338 results about "Chemisorption" patented technology

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.

A method of forming a carbon nano-material layer may involve a cyclic deposition technique. In the method, a chemisorption layer or a chemical vapor deposition layer may be formed on a substrate. Impurities may be removed from the chemisorption layer or the chemical vapor deposition layer to form a carbon atoms layer on the substrate. More than one carbon atoms layer may be formed by repeating the method.

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

New low-cost CO₂ sorbents are provided that can be used in large-scale gas-solid processes. A new method is provided for making these sorbents that involves treating substrates with an amine and/or an ether so that the amine and/or ether comprise at least 50 wt. percent of the sorbent. The sorbent acts by capturing compounds contained in gaseous fluids via chemisorption and/or physisorption between the unit layers of the substrate's lattice where the polar amine liquids and solids and/or polar ether liquids and solids are located. The method eliminates the need for high surface area supports and polymeric materials for the preparation of CO₂ capture systems, and provides sorbents with absorption capabilities that are independent of the sorbents' surface areas. The sorbents can be regenerated by heating at temperatures in excess of 35° C.

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.

The present invention provides a system and method for selectively removing organic and inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.

The present invention teaches a novel approach of creating biocmpatible surfaces, said surfaces being capable of functionally interact with biological material. SAid biocompatible surfaces comrise at least two comonents, such as a hydrophobic substratum and a macromolecule of hydrophilic nature, which, in a cooperativity, form together the novel biocoompatible surfaces. The novel approach is ased on contacting said hydrophobic substratum with a laterally patterned monomolecular layer of said hydrophilic and flexible macromolecules, exhibiting a pronounced excluded volume. The htus formed two component surface is, in respect to polarity and morphology, a molecularly heterogeneous surface. Structural features of said macromolecular monolayer (as e.g. the layer thickness or its lateral density) are determined by: i) the structural features of the layer forming macromolecules (as e.g. their MW or their molecular architecture) and ii) the method of creating said monomolecular layer (as e.g. by physi- or chemisorbing, or by chemically binding said macromolecules). The structural features of the layer forming macromolecules(s) is in turn determined by synthesis. AMount and conformation and thus also biological activity of biological material (as e.g. polypeptides) which contact the novel biocompatible surface, is determined and maintained by the cooperative action of the underlying hydrophobic substratum and the macromolecular layer. In this way it becomes possible to maintain and control biological interactions between said contacted polypeptides and other biological compounds as e.g. cells, antibodies and the like. Consequently, the present invention aims to reduce and/or eliminate the deactivation and/or denaturation associated with the contacting of polypeptides and/or other biological material to a hydrophobic substratum surface.

A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

The present invention provides a system and method for selectively removing one or more organic and also preferably one or more inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, if desired, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

A process and composition for selectively adsorbing oxygen from a gaseous mixture. The chemisorption is carried out by a porous three-dimensional transition element complex comprised of intermolecularly bound TEC units, said units further comprised of at least one multidentate ligand forming at least one five- or six-membered chelate ring on each unit.

The invention provides a method for removing mercury from a liquid or gas hydrocarbon stream, mixtures thereof, including mixtures of liquid streams with a solid carbonaceous substance, by contacting the hydrocarbon stream with a composition comprising silver and a support material, wherein the composition as measured by ammonia chemisorption has a surface acidity in the range of 0.1-10.0 μmole of irreversible NH₃/g of the composition.

The invention discloses a nonionic aqueous polyurethane emulsion and a preparation method thereof, belonging to the technical field of high-molecular materials. The nonionic aqueous polyurethane emulsion comprises polyether polyol or polyester polyol, isocyanate, micromolecular chain extender, nonionic hydrophilic chain extender, hydrophilic chain extender, 0.6-1 weight portions of cross-linking agent, lower boiling point solvent, catalyst, amine neutralizer, amine chain extender, 0.4-2 weight portions of aqueous wetting agent, and aqueous levelling agent. The preparation method is characterized in that: prepolymerization, polymerization, emulsification, distillation, compounding are carried out to prepare the nonionic aqueous polyurethane emulsion, then the aqueous wetting agent and aqueous levelling agent are added with stirring to obtain an aqueous nonionic polyurethane glass fibre impregnating compound. The prepared nonionic aqueous polyurethane emulsion disclosed herein has the advantages of good stability, long stable phase, wide application scope, high strength, wear resistance, good elasticity, yellow stain resistance, aging resistance, solvent resistance, low temperature resistance, tortuosity resistance, good penetration, compatibility, good interface chemical combination or chemisorption and other excellent performances.

In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

The invention relates to a composite adsorbent. The composite adsorbent is used for removing acid gas NOx and/or SO2 in a gas mixture through adsorption and conversion. The composite adsorbent comprises a physical adsorbent and a chemical adsorbent, wherein the physical adsorbent is used for adsorption of acid gases as well as water molecules and oxygen contained in the gas mixture, the chemical adsorbent is used for carrying out a reaction for acid substances in the composite adsorbent, the weight ratio between the physical adsorbent and the chemical adsorbent is 0.1-5.0, and the porosity of the composite adsorbent is 0.2-0.85.

A positive resist mainly composed of a novolak resin and comprising a naphthoquinone diazido-based photosensitizer as an energy beam sensitive resin (e.g., a photosensitive resin) is applied in a thickness of 0.1 to 0.2 mum to a surface of a glass substrate 1 provided with transparent electrodes and dried so as to form a photosensitive film. Next, using a mask, the film is exposed to ultraviolet rays (365 nm). Then, moisture in the air reacts with the resist in an exposed portion 2', thereby generating -COOH groups, with which CH3(CH2)18SiCl3 is allowed to react so as to cause a dehydrochlorination reaction, thereby forming a monomolecular chemisorption film 6 comprising carbon chains 8. This film is used as an alignment film. Thus, the present invention provides a method for producing a uniform and thin alignment film for use in a liquid crystal display panel with a high efficiency without performing a rubbing treatment, and a method for producing a display panel using the same.