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2392results about "Analogue computers for electric apparatus" patented technology

Robust adaptive model predictive controller with tuning to compensate for model mismatch

An MPC adaptation and tuning technique integrates feedback control performance better than methods commonly used today in MPC type controllers, resulting in an MPC adaptation/tuning technique that performs better than traditional MPC techniques in the presence of process model mismatch. The MPC controller performance is enhanced by adding a controller adaptation/tuning unit to an MPC controller, which adaptation/tuning unit implements an optimization routine to determine the best or most optimal set of controller design and/or tuning parameters to use within the MPC controller during on-line process control in the presence of a specific amount of model mismatch or a range of model mismatch. The adaptation/tuning unit determines one or more MPC controller tuning and design parameters, including for example, an MPC form, penalty factors for either or both of an MPC controller and an observer and a controller model for use in the MPC controller, based on a previously determined process model and either a known or an expected process model mismatch or process model mismatch range. A closed loop adaptation cycle may be implemented by performing an autocorrelation analysis on the prediction error or the control error to determine when significant process model mismatch exists or to determine an increase or a decrease in process model mismatch over time.
Owner:FISHER-ROSEMOUNT SYST INC

Visual inspection and verification system

A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask. The method may also include providing a second simulated image which is a simulation of the wafer print of the portion of the design mask which corresponds to the portion represented by the defect area image. The method also provides for the comparison of the first and second simulated images in order to determine the printability of any identified potential defects on the photolithography mask. A method of determining the process window effect of any identified potential defects is also provided for.
Owner:SYNOPSYS INC
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