The application provides a device and method for dynamically adjusting an axial
temperature gradient in a
crystal growth process, and belongs to the technical field of
silicon carbide crystal production. The device comprises a
crucible main body, a
crucible cover provided with an opening, a
seed crystal rod, and a temperature adjusting device; one end of the
seed crystal rod is connected to a
seed crystal holder for carrying a seed
crystal, the seed crystal holder is placed in the
crucible main body during the growth process, and the other end is sleeved with the temperature adjusting device; the temperature adjusting device comprises an adjusting
assembly, a connecting
assembly, and a transmission
assembly; the adjusting assembly is made of
graphite soft felt and is provided with a through hole in the center, and the seed crystal rod passes through the through hole; the transmission assembly is connected to the adjusting assembly through the connecting assembly and controls the adjusting assembly to move up and down along the seed crystal rod to realize axial temperature regulation; the adjusting assembly is in a contracted state during the up and down movement, and is expanded through the transmission assembly when being in contact with the crucible cover or the seed crystal holder. The scheme realizes axial temperature regulation in the
crystal growth process.