The invention relates to the technical field of
plasma sources, in particular to a self-shielding
inductively coupled plasma radio frequency electrode and
plasma processing equipment. The device at least comprises a spiral
inductance coil, a middle shielding
electrode and a grounding
capacitor, wherein the spiral
inductance coil is used for transmitting
radio frequency energy to a
plasma excitation area in an
inductive coupling mode; the middle shielding
electrode is connected to the middle coil part of the spiral
inductance coil and used for shielding high-
voltage areas at the upper end and the lower end of the spiral inductance coil; the grounding
capacitor is used for adjusting the
voltage in the middle of the spiral inductance coil, so that the
voltage amplitude of the position where the middle shielding electrode is located is reduced to the lowest point, and the self-
shielding effect is achieved. According to the invention, the
electric field of a high-voltage area of the coil is effectively shielded, the
capacitive coupling effect is obviously reduced, the problems of particle
pollution, shortened equipment life,
ion damage and the like of a traditional plasma source in a
wafer processing process are solved, and the
system stability and the process reliability are improved.