3754 results about "Capacitive coupling" patented technology

The present invention provides improved electrosurgical instruments and systems having electrocautery energy supply conductors that provide inhibited current leakage and methods of performing a robotically controlled minimally invasive surgical procedure while preventing unintended capacitive coupling. A surgical instrument generally comprises an elongate shaft having a proximal end and a distal end and defining an internal longitudinally extending passage. An electrocautery end effector is coupled to or disposed at the distal end of the shaft. An interface or tool base is coupled to or disposed at the proximal end of the shaft and removably connectable to the robotic surgical system. Typically, an independent electrical conductor extends from the interface to the end effector to transmit electrical energy to tissue engaged by the end effector. A sealed insulation tube extends within the passage and over the conductor. A separation is maintained between the sealed insulation tube and the conductor.

In some embodiments, a stylus for providing input to a capacitive touch screen, having a tip including or consisting of conductive felt, which provides a deformable conductive surface for contacting the touch screen. The tip is produced by felting base fibers (which are typically non-conductive) with conductive fibers. In other embodiments, a capacitive touch stylus having at least a first mode of operation and a second mode of operation, and including at least one conductive tip and switched circuitry (preferably, passive circuitry) including at least one switch biased in a default state indicative of the first mode of operation but switchable into a second state indicative of the second mode of operation in response to movement of the tip (typically, in response to exertion of not less than a threshold force on the tip). In some embodiments, a stylus having a conductive tip (e.g., a conductive, felted tip) and including switched circuitry (preferably, passive circuitry) having a first state which couples a capacitance to the tip, where the capacitance is sufficient to allow a capacitive touch screen device to recognize (as a touch) simple contact of the tip on the screen of the touch screen device, and a second state which decouples the capacitance from the tip, thereby preventing the touch screen device from recognizing (as a touch) simple contact of the tip on the screen.

The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying interlevel contacts/vias. The second or upper dielectric layer is formed over the etch stop and patterned to define the intralevel interconnects. The entire dual damascene structure is then etched in a single selective etch process which first etches the patterned interconnects, then etches the contact/vias past the patterned etch stop. The etch stop has a low dielectric constant relative to a conventional SiN etch stop, which minimizes the capacitive coupling between adjacent interconnect lines. The dual damascene structure is then filled with a suitable conductive material such as aluminum or copper and planarized using chemical mechanical polishing.

Multi-gate NOR flash thin-film transistor (TFT) string arrays are organized as three dimensional stacks of active strips. Each active strip includes a shared source sublayer and a shared drain sublayer that is connected to substrate circuits. Data storage in the active strip is provided by charge-storage elements between the active strip and a multiplicity of control gates provided by adjacent local word-lines. The parasitic capacitance of each active strip is used to eliminate hard-wire ground connection to the shared source making it a semi-floating, or virtual source. Pre-charge voltages temporarily supplied from the substrate through a single port per active strip provide the appropriate voltages on the source and drain required during read, program, program-inhibit and erase operations. TFTs on multiple active strips can be pre-charged separately and then read, programmed or erased together in a massively parallel operation.

A non-volatile memory device and a method of manufacturing the non-volatile memory device are provided. At least one first semiconductor layer and at least one second semiconductor layer are disposed. At least one control gate electrode is disposed between the at least one first semiconductor layer and the at least one second semiconductor layer. At least one first layer selection line is capacitively coupled to the at least one first semiconductor layer. At least one second layer selection line is capacitively coupled to the at least one second semiconductor layer.

A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

A semiconductor memory device having MIS transistors to constitute memory cells (MC), each of the MIS transistors including a semiconductor layer (12), a source region (15) formed in the semiconductor layer, a drain region (14) formed apart from the source region in the semiconductor layer, the semiconductor layer between the source region and the drain region serving as a channel body in a floating state, a main gate (13) provided between the source region and the drain region to form a channel in the channel body; and an auxiliary gate (20) provided separately from the main gate to control a potential of the channel body by capacitive coupling, the auxiliary gate being driven in synchronization with the main gate. The MIS transistor has a first data state in which the channel body is set at a first potential and a second data state in which the channel body is set at a second potential.

A radio frequency (RF) coaxial resonator feeding a saltshaker-like gas distributing electrode assembly forms a capacitively coupled plasma source. This apparatus can generate plasma of high density over a wide pressure range and large process window. The system may be used as a remote radical-rich plasma source for materials surface processing.

A touch screen system includes a capacitive touch screen (1) including a plurality of row conductors (7-1,2 . . . n) and a column conductor (5-1). A plurality of cotemporaneous orthogonal excitation signals (S₁(t), S₂(t) . . . S_n(t)) are simultaneously driven onto the row conductors, respectively. The capacitively coupled signals on the column conductor may be influenced by a touch (10) on the capacitive touch screen. Receiver circuitry (50) includes a sense amplifier (21-1) coupled to generate an amplifier output signal (r₁(t)) in response to signals capacitively coupled onto the column conductor. WHT-based circuitry (35) determines amounts of signal contribution capacitively coupled by each of the excitation signals, respectively, to the amplifier output signal.

An RFID device, such as an RFID tag or label, includes a combined reactive coupler electrically coupling a transponder chip to an antenna. The combined reactive coupler includes a magnetic coupler and a capacitive coupler. The magnetic coupler and the reactive coupler may have respective coupling elements on both the interposer and on an antenna substrate.

An implantable electronic medical device is compatible with a magnetic resonance imaging (MRI) scanner. The device has a housing with exterior walls, each formed by a dielectric substrate with electrically conductive layers on interior and exterior surfaces. A series of slots divide each layer into segments. Segmenting the layers provides high impedance to eddy currents produced by fields of the MRI scanner, while capacitive coupling of the segments provides radio frequency shielding for components inside the housing. Electrical leads extending from the housing have a pair of coaxially arranged conductors and traps that attenuate currents induced in the conductors by the fields of the MRI scanner.

A capacitive position sensor has a two-layer electrode structure. Drive electrodes extending in a first direction on a first plane on one side of a substrate. Sense electrodes extend in a second direction on a second plane on the other side of the substrate so that the sense electrodes cross the drive electrodes at a plurality of intersections which collectively form a position sensing array. The sense electrodes are provided with branches extending in the first direction part of the way towards each adjacent sense electrode so that end portions of the branches of adjacent sense electrodes co-extend with each other in the first direction separated by a distance sufficiently small that capacitive coupling to the drive electrode adjacent to the co-extending portion is reduced. Providing sense electrode branches allow a sensor to be made which has a greater extent in the first direction for a given number of sense channels, since the co-extending portions provide an interpolating effect. The number of sense electrode branches per drive electrode can be increased which allows a sensor to be made which has ever greater extent in the first direction without having to increase the number of sense channels.

A liquid crystal display device according to the present invention is constituted of a TFT substrate and an opposing substrate which are arranged so as to be opposite to each other with a liquid crystal layer interposed therebetween. In addition, in the liquid crystal layer, formed is a polymer into which a polymer component added to liquid crystal is polymerized, and which determines directions in which liquid crystal molecules tilt when voltage is applied. In the TFT substrate, formed are a sub picture element electrode directly connected to a TFT and a sub picture element electrode connected to the TFT through capacitive coupling. In each of these sub picture element electrodes, formed are slits extending in directions respectively at angles of 45 degrees, 135 degrees, 225 degrees and 315 degrees to the X axis.