68results about "Cell components" patented technology

The present invention provides a system and method for selectively removing organic and inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

An integrated treatment system using electrodialysis and pressure-driven membranes for deionizing and decontaminating liquids to a near-pure quality for use or reuse in industrial or municipal operations. The integrated system includes steps of pre-filtering contaminated feed liquids blending the filtered liquids in preparation for treating the mixed liquids in parallel or sequential treatment steps utilizing nanofiltration or reverse osmosis, proceeded by or followed by an integrated electrodialysis treatment. A control means selectively directs mixed liquids to each of the treatment units for treatment in parallel or in series depending on the conductivity and residual contaminants in the mixed liquids. In comparison with nanofiltration or reverse osmosis only systems, or electrodialysis only systems, the integrated system provides improved efficiencies for treatment, requires less energy to operate, and reduces maintenance and capital costs.

The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a second time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage. Electroplated articles including copper electroplated semiconductor wafers made using the apparatus and method of the invention are also provided.

The present invention provides a system and method for selectively removing one or more organic and also preferably one or more inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, if desired, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

The present invention provides an electroionic processing system having a high frequency alternating current (AC) power source for treating potable water, process water, wastewater, biosolids, sludge, primary effluent, secondary effluent, and other biochemical processing functions, including producing hydrogen peroxide and other useful chemicals. An electromagnetic field is generated and coupled to an electrolytic treatment apparatus by a direct coupling apparatus and method, a capacitive coupling apparatus and method, and an inductive coupling apparatus and method. The present invention further comprises a process controller and a plurality of analyzers for monitoring various treatment process variables to adjust and optimize the process as necessary.

The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

Methods and compositions for rendering proteins directly responsive to an external signal utilizing modulators that themselves respond to the external signal and are associated with the proteins. In response to the external signal, the modulator alters physical properties of the specific protein molecule(s) with which it is associated, thereby altering the structural and functional properties thereof. The modulator may, for example, transfer applied energy to a protein, or to a portion of the protein, thereby changing the protein structure and function.

Electrolytic plating of a workpiece is enhanced by providing a resistor between the workpiece and electrically conductive support member.

The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.

The invention relates to the field of lithium ion batteries, particularly a heat-conducting adhesive and a lithium ion battery containing the heat-conducting adhesive. The heat-conducting filler is added into the hot-melt adhesive system to prepare the heat-conducting adhesive. The heat-conducting adhesive has favorable heat-conducting property and adhesive property, and can be used for firmly bonding a protector and an electric core; and meanwhile, heat of the electric core is quickly transferred to the protector through the heat-conducting adhesive, so that the protector is quickly shut down, thereby improving the overcharging safety and protecting the electric core. The heat-conducting adhesive has high initial viscosity, so that the protector can keep good contact with the electric core by the aid of the high viscosity, thereby preventing the heat-conducting adhesive from departing from the electric core under the condition of inflation, deformation or the like of the electric core.

An electrochemical etching cell (1) is proposed for etching an etching body (15) made at least superficially of an etching material. The etching cell (1) has at least one chamber filled with an electrolyte, and is provided with a first electrode (13), which at least superficially has a first electrode material, and with a second electrode (13') which at least superficially has a second electrode material. Furthermore, the etching body (15) is in contact, at least region-wise, with the electrolyte. In this context, the first electrode material and the second electrode material are selected such that, after the etching, the etching body (15) is not contaminated and / or is not impaired in its properties by the electrode materials. In particular, the electrode materials are the same materials as the etching material. Also proposed is a method for etching an etching body (15) using this etching cell (1), the first and / or the second electrode (13, 13') being used as a sacrificial electrode. The proposed etching cell is particularly suitable for etching silicon wafers in a CMOS-compatible production line.

An electrochemical cell system comprises: a fuel cell module comprising a fuel cell outlet, an electrolysis module comprising an electrolysis water inlet in fluid communication with a water storage device and a hydrogen gas outlet in fluid communication with a hydrogen storage device, and a drainage system disposed downstream of the fuel cell hydrogen outlet and upstream of the water storage device and configured to remove water from the electrochemical cell system upon water within the water storage device attaining a selected level.

An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers (364 and 37) reduce the electrical current density near the edge of the substrate (20). By reducing the current density near the edge of the substrate (20), the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate (20). The system can also be modified so that the material that plates on electrical current density modifier portions (364) of structures (36) can be removed without having to disassemble any portion of the head (35) or otherwise remove the structures (36) from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

A chemically-nonreactive, electrically-nonconductive shield having a recess generally corresponding to the shape of an airfoil portion to be positioned therein. The shield is submerged in an electroplating solution in a plating tank. The recess in the shield is sized to provide a predetermined, closely-spaced apart clearance between walls of the recess and the adjacent airfoil portion sufficient to reduce the flow rate of an electrolyte present in the electroplating solution between walls of the recess and the adjacent airfoil portion. The clearance permits control of the amount of electroplating that is deposited on the portion of the airfoil that is positioned in the recess in relation to portions of the airfoil not positioned in the recess.

A semiconductive counter electrode covers a highly electronically conductive electric current buss. The semiconductive counter electrode is impervious to ion flow. A substrate holder is operable to hold a substrate and to form a thin fluid gap between the semiconductive counter electrode and a substrate surface. A thin liquid electrolyte layer is located in the thin fluid gap. A power supply connected to the electric current buss and a peripheral edge of a conductive substrate surface is able to generate a potential difference between the electric current buss and the semiconductive counter electrode, on one side of the electrolyte layer, and the substrate on the other side. The semiconductive counter electrode provides a substantial resistance in the various current flow paths between the electric current buss and the semiconductive counter electrode, on one side, and the conductive substrate surface, on the other, thereby enhancing control of current distribution.

A method is disclosed for treating a flushing solution from an ion exchanger used in electroplating operations by co-precipitating or selectively precipitating out metal hydroxides derived from metal ions from the structures being plated in the electroplating bath, metal ions from the electrodes use in the electroplating bath and metal ions from the plating metal used in the electroplating bath, and a pH raising agent having a cation with a valence of at least 2. After the metals are precipitated out of the flushing solution, the flushing solution is aerated with carbon dioxide to precipitate out the cation from the pH raising agent as a carbonate. The carbonate precipitate is removed from the flushing solution and the resulting solution consists essentially of water that may be recycled for use in the electroplating plant or safely discharged into the environment.

The flow of electrolyte and / or of ions is controlled by a diffuser element provided in a plating reactor, wherein, in one embodiment, the diffuser element comprises a mechanical adjustment mechanism to adjust the effective size of passages of the diffuser element. In another embodiment, the diffuser element comprises at least two patterns of passages that are movable relatively to each other so as to adjust an overlap and thus an effective size of the corresponding passages. Moreover, the path of ions within the plating reactor may be controlled by an electromagnetically driven diffuser element so that a required thickness profile on the workpiece surface may be obtained.

An apparatus and method for plating a workpiece. The apparatus comprises, generally, an anode, a cathode, and a selective anode shield / material flow assembly. In use, both the anode and the cathode are immersed in a solution, and the cathode is used to support the workpiece. During an electroplating process, the anode and the cathode generate an electric field emanating from the anode towards the cathode, to generate a corresponding current to deposit an electroplating material on the workpiece. The selective shield / material flow assembly is located between the anode and the cathode, and forms a multitude of adjustable openings. These opening have sizes that are adjustable during the electroplating process for selectively and controllably adjusting the amount of electric flux passing through the selective shield / material flow assembly and the distribution of the electroplating material on the workpiece. The selective shield / material flow assembly can also be used with an electroless plating system. At least one selective shield material flow mechanism is used in a selective shield material flow assembly.

A fuel-cell system, in particular for a vehicle, has a device for supplying the operating agents for a fuel cell and an electrical energy accumulator. The energy accumulator is composed of a battery and of an intermediate charge store which has a lower internal resistance than the battery. A switch is provided in the electrical connection between the energy accumulator and the fuel cell.

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction. The invention also concerns the method to conduct an electrochemical reaction on a surface of a corresponding semiconductor substrate.

An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

A chemically-nonreactive, electrically-nonconductive shield having a recess generally corresponding to the shape of an airfoil portion to be positioned therein. The shield is submerged in an electroplating solution in a plating tank. The recess in the shield is sized to provide a predetermined, closely-spaced apart clearance gap between walls of the recess and the adjacent airfoil portion sufficient to reduce the flow rate of an electrolyte present in the electroplating solution between walls of the recess and the adjacent airfoil portion. The clearance gap permits control of the amount of electroplating that is deposited on the airfoil portion that is positioned within the recess in relation to portions of the airfoil not positioned within the recess.