, to controlling dopant concentrations during the deposition of borophosphosilicate glass (BPSG) films on semiconductor wafers in order to reduce nitrides on semiconductor wafers. An improved approach to layer consumption. Background technique [0002] Silicon oxide is widely used as an insulating layer in the manufacture of semiconductor devices. Boron- and phosphorus-doped silicate films, such as borophosphosilicate (BPSG) films, deposited from liquid sources such as tetraethylorthosilicate (TEOS), have been the preferred choice among silicon oxide films for many years. , due to their excellent gap-filling ability during glass reflow. [0003] Usually by oxygen-containing source and silicon-containing source, carry out reaction in the reactor of the heating of controlling atmospheric pressure or chamber, deposit BPSG film on silic...

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Problems solved by technology

Inconsistent doping concentrations, especially at interfaces with other materials, lead to inconsistent processing and result in defective devices

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